• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권9호
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• pp.429-433
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• 2006

PZT(80/0) powder was prepared by a sol-gel method and PZT thick films were fabricated by the screen-printing method on the alumina substrates. The coating and drying procedure was repeated 4 times. And then the PZT(20/80) precusor solution was spin-coated on the PZT thick films. A concentration of a coating solution was 0.5mol/L and the number of coating was varied from 0 to 6. The porosity decreased and the grain size increased with increasing the number of coatings. The thickness of the PZT-6(6: number of coatings) films was about $60{\mu}m$. The relative dielectric constant increased and the dielectric loss decreased with increasing the number of PZT(20/80) sol coatings. The relative dielectric constant and dielectric loss of the PZT-6 thick film were 275 and 3.5%, respectively. The remanent polarization, coercive field and breakdown strength of the PZT-6 film were $19.8{\mu}C/cm^2$, 13.7kV/cm and 130kV/cm, respectively.

• 한국전기전자재료학회논문지
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• 제19권7호
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• pp.667-672
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• 2006

Ferroelectric $Pb(Zr_{0.52}Ti_{0.48})O_3$ (PZT(52/48)) thick films were fabricated by the screen-Printing method on the alumina substrates, and $PbTiO_3$ (PT) Precursor solution, which prepared by sol-gel method, was spin-coated on the PZT(52/48) thick films to obtain a densification. Its structural and electrical properties of the PZT(52/48) thick films with the treatment of PT precursor solution coating were investigated. The particle size of the thick films was increased with increasing the number of coatings and the thickness of the PZT-6 (6: number of coatings) films was about $60{\mu}m$. The relative dielectric constant increased and the dielectric loss decreased with increasing the number of PT sol coatings. The relative dielectric constant and dielectric loss of the PZT-6 thick film were 475 and 2 %, respectively. The remanent polarization, coercive field and breakdown strength of the PZT-6 film were $32.6{\mu}C/cm^2$, 15 kV/cm and 60 kV/cm, respectively.

• E2M - 전기 전자와 첨단 소재
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• 제8권4호
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• pp.458-463
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• 1995

The optical and electrical properties of $C_{22}$-Quinolinium(TCNQ) Langmuir-Blodgett films have been studied depending on the annealing temperatures. The optimal properties were investigated using UV/visible(300-800[nm]) absorption spectra and FTIR(Fourier-transformed- infrared) absorption measurements. The electrical properties were investigated in a frequency range of 10[Hz]-13[MHz]. The UV/visible absorption spectra at room temperature show that there are four characteristic peaks at 320, 380, 494 and 678[nm]. These absorption peaks decrease very rapidly above the annealing temperature of 180[.deg. C], which is due to a structural change of TCNQ. The FTIR absorption measurements strongly support the result of the UV/visible absorption spectra, because the absorption peak of TCNQ- at 2181[$cm^{-1}$ /] also decreases above 140[.deg. C]. The frequency-dependent dielectric constant shows that there is a dielectric dispersion near 1[MHz] which is due to an orientational polarization of the molecules inside the film. The overall frequency-dependent dielectric constant is higher near 80[.deg. C]. It may be due to a softness of the alkyl chains.s.

• 한국초전도ㆍ저온공학회논문지
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• 제26권1호
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• pp.14-19
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• 2024

In this study, we explore the anisotropy of electron-phonon coupling (EPC) constant in epitaxially grown MgB₂ films on c-axis oriented Al₂O₃, examining its correlation with the critical temperature (T_c) and local structural disorder assessed through polarized Raman scattering. Analysis of the polarized Raman spectra reveals angle-dependent variations in the intensity of the phonon spectra. The Raman active mode originating from the boron plane, along with two additional phonon modes from the phonon density of states (PDOS) induced by lattice distortion, was distinctly observed. Persistent impurity scattering, likely attributed to oxygen diffusion, was noted at consistent frequencies across all measurement angles. The EPC values derived from the primary Raman active phonon do not significantly vary with changing observation angles, followed by that the T_c values calculated using the Allen and Dynes formula remain relatively constant across all polarization angles. Although the E_2g phonon mode plays a crucial role in the EPC mechanism, the determination of T_c values in MgB₂ involves not only electron-E_2g coupling but also contributions from other phonon modes.

• Transactions on Electrical and Electronic Materials
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• 제6권3호
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• pp.119-123
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• 2005

$0.10Pb(Sb_{1/2}Sn_{1/2})O_3-0.25PbTiO_3-0.65PbZrO_3$ specimens doped with $ MnO_2\;(0.18\;mol\%)$ and $Y_2O_3\;(0\~0.4\;wt\%)$ were fabricated by the mixed-oxide method. All specimens showed the typical XRD patterns of a perovskite polycrystalline structure and the lattice constant decreased with increasing amount of $Y_2O_3$. The relative dielectric constant and the dielectric loss of the specimens doped with $0.2\;wt\%\;Y_2O_3$ were 704 and 0.0201, respectively. The remanent polarization, the coercive field and the pyroelectric coefficient of the specimen doped with $0.2\;wt\%\;Y_2O_3$ were $10.88\times10^{-2}Cm^{-2},\;11.12\times10^2kVm^{-1}$ and $5.03\times10^{-4}Cm^{-2}K^{-1}$ at $25^{\circ}C$, respectively. The figures of merit, $F_V$ for the voltage responsivity and $F_D$ for the specific detectivity, of the specimen doped with $0.2\;wt\%\;Y_2O_3$ were the good values of $3.04\times10^{-2}\;m^2C^{-1}\;and\;1.50\times10^{-5}\;Pa^{-1/2}$, respectively.

• Transactions on Electrical and Electronic Materials
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• 제6권5호
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• pp.210-213
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• 2005

The $BaTiO_3/SrTiO_3$ heterolayered thick films were fabricated by the screen printing method on alumina substrates. The effect of the sintering temperature on the microstructure and dielectric properties of the $BaTiO_3/SrTiO_3$ thick films has been investigated. The relative dielectric constant and dielectric loss at 1 MHz of the $BaTiO_3/SrTiO_3$ heterolayered thick films with sintering temperature of $1350^{\circ}C$ were about 751 and 1.74, respectively. The remanent polarization $(P_r)$ of the pure $(Ba_{0.5}Sr_{0.5})TiO_3$ and $BaTiO_3/SrTiO_3$ heterolayered films are approximately $5.1\;{\mu}C/cm^2$ and $10\;{\mu}C/cm^2$. This study suggests that the design of the $BaTiO_3/SrTiO_3$ heterolayered thick films capacitor with different phase should be an effective method to enhance the dielectric and ferroelectric performance in devices.

• 전자공학회논문지T
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• 제36T권3호
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• pp.7-12
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• 1999

본 논문은 (1-x-y)PMN-yPT-xST세라믹스의 유전 및 변위특성을 ST의 양에 따라 조사하였다. ST의 성분은 1∼ 6㏖%이내로 변화시켰고 과잉 MgO에 따른 조성변화에 따라 결과를 조사하였다. ST의 성분의 증가에 따라 유전상수는 5㏖%인 조성에서 최대값을 나타내었다. 큐리온도는 ST의 성분이 증가함에 따라 선형적으로 감소하였다. 항전계와 잔류분극은 l㏖%인 조성에서 최대값을 나타내었다. 과잉 MgO의 효과에 따라 유전상수는 0.8PMN-0.12PT-0.04ST조성에서 MgO를 3㏖%까지 과잉 첨가함에 따라 증가하였으나 변위특성은 감소함을 나타내었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.71-74
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• 2000

Pt/Pb$TiO_3$/$SrTiO_3$/p-Si films were prepared by metallo-organic solution deposition(M0SD) method and investigated its structure and ferroelectric properties. Crystallinity of specimen as a funtions of post annealing temperature and the thickness of $SrTiO_3$(STO) buffer layer was studied using XRD and AFM. Based on C-V and P-E curve, $PbTiO_3$(PTO) capacitors showed good ferroelectric hysteresis arising from the polarization switching properties. When the thickness of ST0 buffer layer between PTO and Si substrate was 260 nrn and the post annealing temperature was $650^{\circ}C$, it was showed that production of the pyrochlore phase due to interdiffusion of Si into FTO was prevented. The dielectric constant of FTO thin films calculated from a maximum Cma in the accumulation region was 180 and the dielectric loss was 0.30 at 100 kHz frequency. The memory window in the C-V curve is 1.6V at a gate voltage of 5V.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.51-54
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• 2003

Tb-doped lead zirconate titanate($Pb_{1.1}(Zr_{0.6}Ti_{0.4})O_3$; PZT) thin films on $Pt(111)/Ti/SiO_2/Si(100)$ substrates prepared by a sol-gel method. Films have a Zr/Ti ratio of 60:40 and perovskite phase structure. The effect on the structural and electrical properties of films measured according to Tb content. Dielectric and ferroelectric properties of PZT thin films were altered significantly by Tb-doping. The PZT thin film with higher dielectric constant and improved leakage current characteristic was obtained by adding 0.3 mol% Tb. At 100 kHz, the dielectric constant and the dielectric loss of the 0.3 mol% Tb-doped PZT thin film were 1611 and 0.24, respectively The remanent polarization(2Pr) of the 0.3 mol% Tb-doped PZT thin film was $61.4\;{\mu}C/cm^2$ and the coercive field was 61.9 kV/cm. Tb-doped PZT thin films showed improved fatigue characteristics comparing to the undoped PZT thin film.

• 한국전기전자재료학회논문지
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• 제35권6호
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• pp.610-615
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• 2022

BaTiO₃ is one of the ferroelectric materials with excellent dielectric properties such as high dielectric constant, low dielectric loss, and is widely used for the manufacturing of capacitors, piezoelectric converters, microsensors, and ferroelectric memories. Inkjet printing is a technology which uses digital and contactless methods which significantly improves flexibility associated with material and structural design, reducing manufacturing costs. Therefore, the top and bottom electrodes, BaTiO₃ ink, and photocurable resin were all printed by an inkjet to produce a BaTiO₃ capacitor. The properties of the printed thin film were analyzed. It was confirmed that the photocurable resin ink was well-infiltrated between the BaTiO₃ powder particles printed by inkjet. The dielectric properties of the capacitor such as dielectric constant which varies in accordance with frequency, polarization and tunability that changes with voltage, were measured.