• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.176-180
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• 2001

There are several factors causing re-work in CMP process such as improper polish time calculation by operator. removal rate decline of the polisher, unstable in-suit pad conditioning, slurry supply module problem and wafer carrier rotation inconsistancy. And conclusively those fundimental reason for the re-work rate increasement is mainly from the cycle time delay between wafer polish and post measurement. Therefore, Wafer thickness measurement in wet condition could be able to remove those improper process conditions which may happen during the process in comparison with the conventional dried wafer measurement system and it can be able to reduce the CMP process cycle time. CMP scrap reduction by overpolish, re-work rate reduction, thickness control efficiency also can be easily achieved. CMP Equipment manufacturer also trying to develop integrated system which has multi-head & platen, cleaner, pre & post thickness measure and even control the polish time from the calculated removal rate of each polishing head by software. CMP re-work problem such as over & under polish by target thickness may result in the cycle time delay. By reducing those inefficient factors during the process and establish of the automatic process control, CLC system need to be adopted to maximize the process performance. Wafer to Wafer Polish Time Feed Back Control by measuring the wafer right after the polish shorten the polish time calculation for the next wafer and it lead to the perfact Post CMP target thickness control capability. By Monitoring all of the processed the wafer, CMP process will also be stabilize itself.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.176-180
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• 2001

There are several factors causing re-work in CMP process such as improper polish time calculation by operator, removal rate decline of the polisher, unstable in-suit pad conditioning, slurry supply module problem and wafer carrier rotation inconsistency. And conclusively those fundimental reason for the re-work rate increasement is mainly from the cycle time delay between wafer polish and post measurement. Therefore, Wafer thickness measurement in wet condition could be able to remove those improper process conditions which may happen during the process in comparison with the conventional dried wafer measurement system and it can be able to reduce the CMP process cycle time. CMP scrap reduction by overpolish, re-work rate reduction, thickness control efficiency also can be easily achieved. CMP Equipment manufacturer also trying to develop integrated system which has multi-head & platen, cleaner, pre & post thickness measure and even control the polish time from the calculated removal rate of each polishing head by software. CMP re-work problem such as over & under polish by target thickness may result in the cycle time delay. By reducing those inefficient factors during the process and establish of the automatic process control, CLC system need to be adopted to maximize the process performance. Wafer to Wafer Polish Time Feed Back Control by measuring the wafer right after the polish shorten the polish time calculation for the next wafer and it lead to the perfect Post CMP target thickness control capability. By Monitoring all of the processed the wafer, CMP process will also be stabilize itself.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.3
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• pp.142-148
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• 2006

The resonances that contain the information on the properties of the scattering target can be used for target reconstruction approaches. The inverse scattering theory for the resonances has been applied to the problems of the scattering for a spherical, cylindrical dielectric objects and dielectrically coated conductors, shown reasonable results. Though by using this method the thickness and the dielectric constants of the target can be obtained from a determination of the spacing and of the widths of the scattering resonances, the radius of the target should be given. In this paper, we suggest the improved inverse theory combined with the resonance scattering theory to obtain the radius in addition to the dielectric constant of the target. The applications of this method for scattering problems of electromagnetic waves from cylindrical targets were accomplished, and it shows its validity.

• Tribology and Lubricants
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• v.24 no.6
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• pp.326-331
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• 2008

The contact surfaces between mold and target should be in parallel for a proper imprinting process. However, large size of contacting area makes it difficult for both mating surfaces (mold and target planes) to be in all uniform contact with the expected precision level in terms of thickness and position. This is caused by the waviness of mold and target although it is very small relative to the area scale. The gripping force for both mold and target by the vacuum chuck is other major effect to interrupt the uniform contact, which must be avoided in imprinting mechanism. In this study, the cause of non-conformal contact mechanism between mold and target is investigated with the consideration of deformation due to the vacuum gripping for the size $470{\times}370\;mm^2$ LCD panel.

• Transactions of Materials Processing
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• v.18 no.4
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• pp.290-295
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• 2009

The roll gap set-up in the finishing mill is one of the most important technologies in the hot plate rolling process. As the target thickness can be obtained by the correct set-up of the roll gap, improving the roll gap set-up technology is very critical for plate thickness accuracy. The main cause of thickness variation in hot plate mills is the non-uniform temperature distribution along the length of the slab. The objective of this study is to adjust the roll gap set-up for the thickness accuracy of plate in hot rolling process considering top-end temperature drop. Therefore this study has concentrated on determining the correct amounts of thickness variation according to top-end temperature drop and roll gap to compensate thickness variation. The control method of roll gap set-up which can improve the thickness accuracy was proposed. The off-line simulation of compensated roll gap significantly decreases top-end thickness variation.

• Proceedings of the KSME Conference
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• 2001.06d
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• pp.654-659
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• 2001

A new non-contact method of the frost thickness measurement has been developed. The method is based on the digital image processing technique to identify the reflection edge of the image captured by a CCD camera under laser sheet light illumination. To insure the accuracy of frost layer thickness, an in-situ calibration procedure is carried out with a calibration target with 0.5mm holes. Using the mapping function obtained by the calibration procedure, the contour of frost surface can be estimated with sub-pixel resolutions. The developed method is applied to study the effect of cooling plate temperature on the frost thickness in a small low speed wind tunnel.

• Journal of the Semiconductor & Display Technology
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• v.19 no.1
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• pp.17-22
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• 2020

Recently, the decrease in thin film thickness has been actively studied by changing several physical elements such as the increase in revolution velocity of lower substrate equipped with AC or DC motor. In this paper, we propose a novel spin coater control system that changes AC or DC motor and common use software with limitation of velocity and position control into step motor and LABVIEW software based on GUI to control revolution velocity and position more precisely. By determining six input values of rotation velocity 1, 5, 10, 25, 50, 100 PPS, we fabricated six samples using coating target, TA(tantalum) on silicon substrate and measured their thin film thickness by SEM. Hence, this research can be applied to inferring thin film thickness of tantalum regarding any value of revolution velocity without additional experiments and for linear reference model via property analysis of thin film thickness using other thin-film materials.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.207-210
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• 2007

We prepared Al doped ZnO/Ag/Al doped ZnO on the polymer substrate by Facing Target Sputtering (FTS). FTS featured Facing Target Sputtering featured that deposition is stable at the low pressure, it has high plasma density and suppresses the substrate damage from energetic particles. We fixed to 50nm up and down thickness of AZO layer, respectively and that of intermediate Ag layer was adjusted with deposition time. In the result, AZO/Ag/AZO multilayer thin films have much better electrical conductivity than AZO single layer thin film. As increasing the thickness of Ag layer, the transmittance decreased.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.4
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• pp.646-651
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• 1987

The photoconductive multilayer composed of glassy, porous, and fine-grained layers was fabdricated with Se and Sb2S3 by vacuum evaporation in order to be used as vidicon target. And its electrical, optical properties were investigatee. The fabrication conditions were as follow: the glassy layer was first deposited to have the thickness of 6500 \ulcornerat the deposition rate of 250\ulcornersec. High photosensitivity(\ulcorner=1) was obtained but its shortcoming was high dielectric constant. Therefore, the porous layer was added to lower dielectric constant and had 7500\ulcornerthick in the argon gas ambikent of 7x10-\ulcorner And the fine-grained layer was formed to prevent secondary electron emission and obtain good resolution. Its thickness was about 1700\ulcorner For the given vidicon target, the light transfer characteristic, that is, photosensitivity (\ulcorner) was measured to be 0.8 at the applied voltage of 25V. The spectral sensitivity was quite similar to that of the human eyes.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.316-316
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• 2014

Two different transparent conducting oxide (TCO) layers of Al-doped ZnO (AZO) and $WO_3$ were prepared by a rf sputtering process. Working pressure, deposition time, and target-to-substrate distance were varied for the sputtering process to improve electrical properties of the resulting layer. Thickness of the TCO layers was measured by a profile meter of ${\alpha}$-step. To evaluate the electrical conductivity, surface resistivity of the TCO layers was measured by a four-point probe technique. Decrease of the working pressure resulted in increase of deposition rate and decrease of surface resistivity of the resulting layer. Increase of the layer thickness due to increased deposition time resulted in decrease of surface resistivity of the resulting layer. The shorter the target-to-substrate distance was, the lower was the surface resistivity of the resulting layer.