• Proceedings of the KIEE Conference
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• 2002.07b
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• pp.808-810
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• 2002

Higher current-rating and improved thermal performance are being sought for existing medium-voltage vacuum circuit breakers(VCB) in order to meet market needs which require to be compact and downsized. In this paper, thermal performance of medium voltage vacuum circuit breaker was investigated through experiments and numerical analysis. We changed several major parameters of current-rating and heat sink affecting on thermal behaviors in the breaker and observed the results. To predict the temperature distribution in complex three-dimensional (3-D) VCB components and gas, the commercial package was used to simulate conjugate heat transfer. Although some assumptions and simplifications were introduced to simulate the model, results from the computational model were in good agreement with actual temperature rise measurements obtained from experiments.

• Journal of the Korean Vacuum Society
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• v.8 no.2
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• pp.116-120
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• 1999

Fe-Ni alloy thin films with about 3.5 $\mu\textrm{m}$ thickness were successfully grown on Al-killed steel substrates employing DC magnetron sputtering method, and then the4 film properties were characterized. The deposited film exhibited a fibre texture structure with the relationship of ${110}_\textrm{film}//{111}_\textrm{substrate}$. We found that the adhesion between the film and the substrate was fairly good considering no debonding behavior after the thermal cyclic test of 5,000 times from room temperature to $200^{\circ}C$. Also we found that the Fe-Ni alloy deposition induced a significant decrease of thermal expansion in the film processing, a new material system with much lower thermal expansion coefficient which can be applied more as shadow mask materials than an Al-killed steel sheet.

• Vacuum Magazine
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• v.4 no.3
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• pp.16-20
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• 2017

Graphene has emerged as a promising material for optoelectronic applications including as ultrafast and broadband photodetector, optical modulator, and nonlinear photonic devices. Graphene based devices have shown the feasibility of ultrafast signal processing for required for photonic integrated circuits. However, on-chip monolithic nanoscale light source has remained challenges. Graphene's high current density, thermal stability, low heat capacity and non-equilibrium of electron and lattice temperature properties suggest that graphene as promising thermal light source. Early efforts showed infrared thermal radiation from substrate supported graphene device, with temperature limited due to significant cooling to substrate. The recent demonstration of bright visible light emission from suspended graphene achieve temperature up to ~3000 K and increase efficiency by reducing the heat dissipation and electron scattering. The world's thinnest graphene light source provides a promising path for on-chip light source for optical communication and next-generation display module.

• Journal of the Korean Vacuum Society
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• v.6 no.S1
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• pp.59-65
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• 1997

Efficient Si(100) etching by thermal H atoms at low substrate temperatures has been achieved. Gas-phase etching product $SiH_4$(g) upon H atom bombardment resulting from direct abstraction of $SiH_3$(a) by impinging H atoms was detected with a quadrupole mass spectrometer over the substrate temperature range of 105-408 K Facile depletion of all surface silyl ($SiH_3$) groups the dissociative adsorption product of disilane ($Si_2H_6$) at 105K from Si(100)2$\times$1 by D atoms and continuous regeneration and removal of $SiD_3$(a) were all consumed. These results provide direct evidence for efficient silicon surface etching by thermal hydrogen bombardment at cryogenic temperatures as low as 105K We attribute the high etching efficiency to the formation and stability of $SiH_3$(a) on Si(100) at lowered surface temperatures allowing the $SiH_3$(a) abstraction reaction by additional H atom to produce $SiH_4$((g).

• Proceedings of the Korean Society For Composite Materials Conference
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• 2004.10a
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• pp.39-42
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• 2004

Carbon nanofiber/Cu composite powder has been fabricated by electroless plating process. Microstructural evolution of the composite powder after heat treatment under vacuum, hydrogen and air environment was investigated. A dispersed carbon nanofiber coated by copper was produced at the as-plated condition. Carbon nanofiber is coated uniformly and densely with the plate shaped copper particles. The copper plates on the carbon nanofiber aggregate during the thermal exposure at elevated temperature in vacuum and hydrogen in order to reduce surface energy. The thermal exposure of the composite powder in air at $400^{\circ}C$ for 3 hours leads to the spherodization of the composite powder owing to oxidation of copper.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.168-175
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• 1992

The surface and interface morphology as well as the sheet resistance, and uniformity of TiSiz film are significantly improved and the lateral titanium silicide growth over the oxide spacer is minimized by the use of ion beam mixing and rapid thermal annealing in nitrogen ambient. In addition, TiSiz film formations on TiISi and TiISiOz system were also studied.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.369-369
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• 2011

In the current work, we demonstrate the gas phase plasma synthesis of ultrafine boron nanoparticles by decomposing boron trichloride (BCl3) gas in an argon-hydrogen thermal plasma and quenching the hot plasma by expansion through a ceramic nozzle, driving the homogeneous nucleation of nanoparticles. It is shown that ultrafine nanoparticles can be produced from the experiments. We also show the characterization results regarding the oxidation of boron nanoparticles at room temperature using X-ray Photoelectron Spectroscopy (XPS) and the combined Scanning Transmission Electron Microscope (STEM) and Electron Energy Loss Spectroscopy (EELS).

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.459-459
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• 2011

Graphene has many fascinating material properties such as high electron mobility, high optical transparency, excellent thermal conductivity, superior Young's modulus, etc. Several studies have recently found that single-layer graphene is chemically more reactive than few-layer graphene when supported on silicon dioxide substrates with sub-nm roughness. In this study, we have investigated the influence of substrates on chemical reactivity of graphene. Morphology and thermal oxidation behavior of graphene on atomically flat mica substrates were studied by atomic force microscopy (AFM) and Raman spectroscopy compared to graphene on SiO2/Si substrates. Notably, oxidation of single-layer graphene proceeds more slowly on mica than SiO2/Si. Detailed analysis led to a conclusion that deformation along the out-of-plane direction enhances reactivity of graphene.

• Bulletin of the Korean Space Science Society
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• 2004.10b
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• pp.368-371
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• 2004

ETRI has developed the EQM (Engineering Qualification model) payload system for the communications and broadcasting satellite (CBS) with Korean local companies. This paper describes a series of environmental tests such as vibration, thermal/thermal vacuum, and EMC tests. All the development processes including the design, implementation, integration and workmanship were verified and evaluated by these tests. The results of the functional tests and the compliance to the requirements are also presented. The technologies and heritage obtained from this development will be applied to the development of the payload system for the Korean communication satellite in the near future.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.3
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• pp.182-186
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• 2005

In this work, thermal evaporation system was employed to deposit thin films of SiC on glass substrates in order to determine the parameters of them. Measurements included transmission, absorption, Seebak effect, resistivity and conductivity, absorption coefficient, type of energy band-gap, extinction coefficient as functions of photon energy and the effect of increasing film thickness on transmittance. Results explained that SiC thin film is an n-type semiconductor of indirect energy band-gap of ${\sim}3eV$, cut-off wavelength of 448nm, absorption coefficient of $3.4395{\times}10^{4}cm^{-1}$ and extinction coefficient of 0.154. The experimental measured values are in good agreement with the typical values of SiC thin films prepared by other advanced deposition techniques.