• Tunnel and Underground Space
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• v.33 no.5
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• pp.312-338
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• 2023

The underground disposal facility for spent nuclear fuel demands a specialized design, distinct from conventional practices, to ensure long-term thermal, mechanical, and hydraulic integrity, preventing the release of radioactive isotopes from high-temperature spent nuclear fuel. SKB has established design criteria for such facilities and executed practical design implementations for Forsmark. Moreover, in response to subsurface uncertainty, SKB has proposed an empirical approach involving monitoring and adaptive design modifications, alongside stepwise development. SKB has further introduced a unique support system, categorizing ground types and behaviors and aligning them with corresponding support types to confirm safety through comparative analyses against existing systems. POSIVA has pursued a comparable approach, developing a support system for Onkalo while accounting for distinct geological characteristics compared to Forsmark. This demonstrates the potential for domestic implementation of spent nuclear fuel disposal facility designs and the establishment of a support system adapted to national attributes.

• Korean Chemical Engineering Research
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• v.52 no.2
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• pp.266-271
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• 2014

The effects of antioxidants on the properties of Polycarbonate/Acrylonitrile-Butadiene-Styrene(PC/ABS) blends were studied for the functions of the screw speed and loaded duration of high shear rate processing in order to investigate the degradation for PC/ABS blends. Tris-(2,4-di-tert-butyl-phenyl phosphate) (A1) and Bis(2,4-dicumylphenyl) pentaerythritol diphosphite (A3) as phosphite antioxidants and Octadecyl 3-(3,5-di-tert-butyl-4-hydroxyphenyl) propionate (A2) as a phenolic antioxidant are used. The thermal properties were detected by TGA and severely decreased, after the processing. The stress-induced and thermal degradation for PC/ABS blends with the antioxidant A3 was retarded better than the others. By using UTM, the mechanical properties also showed individually decreased according to the antioxidants, after the processing, especially, the elongations showed considerable decline behaviors, while the tensile strengths of PC/ABS blends changed very little. For example, in the operating conditions of 1000rpm of screw speed and 20 seconds of loaded period, the elongations decreased from 148% before the processing, to 91.6% with the A1, to 63% with the A2 and to 131% with the A3 after the processing, respectively. In order to get the morphological properties, the size distributions of the dispersed phases for PC/ABS were investigated by SEM analysis and tended to decrease, as the screw speed and loaded period of the processing increased. Therefore, we confirmed that the antioxidant A3 was the best of all of three to inhibit the stress-induced degradation of PC/ABS blends during the high shear rate processing.

• Journal of Korean Society for Atmospheric Environment
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• v.32 no.5
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• pp.501-512
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• 2016

The study evaluated methods to measure condensable fine particles in flue gases and measured particulate matter by fuel and material to get precise concentrations and quantities. As a result of the method evaluation, it is required to improve test methods for measuring Condensable Particulate Matter (CPM) emitted after the conventional Filterable Particulate Matter (FPM) measurement process. Relative Standard Deviation (RSD) based on the evaluated analysis process showed that RSD percentages of FPM and CPM were around 27.0~139.5%. As errors in the process of CPM measurement and analysis can be caused while separating and dehydrating organic and inorganic materials from condensed liquid samples, transporting samples, and titrating ammonium hydroxide in the sample, it is required to comply with the exact test procedures. As for characteristics of FPM and CPM concentrations, CPM had about 1.6~63 times higher concentrations than FPM, and CPM caused huge increase in PM mass concentrations. Also, emission concentrations and quantities varied according to the characteristics of each fuel, the size of emitting facilities, operational conditions of emitters, etc. PM in the flue gases mostly consisted of CPM (61~99%), and the result of organic/inorganic component analysis revealed that organic dusts accounted for 30~88%. High-efficiency prevention facilities also had high concentrations of CPM due to large amounts of $NO_x$, and the more fuels, the more inorganic dusts. As a result of comparison between emission coefficients by fuel and the EPA AP-42, FPM had lower result values compared to that in the US materials, and CPM had higher values than FPM. For the emission coefficients of the total PM (FPM+CPM) by industry, that of thermal power stations (bituminous coal) was 71.64 g/ton, and cement manufacturing facility (blended fuels) 18.90 g/ton. In order to estimate emission quantities and coefficients proper to the circumstances of air pollutant-emitting facilities in Korea, measurement data need to be calculated in stages by facility condition according to the CPM measurement method in the study. About 80% of PM in flue gases are CPM, and a half of which are organic dusts that are mostly unknown yet. For effective management and control of PM in flue gases, it is necessary to identify the current conditions through quantitative and qualitative analysis of harmful organic substances, and have more interest in and conduct studies on unknown materials' measurements and behaviors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).

• Journal of the Korean Ceramic Society
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• v.38 no.12
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• pp.1123-1131
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• 2001

The sintering behaviors of the renewed $Al_2$O$_3$ceramics were investigated as functions of the addition amount and particle size of recycling $Al_2$O$_3$powder, such as crushed powder of structural $Al_2$O$_3$ceramics and waste $Al_2$O$_3$adsorbent, were investigated. Pure $Al_2$O$_3$sample was fabricated by sintered at 1,$650^{\circ}C$ for 5h and it was crushed into powder (-40${\mu}{\textrm}{m}$and +40${\mu}{\textrm}{m}$ in particle size) by thermal shock treatment and crushing. Then, 10~50wt% of crushed $Al_2$O$_3$powder and waste $Al_2$O$_3$adsorbent were mixed with pure $Al_2$O$_3$powder and were subjected to re-sintering to renewed $Al_2$O$_3$sample. The density and the 3-point bending strength increased with increasing the sintering temperature without regard to the addition amount and particle size of recycling $Al_2$O$_3$powder, and that of the samples at the same sintering temperature decreased with increasing the addition amount and particle size of recycling $Al_2$O$_3$powder. Samples over 200 Mpa of 3-point bending strength were obtained by mixing ~30wt% of crushed $Al_2$O$_3$powder(-40${\mu}{\textrm}{m}$), ~20wt% of crushed $Al_2$O$_3$powder (+40${\mu}{\textrm}{m}$) and 10wt% of waste $Al_2$O$_3$adsorbent. 5~20wt% of waste glass powder containing renewed $Al_2$O$_3$samples for densification were fabricated by sintered at 1200~1$650^{\circ}C$ for 5h. The temperature of maximum density and 3-point bending strength decreased with increasing the addition amount of waste glass powder, however, these samples at above 140$0^{\circ}C$ showed lower density and bending strength than renewed $Al_2$O$_3$samples. The addition of waste glass powder did not improved the densification of renewed $Al_2$O$_3$sample.