• 제목/요약/키워드: the source materials

검색결과 3,052건 처리시간 0.029초

BCl3및 BCl3/Ar 고밀도 유도결합 플라즈마를 이용한 GaAs와 AlGaS 반도체 소자의 건식식각 (Dry Etching of GaAs and AlGaAs Semiconductor Materials in High Density BCl3and BCl3/Ar Inductively Coupled Plasmas)

  • 임완태;백인규;이제원;조관식;전민현
    • 한국재료학회지
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    • 제13권10호
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    • pp.635-639
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    • 2003
  • We investigated dry etching of GaAs and AiGaAs in a high density planar inductively coupled plasma system with BCl$_3$and BCl$_3$/Ar gas chemistry. A detailed etch process study of GaAs and ALGaAs was peformed as functions of ICP source power, RIE chuck power and mixing ratio of $BCl_3$ and Ar. Chamber process pressure was fixed at 7.5 mTorr in this study. The ICP source power and RIE chuck power were varied from 0 to 500 W and from 0 to 150 W, respectively. GaAs etch rate increased with the increase of ICP source power and RIE chuck power. It was also found that etch rates of GaAs in $15BCi_3$/5Ar plasmas were relatively high with applied RIE chuck power compared to pure 20 sccm $BCl_3$plasmas. The result was the same as AlGaAs. We expect that high ion-assisted effect in $BCl_3$/Ar plasma increased etch rates of both materials. The GaAs and AlGaAs features etched at 20 sccm $BCl_3$and $15BCl_3$/5Ar with 300 W ICP source power, 100 W RIE chuck power and 7.5 mTorr showed very smooth surfaces(RMS roughness < 2 nm) and excellent sidewall. XPS study on the surfaces of processed GaAs also proved extremely clean surfaces of the materials after dry etching.

탄소 원료가 다공질 Self-Bonded SiC (SBSC) 세라믹스의 기공율과 곡강도에 미치는 영향 (Effect of Carbon Source on Porosity and Flexural Strength of Porous Self-Bonded Silicon Carbide Ceramics)

  • 임광영;김영욱;우상국;한인섭
    • 한국세라믹학회지
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    • 제45권7호
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    • pp.430-437
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    • 2008
  • Porous self-bonded silicon carbide (SBSC) ceramics were fabricated at temperatures ranging from 1700 to $1850^{\circ}C$ using SiC, silicon (Si), and three different carbon (C) sources, including carbon black, phenol resin, and xylene. The effects of the Si:C ratio and carbon source on porosity and strength were investigated as a function of sintering temperature. Porous SBSC ceramics fabricated from phenol resin showed higher porosity than the others. In contrast, porous SBSC ceramics fabricated from carbon black showed better strength than the others. Regardless of the carbon source, the porosity increased with decreasing the Si:C ratio whereas the strength increased with increasing the Si:C ratio.

Measurement of the Thermal Conductivity of a Polycrystalline Diamond Thin Film via Light Source Thermal Analysis

  • Kim, Hojun;Kim, Daeyoon;Lee, Nagyeong;Lee, Yurim;Kim, Kwangbae;Song, Ohsung
    • 한국재료학회지
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    • 제31권12호
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    • pp.665-671
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    • 2021
  • A 1.8 ㎛ thick polycrystalline diamond (PCD) thin film layer is prepared on a Si(100) substrate using hot-filament chemical vapor deposition. Thereafter, its thermal conductivity is measured using the conventional laser flash analysis (LFA) method, a LaserPIT-M2 instrument, and the newly proposed light source thermal analysis (LSTA) method. The LSTA method measures the thermal conductivity of the prepared PCD thin film layer using an ultraviolet (UV) lamp with a wavelength of 395 nm as the heat source and a thermocouple installed at a specific distance. In addition, the microstructure and quality of the prepared PCD thin films are evaluated using an optical microscope, a field emission scanning electron microscope, and a micro-Raman spectroscope. The LFA, LaserPIT-M2, and LSTA determine the thermal conductivities of the PCD thin films, which are 1.7, 1430, and 213.43 W/(m·K), respectively, indicating that the LFA method and LaserPIT-M2 are prone to errors. Considering the grain size of PCD, we conclude that the LSTA method is the most reliable one for determining the thermal conductivity of the fabricated PCD thin film layers. Therefore, the proposed LSTA method presents significant potential for the accurate and reliable measurement of the thermal conductivity of PCD thin films.

Single source CVD of epitaxial 3C-SiC on Si(111) without carbonization

  • Lee, Kyung-Won;Yu, Kyu-Sang;Bae, Jung-Wook;Kim, Yun-Soo
    • Journal of Korean Vacuum Science & Technology
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    • 제1권1호
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    • pp.38-44
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    • 1997
  • Epitaxial growth of SiC films on Si(111) substrates without carbonization was carried out n the temperature range of 900-100$0^{\circ}C$ under high vacuum conditions by single source chemical vapor deposition (CVD) of 1,3-disilabutane (H$_3$SiCH$_2$SiH$_2$$CH_3$). The monocrystalline nature of the films was confirmed by XRD, RHEED and cross-sectional TED. Cross-sectional TEM image indicated that no void exists and the boundary is clear and smooth at the SiC-Si(111) interface. RBS and AES analyses also showed that the films are stoichiometric and homogeneous in depth, From the results, this single source growth techniqe of using 1,3-disilabutane has been found suitable and effective for epitaxial growth of stoichiometric SiC on Si(111) without carbonization at temperatures below 100$0^{\circ}C$.

Low-Noise MEMS Microphone Readout Integrated Circuit Using Positive Feedback Signal Amplification

  • Kim, Yi-Gyeong;Cho, Min-Hyung;Lee, Jaewoo;Jeon, Young-Deuk;Roh, Tae Moon;Lyuh, Chun-Gi;Yang, Woo Seok;Kwon, Jong-Kee
    • ETRI Journal
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    • 제38권2호
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    • pp.235-243
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    • 2016
  • A low-noise readout integrated circuit (ROIC) for a microelectromechanical systems (MEMS) microphone is presented in this paper. A positive feedback signal amplification technique is applied at the front-end of the ROIC to minimize the effect of the output buffer noise. A feedback scheme in the source follower prevents degradation of the noise performance caused by both the noise of the input reference current and the noise of the power supply. A voltage booster adopts noise filters to cut out the noise of the sensor bias voltage. The prototype ROIC achieves an input referred noise (A-weighted) of -114.2 dBV over an audio bandwidth of 20 Hz to 20 kHz with a $136{\mu}A$ current consumption. The chip is occupied with an active area of $0.35mm^2$ and a chip area of $0.54mm^2$.

Growth rate and growth steps of 6H-SiC single crystals in the sublimation process

  • Kang, Seung-Min;Lim, Chang-Sung;Auh, Keun-Ho
    • 한국결정성장학회지
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    • 제11권4호
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    • pp.166-169
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    • 2001
  • 6H-SiC bulk crystals were grown by sublimation method with different conditions in term of gaseous pressures ad source temperatures. In order to optimize the growth rate, pressure at growth period and source and substrate temperatures were investigated as experimental variables. the results were compared with each other and finally the optimum growth conditions were discussed. Furthermore the relation of the growth steps and defects formation was evaluates in the point of reducing the micropipes. Subsequently the growth steps and defects formation was evaluated in the point of reducing the micropipes. Subsequently the growth steps were observed leading to the lower step height with the lower growth rate.

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Effects of Inplane Modes in SEA on Structure-Borne Noise Transmission in Ship Structures

  • Kim, Jae-S.;Kim, Hyun-S.;Kang, Hyun-J.;Kim, Sang-R.
    • Journal of Hydrospace Technology
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    • 제2권1호
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    • pp.18-26
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    • 1996
  • It is normal practice to consider bending wave modes only, when one applies SEA (Statistical Energy Analysis) to ship structures because of complexities in SEA modeling and evaluation of coupling loss factors for inplane modes. According to the result of Tratch[1], the inplane wave modes becomes important for the analysis of a foundation structure as the distance from the source and receiver increases. In this paper, the effect of inplane wave modes on structure-borne noise propagation in ship structures is presented. It is shown that the inplane wave could increase the noise level more than 10 dB compared with the results without inplane wave modes at high frequency bands for compartments far from the source location.

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그라우팅 재료가 지중 유효열전도도에 미치는 영향 (Effect of Grouting Materials on Ground Effective Thermal Conductivity)

  • 손병후
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2007년도 춘계학술대회B
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    • pp.3371-3376
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    • 2007
  • The design of a ground-source heat pump system includes specifications for a ground loop heat exchanger where the heat transfer rate depends on the thermal conductivity of the ground. To evaluate this heat transfer property, in-situ thermal response tests on four vertical test boreholes with different grouting materials were conducted by adding a monitored amount of heat to water over various test lengths. By measuring the water temperatures entering and exiting the loop, water flow rate, and heat load, effective thermal conductivity values of the ground were determined. The effect of increasing thermal conductivity of grouting materials from 0.82 to 1.05 W/m$^{\circ}C$ resulted in overall increases in effective ground thermal conductivity by 25.8% to 69.5%.

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Composite and Porcelain Laminates and Veneers/Clinical Choice of Materials and Techniques

  • Wei, Stephen-H.
    • 대한치과보존학회:학술대회논문집
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    • 대한치과보존학회 2002년도 추계학술대회
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    • pp.719-719
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    • 2002
  • Aesthetic and cosmetic dentistry is becoming a major source of the dentists practice and source of income. Patients are demanding dentists to improve and enhance their appearance and function by means of aesthetic contouring and orthodontics and are willing to pay for such services. This creates a challenge for the dental profession to gain more knowledge and skill in this important area of their practice. Ceramic and composite veneers provide a comprehensive solution to the dentition that are severely hypoplastic or deeply stained by the ingestion of tetracycline during tooth development. A large number of dental materials and new techniques are now available that will render extremely satisfactory and beautiful solutions to these previously unsightly dentitions. This presentation will present the most commonly used dental materials and techniques of fabrication of composite and porcelain veneers. Using clinical cases, the step by step cavity preparations.Impression taking, laboratory fabrication, clinical try-in and cementation materials and techniques and repairs of broken veneers as well as long term follow up will be presentedesented

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