• 한국세라믹학회지
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• 제43권12호
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• pp.812-822
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• 2006

This study amis to investigate the functional analysis of anode and cathode materials in Anode supported Solid Oxide Fuel Cell. The concentration polarization of single cell was investigated with CFD (Computational Fluid Dynamics) method for the case of the different morphology by using four types of unit cell and discussed to reduce the concentration polarization. The concentration polarization at anode side effected the voltage loss in Anode supported Solid Oxide Fuel Cell and increased contact areas between fuel gas and anode side could reduce the concentration polarization. For intermediate temperature operation, Anode-supported single cells with thin electrolyte layer of YSZ (Yttria-Stabilized Zirconia) were fabricated and short stacks were built and evaluated. We also developed diesel and methane autothermal reforming (ATR) reactors in order to provide fuels to SOFC stacks. Influences of the $H_2O/C$ (steam to carbon ratio), $O_2/C$ (oxygen to carbon ratio) and GHSV (Gas Hourly Space Velocity) on performances of stacks have been investigated. Performance of the stack operated with a diesel reformer was lower than with using hydrogen as a fuel due to lower Nernst voltage and carbon formation at anode side. The stack operated with a natural gas reformer showed similar performances as with using hydrogen. Effects of various reformer parameters such as $H_2O/C$ and $O_2/C$ were carefully investigated. It is found that $O_2/C$ is a sensitive parameter to control stack performance.

• Korean Chemical Engineering Research
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• 제57권4호
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• pp.525-530
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• 2019

고체산화물 연료전지의 성능과 안정성은 전극의 기공률, 기공 분포와 전해질의 치밀도, 두께에 따라 결정 된다. 연료극의 기공률과 기공 분포는 활성면적와 연료 흐름에 영향을 주고, 전해질의 치밀한 미세구조와 두께는 단위전지의 Ohmic 저항에 영향을 준다. 하지만 이를 위해 값 비싼 공정 장비를 이용하거나 여러 단계의 제작 공정이 추가 될 경우 단위전지 제작비가 증가하므로 상업화를 목표로 하는 연구에는 적합하지 않다. 본 연구에서는 위와 같은 문제점들을 해결하기 위하여 상용 소재 기반의 NiO-YSZ 연료극을 선정 후 간단한 혼합 방법 및 일축가압 성형법과 담금코팅(dip coating) 공정을 사용하여 저비용 고효율의 세라믹 공정 기반의 고성능 단위전지를 제작하였다. 연료극의 기공률은 기공형성제로서 사용되는 카본 블랙(CB, carbon black)의 첨가량(10~20 wt%)과 최종 소결온도($1350{\sim}1450^{\circ}C$)를 변경하며 제어하였고, YSZ 전해질의 두께와 미세구조는 담금코팅 슬러리의 고상 분말량(YSZ, 1~5 vol%)을 제어하여 치밀한 박막의 전해질을 구현하고자 하였다. 그 결과 Ni-YSZ 연료극에서 최적의 값으로 잘 알려진 40%의 기공률은 카본 블랙을 15 wt% 첨가하고최종소결온도를 $1350^{\circ}C$로설정함으로써얻을수있었다. 담금코팅을통한 YSZ 두께는 $2{\sim}28{\mu}m$까지 제어가 가능하였고, 3 vol%의 고상분말량에서 치밀한 전해질 미세구조가 형성되었다. 최종적으로 40%의 기공률을 갖는 Ni-YSZ 연료극, $20{\mu}m$ 두께의 치밀한 YSZ전해질, LSM-YSZ 공기극으로 구성된 단위전지는 $800^{\circ}C$에서 $1.426Wcm^{-2}$의 우수한 성능을 얻을 수 있었다.

• 공업화학
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• 제30권4호
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• pp.493-498
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• 2019

수소연료전지의 백금 촉매층은 높은 활성을 가지고 있어야 하며, 물과 산소의 원활한 물질전달을 위하여 얇은 두께를 유지해야 한다. 이를 위해 수열 합성 기반의 높은 백금 함량의 담지 촉매 합성법이 보고되어 왔지만, 반응과정에서의 입자 성장 거동 및 속도에 대한 접근은 상대적으로 희박하다. 본 연구에서는 환원과정이 완료된 현탁액을 교반하면서 백금 결정의 성장을 시간별로 관찰하였고 이의 전기화학적 활성을 평가하였다. 초반 교반과정 단계의 단지 수 시간에서 백금 콜로이드가 탄소 담지 백금 촉매에 붙어 백금 결정을 성장시키는 것을 확인하였다. 그 이후에는 새로운 핵성장 반응으로 크기가 작은 콜로이드가 형성되지만, 백금 결정 성장에는 참여하지 않는 것을 확인하였다. 따라서 6 h만 교반과정을 겪은 탄소 담지 백금 촉매도 산소환원반응에 대해 우수한 성능을 가지고 있음을 확인하였다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2000년도 추계학술발표회 초록집
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• pp.3-4
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• 2000

Many researchers are interested in the synthesis and characterization of carbon nitride and diamond-like carbon (DLq because they show excellent mechanical properties such as low friction and high wear resistance and excellent electrical properties such as controllable electical resistivity and good field electron emission. We have deposited amorphous carbon nitride (a-C:N) thin films and DLC thin films by shielded arc ion plating (SAIP) and evaluated the structural and tribological properties. The application of appropriate negative bias on substrates is effective to increase the film hardness and wear resistance. This paper reports on the deposition and tribological OLC films in relation to the substrate bias voltage (Vs). films are compared with those of the OLC films. A high purity sintered graphite target was mounted on a cathode as a carbon source. Nitrogen or argon was introduced into a deposition chamber through each mass flow controller. After the initiation of an arc plasma at 60 A and 1 Pa, the target surface was heated and evaporated by the plasma. Carbon atoms and clusters evaporated from the target were ionized partially and reacted with activated nitrogen species, and a carbon nitride film was deposited onto a Si (100) substrate when we used nitrogen as a reactant gas. The surface of the growing film also reacted with activated nitrogen species. Carbon macropartic1es (0.1 -100 maicro-m) evaporated from the target at the same time were not ionized and did not react fully with nitrogen species. These macroparticles interfered with the formation of the carbon nitride film. Therefore we set a shielding plate made of stainless steel between the target and the substrate to trap the macropartic1es. This shielding method is very effective to prepare smooth a-CN films. We, therefore, call this method "shielded arc ion plating (SAIP)". For the deposition of DLC films we used argon instead of nitrogen. Films of about 150 nm in thickness were deposited onto Si substrates. Their structures, chemical compositions and chemical bonding states were analyzed by using X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and infrared spectroscopy. Hardness of the films was measured with a nanointender interfaced with an atomic force microscope (AFM). A Berkovich-type diamond tip whose radius was less than 100 nm was used for the measurement. A force-displacement curve of each film was measured at a peak load force of 250 maicro-N. Load, hold and unload times for each indentation were 2.5, 0 and 2.5 s, respectively. Hardness of each film was determined from five force-displacement curves. Wear resistance of the films was analyzed as follows. First, each film surface was scanned with the diamond tip at a constant load force of 20 maicro-N. The tip scanning was repeated 30 times in a 1 urn-square region with 512 lines at a scanning rate of 2 um/ s. After this tip-scanning, the film surface was observed in the AFM mode at a constant force of 5 maicro-N with the same Berkovich-type tip. The hardness of a-CN films was less dependent on Vs. The hardness of the film deposited at Vs=O V in a nitrogen plasma was about 10 GPa and almost similar to that of Si. It slightly increased to 12 - 15 GPa when a bias voltage of -100 - -500 V was applied to the substrate with showing its maximum at Vs=-300 V. The film deposited at Vs=O V was least wear resistant which was consistent with its lowest hardness. The biased films became more wear resistant. Particularly the film deposited at Vs=-300 V showed remarkable wear resistance. Its wear depth was too shallow to be measured with AFM. On the other hand, the DLC film, deposited at Vs=-l00 V in an argon plasma, whose hardness was 35 GPa was obviously worn under the same wear test conditions. The a-C:N films show higher wear resistance than DLC films and are useful for wear resistant coatings on various mechanical and electronic parts.nic parts.