• 한국전기전자재료학회논문지
• /
• 제18권6호
• /
• pp.499-505
• /
• 2005

We compared the effects of a representative aromatic acid amplifier, 2-hydroxy-2'-tosylory biphenyl, doped in poly(tort-butyl methacrylate) (PTBMA), poly (tetrahydropyranylmethacrylate) (pTHPMh) or poly[tert-butoxycarbonyloxystyrene) (pTBOCST) resin film as acid labile polymer in view of thermal stability and photosensitivity enhancement. The acid amplifier was stable up to 60 min in pTBMA and pTBOCST film and up to 10 min in pTHPMA film at $120^{\circ}C$. pTBMA and pTHPMA film doped with the acid amplifier showed 9 times and 3 times higher photosensitivity, respectively. But pTBOCST film showed a negligible photosensitivity enhancement. Photosensitivity enhancement and thermal stability of the acid amplifier were found to be affected by the resin.

• 한국분무공학회지
• /
• 제21권2호
• /
• pp.111-115
• /
• 2016

This paper experimentally reports the effect of suspension stability on the thermal conductivity of water-based Au nanofluids. For this purpose, the water-based Au nanofluids are prepared by the one-step method called electro-chemical method with volume fraction of 0.0005%. The thermal conductivity of water-based Au nanofluids is measured from $22^{\circ}C$ to $42^{\circ}C$ using the transient hot wire method. To quantify the suspension stability of Au nanofluids, the suspension stability of nanofluids is evaluated using the in-house developed laser scattering system at a fixed wavelength of 632.8nm with the elapsed time. Based on the experimental results, the both thermal conductivity and suspension stability of water-based Au nanofluids are gradually decreased according to the time. These results experimentally show that the suspension stability of water-based Au nanofluids is the one of the important factor of thermal conductivity.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2001년도 춘계학술발표회 초록집
• /
• pp.3-3
• /
• 2001

Recently TiN, TiAlN, CrN hardcoatings have adapted many industrial application such as die, mold and cutting tools because of good wear resistant and thermal stability. However, in terms of high speed process, general hard coatings have been limited by oxidation and thermal hardness drop. Especially in the case of PCB drill, high speed cutting and without lubricant process condition have not adapted these coatings until now. Therefore more recently, superhard nanocomposite coating which have superhard and good thermal stability have developed. In previous works, WC-TiAlN new nanocomposite film was investigated by cathodic arc ion plating system. Control of AI concentration, WC-TiAlN multi layer composite coating with controlled microstructure was carried out and provides additional enhancement of mechanical properties as well as oxidation resistance at elevated temperature. It is noted that microhardness ofWC-TiA1N multi layer composite coating increased up to 50 Gpa and got thermal stability about $900^{\circ}C$. In this study WC-TiAlN nanocomposite coating was deposited on PCB drill for enhancement of life time. The parameter was A1 concentration and plasma cleaning time for edge sharpness maintaining. The characteristic of WC-TiAlN film formation and wear behaviors are discussed with data from AlES, XRD, EDS and SEM analysis. Through field test, enhancement of life time for PCB drill was measured.

• 한국전산유체공학회:학술대회논문집
• /
• 한국전산유체공학회 2008년도 춘계학술대회논문집
• /
• pp.474-478
• /
• 2008

It has been shown that a nanofluid consisting of nanoparticles dispersed in base fluid has much higher effective thermal conductivity than pure fluid. In this study, four kinds of nanofluids such as multiwalled carbon nanotube (MWCNT) in water, CuO in water, SiO2in water, and CuO in ethylene glycol, are produced. Their thermal conductivities are measured by a transient hot-wire method. The thermal conductivity of water-based MWCNT nanofluid is shown to be increased by up to 11.3% at a volume fraction of 0.01. The measured thermal conductivities of MWCNT nanofluids are higher than those calculated with Hamilton-Crosser's model due to neglecting solid-liquid interaction at the interface. The results show that the thermal conductivity enhancement of nanofluids depends on the thermal conductivities of both particles and the base fluid. Stability of nanofluids is estimated by UV-vis spectrum analysis. Stability of nanofluid depends on the type of base fluid and the suspended particles. Also it can be improved in addition of a surfactant.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.376-376
• /
• 2012

Semiconductor nanowires (NWs) are future building block for nano-scale devices. Especially, Ge NWs are fascinated material due to the high electrical conductivity with high carrier mobility. It is strong candidate material for post-CMOS technology. However, thermal stability of Ge NWs are poor than conventional semiconductor material such as Si. Especially, when it reduced size as small as nano-scale it will be melted around CMOS process temperature due to the melting point depression. Recently, Graphene have been intensively interested since it has high carrier mobility with single atomic thickness. In addition, it is chemically very stable due to the $sp^2$ hybridization. Graphene films shows good protecting layer for oxidation resistance and corrosion resistance of metal surface using its chemical properties. Recently, we successfully demonstrated CVD growth of monolayer graphene using Ge catalyst. Using our growth method, we synthesized Ge/graphene core/shell (Ge@G) NW and conducted it for highly thermal stability required devices. We confirm the existence of graphene shell and morphology of NWs using SEM, TEM and Raman spectra. SEM and TEM images clearly show very thin graphene shell. We annealed NWs in vacuum at high temperature. Our results indicated that surface melting phenomena of Ge NWs due to the high surface energy from curvature of NWs start around $550^{\circ}C$ which is $270^{\circ}C$ lower than bulk melting point. When we increases annealing temperature, tip of Ge NWs start to make sphere shape in order to reduce its surface energy. On the contrary, Ge@G NWs prevent surface melting of Ge NWs and no Ge spheres generated. Furthermore, we fabricated filed emission devices using pure Ge NWs and Ge@G NWs. Compare with pure Ge NWs, graphene protected Ge NWs show enhancement of reliability. This growth approach serves a thermal stability enhancement of semiconductor NWs.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2010년도 제39회 하계학술대회 초록집
• /
• pp.157-157
• /
• 2010

Vertical-structure light-emitting diodes (V-LEDs) by laser lift-off (LLO) have been exploited for high-efficiency GaN-based LEDs of solid-state lightings. In V-LEDs, emitted light from active regions is reflected-up from reflective ohmic contacts on p-GaN. Therefore, silver (Ag) is very suitable for reflective contacts due to its high reflectance (>95%) and surface plasmon coupling to visible light emissions. In addition, low contact resistivity has been obtained from Ag-based ohmic contacts annealed in oxygen ambient. However, annealing in oxygen ambient causes Ag to be oxidized and/or agglomerated, leading to degradation in both electrical and optical properties. Therefore, preventing Ag from oxidation and/or agglomeration is a key aspect for high-performance V-LEDs. In this work, we demonstrate the enhanced thermal stability of Ag-based Ohmic contact to p-GaN by reducing the thermal compressive stress. The thermal compressive stress due to the large difference in CTE between GaN ($5.6{\times}10^{-6}/^{\circ}C$) and Ag ($18.9{\times}10^{-6}/^{\circ}C$) accelerate the diffusion of Ag atoms, leading to Ag agglomeration. Therefore, by increasing the additional residual tensile stress in Ag film, the thermal compressive stress could be reduced, resulting in the enhancement of Ag agglomeration resistance. We employ the thin Ni layer in Ag film to form Ni/Ag mutli-layer structure, because the lattice constant of NiO ($4.176\;{\AA}$ is larger than that of Ag ($4.086\;{\AA}$). High-resolution symmetric and asymmetric X-ray diffraction was used to measure the in-plane strain of Ag films. Due to the expansion of lattice constant by oxidation of Ni into NiO layer, Ag layer in Ni/Ag multi-layer structure was tensilely strained after annealing. Based on experimental results, it could be concluded that the reduction of thermal compressive stress by additional tensile stress in Ag film plays a critical role to enhance the thermal stability of Ag-based Ohmic contact to p-GaN.

• 한국생물공학회:학술대회논문집
• /
• 한국생물공학회 2002년도 생물공학의 동향 (X)
• /
• pp.73-74
• /
• 2002

• 한국산학기술학회논문지
• /
• 제8권5호
• /
• pp.1042-1046
• /
• 2007

본 연구에서는 제 3의 화학 원소 첨가에 의한 코발트 실리사이드와 니켈 실리사이드의 열적 안정성 향상 메카니즘을 조사하였다. 즉, Co-Si 시스템에 텅스텐을 첨가하는 경우 CoSi의 heat of formation이 증가하는 것으로 관찰되었다. 이러한 증가는 시스템 에너지 감속 속도의 최대화로 대변되는 실리사이드 형성 kinetics가 선호하는 glass의 형성을 억제하는 것으로 밝혀졌다. 이 경우 CoSi와 실리콘 기판 사이의 계면에 형성되는 다결정 구조는 glass의 self-diffusion보다 확산계수가 훨씬 작아 상 변이를 위해서는 보다 높은 열에너지를 요구하게 되어 궁극적으로 CoSi의 열적 안정성이 향상되는 것을 알 수 있었다.

• 공업화학
• /
• 제16권2호
• /
• pp.262-266
• /
• 2005

대표적인 지방족 산증식제인 4-hydroxy-4'-p-tosyloxy isopropylidene dicyclohexane을 산에 민감한 고분자인 poly[tert-butyl methacrylate] (pTBMA), poly[tetrahydropyranylmethacrylate] (pTHPMA) 및 poly[tert-butoxycarbonyloxystyrene] (pTBOCST) 수지에 첨가하여 열적 안정성과 감도 증진의 관점에서 산증식제의 효과를 비교하였다. 산증식제는 pTBMA 또는 pTBOCST 필름에서는 $120^{\circ}C$에서 20 min까지 안정하였으며, pTHPMA 필름에서는 5 min까지 안정하였다. 산증식제를 첨가한 레지스트의 감도 증진효과는 pTBMA는 4배, pTHPMA는 2배 정도 증진되었지만, pTBOCST의 경우는 감도 증진효과가 미미하였다. 이를 통하여 산증식제의 감도 증진효과와 열적 안정성은 수지의 종류에 따라 다르게 나타나는 것을 알 수 있었다.

• 열처리공학회지
• /
• 제14권6호
• /
• pp.345-349
• /
• 2001

This study has investigated the effect of thermal stability and mechanical property of $Fe_{80-X}P_{10}C_6B_4M_X$(X=2, 4, 6, M=transition metal) amorphous alloys fabricated by the melt-spun process. The glass transition temperature($T_g$), crystallization temperature($T_x$) and hardness increase with decreasing electron concentration (e/a) from about 7.38 to 7.18. The decrease of e/a implies the increase in the attractive bonding state between the M elements and other constituent element. The decrease in a/e leads to the enhancement of the attractive bonding state among the constituent elements which is favorable for the increase in $T_g$, $T_x$ and hardness.