• Proceedings of the Korean Magnestics Society Conference
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• 2000.05a
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• pp.150-151
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• 2000

• Journal of Magnetics
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• v.7 no.2
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• pp.55-58
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• 2002

MR transfer behaviors of the permanent magnet biased spin valve MR sensors with SyAF (synthetic antiferromagnet) layers were studied by micromagnetics modeling. For narrow track MR heads, various height to width ratios were considered together with strength of permanent magnets which stabilities the free layed As the MR sensor width is reduced to $0.12 \mu{m}$, sensor height less than 0.09 ${\mu}{\textrm}{m}$ is needed to show good linearity and the Mr.t of permanent magnets smaller than 0.2 memu/$cm^2$ is sufficient for the domain stabilization. The conditions for single domain behavior of the free layer were also investigated through optimizing the biasing strength of permanent magneto the shield gap and the aspect ratio of MR sensor.

• Journal of Magnetics
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• v.7 no.4
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• pp.147-150
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• 2002

The pinning direction, the spin flop behaviors and the magnetoresistive properties in top synthetic spin valve structure [NiFe/CoFe/Cu/CoFe (t$_{p2}$)/Ru/CoFe (t$_{p1}$)/IrMn] were investigated. The magnetoresistive and pinning characteristics of synthetic spin valves strongly depended on the differences in the two pinning layer thickness, ${\Delta}t(=t_{p2}-t_{p1})$. In contrast to the conventional spin valves, the pinning direction (P1) was canted off with respect to the growth field axis with ${\Delta}t$. We found that the canting angle ${\Phi}$ had different values according to the annealing field direction and ${\Delta}t$. When the samples were annealed at above the blocking temperature of IrMn with zero fields, the canted pinned layer could be set along the growth field axis. Because the easy axis which was induced by the growth field during deposition is still active in all ferromagnetic layers except the IrMn at $250{^{\circ}C}$, the pinning direction could be aligned along the growth field axis, even in 0 field annealing.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.64-65
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• 2002

Recently the synthetic antiferromagnetic layer (SAF) has received much attention because it replaces the pinned layer of the conventional spin valve (CSV) sensors and its overall performance [1], The spin valve (SV) with SAF has the from buffer/F/Cu/APl/Ru/AP2/AF, where F is the soft ferromagnetic layer (typically NiFe with CoFe interfacial doping), AP1 and AP2 are two ferromagnetic layers (typically CoFe alloys) antiferromagnetically coupled through a thin Ru layer. (omitted)

• Proceedings of the Korean Magnestics Society Conference
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• 2000.05a
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• pp.104-105
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• 2000

• Proceedings of the Korean Magnestics Society Conference
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• 2000.05a
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• pp.100-101
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• 2000

• Journal of the Korean Magnetics Society
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• v.11 no.5
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• pp.211-216
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• 2001

Top synthetic spin valves wi th structure Ta/NiFe/CoFe/Cu/CoFe(Pl)/Ru/CoFe(P2)/FeMn/Ta on Si (100) substrate with SiO$_2$ of 1500 were prepared by dc magnetron sputtering system. We have changed only the thickness of the free layer and the thickness difference (Pl-P2) in the two ferromagnetic layers separated by Ru, and investigated the effect of magnetic film thickness on the GMR properties and the interlayer coupling field in a spin valve with a synthetic antiferromagnet. As thickness difference of pinned layer was decreased from +25 to -25 , MR ratio was decreased gradually. However, there was a dip zone indicating a big change of MR ratio around Pl = P2, which can be due to the large canting of pinned layers. The modified Neel model was suggested for the top synthetic spin valve to explain the interlayer coupling field according to the thickness change of ferromagnetic layers. The interlayer coupling field was decreased due to the magnetostatic coupling (orange peel coupling) as suggested by model. However, the interlayer coupling field was not explained at the dip zone by the modified Neel model. The deviation of modified Neel model at the dip zone could be due to the largely canting of the pinned layers as well, which depends on different thickness in synthetic antiferromagnetic structure.

• Journal of the Korean Magnetics Society
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• v.11 no.6
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• pp.272-277
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• 2001

A spin valve structure of Ta/NiFe/CoFe/Cu/CoFe/Ru/CoFe/FeMn/Ta which has a synthetic antiferromagnet (CoFe/Ru/CoFe), was fabricated by using a magnetron sputtering system. The thickness and composition of magnetic free and pinned layers affect the magnetic properties such as exchange interaction strength of each layer and so on. Even though Rutherford Backscattering Spectrometry (RBS) has advantages of quantitative and non-destructive analysis, it is almost impossible to determine the thickness and composition of magnetic thin films using lBS because of its poor mass resolution for a higher atom number (Z>20). In this study, quantitative analysis of the element composition and thickness for the spin valve sample was performed by combining both Proton Induced X-ray Emission Spectrometry (PIXE), which is one of element specific analysis techniques, and grazing-exit RBS with a highly improved depth resolution and absolute quantitative analysis. For the quantitative analysis, standardization of PIXE was carried out with NiFe, CoFe, and FeMn layers, which are one of constituent layers of spin valve films. Through PIXE standardization and the aid of PHE experimental results of the spin valve sample, ire overlapped signal in a grazing-exit RBS spectrum were successfully resolved and the thickness of the Ru layer was determined with a resolution of ∼1 .

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.185-186
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• 2000

• Proceedings of the Korean Magnestics Society Conference
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• 1999.10a
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• pp.98-99
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• 1999