• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1155-1156
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• 2006

Hopkinson bar dynamic test under strain rates ranging from 2000 $s^{-1}$ to 8000 $s^{-1}$ at room temperature revealed that the flow stress of tungsten heavy alloys depended strongly on the strain, strain rate, and the content of molybdenum. The variation of flow stress was caused by the competition between work hardening and heat softening in the materials at different strain rates. The high temperature strength of the matrix phase was increased by the addition of molybdenum, which enhanced the strength of the tungsten heavy alloys in high strain rate test.

• Progress in Superconductivity and Cryogenics
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• v.21 no.4
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• pp.34-38
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• 2019

Multilayered high-temperature superconductor coated conductor (CC) tapes are used in an extensive range of applications and are exposed to many stresses such as hoop stress, radial/transverse tensile stress under large Lorentz forces, and thermal stress while cooling if thermal expansion properties differ. Loads induced transversely at the tape surface inevitably create delamination phenomena in the multilayered CC tapes. Thus, delamination behaviors of CC tapes along the c-axis under transverse loading conditions, which can vary based on manufacturing process and constituent layers, must be characterized for applications. The anvil test method was used to mechanically investigate the delamination characteristics of various commercially available Ag-stabilized CC tapes at room temperature and 77 K, finding superior strength at the latter. The wide variations found depended on tape structure and fabrication technique. Fractographic morphologies of delaminated tapes supported the findings under transverse loading conditions.

• Biotechnology and Bioprocess Engineering:BBE
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• v.8 no.3
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• pp.179-182
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• 2003

Anaerobic fermentation was attempted to produce methane from the wood chip (Eucalyptus globulus). By the pretreatment of the wood chip using hot water with high temperature, NaOH, and steam explosion, the production of methane gas was enhanced. The pretreatment using Steam explosion resulted in more amount of methane gas produced than the treatment using either hot water or 1% (w/w) NaOH with high temperature, and the steam explosion at a steam pressure of 25 atm and a steaming time of 3 min was the most effective for the methane production. The amount of methane gas produced depended on the ratio of weight of Klason lignin, a high molecular weight lignin, in the treated wood chip.

• Corrosion Science and Technology
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• v.2 no.2
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• pp.93-97
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• 2003

Fatigue crack growth test or low alloy steel was performed in high temperature water. Test parameters were dissolved oxygen content. loading frequency and R-ratio ($P_{min}/P_{max}$). Since the sulfur content or the steel was low, there were no environmentally assisted cracks (EAC) in low dissolved oxygen(DO) water. At high DO, the crack growth rate at R = 0.5 tests was much increased due to environmental effects and the crack growth rate depended on loading frequency and maximized at a critical frequency. On the other hand, R = 0.7 test results showed an anomalous decrease of the crack growth rate as much different behavior from the R = 0.5. The main reason of the decrease may be related to the crack tip closure effect. All the data could be qualitatively understood by effects of oxide rupture and anion activity at crack tip.

• Journal of the Korean Ceramic Society
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• v.31 no.4
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• pp.381-388
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• 1994

A new process which co-fires the low-firing-substrate and copper conductor was studied to achieve good bond strength and low sheet resistance of conductor. Cupric oxide is used as the precursor of conductive material in the new method and the firing atmosphere of the new process is changed sequently in air H2N2. The addition of cupric oxide and variations of firing atmosphere permited complete binder-burnout in comparison with the conventional method and contributed to the improvement of resistance and bonding behaviors. The potimum conditions of this experiment to obtain the satisfactory resistance and bond strength are as follows (binder-burnout temperature in air; 55$0^{\circ}C$, reducing temperature in H2; 40$0^{\circ}C$ for 30 min, ratio of copper and cupric oxide; 60:40~30:70 wt%). The bonding mechanism between the substrate and metal was explained by metal diffusion layer in the interface and the bond strength mainly depended on the stress caused by the difference of shrinkage and thermal expansion coefficient between the substrate and metal.

• The Korean Journal of Ceramics
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• v.2 no.2
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• pp.83-88
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• 1996

Long term stability, sensitization in air, and gas sensing behaviors of tin oxide films were investigated with doping of antimony and palladium. The tin oxide films were prepared on a Corning glass by reactive rf sputtering method and tested for detection of hydrogen gas. Sb-doping improved a long-term stability in the base resistance of $SnO_2$ film sensor. A small amount of Pd doping caused the optimum sensor operating temperature to reduce and also enhanced the gas sensitivity, compared with the undoped $SnO_2$ film. Gas sensitivity depended largely on the film thickness. The important sensitization reactions for sensor operating were $(O_{2ads})+e^-\;{\rightarrow}\;2(O_{ads})^-$ on the surface of $SnO_2$ film at elevated temperature in air and a followed reaction of hydrogen atoms with $(O_{ads})^-$ ions.

• 한국기계연구소 소보
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• s.20
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• pp.57-63
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• 1990

The morphologies of MC carbides (M stands for metal) and creep-rupture properties in directionally solidified Rene 80 having standard and Hf-modified chemistries were studied. It was found that Hf depressed the melting point, $\gamma$- $\gamma$’ eutectic temperature and $\gamma$’ solvus of nickel-base superalloy Rene 80, but did not depress MC carbide forming temperature. The morphologies of MC carbides depended upon solidification sequence, which led to blocky type in the early stage and script type in the late stage of solidification. Creep failure occurs through the crack initiation at the transverse components of longitudinal grain boundaries or interdendritic carbides in directionally solidified superalloys. It could be concluded MC carbide morphologies played an important role in creep properties of DS superalloys, that is, Hf additions increased the creep ductilities and lives of Rene 80.

• Electrical & Electronic Materials
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• v.9 no.1
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• pp.44-50
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• 1996

In this study, Selenium device was fabricated by vacuum evaporation method with the substrate temperature at room temperature and its electrical and optical properties were investigated to be used in optical device. The film properties largely depended on the transmittance and annealing time, and improved with aging owing to stress release. We found that the photocurrent of the films increase linearly with light illumination. As a result, Selenium device made by this method yielded a short circuit current density of 10.5mA/$\textrm{cm}^2$, an open circuit voltage of 39OmV.

• Journal of the Korean Society for Heat Treatment
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• v.6 no.3
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• pp.159-165
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• 1993

Creep tests of the TiC particulate reinforced Al composite have been conducted in the temperature ranges from 200 to $500^{\circ}C$. The steady-state cree rate of the composite depended strongly on the temperature and ap' plied stress. The stress exponent for the steady state creep rate of the composites was approximately 17.5 and the activation anergy was calculated to be 390KJ/mol. The steady-state creep equation could be written as $\acute{\varepsilon}_{ss}$ $$(s^{-1})=1.5{\times}10^{-9}\;{\sigma}^{17.5}\exp(-390000/RT)$$. Fracture surface examination showed that the fracture mode of the particulate reinforced composite was ductile by plastic tearing of the aluminum matrix and TiC particle interfaces were offered as sites for crack.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.235-238
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• 1999

Silicon dioxide films were prepared by anodizing silicon wafers in an ethylene $glycol+HNO_3(0.04{\;}N)$ at 20 to $70^{\circ}C$. The voltage between silicon anode and platinum cathode was measured during this process. Under the constant current electrolysis, the voltage increased with oxide film growth. The transition time at which the voltage reached the predetermined value depended on the temperature of the electrolyte. After the time of electrolysis reached the transition time, the anodization was changed the constant voltage mode. The depth profile of oxide film/Si substrate was confirmed by XPS analysis to study the influence of the electrolyte temperature on the anodization. Usually, the oxide-silicon peaks disappear in the silicon substrate, however, this peak was not small at $45^{\circ}C$ in this region.