• 헤리티지:역사와 과학
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• 제54권3호
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• pp.4-23
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• 2021

본고는 시대를 관통하는 기형의 보편성을 가진 족집게의 쓰임과 사용 문화를 알아보고, 족집게의 유형을 살펴보고자 하였다. II장에서는 족집게에 관한 용어를 정리하고, 족집게의 쓰임을 당대의 사회문화, 정치와 관련하여 두 가지 경우로 보았다. 첫 번째는 미용 및 자기관리의 목적으로 족집게를 사용한 경우이다. 눈썹과 코털을 정리하는 미용 용도로 사용하였고, 남성들이 사회적 지위와 권력을 유지하고자 흰털을 뽑는 용도로 사용되었다. 두 번째는 응급 처지 의료보조기구로 족집게를 사용한 경우이다. III장에서는 고려, 조선시대 족집게를 유형별로 분류하였다. 족집게는 크게 기본형과 복합형으로 구분된다. 기본형은 삼국시대부터 현재까지 이어져온 형태로 손잡이와 집게로 이루어져 있다. 집게를 고정하는 고리가 달린 족집게 형태가 나타나기도 한다. 복합형은 일체형과 분리형으로 나뉜다. 일체형은 양쪽에 달린 도구에 기반을 둔 분류이며, 귀이개 일체형과 손칼 일체형이 있다. 반면 분리형은 리벳 분리형과 고리 분리형으로 나뉜다. 특히 주목할 점은 복합형 중 일체형은 고려시대에만 나타나는 기형으로 당대 사용자들의 기호를 엿볼 수 있다. 제작 기법은 단조로 얇은 금속판을 만든 후에 족집게의 형태를 만든다. 장식 기법은 은과 동 같은 무른 금속 재질의 족집게에 선각, 점조, 압각(인각) 등으로 문양을 새겼고, 장식성이 두드러지는 족집게는 왕실이나 귀족들이 사용했을 것으로 추정된다. 그러나 시대에 상관없이 대부분의 족집게는 강도가 높은 청동이나 철로 제작되었다. 때문에 다수의 족집게는 단순한 X자 문양이 시문되거나 무문이 주를 이루고 있다. 족집게의 형태들이 다양하게 나타날 수 있던 이유는 시대를 막론하고 족집게 문화가 널리 퍼져 있었기 때문이다. 기본형 족집게는 삼국시대부터 현재까지 이어져오고 있으며 실용성에 기반을 둔 전형적인 일상도구이다. 그동안 금속공예는 왕실공예 또는 불교공예에 한정되어 연구되어왔다. 족집게와 같은 일상용구에 대한 연구가 활발히 이루어져 당대의 사회문화를 여러 방면으로 살펴볼 수 있는 계기가 되기를 바란다.

• Journal of the Korean Wood Science and Technology
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• 제16권4호
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• pp.10-39
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• 1988

This study investigated the temperatures and relative humidities in the semi-greenhouse type solar dryer with a black rock-bed heat storage and without heat storage and outdoor temperature and relative humidity at 9 a.m. and 2 p.m.. A comparison was made of the drying rates, final moisture contents, moisture content distributions, casehardening stresses, drying defects, volumetric shrinkage of dried lumber for solar- and air-drying from the green condition of mixtures of Douglas-fir, lauan, taun, oak and sycamore 25mm- and 50 mm-thick lumber during the same period for four seasons, and heat efficiencies for solar dryer with and without the heat storage for saving of heat energy and the cost of lumber drying using the solar energy. The results from this study were summarized as follows: I. The mean weekly temperatures in the solar dryers were 3 to $6^{\circ}C$ at 9 a.m. and 9 to $13^{\circ}C$ at 2 p.m. higher than mean outdoor temperature during all the drying period. 2. The mean weekly relative humidities in the solar dryers were about 1 to 19% at 9 a.m. higher than the outdoor relative humidity. and the difference between indoor and outdoor relative humidity in the morning was greater than in the afternoon. 3. The temperatures and relative humidities in the solar dryer with and without the heat storage were nearly same. 4. The overall solar insolation during the spring months was highest and then was greater in the order of summer, atumm, and winter month. S. The initial rate of solar drying was more rapid than that of air drying. As moisture content decreased, solar drying rate became more rapid than that of air drying. The rates of solar drying with and without heat storage were nearly same. The drying rate of Douglas-fir was fastest and then faster in the order of sycamore, lauan, taun and oak. and the faster drying rate of species, the smaller differences of drying rates between thicknesses of lumber. The drying rates were fastest in the summer and slowest in the winter. The rates of solar drying during the spring were more slowly in the early stage and faster in the later stage than those during the autumn. 6. The final moisture contents were above 15% for 25mm-thick air dried and about 10% for solar dried lumber, but the mean final MCs for 50mm-thick lumber were much higher than those of thin lumber. The differences of final MC between upper and lower course of pile for solar drying were greater than those of pile for air drying. The differences of moisture content between the shell and the core of air dried lumbers were greater than those of solar dried lumber, smallest in the drying during summer and greatest in the drying during winter among seasons. 7. Casehardening stresses of 25mm- and 50mm-thick dried lumber were slight, casehardening stress of solar dried lumber was severer than that of air dried lumber and was similar between solar dried lumber with and without heat storage, Casehardening stresses of lumber dried during spring were slightest and then slighter in the order of summer, autumn, and winter. Casehardening stresses of Douglas -fir, sycamore and lauan were slight, comparing with those of taun and oak. 8. Maximum initial checks of 25mm-thick lumber occurred above and below fiber saturation point and those of 50mm-thick lumber occurred in the higher moisture content than thin lumber. As the moisture content decreased, most of checks were closed and didn't show distinct difference of the degree of checks among drying methods. The degree of checks were very slight in case of Douglas-fir and lauan, and severe in case of taun and oak. The degree of checks for 50mm-thick lumber were severer than those for 25mm-thick lumber. 9. The degree of warpage showed severe in case of oak and sycamore lumber, but no warping was found in case of Douglas-fir, lauan and taun. 10. The volumetric shrinkages of taun and oak were large and medium in case of Douglas-fir, lauan and sycamore. 11. Heat efficiencies of solar dryer with heat storage were 6.9% during spring, 7.7% during summer, 12.1% during autumn and 4.1% during winter season. Heat efficiency of solar dryer with heat storage was slightly greater than that of without heat storage. As moisture content of lumber decreased, heat efficiency decreased.

• Applied Microscopy
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• 제32권2호
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• pp.91-105
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• 2002

포유동물의 콩팥에서 오줌 농축기전에 중요한 요소(urea)의 이동에 관여하는 요소운반체 (urea transporter, UT)에는 요세관에서 발현되는 요소운반체인 UT-A와 적혈구에서 발현되는 요소운반체인 UT-B가 있다. 최근 UT-A에는 UT-A1, UT-A2, UT-A3, UT-A4, UT-A5 등 5종류가 있음이 밝혀졌다. 이 연구에서는 콩팥내 요세관 세포에서 UT-A1, UT-A2 및 UT-A4를 표지하는 것으로 알려진 UT-A (L403)의 분포를 밝히고자 하였다. Sprague-Dawley계 흰쥐($200{\sim}250g$)의 콩팥을 대상으로 정상군, 탈수군(식수를 3일간 공급하지 않은 군) 및 수분과잉공급군(3%의 sucrose를 섞은 식수를 3일간 자유롭게 먹였다)의 3군으로 나누었다. 콩팥은 복대동맥을 통하여 2% paraformaldehyde-lysine-periodate (PLP) 또는 8% paraformaldehyde용액으로 10분간 관류 고정하였다. 콩팥조직절편은 UT-A에 대한 토끼 다클론항체를 이용하여 포매전면역염색법을 이용한 과산화효소법과 면역도금법을 시행한 후 광학 및 전자현미경으로 관찰하여 다음과 같은 결과를 얻었다. 흰쥐 콩팥에서 UT-A1은 속수질집합관의 세포질에 산재하여 분포하고 있었으며, UT-A2는 짧은-헨레고리의 내림가는부분 말단 1/2 부분의 상피세포(I형 세포)와 속수질 초기부분에 있는 긴-헨레고리의 내림가는부분 상피세포(II형 세포)의 세포막에 분포하고 있었다. 속수질집합관내 UT-A1은 탈수군에서는 감소하였으며, 수분과잉공급군에서는 증가하였다. 짧은-헨레고리의 내림가는부분에 있는 UT-A2는 탈수군과 수분과잉공급군 모두에서 증가하되 수분과잉공급군에서 더 증가하였다. 긴-헨레고리의 내림가는부분 중 속수질 초기부분에서 발현되는 UT-A2의 면역반응성은 탈수군에서 현저히 증가하였으나, 수분과잉공급군에서는 정상군에서처럼 약하게 발현되었다. 이상의 연구 결과로 보아 흰쥐 콩팥에서 UT-A1은 속수질집합관의 세포질에 UT-A2는 짧은-헨레고리와 긴-헨레고리의 내림가는부분 상피세포의 세포막에 분포하고 있으며 서로 다른 기전에 의하여 조절되고 있는 것으로 생각된다.

• 태양에너지
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• 제20권2호
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• pp.43-54
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• 2000

동시 진공증발법을 이용하여 coming glass, soda-lime glass, Mo가 증착된 soda-lime glass 위에 $Cu(In_{1-x}Ga_x)Se_2$ 박막을 증착하였다. Soda-lime glass 위에서 제조된 $Cu(In_{0.5}Ga_{0.5})Se_2$ 박막의 전기비저항값과 정공농도는Cu/(In+Ga)비에 큰 영향을 받지 않았다. Soda-lime glass위에서의 $Cu(In_{1-x}Ga_x)Se_2$ 박막내부와 표면에는 Na이 검출되었고, 표면의 Na는 산소와 결합하고 있었으며, Cu가 부족한 조성에서 이차상이 형성되었다. Ga/(In+Ga)비가 증가할수록 $Cu(In_{1-x}Ga_x)Se_2$ 박막은 회절 peak들의 큰 회절각으로 이동, 초격자 peak등의 분리, 결정립 크기의 감소가 관찰되었다. $Cu_{0.91}(In_{1-x}Ga_x)Se_2$ 박막은 Ga/(In+Ga)비에 무관하게 전기적으로 p-type을 나타내었다. Ag/n-ZnO /i-Zno/CdS/$Cu_{0.91}(In_{0.7}Ga_{0.3})Se_2$/Mo/glass구조의 태양전지를 제조하였으며, 태양전지변환효율(Eff.) = 14.48%, 단락전류밀도(Jsc) = $34.88mA/cm^2$, 개방전압(Voc) =581.5 mV, 충실도(F.F) = 0.714을 나타내었다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2000년도 추계학술발표회 초록집
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• pp.3-4
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• 2000

Many researchers are interested in the synthesis and characterization of carbon nitride and diamond-like carbon (DLq because they show excellent mechanical properties such as low friction and high wear resistance and excellent electrical properties such as controllable electical resistivity and good field electron emission. We have deposited amorphous carbon nitride (a-C:N) thin films and DLC thin films by shielded arc ion plating (SAIP) and evaluated the structural and tribological properties. The application of appropriate negative bias on substrates is effective to increase the film hardness and wear resistance. This paper reports on the deposition and tribological OLC films in relation to the substrate bias voltage (Vs). films are compared with those of the OLC films. A high purity sintered graphite target was mounted on a cathode as a carbon source. Nitrogen or argon was introduced into a deposition chamber through each mass flow controller. After the initiation of an arc plasma at 60 A and 1 Pa, the target surface was heated and evaporated by the plasma. Carbon atoms and clusters evaporated from the target were ionized partially and reacted with activated nitrogen species, and a carbon nitride film was deposited onto a Si (100) substrate when we used nitrogen as a reactant gas. The surface of the growing film also reacted with activated nitrogen species. Carbon macropartic1es (0.1 -100 maicro-m) evaporated from the target at the same time were not ionized and did not react fully with nitrogen species. These macroparticles interfered with the formation of the carbon nitride film. Therefore we set a shielding plate made of stainless steel between the target and the substrate to trap the macropartic1es. This shielding method is very effective to prepare smooth a-CN films. We, therefore, call this method "shielded arc ion plating (SAIP)". For the deposition of DLC films we used argon instead of nitrogen. Films of about 150 nm in thickness were deposited onto Si substrates. Their structures, chemical compositions and chemical bonding states were analyzed by using X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and infrared spectroscopy. Hardness of the films was measured with a nanointender interfaced with an atomic force microscope (AFM). A Berkovich-type diamond tip whose radius was less than 100 nm was used for the measurement. A force-displacement curve of each film was measured at a peak load force of 250 maicro-N. Load, hold and unload times for each indentation were 2.5, 0 and 2.5 s, respectively. Hardness of each film was determined from five force-displacement curves. Wear resistance of the films was analyzed as follows. First, each film surface was scanned with the diamond tip at a constant load force of 20 maicro-N. The tip scanning was repeated 30 times in a 1 urn-square region with 512 lines at a scanning rate of 2 um/ s. After this tip-scanning, the film surface was observed in the AFM mode at a constant force of 5 maicro-N with the same Berkovich-type tip. The hardness of a-CN films was less dependent on Vs. The hardness of the film deposited at Vs=O V in a nitrogen plasma was about 10 GPa and almost similar to that of Si. It slightly increased to 12 - 15 GPa when a bias voltage of -100 - -500 V was applied to the substrate with showing its maximum at Vs=-300 V. The film deposited at Vs=O V was least wear resistant which was consistent with its lowest hardness. The biased films became more wear resistant. Particularly the film deposited at Vs=-300 V showed remarkable wear resistance. Its wear depth was too shallow to be measured with AFM. On the other hand, the DLC film, deposited at Vs=-l00 V in an argon plasma, whose hardness was 35 GPa was obviously worn under the same wear test conditions. The a-C:N films show higher wear resistance than DLC films and are useful for wear resistant coatings on various mechanical and electronic parts.nic parts.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.278-278
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• 2009

A photovoltaic device consisting of arrays of radial p-n junction wires enables a decoupling of the requirements for light absorption and carrier extraction into orthogonal spatial directions. Each individual p-n junction wire in the cell is long in the direction of incident light, allowing for effective light absorption, but thin in orthogonal direction, allowing for effective carrier collection. To fabricate radial p-n junction solar cells, p or n-type vertical Si wire cores need to be produced. The majority of Si wires are produced by the vapor-liquid-solid (VLS) method. But contamination of the Si wires by metallic impurities such as Au, which is used for metal catalyst in the VLS technique, results in reduction of conversion efficiency of solar cells. To overcome impurity issue, top-down methods like noble metal catalytic etching is an excellent candidate. We used noble metal catalytic etching methods to make Si wire arrays. The used noble metal is two; Au and Pt. The method is noble metal deposition on photolithographycally defined Si surface by sputtering and then etching in various BOE and $H_2O_2$ solutions. The Si substrates were p-type ($10{\sim}20ohm{\cdot}cm$). The areas that noble metal was not deposited due to photo resist covering were not etched in noble metal catalytic etching. The Si wires of several tens of ${\mu}m$ in height were formed in uncovered areas by photo resist. The side surface of Si wires was very rough. When the distance of Si wires is longer than diameter of that Si nanowires are formed between Si wires. Theses Si nanowires can be removed by immersing the specimen in KOH solution. The optimum noble metal thickness exists for Si wires fabrication. The thicker or the thinner noble metal than the optimum thickness could not show well defined Si wire arrays. The solution composition observed in the highest etching rate was BOE(16.3ml)/$H_2O_2$(0.44M) in Au assisted chemical etching method. The morphology difference was compared between Au and Pt metal assisted chemical etching. The efficiencies of radial p-n junction solar Cells made of the Si wire arrays were also measured.

• 한국정보통신학회논문지
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• 제22권2호
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• pp.347-353
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• 2018

논문에서는 도파관의 얇은 횡단면에 변형된 H-형 아이리스를 배치하여 대역 통과 여파기(bandpass filter; BPF)를 구현하는 방법에 대해 연구하였다. 제안된 소형 공진 아이리스(resonant iris; RI)는 전형적인 H-형 RI 중앙의 수평방향 일자형 간극을 U형으로 변형하여 간극의 등가 커패시턴스를 증가시키고 아이리스의 양측 수직방향 일자형 슬롯들을 C형으로 변형하여 등가 인덕턴스를 증가시킨 구조이다. 제안된 RI와 전형적인 H형 RI의 주파수에 따른 특성을 비교하여 소형화에 유리하고 차단특성이 우수함을 관찰하였다. 제안된 아이리스 구조의 등가 인덕턴스, 등가 커패시턴스, Q 값(quality factor) 등을 추출하여 특성을 분석하였다. 제안된 아이리스 구조를 이용하여 9.5 GHz 대역(9.18-9.84 GHz, 삽입손실 0.3 dB, 반사손실 14 dB)에서 동작하는 3차 BPF를 설계하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.406-406
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• 2016

To get high efficiency n-type crystalline silicon solar cells, passivation is one of the key factor. Tunnel oxide (SiO2) reduce surface recombination as a passivation layer and it does not constrict the majority carrier flow. In this work, the passivation quality enhanced by different chemical solution such as HNO3, H2SO4:H2O2 and DI-water to make thin tunnel oxide layer on n-type crystalline silicon wafer and changes of characteristics by subsequent annealing process and firing process after phosphorus doped amorphous silicon (a-Si:H) deposition. The tunneling of carrier through oxide layer is checked through I-V measurement when the voltage is from -1 V to 1 V and interface state density also be calculated about $1{\times}1012cm-2eV-1$ using MIS (Metal-Insulator-Semiconductor) structure . Tunnel oxide produced by 68 wt% HNO3 for 5 min on $100^{\circ}C$, H2SO4:H2O2 for 5 min on $100^{\circ}C$ and DI-water for 60 min on $95^{\circ}C$. The oxide layer is measured thickness about 1.4~2.2 nm by spectral ellipsometry (SE) and properties as passivation layer by QSSPC (Quasi-Steady-state Photo Conductance). Tunnel oxide layer is capped with phosphorus doped amorphous silicon on both sides and additional annealing process improve lifetime from $3.25{\mu}s$ to $397{\mu}s$ and implied Voc from 544 mV to 690 mV after P-doped a-Si deposition, respectively. It will be expected that amorphous silicon is changed to poly silicon phase. Furthermore, lifetime and implied Voc were recovered by forming gas annealing (FGA) after firing process from $192{\mu}s$ to $786{\mu}s$. It is shown that the tunnel oxide layer is thermally stable.

• 한국결정성장학회지
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• 제21권3호
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• pp.110-113
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• 2011

본 논문에서는 금속촉매를 이용하여 육각형 GaN 피라미드의 꼭지점 부분에만 마이크로 크기의 GaN 구조를 선택적으로 성장시킬 수 있는 결정 성장 방법에 대하여 연구하였다. GaN Template 위에 $SiO_2$ 막을 증착하고 3 ${\mu}m$의 원형 패턴을 형성하여 metal organic vapor phase epitaxy (MOVPE) 방법으로 선택적 결정 성장에 의해 GaN 피라미드를 성장한 후, photolithography 공정을 이용하여 피라미드 꼭지점 부분에만 Au화 Cr을 각각 증착하였다. GaN 피라미드 구조의 꼭지점 부근에만 금속이 증착된 시료를 MOVPE 반응관에 장착하고 10분 동안 GaN 마이크로 구조를 성장하였다. 성장 온도는 650, 700, $750^{\circ}C$로 변화를 주어 특성 변화를 알아보았다. 막대 형상의 마이크로 GaN 구조들은 {1-101} 결정면들을 구성하는 6개의 결정면에 대해 각각 수직한 방향으로 성장되었으며 이들 구조들의 형성조건과 모양은 성장온도와 금속의 종류에 의해 영향을 받는 것을 확인할 수 있었다.

• 한국진공학회지
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• 제15권1호
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• pp.103-109
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• 2006

전자빔원으로 탄소나노튜브에 기초를 두고 있는 고휘도 마이크로빔 X선원용 타첫이 설계되었다. X-선원은 다음과 같은 제원을 따른다. $1\times10^{11} phs/s.mm^2.mrad^2$. 고휘도, 5 mm의 빔의 크기, $20\~40keV$ 평균 X-선 에너지. 제원을 만족시키기 위해서 구성, 물질, 타겟의 두께와 필요한 빔전류와 같은 타켓의 설계 변수들은 MCNPX code를 통해서 최적화되었다. 설계 변수들은 투과형 타겟 구조를 위해 X-선원의 스펙트럼과 세기의 분포의 계산으로부터 결정되었다 진공압력과 국소화된 열의 누적을 견디기 위한 투과형 타겟 구조를 위해서 구조적인 안정성과 온도 분포도 또한 고려되었다. 타겟 물질은 몰리보덴으로 선택되었고 최적화된 두께는 2mm로서 150mm 두께의 베릴륨이 붙여져 있다 부가적으로 투과형 타겟의 최대 온도가 안정적인 작동의 한계 내에서 유지될 수 있다는 것을 계산을 통하여 알게 되었다.