• Journal of Microbiology and Biotechnology
• /
• v.30 no.5
• /
• pp.662-667
• /
• 2020

Epidermal growth factor receptor (EGFR) mutations are not only genetic markers for diagnosis but also biomarkers of clinical-response against tyrosine kinase inhibitors (TKIs) in non-small cell lung cancer (NSCLC). Among the EGFR mutations, the in-frame deletion mutation in EGFR exon 19 kinase domain (EGFR exon 19-del) is the most frequent mutation, accounting for about 45% of EGFR mutations in NSCLCs. Development of sensitive method for detecting the EGFR mutation is highly required to make a better screening for drug-response in the treatment of NSCLC patients. Here, we developed a fluorometric tandem gene amplification assay for sensitive detection of low-abundance EGFR exon 19-del mutant genomic DNA. The method consists of pre-amplification with PCR, thermal cycling of ligation by Taq ligase, and subsequent rolling circle amplification (RCA). PCR-amplified DNA from genomic DNA samples was used as splint DNA to conjugate both ends of linear padlock DNA, generating circular padlock DNA template for RCA. Long stretches of ssDNA harboring multiple copies of G-quadruplex structure was generated in RCA and detected by thioflavin T (ThT) fluorescence, which is specifically intercalated into the G-quadruplex, emitting strong fluorescence. Sensitivity of tandem gene amplification assay for detection of the EGFR exon 19-del from gDNA was as low as 3.6 pg, and mutant gDNA present in the pooled normal plasma was readily detected as low as 1% fraction. Hence, fluorometric detection of low-abundance EGFR exon 19 deletion mutation using tandem gene amplification may be applicable to clinical diagnosis of NSCLC patients with appropriate TKI treatment.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.305-305
• /
• 2010

It is known that a pulse of electrons of high kinetic energy (1-3 eV) in metals can be generated with the deposition of external energy to the surface such as in the absorption of light or in exothermic chemical processes. These energetic electrons are not in thermal equilibrium with the metal atoms and are called "hot electrons" The concept of photon energy conversion to hot electron flow was suggested by Eric McFarland and Tang who directly measured the photocurrent on gold thin film of metal-semiconductor ($TiO_2$) Schottky diodes [1]. In order to utilize this scheme, we have fabricated metal-semiconductor Schottky diodes that are made of Pt or Au as a metallic layer, Si or $TiO_2$ as a semiconducting substrate. The Pt/$TiO_2$ and Pt/Si Schottky diodes are made by PECVD (Plasma Enhanced Chemical Vapor Deposition) for $SiO_2$, magnetron sputtering process for $TiO_2$, e-beam evaporation for metallic layers. Metal shadow mask is made for device alignment in device fabrication process. We measured photocurrent on Pt/n-Si diodes under AM1.5G. The incident photon to current conversion efficiency (IPCE) at different wavelengths was measured on the diodes. We also show that the steady-state flow of hot electrons generated from photon absorption can be directly probed with $Pt/TiO_2$ Schottky diodes [2]. We will discuss possible approaches to improve the efficiency of photon energy conversion.

• 한국신재생에너지학회:학술대회논문집
• /
• 2009.11a
• /
• pp.383-383
• /
• 2009

Silicon is commercially prepared by the reaction of high-purity silica with wood, charcoal, and coal, in an electric arc furnace using carbon electrodes, so called the metallurgical refining process, which produces ~98% pure Si (MG-Si). This can be further purified to solar grade silicon (SoG-Si) by various techniques. The most problematic impurity elements are B and P because of their high segregation coefficients. In this study, we explored the possibility of the using Cat-CVD for Si purification. The existing hot-wire CVD was modified to accommodate the catalyzer and the heating source. Mo boat (1.5 cm ${\times}$ 1 cm ${\times}$ 0.2 cm) was used as a heating source. Commercially available Si was purchased from Nilaco corporation (~99% pure). This powder was kept in the Mo-boat and heated to the purification temperature. In addition to the purification by cat-CVD technique, other methods such as thermal CVD, plasma enhanced CVD, vacuum annealing was also tried. It is found that the impurities are reduced to a great extent when treated with cat-CVD method.

• Fire Science and Engineering
• /
• v.26 no.3
• /
• pp.60-66
• /
• 2012

In this study, it was evaluated the fire risk during welding cutting tasks. Welding-cutting machines are representatively used at construction sites. Inverter AC/DC TIG welding macnine and inverter air plasma cutting machine were used in experiments. Temperature of spreaded cinders was measured using a thermal camera. Cinder sizes and spread range were measured according to the height and input current. It was also evaluated the fire risk during welding-cutting process, when flammable materials were located around the working area. There were used hay, dust fence, urethane foam, vinyl, paper and oil as flammable materials. Temperature of spreaded cinders was reached at about $450^{\circ}C$. Cinders were spread approximately 4.7 m, when a worker carried out cutting process at 2.5 m height. The possibility of a fire is very high, when flammable materials were located around the working area.

• Korean Journal of Materials Research
• /
• v.5 no.3
• /
• pp.357-363
• /
• 1995

PECVD(Plasma-enhanced Chemical Vapor Deposition)법을 이용하여 증착한 $Ta_{2}$O_{5}$ 박막의 전기적 특성과 미세구조에 미치는 RTA(Rapid Thermal annealing) 후속 고온 열처리의 영향을 조사하였다. $Ta_{2}$O_{5}$ 박막의 미세구조와 interface 거동을 관찰하기 위하여XRD(X-ray Diffractometer), TEM(Transmission Electron Microscope), AES(Auger Electron Spectroscope) 분석을 실시하였으며, 전기적 특성을 관찰하기 위하여 I-V, C-V 측정을 하였다. $600^{\circ}C$에서 60초간 열처리를 실시하였을 경우 가장 우수한 유전 특성 및 누설 전류 특성을 보였으며, 유전 상수는 26이었고 누설 전류는 5 $\times$ $10^{-11}$A/$cm^{2}$이었다. $600^{\circ}C$ 이상의 온도에서 행한 열처리에 의하여 박막의 누설 전류와 유전 특성은 복합적으로 영향을 받았음을 알 수 있었다. 이는 $600^{\circ}C$의 열처리에서 이루어지고있는 박막의 결함감소와 고밀화 현상과 함께 80$0^{\circ}C$ 이상의 열처리에서 발생하는 조밀육방정 결정 구조를 가지는 $\delta$-$Ta_{2}$O_{5}$의 결정화에 기인함을 알 수 있었다. 또한 TEM과 AES분석 결과로부터 이들 박막의 누설 전류와 유전상수의 변화는 열처리에 의하여 일어나는 Ta-O-Si transition층의 생성과 성장에 기인함을 알 수 있었다. 따라서 $Ta_{2}$O_{5}$ 박막의 전기적 특성의 변화는 RTA 후속 열처리에 따른 계면 반응과 결정화 그리고 박막의 조밀화에 그 영향이 있음을 알 수 있었다.

• Analytical Science and Technology
• /
• v.14 no.3
• /
• pp.253-258
• /
• 2001

This is a research on hazardous characteristics and potentials of bottom ash from 9 municipal solid waste combustors(200 tons/day) of Korea by the test methods of leaching and content. The leaching method was performed by Waste Test Method of Korea. In case of the content method, mercury was determined by thermal decomposition amalgamation atomic absorption spectrometer, other 9 elemets including Pb, which were pretreated by U.S.EPA SW-846 3050B method, were determined by flame atomic absorption spectrometer(FAAS) or inductively coupled plasma atomic emission spectrometer(ICP-AES). Results of leaching test showed that Pb and Cu was main pollutants. It was interested that the distribution rate of metals' contents of each combustors was similar and the rank of concentration was Fe>Zn>Cu>Mn>Pb>Cr>As>Cd>Hg.

• Journal of the Korean Society for Aeronautical & Space Sciences
• /
• v.43 no.8
• /
• pp.712-721
• /
• 2015

Pulse Detonation Engine (PDE) has been considered as a future propulsion system for broad range of operation and higher thermal efficiency. Various subsystem technologies have been studied for more than decade to improve the performance of the potential system. New valve systems has been developed for the stable operation at high frequency including inflow-driven valve, rotary valve and valveless system. To foster the detonation initiation with a little ignition energy, plasma ignition method and DDT (deflagration to detonation transition) acceleration method such as swept ramp mechanism have been studied. Fluidic nozzle system and other nozzle system are the ongoing research topics to maximize the propulsion performance of the PDE. Present paper introduces the state of the art of PDE subsystem technologies developed in recent years.

• Journal of The Korean Astronomical Society
• /
• v.34 no.4
• /
• pp.309-311
• /
• 2001

Strong thermal X-ray emission, called Galactic Ridge X-ray Emission, is observed along the Galactic plane (Koyama et al. 1986). The origin of hot ($\~$7 keV) component of GRXE is not known, while cool ($\~$0.8 keV) one is associated with supernovae (Kaneda et al. 1997, Sugizaki et al. 2001). We propose a possible mechanism to explain the origin; locally strong magnetic fields of $B_{local}\;\~30{\mu}G$ heat interstellar gas to $\~$7 keV via magnetic reconnection (Tanuma et al. 1999). There will be the small-scale (< 10 pc) strong magnetic fields, which can be observed as $(B)_{obs} \;\~3{\mu}G$ by integration of Faraday Rotation Measure, if it is localized by a volume filling factor of f $\~$ 0.1. In order to examine this model, we solved three-dimensional (3D) resistive magnetohydrodynamic (MHD) equations numerically to examine the magnetic reconnect ion triggered by a supernova shock (fig.l). We assume that the magnetic field is Bx = 30tanh(y/20pc) $\mu$G, By = Bz = 0, and the temperature is uniform, at the initial condition. We put a supernova explosion outside the current sheet. The supernova-shock, as a result, triggers the magnetic reconnect ion, and the gas is heatd to > 7 keV. The magnetic reconnect ion heats the interstellar gas to $\~$7 keV in the Galactic plane, if it occurs in the locally strong magnetic fields of $B_{local}\;\~30{\mu}G$. The heated plasma is confined by the magnetic field for $\~10^{5.5} yr$. The required interval of the magnetic reconnect ions (triggered by anything) is $\~$1 - 10 yr. The magnetic reconnect ion will explain the origin of X-rays from the Galactic ridge, furthermore the Galactic halo, and clusters of galaxies.

• Animal cells and systems
• /
• v.15 no.3
• /
• pp.219-225
• /
• 2011

We studied oxidative stress in cinnamon clownfish exposed to hypoosmotic (35 psu ${\rightarrow}$ 17.5 psu and 17.5 psu with prolactin (PRL)) and low temperature ($28^{\circ}C{\rightarrow}24^{\circ}C$ and $20^{\circ}C$) conditions by measuring the expression and activity of Cu/Zn-superoxide dismutase (Cu/Zn-SOD), catalase (CAT), and glutathione peroxidase (GPX). The expression and activity of the antioxidant enzymes were significantly higher after the fish were exposed to $24^{\circ}C$, $20^{\circ}C$, and 17.5 psu, and expression was repressed by PRL treatment. Furthermore, we measured $H_2O_2$ and lipid peroxidation levels and found that they were significantly higher after exposure to the hypoosmotic and low-temperature environments. Additionally, we investigated changes in plasma AST and ALT levels after exposure to low temperature and hypoosmotic stress. These levels increased upon exposure of the clownfish to $24^{\circ}C$, $20^{\circ}C$, and 17.5 psu, but the levels of these parameters decreased in the 17.5 psu with PRL treatment during a salinity change. The results indicate that hypoosmotic and low-temperature conditions induce oxidative stress in cinnamon clownfish and that the parameters tested in this study may be indices of oxidative stress in the cinnamon clownfish.

• Korean Journal of Materials Research
• /
• v.30 no.3
• /
• pp.142-148
• /
• 2020

Graphene has attracted the interest of many researchers due to various its advantages such as high mobility, high transparency, and strong mechanical strength. However, large-area graphene is grown at high temperatures of about 1,000 ℃ and must be transferred to various substrates for various applications. As a result, transferred graphene shows many defects such as wrinkles/ripples and cracks that happen during the transfer process. In this study, we address transfer-free, large-scale, and high-quality monolayer graphene. Monolayer graphene was grown at low temperatures on Ti (10nm)-buffered Si (001) and PET substrates via plasma-assisted thermal chemical vapor deposition (PATCVD). The graphene area is small at low mTorr range of operating pressure, while 4 × 4 ㎠ scale graphene is grown at high working pressures from 1.5 to 1.8 Torr. Four-inch wafer scale graphene growth is achieved at growth conditions of 1.8 Torr working pressure and 150 ℃ growth temperature. The monolayer graphene that is grown directly on the Ti-buffer layer reveals a transparency of 97.4 % at a wavelength of 550 nm, a carrier mobility of about 7,000 ㎠/V×s, and a sheet resistance of 98 W/□. Transfer-free, large-scale, high-quality monolayer graphene can be applied to flexible and stretchable electronic devices.