• 한국재료학회지
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• 제7권6호
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• pp.472-478
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• 1997

TMS(tetramethysilane, Si(CH$_{3}$)$_{4}$)를 이용하여 RTCVD(rapid thermal chemical vapor deposition)장치에서 Si(111) 기판 위에 $\beta$-SiC(111)를 성장시켰다. 실험변수로는 반응온도, TMS유량, 반응시간, H$_{2}$유량을 변화시켰으며, XRD, IR, SEM, RBS, TEM등을 이용하여 성장된 박막을 분석하였다. 성장된 박막은 crystallized Si, C또한 Si-H, C-H결합은 관찰할 수 없었으나 다결정이었다. TMS의 유량이 증가함에 따라, 성장온도가 감소함에 따라서 미려한 박막을 성장시킬 수 있었으며, 반응의 활성화에너지는 20kcal/molㆍK이었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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• pp.860-862
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• 1999

we have grown vertically aligned carbon nanotubes on a large area of Co-Ni codeposited Si substrates by thermal chemical vapor deposition using $C_{2}H_{2}$ gas. The carbon nanotubes grown by the thermal chemical vapor deposition are multi-wall structure, and the wall solace of nanotubes is covered with defective carbons or carbonaceous particles. The carbon nanotubes range from 50 to 120nm in diameter and about $130{\mu}m$ in length at $950^{\circ}C$. The turn-on voltage was about $0.8V/{\mu}m$ with a current density of $0.1{\mu}A/cm^2$ and emission current reveals the Fowler-Nordheim mode.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.135.2-135.2
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• 2010

Carbon nanotube(CNT) has been spotlighted as a promising candidate for catalyst support material for PEMFC (proton exchange membrane fuel cell). The considerable properties of CNT include high surface area, outstanding thermal, electrical conductivity and mechanical stability. In this study, to fully utilize the properties of CNTs, we prepared directly oriented CNT on carbon paper as a catalyst support in the cathode electrode. The CNT layer was prepared by a chemical vapor deposition(CVD) process. And the Pt particles were deposited on the CNT oriented carbon paper by impregnation and eletro-deposition method. The potential advantages of directly oriented CNT on carbon paper can include improved thermal and charge transfer through direct contact between the electrolyte and the electrode and enhanced exposure of Pt catalyst sites during the reaction.

• 전자공학회논문지A
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• 제33A권10호
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• pp.98-106
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• 1996

A thin film of aluminum for ultra large scale integrated circuits metalization has been deposited on TiN and SiO$_{2}$ substrates by plasma assisted chemical vapor deposition using DMEAA (dimenthylethylamine alane) as a precursor. The effects of plasma on surface topology and growth characteristics were investigated. Thermal CVD Al could not be got continuous films on insulating subsrate such as SiO$_{2}$. However, it was found that Al films could be deposited on SiO$_{2}$ substate without any pretreatments by the hydrogen plasma for pyrolysis of DMEAA. Compared to the thermal CVD, PACVD films showed much better reflectance and resistance on TiN and SiO$_{2}$ substrate. We obtained mirror-like PACVD Al film of 90% reflectance and resistance on TiN and SiO$_{2}$ substrates. We obtained mirror-like PACVD Al film of 90% reflectance on TiN substrate. Excellent conformal step coverage was obtained on submicron contact holes ;by the PACVD blanket deposition.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.185-190
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• 2003

In this paper, it was demonstrated that the organic thin film transistors were fabricated by the organic gate insulators with vapor deposition polymerization (VDP) processing. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 4,4'-oxydiphthalic anhydride (ODPA) and 4,4'-oxydianiline (ODA) and 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride (6FDA) and ODA, and cured at $150^{\circ}C$ for 1hr. Electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure obtained to the saturated slop in the saturation region and the subthreshold non-linearity in the triode region. Field effect mobility, threshold voltage, and on-off current ratio in $0.45\;{\mu}m$ thick gate dielectric layer were about $0.17\;cm^2/Vs$, -7 V, and $10^6\;A/A$, respectively. Details on the explanation of compared to organic thin-film transistors (OTFTS) electrical characteristics of ODPA-ODA and 6FDA-ODA as gate insulators by fabricated thermal co-deposition method.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.760-763
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• 2007

The properties of carbon nanotube obtained by thermal chemical vapor deposition (CVD) process were investigated as a function of ammonia $(NH_3)$ gas in hydrocarbon gas, Fe catalyst thickness, and growth temperature. Fe catalyst was prepared by DC magnetron sputter and pre-treated with ammonia gas. CNTs were then grown with ammonia-acetylene gas mixture by thermal CVD. The diameter of these CNTs shows a strong correlation with the gas rate, the catalyst film thickness and temperature. From our results, it was found that the factors of grown CNTs positively acted to improve CNT quality.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.362-362
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• 2012

Graphene-based materials have been gaining the unprecedented academic and industrial applications, due to the unique charge transport as a new kind of 2-dimensional materials. The applications incorporate electronic devices, nonvolatile memories, batteries, chemical sensors, etc. based on the electrical, mechanical, structural, optical, and chemical features newly reported. The current work employs thermal chemical vapor deposition involving H2 and CH4, in order to synthesize the 2-dimensional graphene materials. The qualitative/quantitative characterizations of the synthesized graphene materials are evaluated using Raman spectroscopy and Hall Measurements, In particular, the effect of processing variables is systematically investigated on the formation of graphene materials through statistical design of experiments. The optimized graphene materials will be attempted towards the potential applications to flat-panel displays.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.212-212
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• 2000

Since the first obserbvation of carbon nanotubes, extensive researches have been done for the synthesis using arc discharge, laser vaporization, and plasma-enhanced chemical vapor deposition. Carbon nanotubes have unique physical and chemical properties and can allow nanoscale devices. Vertically aligned carbon nanotubes with high quality on a large area is particularly important to enable both fundamental studies and applications, such as flat panel displays and vacuum microelectronics. we have grown vertically aligned carbon nanotubes on a large area of Si substrates by thermal chemical vapor deposition using C2H2 gas at 750-950$^{\circ}C$. we deposited catalytic metal on Si susbstrate using thermal evaporation. The nanotubes reveal highly purified surface. The carbon nanotubes have multi-wall structure with a hollow inside and it reveals bamboo structure agreed with base growth model. Figure 1 shows SEM micrograph showing vertically aligned carbon nanotubes whih were grown at 950$^{\circ}C$ on a large area (20mm${\times}$30mm) of Si substrates. Figure 2 shows TEM analysis was performed on the carbon nanotubes grown at 950$^{\circ}C$ for 10 min. The carbon nanotubes are multi-wall structure with bamboo shape and the lack of fringes inside the nanotube indicates that the core of the structure is hollow. In our experiment, carbon nanotubes grown by the thermal CVD indicate base growth model.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.644-644
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• 2013

Graphene is a two-dimensional sp2 layer material. Despite the short history in the empirical synthesis of the graphene layers, the academic/industrial unique features have brought highly significant interest in research and development related to graphene-related materials. In particular, the electrical and optical performances have been targeted towards pre-existing microelectronicand emerging nanoelectronic applications. The graphene synthesis relies on a variety of processing factors, such as temperature, pressure, and gas ratios involving H2, CH4, and Ar, in addition to the inherent selection of copper substrates. The current work places its emphasis on the role of experimental factors in growing graphene thin films. The thermally-grown graphene layers are characterized using physical/chemical analyses, i.e., four point resistance measurements, Raman spectroscopy, and UV-Visible spectrophotometry. Ultimately, an optimization strategy is proposed in growing high-quality graphene layers well-controlled through empirical factors.

• 한국세라믹학회지
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• 제31권3호
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• pp.257-264
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• 1994

The objectives of this study were to develop the low pressure chemical vapor deposition(LPCVD) process of SiC and to fabricate pure and dense SiC layer onto graphite substrate at low temperature. The deposition experiments were performed using the MTS-H2 system (30 torr) in the deposition temperature ranging from 100$0^{\circ}C$ to 120$0^{\circ}C$. The deposition rate of SiC was increased with the temperature. The rate controlling step can be classified from calculated results of the apparent thermal activation energy as follows; surface reaction below 110$0^{\circ}C$ and gas phase diffusion through a stagnant layer over 110$0^{\circ}C$. The deposited layer was $\beta$-SiC with a preferred orientation of (111) and the strongly faceted SiC deposits were observed over 115$0^{\circ}C$.