• 제목/요약/키워드: thermal plasma

검색결과 1,183건 처리시간 0.039초

용사를 이용한 고기능 $TiO_2$-생분해성 플라스틱 복합재료의 개발 (The Development of Functional $TiO_2$-Biodegradable Plastic Composite Material by Thermal Spraying)

  • 방희선;방한서;;;주성민;윤덕영
    • 대한용접접합학회:학술대회논문집
    • /
    • 대한용접접합학회 2004년도 춘계 학술발표대회 개요집
    • /
    • pp.316-318
    • /
    • 2004
  • In recent years, plastic waste has been recognized as a worldwide environmental issue. To solve the disposal problem of the plastic waste, alternative treatment such as the use of biodegradable plastic(polybutylene succinate: PBS) is indeed highly in demand due to its merit of PBS buried in soil decomposed into carbon dioxide and water. In the present study, for the production of further functional PBS with TiO$_2$ as photocatalyst, which shows the decomposition of detrimental organic compound and pollutant under ultraviolet irradiation, we attempted to prepare photocatalytic TiO$_2$ coatings on PBS substrate by HVOF and plasma spraying techniques under various conditions using three kinds of agglomerated powders (P200: 200nm, P30: 30nm, P7: 7nm). The microstructures of coatings were characterized with SEM and XRD analysis, and the photocatalytic efficiency of coatings was evaluated through the photo degradation of gaseous acetaldehyde. Therefore, such functional TiO$_2$-Plastic composite material is expected to considerably contribute to the reduction of aggravated environmental problem.

  • PDF

P형 in-situ 도핑 폴리실리콘 막질에 관한 연구 (Study on P-type in-situ doped Polysilicon Films)

  • 오정섭;이상은;노진태;이상우;배경성;노용한
    • 한국전기전자재료학회논문지
    • /
    • 제21권3호
    • /
    • pp.208-212
    • /
    • 2008
  • This paper reports physical properties of in situ boron doped silicon films made from boron source gas and silane ($SiH_4$) gas in a conventional low-pressure chemical vapor deposition vertical furnace. If the p-type polysilicon is formed by boron implantation into undoped polysilicon, the plasma nitridation (PN) process is added on the oxide in order to suppress boron penetration that can be caused during the thermal treatments used in fabrication. In-situ boron doped polysilicon deposition can complete p-type polysilicon film with only one deposition process and need not the PN process, because there is not interdiffusion of dopant at the intermediate temperatures of the subsequent steps. Since in-situ boron doped polysilicon films have higher work function than that of n-type polysilicon and they are compatible with the underlying oxide, they may be promising materials for improving memory cell characteristics if we make its profit of these physical properties.

KSTAR 진공용기용 용접 Bellows 개발 (Development of the Welded Bellows for KSTAR Vacuum Vessel)

  • 허남일;김병철;김근홍;홍권희;사정우;김학근;김경민;박주식
    • 대한기계학회:학술대회논문집
    • /
    • 대한기계학회 2003년도 추계학술대회
    • /
    • pp.1098-1102
    • /
    • 2003
  • Vacuum vessel of the KSTAR(Korea Superconducting Tokamak Advanced Research) tokamak is a fully welded structure with D-shaped cross-section. According to the requirements of the physics design, sixteen horizontal ports, sixteen slanted ports, sixteen baking and cooling ports, and twenty-four top and bottom vertical ports are designed for the diagnostics, plasma heating, vacuum pumping, and baking and cooling. Bellows on these ports are used for flexible components to absorb the relative displacement due to the vacuum vessel thermal expansion and the electromagnetic force between the vacuum vessel and the cryostat ports. Fatigue strength evaluation was performed to decide the dimension of the bellows. In order to assure the quality of the bellows, a prototype bellows for the neutral beam injection port has been fabricated and tested prior to main fabrication. It was conformed that the prototype bellows has sufficient fatigue strength and vacuum reliability in the expected load conditions.

  • PDF

Preparation of Novel Magnesium Precursors and MgO Thin Films Growth by Atomic Layer Deposition (ALD)

  • Kim, Hyo-Suk;park, Bo Keun;Kim, Chang Gyoun;Son, Seung Uk;Chung, Taek-Mo
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
    • /
    • pp.364.2-364.2
    • /
    • 2014
  • Magnesium oxide (MgO) thin films have attracted great scientific and technological interest in recent decades. Because of its distinguished properties such as a wide band gap (7.2 eV), a low dielectric constant (9.8), a low refractive index, an excellent chemical, and thermal stability (melting point=$2900^{\circ}C$), it is widely used as inorganic material in diverse areas such as fire resistant construction materials, optical materials, protective layers in plasma display panels, buffer layers of multilayer electronic/photonic devices, and perovskite ferroelectric thin films. Precursor used in the ALD requires volatility, stability, and low deposition temperature. Precursors using a heteroleptic ligands with different reactivity have advantage of selective reaction of the heteroleptic ligands on substrate during ALD process. In this study, we have synethesized new heteroleptic magnesium precursors ${\beta}$-diketonate and aminoalkoxide which have been widely used for the development of precursor because of the excellent volatility, chelating effects by increasing the coordination number of the metal, and advantages to synthesize a single precursor. A newly-synthesized Mg(II) precursor was adopted for growing MgO thin films using ALD.

  • PDF

DC 마그네트론 스퍼터법에 의한 ZnO:Al 투명전도막 특성 (Some properties of ZnO:Al Transparent Conducting Films by DC Magnetron Sputtering Method)

  • 박강일;김병섭;김현수;임동건;박기엽;이세종;곽동주
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
    • /
    • pp.143-146
    • /
    • 2003
  • Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure and discharge power on the electrical, optical and morphological properties were investigated experimentally. The consideration on the effect of doping amounts of Al on the electrical and optical properties of ZnO thin film were also carried out. ZnO:Al films with the optimum growth conditions showed resistivity of $9.42{\times}10^{-4}\;{\Omeg}-cm$ and transmittance of 90.88% for 840nm in film thickness in the wavelength range of the visible spectrum.

  • PDF

펨토초 레이저에 의한 투명 유리내부 미세가공특성 (Micromachining Characteristics inside Transparent Materials using Femtoseocond Laser Pulses)

  • 남기곤;조성학;장원석;나석주;황경현;김재구
    • 한국정밀공학회지
    • /
    • 제23권5호
    • /
    • pp.190-196
    • /
    • 2006
  • Transparent materials are widely used in the fields of optic parts and bio industry. We have experiment to find out the characteristics of the micromachining inside transparent materials using femtosecond laser pulses. With its non-linear effects by very high peak intensity, filament (plasma channel) was formed by the cause of the self-focusing and the self-defocusing. Physical damage could be found when the intensity is high enough to give rise to the thermal stress or evaporation. At the vicinity of the power which makes the visible damage or modification, the structural modification occurs with the slow scanning speed. According to the polarization direction to the scanning direction, the filament quality is quite different. There is a good quality when the polarization direction is parallel to the scanning direction. For fine filament, we could suggest the conditions of the high numerical aperture lens, the short shift of focusing point, the low scanning speed and the low power below 20 mW. As the examples of optics parts, we fabricated the fresnel zone plate with the $225{\mu}m$ diameter and Y-bend optical wave guide with the $5{\mu}m$ width.

Raman Spectroscopy Studies of Graphene Nanoribbons and Chemical Doping in Graphene

  • Ryu, Sun-Min
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
    • /
    • pp.15-15
    • /
    • 2011
  • Atom-thick graphene membrane and nano-sized graphene objects (NGOs) hold substantial potential for applications in future molecular-scale integrated electronics, transparent conducting membranes, nanocomposites, etc. To realize this potential, chemical properties of graphene need to be understood and diagnostic methods for various NGOs are also required. To meet these needs, chemical properties of graphene and optical diagnostics of graphene nanoribbons (GNRs) have been explored by Raman spectroscopy, AFM and STM scanning probes. The first part of the talk will illustrate the role of underlying silicon dioxide substrates and ambient gases in the ubiquitous hole doping of graphene. An STM study reveals that thermal annealing generates out-of-plane deformation of nanometer-scale wavelength and distortion in $sp^2$ bonding on an atomic scale. Graphene deformed by annealing is found to be chemically active enough to bind molecular oxygen, which leads to a strong hole-doping. The talk will also introduce Raman spectroscopy studies of GNRs which are known to have nonzero electronic bandgap due to confinement effect. GNRs of width ranging from 15 nm to 100 nm have been prepared by e-beam lithographic patterning of mechanically exfoliated graphene followed by oxygen plasma etching. Raman spectra of narrow GNRs can be characterized by upshifted G band and strong disorder-related D band originating from scattering at ribbon edges. Detailed analysis of the G, D, and 2D bands of GNRs proves that Raman spectroscopy is still a reliable tool in characterizing GNRs despite their nanometer width.

  • PDF

ECR Microwave 중성입자빔을 이용한 Si 양자점 형성 및 특성분석

  • 박종배;오경숙;김대철;김종식;김영우;윤정식;유석재;이봉주;선호정
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
    • /
    • pp.397-397
    • /
    • 2011
  • 최근 태양전지 연구가 활발히 진행되는 가운데 저가 고효율 태양전지로 제안되는 제3세대 태양전지로 Quantum Dots (QD: 양자점) 태양전지에 대한 연구가 많은 연구자들에 의해 관심이 모아지고 있다. 현재까지 보고된 최고효율은 NSWU의 13%의 효율을 보고하고 있으며, 국내에서도 다양한 분야에서 연구가 진행되고 있다. 본 연구에서는 기존의 PECVD에서 문제시 되고 있는 플라즈마에 의한 박막손상과 고온 증착온도 등의 단점을 보완한 증착 기술로 중성입자빔 (Hyper-thermal neutral beam ; HNB)을 이용한 저온 증착방법에 대한 연구를 진행하였다. 유리기판과 p-type Si 기판 그리고 SiNx 박막 위에 Ar, He, H2, 그리고 SiH4 가스를 소스 가스로 활용하여 ECR-microwave 플라즈마에서 생성된 중서입자빔을 이용한 Si 양자점을 형성하였고, Si 양자점 형성 특성과 크기제어 방법에 대한 연구를 진행하였다. 또한 TEM, FTIR, Raman, Photo Luminescence 등의 분석 방법을 이용하여 결정성 및 성분 등을 분석하여 HNB의 특성 및 효과를 규명하였다.

  • PDF

P형 열전분말의 수소환원처리가 상온열전특성에 미치는 영향 (Effect of Hydrogen Reduction Treatment on Room-Temperature Thermoelectric Performance of p-type Thermoelectric Powders)

  • 김경태;장경미;하국현
    • 한국분말재료학회지
    • /
    • 제17권2호
    • /
    • pp.136-141
    • /
    • 2010
  • Bismuth-telluride based $(Bi_{0.2}Sb_{0.8})_2Te_3$ thermoelectric powders were fabricated by two-step planetary milling process which produces bimodal size distribution ranging $400\;nm\;{\sim}\;2\;{\mu}m$. The powders were reduced in hydrogen atmosphere to minimize oxygen contents which cause degradation of thermoelectric performance by decreasing electrical conductivity. Oxygen contents were decreased from 0.48% to 0.25% by the reduction process. In this study, both the as-synthesized and the reduced powders were consolidated by the spark plasma sintering process at $350^{\circ}C$ for 10 min at the heating rate of $100^{\circ}C/min$ and then their thermoelectric properties were investigated. The sintered samples using the reduced p-type thermoelectric powders show 15% lower specific electrical resistivity ($0.8\;m{\Omega}{\cdot}cm$) than those of the as-synthesized powders while Seebeck coefficient and thermal conductivity do not change a lot. The results confirmed that ZT value of thermoelectric performance at room temperature was improved by 15% due to high electric conductivity caused by the controlled oxygen contents present at bismuth telluride materials.

이중 베리어 방전 반응기를 사용한 $NO_x$ 제거에 관한 연구 (A Study on the Double Dielectric Barrier Discharge for $NO_x$ reduction)

  • 김동욱;김응복;정영식
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 1999년도 하계학술대회 논문집 E
    • /
    • pp.2182-2185
    • /
    • 1999
  • In this experimental study we propose the double dielectric barrier discharge(DDBD) reactor to produce as high an electric field as possible. DDBD reactor is designed to remove $NO_x$ at atmospheric pressures from the moving pollution source such as diesel automobile DDBD reactor consisted of two cylinder glass tubes arranged so that the gas flow was directed between the two tubes. Inside of the inner tube was filled with small metal beads and outside of the inner tube was wounded with stainless wire to form the electrode. The outer tube was surrounded by an aluminum foil In this reactor there are three electrodes, i.e. metal bead(C), helical wire(I) and aluminum foil(0). By using DDBD reactor we will report some interesting results of treatment of the gas which is the dilute mixtures of NO in N2. And then we compared thee results with the results of cylinder-wire(CW) which is one of popularly used reactor in non-thermal plasma applications.

  • PDF