• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.2
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• pp.99-103
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• 2001

We present a detailed of the interband transitions of InAs/GaAs self-organized quantum dots(QDs) based on surface photovoltage(SPV), photoreflactance(PR) and photoluminescence(PL) spectroscopies. At room temperature, interband absorption transitions of QDs have been observed by using SPV spectrum, which clearly exhibits three well-resolved absorption transitions of QDs have been observed by using SPV spectrum, which clearly exhibits three well-resolved absorption peaks. The absorption line shape is Gaussian-like. Furthermore, the corresponding interband transitions are also observed in PR and PL experiments at 77K.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.150-154
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• 1998

Photoluminescence(PL), XRD, TEM results $5\times1016/\textrm{cm}^2, 1\times10^{17}/\textrm{cm}^2, 3\times10^{17}/\textrm{cm}^2$ Si-implanted $SiO_2$ films on crystalline silicon are reported. At low dose implantation and low annealing temperature, visible PL are observed. The PL spectrum has 7400$\AA$ and 8360$\AA$ peaks. As annealing time increased, the PL intensity are increased and peak positions are changed. The PL spectrum are not observed at high dose implantation and high annealing temperature. For the samples of low dose and high annealing temperature, visible PL are observed at short annealing time (30 minutes) and disappear for more than 1 hour annealing. From XRD and TEM results, silicon cluster are related to nonradiative defects. It is concluded that the origin of visible PL in Si implanted SiO2 films are not nanocrystal but two kinds of radiative defects. The Si-O-O bonding related defects (O rich defects) and Si-Si-O bonding related defects (Si rich defects) are related to the PL spectrum and depend on concentraion of Si implantation, annealing temperature and time.

• Journal of the Korean Ceramic Society
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• v.45 no.8
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• pp.477-481
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• 2008

$Eu^{2+}$ and $Dy^{3+}$ co-doped strontium aluminate, $SrAl_2O_4$ long phosphorescent phoshor was fabricated and its photoluminescence was characterized. The phosphor, $SrAl_2O_4:Eu^{2+},Dy^{3+}$ was synthesized by a coprecipitation in which metal salts of $Sr(NO_3)_2$, $Al(NO_3)_3{\cdot}9H_2O$, were dissolved in $(NH_4)_2CO_3$ solution with adding $Eu(NO_3)_3{\cdot}5H_2O$ and $Dy(NO_3)_3{\cdot}5H_2O$ as a activator and co-activator, respectively. The coprecipitated products were separated from solution, washed, and dried in a vacuum dry oven. The dried powders were then mixed with 3 wt% $B_2O_3$ as a flux and heated at $800{\sim}1400^{\circ}C$ for 3 h under the reducing ambient atmosphere of 95%Ar+$5%H_2$ gases. For the synthesized $SrAl_2O_4:Eu^{2+},Dy^{3+}$, properties of photoluminescence such as emission, excitation and decay time were examined. The emission intensity increased as the annealing temperature increased and showed a maximum peak intensity at 510 nm with a broad band from $400{\sim}650\;nm$. Monitored at 520 nm, the excitation spectrum showed a maximum peak intensity at $315{\sim}320\;nm$ wavelength with a broad band from $200{\sim}500\;nm$ wavelength. The decay time of $SrAl_2O_4:Eu^{2+},Dy^{3+}$ increased as the annealing temperature increased.

• Journal of the Optical Society of Korea
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• v.11 no.3
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• pp.138-141
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• 2007

We suggest that supercontinuum can be used for absorption spectroscopy to observe the exciton levels of a semiconductor nano-structure. Exciton absorption spectrum of a GaAs/AlGaAs quantum well was observed using supercontinuum generated by a microstructrured fiber pumped by a femtosecond (fs) pulsed laser. Significantly narrower peaks were observed in the absorption spectrum from 11 K up to room temperature than photoluminescence (PL) spectrum peaks. Because supercontinuum is coherent light and can readily provide high enough intensity, this method can provide a coherent ultra-broad band light source to identify exciton levels in semiconductors, and be applicable to coherent nonlinear spectroscopy such as electromagnetically induced transparency (EIT), lasing without inversion (LWI) and coherent photon control in semiconductor quantum structures.

• Journal of the Korean Ceramic Society
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• v.42 no.7 s.278
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• pp.521-524
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• 2005

ZnO 2-D nanowall structure with around 100 nm thickness, which is composed of tens of nm scale ZnO single crystals, was fabricated through the low temperature chemical solution growth method. Electro Chemical Deposition (ECD) technique was applied to attach the ZnO seed crystals on ITO coated glass substrate. The ZnO nanowall structure was grown in the 0.015 mol$\%$ of aqueous solution of zinc nitrate and hexamethenamine at 60$^{\circ}C$ for 20 - 40 h. The nanowall structure depends on the ECD condition or the applied voltage and duration time. The nanowall shows a photoluminescence around 550 - 700 nm spectrum range.

• Rapid Communication in Photoscience
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• v.4 no.2
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• pp.34-36
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• 2015

New spectroscopic characteristics of amorphous ferric hydroxide ($Fe(OH)_3$), interestingly in the near infrared (NIR) region, are presented in this study. The absorption spectrum of ferric hydroxide covers wide spectral regions from ultraviolet to NIR (200~900 nm). Unique emission bands were newly observed in the NIR regions (800~1400 nm). Several bands of this NIR emission are quiet well overlapped with the combinational vibrational absorption bands of water. From photothermal conversion study, very interestingly, temperature of aqueous mixture solution including the amorphous ferric hydroxide was significantly increased from ambient temperature to $38^{\circ}C$ for 30 minutes under irradiation of a standard helium lamp.

• Bulletin of the Korean Chemical Society
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• v.23 no.8
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• pp.1111-1115
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• 2002

The photoluminescence of calixarene crystals has been studied as functions of temperature, time, and concentration. The vibronic bands shift to longer wavelength and become significantly sharper as temperature decreases. The experimental results r eveal that the structural transformation occur during the annealing process. Time-resolved spectra of calixarene at 12 K are monitored. Spectral features, which demonstrate characteristic of energy transfer processes, are not observed. The depopulation of excited state density is mainly controlled by unimolecular decay process dominating other decay processes. The lifetime was found to be 2.6 $\pm$ 0.1 ns. For the case of calixarene mixed with naphthalene, the fluorescence spectrum shows that the band centered at 340 nm lies 2840 $cm^{-1}$ below the relatively broad 310 nm band found for calixarene crystals. The spectra also exhibit that the emission intensity increases with increasing calixarene concentration. The results are evident that the calixarene emission is quenched by the naphthalene. Phosphorescence of calixarene mixed with naphthalene crystals is observed to determine whether the emission is due to naphthalene. The phosphorescence peaks were compared with the ground-state vibrational frequencies of naphthalene and found to be in good agreement. The results indicate that inter-molecular energy transfer occurs between calixarene and naphthalene.

• Bulletin of the Korean Chemical Society
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• v.14 no.6
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• pp.700-704
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• 1993

The photocatalytic alanine and hydrogen production reaction were studied by using CdS as a semiconductor photocatalysts. The rate of alanine and hydrogen production depends strongly on the temperature in heat treatment of CdS powder. In particular, the rate of alanine production, which was observed using Pt/CdS(A)-(CdS from Mitsuwa), was increased about six times than that of using Pt/CdS(B)-(CdS from Furruchi) under the same heat treatment condition at 500$^{\circ}$C. And the photocatalytic activity for alanine production using bare CdS(A) or Pt/CdS(A) was almost same with increasing temperature in heat treatment in the range of 100-600$^{\circ}$C. From X-ray diffraction data and photoluminescence spectrum, we conclude that the crystal structure changes of CdS(A) or strong interaction at interface of Pt and CdS contribute to increasing the rate of alanine and hydrogen production reaction.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.78-82
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• 2021

The Ga₂O₃ single crystal was grown through a floating zone method, and its structural and optical properties were instigated. It has a monoclinic crystal structure with a (100) crystal orientation and an optical band gap energy of 4.6 eV. It showed an average transmittance of 70% in the visible region. At room temperature, its photoluminescent spectrum showed three different peaks: the ultraviolet at 360 nm, the blue-green at 500 nm, and the red peaks at 700 nm. Especially, at liquid nitrogen temperature, the ultraviolet peak was optically active while the others were quenched.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.84-84
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• 2003

The ZnSe epilayers were grown on the GaAs substrate by hot wall epitaxy. After the ZnSe epilayers treated in the vacuum-, Zn-, and Se-atmosphere, respectively, the defects of the epilayer were investigated by means of the low-temperature photoluminescence measurement. The dominant peaks at 2.7988 eV and 2.7937 eV obtained from the PL spectrum of the as-grown ZnSe epilayer were found to be consistent with the upper and the lower polariton peak of the exciton, I$_2$ (D$^{\circ}$, X), bounded to the neutral donor associated with the Se-vacancy. This donor-impurity binding energy was calculated to be 25.3meV The exciton peak, lid, at 2.7812 eV was confirmed to be bound to the neutral acceptor corresponded with the Zn-vacancy. The I$_1$$\^$d/ peak was dominantly observed in the ZnSe/GaAs:Se epilayer treated in the Se-atmosphere. This Se-atmosphere treatment may convert the ZnSe/GaAs:Se epilayer into the p-type. The SA peak was found to be related to a complex donor like a (V$\sub$se/ - V$\sub$zn/) - V$\sub$zn-/