• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.110.1-110.1
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• 2012

Recently, advances in ZnO based oxide semiconductor materials have accelerated the development of thin-film transistors (TFTs), which are the building blocks for active matrix flat-panel displays including liquid crystal displays (LCD) and organic light-emitting diodes (OLED). However, the electrical performances of oxide semiconductors are significantly affected by interactions with the ambient atmosphere. Jeong et al. reported that the channel of the IGZO-TFT is very sensitive to water vapor adsorption. Thus, water vapor passivation layers are necessary for long-term current stability in the operation of the oxide-based TFTs. In the present work, $Al_2O_3$ and $TiO_2$ thin films were deposited on poly ether sulfon (PES) and $SnO_x$-based TFTs by electron cyclotron resonance atomic layer deposition (ECR-ALD). And enhancing the WVTR (water vapor transmission rate) characteristics, barrier layer structure was modified to $Al_2O_3/TiO_2$ layered structure. For example, $Al_2O_3$, $TiO_2$ single layer, $Al_2O_3/TiO_2$ double layer and $Al_2O_3/TiO_2/Al_2O_3/TiO_2$ multilayer were studied for enhancement of water vapor barrier properties. After thin film water vapor barrier deposited on PES substrate and $SnO_x$-based TFT, thin film permeation characteristics were three orders of magnitude smaller than that without water vapor barrier layer of PES substrate, stability of $SnO_x$-based TFT devices were significantly improved. Therefore, the results indicate that $Al_2O_3/TiO_2$ water vapor barrier layers are highly proper for use as a passivation layer in $SnO_x$-based TFT devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.211.1-211.1
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• 2013

We fabricate the conductive zinc oxide(ZnO) thin film using UV-enhanced atomic layer deposition. ZnO is semiconductor with a wide band gap(3.37eV) and transparent in the visible region. ZnO can be deposited with various method, such as metal organic chemical vapour deposition, magnetron sputtering and pulsed laser ablation deposition. In this experiment, ZnO thin films was deposited by atomic layer deposition using diethylzinc (DEZ) and D.I water as precursors with UV irradiation during water dosing. As a function of UV exposure time, the resistivity of ZnO thin films decreased dramatically. We were able to confirm that UV irradiation is one of the effective way to improve conductivity of ZnO thin film. The resistivity was investigated by 4 point probe. Additionally, we confirm the thin film composition is ZnO by X-ray photoelectron spectroscopy. We anticipate that this UV-enhanced ZnO thin film can be applied to electronics or photonic devices as transparent electrode.

• Proceedings of the Korea Water Resources Association Conference
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• 2005.09b
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• pp.902-903
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• 2005

• Journal of the Korean Wood Science and Technology
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• v.21 no.2
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• pp.67-72
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• 1993

Hot water extractives of sawdust/particle from domestic and foreign wood species, which were composed of pitch pine, Korean pine, larch, Italy poplar, acacia and oak as Korean wood species, Malaysian oil palm and German spruce were quantitatively analyzed with thin layer chromatography. Sugar components of saccharose, galactose, glucose, fructose and arabinose were contained in these wood species. It was assumed that arabinose and glucose are major inhibitory components against cement hardening in larch and oil palm, respectively, since both species contain a large amount of each sugar. In contrast, fructose might not influence so badly on a cement hardening, when considering that fructose was contained much in Italy poplar with a good cement hardening character. Galactose was a minor component.

• Proceedings of the SAREK Conference
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• 2009.06a
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• pp.1326-1331
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• 2009

Drying process in the cylindrical thin film layer of sludge with the thickness less than a few millimeters has been investigated. Thin film drying is specially designed and used to dry the viscous materials like sewage sludge. The thin film layer of sludge is dried on the metallic cylindrical surface through which thermal energy is supplied to the layer during drying. The wall temperature is assumed to be constant during drying in the present study for the simplification. In order to solve the equations, the mass transfer rate on the drying surface should be determined. The mass flux of evaporated water vapor on the surface is estimated with the formulation given in the literature. The effect of some physical parameters on drying has been examined to figure out the drying characteristics of the sludge layer.

• Proceedings of the SAREK Conference
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• 2008.06a
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• pp.1128-1133
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• 2008

Drying process in the thin film layer of sludge with the thickness less than a few millimeters has been investigated using the simple one-dimensional model. Thin film drying is usually used to dry the viscous materials like sewage sludge. The thin film layer of sludge is dried on the metallic surface through which thermal energy is supplied to the layer during drying. In order to solve the equations, the mass transfer rate on the drying surface should be determined. The mass flux of evaporated water vapor on the surface is estimated with the formulation given in the literature. The effect of heating temperature, film thickness, and air velocity on drying has been examined to figure out the drying characteristics of the sludge layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.4
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• pp.432-438
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• 2004

In this study, we investigated the WVTRs Properties of inorganic thin composite films(ITCFs) to be newly adopted as the passivation layer of the OLED to replace the inorganic compound material Because we thought that inorganic compound materials were limited to enhance the barrier property of thin film. So, ITCFs were fabricated by mixing the cooperated material with the base material. And then, ITCFs were deposited onto the plastic substrate using the electron beam evaporation system and the water vapor transmission rates(WVTRs) were measured using the Mocon equipment. As a result of the WVTR measurement, we could analyze the WVTR values for various ITCFs. ITCFs had a remarkably lower value than the inorganic compound film. Through the analysis of thin film, we can understand the crystal structure and mixed amount. Therefore, ITCFs can be used as the inorganic passivation layers of OLED with the inorganic compound film.

• Journal of the Korean Electrochemical Society
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• v.5 no.4
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• pp.216-220
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• 2002

The effects of electrolytes on electrochemical behavior from an oil thin layer interposed between a graphite electrode and an aqueous solution phase were examined. A hydrophobic electroactive species, tetrachloro-1,4-benzoquinone (TCQ), in a benzonitrile (EN) layer was employed to study ion transfer properties across the BN-water interface. Experimental results showed that hydrophobic cations as well as anions could be successfully used as ionic charge carriers. The addition of various salts into either the oil layers or the aqueous solutions offers deeper insight for the electrochemistry of the liquid thin layer system. When aqueous perchloric acid is interfaced with the BN films, the perchlorate ion of tetrahexylammonium perchlorate (THAP) substantially suppresses the dissociated proton concentration in the layer by the common ion effect while there is only a little change in the total acid concentration. Further approach by theoretical calculation makes it possible to quantitatively understand the effect of the electrolytes to the electrochemical responses of TCQ, which were previously reported (Anal. Chem. 73, 337 (2001)).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.4
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• pp.168-172
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• 2010

Superhydrophilic thin film consisted of positively charged poly (allylamine hydrochloride) (PAH) and negatively charged poly (acrylic acid) (PAA) was fabricated by a layer-by-layer (LBL) self-assembly. Glutaraldehyde (GA) was used in order to increase an adhesion hardness by amine-aldehyde reaction. The surface morphology, thickness, transmittance, water contact angle and adhesion hardness of PAH/PAA thin film with or without GA were measured. The adhesion hardness of PAH/PAA thin film with GA deposition increased over 2 times although the film thickness of PAH/GA/PAA decreased than that of PAH/PAA thin film. The increase of adhesion hardness by amine-aldehyde reaction between PAH and GA was measured by fourier transform infrared (FT-IR) spectroscopy. Fabricated PAH/PAA and PAH/GA/PAA thin films showed water contact angel under $5^{\circ}$ and high transmittance over 91.3% at 550 nm.

• Journal of the Semiconductor & Display Technology
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• v.20 no.3
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• pp.22-26
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• 2021

Thin-film encapsulation (TFE) technology is most effective in preventing water vapor and oxygen permeation in the organic light emitting diodes (OLED). Of those, a laminated structure of Al₂O₃ and MgO were applied to provide efficient barrier performance for increasing the stability of devices in air. Atomic layer deposition (ALD) method is known as the most promising technology for making the laminated Al₂O₃/MgO and is used to realize a thin film encapsulation technology in organic light-emitting diodes. Atomic layer deposited inorganic films have superior barrier performance and have advantages of excellent uniformity over large scales at relatively low deposition temperatures. In this study, the control system of the MgCP₂ precursor for the atomic layer deposition of MgO was established in order to deposit the MgO layer stably by the injection time of second level and the stable heating temperature. The deposition rate was obtained stably to be from 4 to 10 Å/cycle using the injection pulse times ranging from 3 to 12 sec and a substrate temperature ranging from 80 to 150 ℃.