• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2009년도 춘계학술대회 논문집
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• pp.97-97
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• 2009

원격 고주파 원도결합 플라즈마 증착공정을 이용하여 태양광의 반사도를 낮추고, 흡수효율을 개선할 수 있는 피라미드형 표면구조를 가지느니 투명전동성 ZnO 박막을 높은 증착속도로 증착할 수 있는 공정조건을 찾기 위하여 반응압력, $H_{2}O$/DEZn 유량비, 플라즈마 출력과 기판온도에 대하여 실험하였다. 실험결과 400$\sim$600nm/min 이상의 높은 증착속도을 얻을 수 있었으며, 넓은 공정 영역에서 안정적인 피라미드 표면 구조를 가지는 공정조건을 확보하였다. 증착된 박막의 표면구조와 물분석 결과와 공정조건과의 관계에 대한 연구 결과를 발표할 예정이다.

• 드라이브 ㆍ 컨트롤
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• 제13권1호
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• pp.27-33
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• 2016

In hydraulic machinery, the hydraulic fluid acts primarily as working fluid and secondarily as a lubricant. Hence, the viscous friction force acting on the sliding components should be reduced to improve the mechanical efficiency. It is now well known that the surface texturing is a useful method for friction reduction. In this study, using a commercial computational fluid dynamics (CFD) code, FLUENT, the lubrication characteristics of a surface textured slider bearing under high boundary pressure difference is studied. The streamlines, velocity profiles, pressure distributions, load capacity, friction force and leakage flowrate are highly affected by the film thickness ratio and the textured region. Partial texturing at the inlet region of the inclined slider bearing can reduce both friction force and leakage flowrate than in the untextured case. The present results can be used to improve the lubrication characteristics of hydraulic machinery.

• 한국재료학회지
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• 제9권11호
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• pp.1049-1054
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• 1999

근사단결정 다이아몬드막 성장시 입자의 정렬을 개선하기 위한 집합조직성장의 2단계 성장방법을 제안하였다. 메탄조성 4%, 기판온도 $850^{\circ}C$ 조건에서 (100) Si 기판에 - 200V 바이어스를 인가하여 20분동안 전처리 하였다. 처리한 기판을 2%[CH$_4$], 기판온도 $810^{\circ}C$에서 2~35시간동안 <100> 집합조직을 지니도록 1단계로 성장시켰다. 이 시편의 성장표면을 평탄화하기 위하여 (100) 면이 성장하도록 2% [CH$_4$], 기판온도 $850^{\circ}C$ 조건에서 2단계 성장시켰다. 1단계 성장시간에 따른 다이아몬드막의 배열정도를 {111} X-ray pole figure의 반가폭 변화를 통해 관찰하였다. 1단계 성장 후 입자정렬은 막의 두께가 증가할수록 개선되었다. 그러나 <100> 집합조직의 표면조직은 피라미드 형태의 굴곡을 피할 수 없었다. 2단계 성장시 (100) 면의 성장으로 인해 막의 표면은 평탄화되었으며, 이때 입자의 정렬은 1단계 성장시간에 크게 의존하였다.

• Progress in Superconductivity
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• 제8권1호
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• pp.75-80
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• 2006

[ $Yb_2O_3$ ] films were successfully deposited on a cube-textured Ni and(100) $SrTiO_3$(STO) single crystal substrates by metal organic chemical vapor deposition(MOCVD) method using $H_2O$ vapor as an oxidant. $H_2O$ vapor was used in order to avoid the oxidation of Ni substrate. The working pressure and Ar flow rate were 10 Ton and 600 sccm, respectively. $Yb_2O_3$ films on STO were formed at high temperatures above $900^{\circ}C$. While XRD peaks from $Yb_2O_3$ were hardly detected at $900^{\circ}C$, the $Yb_2O_3$(400) texture was developed fur the films grown at deposition temperatures above $950^{\circ}C$. The AEM surface roughness of $Yb_2O_3$ film, grown on STO, was in the range of $6{\sim}10nm$ for the film deposited at $950^{\circ}C$ with a $H_2O$ vapor partial pressure of 5.5 Ton and deposition times of 3 and 5 mins. For cube-textured Ni substrate, both $Yb_2O_3$(222) and $Yb_2O_3$ (400) textures were developed textures at deposition temperatures above $850^{\circ}C$.

• Journal of Magnetics
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• 제21권1호
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• pp.35-39
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• 2016

$Cr_{100-x}Ti_x$ amorphous texture-inducing layers (TIL) were investigated to realize highly (002) oriented $L1_0$ FePt-C granular films through hetero-epitaxial growth on the (002) textured bcc-$Cr_{80}Mn_{20}$ seed layer (bcc-SL). As-deposited TILs showed the amorphous phase in Ti content of $30{\leq}x(at%){\leq}75$. Particularly, films with $40{\leq}x{\leq}60$ kept the amorphous phase against the heat treatment over $600^{\circ}C$. It was found that preference of the crystallographic texture for bcc-SLs is directly affected by the structural phase of TILs. (002) crystallographic texture was realized in bcc-SLs deposited on the amorphous TILs ($40{\leq}x{\leq}70$), whereas (110) texture was formed in bcc-SLs overlying on crystalline TILs (x < 30 and x > 70). Correlation between the angular distribution of (002) crystal orientation of bcc-SL evaluated by full width at half maximum of (002) diffraction (FWHM) and a grain diameter of bcc-SL indicated that while the development of the lateral growth for bcc-SL grain reduces FWHM, crystallization of amorphous TILs hinders FWHM. $L1_0$ FePt-C granular films were fabricated under the substrate heating process over $600^{\circ}C$ with having different FWHM of bcc-SL. Hysteresis loops showed that squareness ($M_r/M_s$) of the films increased from 0.87 to 0.95 when FWHM of bcc-SL decreased from $13.7^{\circ}$ to $3.8^{\circ}$. It is suggested that the reduction of (002) FWHM affects to the overlying MgO film as well as FePt-C granular film by means of the hetero-epitaxial growth.

• 한국세라믹학회지
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• 제40권4호
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• pp.393-397
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• 2003

To investigate the effect of AIN c-axis orientation on the resonance performance of film bulk acoustic wave resonators, solidly mounted resonators with crybtallographically different AIN piezoelectric films were prepared by changing only the bottom electrode surface conditions. As increasing the degree of c-axis texturing, the effective electromechanical coupling coefficient ($\kappa$$\_$eff/)$^2$ in resonators increased gradually. The least 4 degree of full width at half maximum in an AIN(002) rocking curve, which corresponds to $\kappa$$^2$$\_$eff/ of above 5%, was measured to be necessary for band pass filter applications in wireless communication system. The longitudinal acoustic wave velocity of AIN films varied with the degree of c-axis texturing. The velocity of highly c-axis textured AIN film was extracted to be about 10200 n/s by mathematical analysis using Matlab.

• The Korean Journal of Ceramics
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• 제6권4호
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• pp.354-358
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• 2000

The SnO$_2$film was deposited on a corning glass 1737 substrate by plasma enhanced chemical vapor deposition using a gas mixture of SnCl$_4$, $O_2$, and Ar. The film thickness was measured using $\alpha$-step and was about 9400$\AA$. The conventional X-ray diffractometry and pole figure attachment were used to refine the crystal structure of SnO$_2$ thin film. Six pole figures, (200), (211), (310), (301), (321), and (411), were measured with CoK$_\alpha$ radiation in reflection geometry. The X-ray diffraction data were measured at room temperature using CuK$_\alpha$ radiation with graphite monochromator. The agreement between calculated and observed patterns for the normal direction of SnO$_2$ thin film was not satisfactory due to the severely preferred orientation effect. The Rietveld refinement of heavily textured SnO$_2$ thin film was successfully achieved by adopting the pole density distribution of each reflection obtained from the inverse pole figure as a correction factor for the preferred orientation effect. The R-weighted pattern, R$_wp$, was 15.30%.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 추계학술대회 논문집 학회본부
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• pp.688-691
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• 1997

Good quality superconducting $YBa_2Cu_30_{7-{\delta}}$(YBCO) thin films were grown on Hastelloy (Ni-Cr-Mo alloys) with yttria-stabilized zirconia(YSZ) buffer layers by in situ pulsed laser deposition in a multi-target processing chamber. Generally, Hastelloy exhibits excellent resistance to corrosion, fatigue, thermal shock, impact, and erosion. However, it is difficult to make films on flexible metallic substrates due to interdiffusion problems between metallic substrates and superconducting overlayers. To overcome this difficulty, it is necessary to use YSZ buffer layer since it will not only limit the interdiffusion process but also minimize the surface microcrack formation due to smaller mismatch between the film and the substrate. In order to enhance the crystallinity of YBCO films on metallic substrates, YSZ buffer layers were grown at various temperatures different from the deposition temperature of YBCO films. On YSZ buffer layer grown at higher temperature than that for depositing YBCO film, the YBCO thin film was found to be textured with c-axis orientation by x-ray diffraction and had a zero-resistance critical temperature of about 85K.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.243.2-243.2
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• 2016

Tungsten (W) is recently gaining attention as a potential candidate to replace Cu in semiconductor metallization due to its expected improvement in material reliability and reduced resistivity size effect. In this study, the impact of electron scattering at grain boundaries in a polycrystalline W thin film was investigated. Two nominally 300 nm-thick films, a (110)-oriented single crystal film and a (110)-textured polycrystalline W film, were prepared onto (11-20) Al2O3 substrate and thermally oxidized Si substrate, respectively in identical fabrication conditions. The lateral grain size for the polycrystalline film was determined to be $119{\pm}7nm$ by TEM-based orientation mapping technique. The film thickness was chosen to significantly exceed the electron mean free path in W (16.1 and 77.7 nm at 293 and 4.2 K, respectively), which allows the impact of surface scattering on film resistivity to be negligible. Then, the difference in the resistivity of the two films can be attributed to grain boundary scattering. quantitative analyses were performed by employing the Mayadas-Shatzkes (MS) model, where the grain boundary reflection coefficient was determined to be $0.42{\pm}0.02$ and $0.40{\pm}0.02$ at 293 K and 4.2 K, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.454-454
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• 2010

In order to achieve a high efficient a-Si solar cell, the TCO (transparent conductive oxide) substrates are required to be a low sheet resistivity, a high transparency, and a textured surface with light trapping effect. Recently, a zinc oxide (ZnO) thin film attracts our attention as new coating material having a good transparent and conductive for TCO of solar cells. In this paper the optical properties of $H_2$ post-treated BZO (boron doped ZnO, ZnO:B) thin film are investigated with $O_2$-plasma treatment. The BZO thin films by MOCVD (Metal Organic Chemical Vapor Deposition) are investigated and the samples of $H_2$ post-treated BZO thin film are tested with $O_2$-plasma treatment by plasma treatment system with 13.56 MHz as RIE (Reactive Ion Etching) type. We measured the optical properties and surface morphology of BZO thin film with and without $O_2$-plasma treatment. The optical properties such as transmittance, reflectance and haze are measured with integrating sphere and ellipsometer. This result of the BZO thin film with and without $O_2$-plasma treatment is application to the TCO for solar cells.