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Je, J.H.;Noh, D.Y.
- Journal of the Korean institute of surface engineering
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- v.29 no.5
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- pp.399-406
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- 1996
The orientational cross-over phenomena in an RF sputtering growth of TiN films were studied in an in-situ, real-time synchrotron x-ray scattering experiment. For the films grown with pure Ar sputtering gas, the cross-over from the more strained (002)-oriented grains to the less strained (111)-oriented grains occurred as the film thickness was increased. As the sputtering power was increased, the cross-over thickness, at which the growth orientation changes from the <002> to the <111> direction, was decreased. The addition of $N_2$ besides Ar as sputtering gas suppressed the cross-over, and consequently resulted in the (002) preferred orientation without exhibiting the cross-over. We attribute the observed cross-over phenomena to the competition between the surface and the strain energy. The x-ray powder diffraction, the x-ray reflectivity, and the ex-situ AFM surface topology study consistently suggest that the microscopic growth front was in fact always the (002) planes. In the initial stage of growth, the (002) planes were aligned to the substrate surface to minimize the surface energy. At later stages, however, the (002) growth front tilted away from the surface by about $60^{\circ}$ to relax the strain, which caused the cross-over of the preferred growth direction to the <111> direction.
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조태식
- Journal of the Korean Institute of Electrical and Electronic Material Engineers
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- v.15 no.8
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- pp.708-712
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- 2002
The crystallization of amorphous $\alpha$-Fe$_2$O$_3$/$\alpha$-AI$_2$O$_3$(0001) thin films during thermal annealing in air has been studied using real-time synchrotron x-ray scattering. The well aligned (0.02$^{\circ}$/ FWHM) $\alpha$-Fe$_2$O$_3$and Fe$_3$O$_4$interfacial crystallites (50- -thick) coexist on the $\alpha$-AI$_2$O$_3$(0001) in the sputter-grown amorphous films at room temperature. The amorphous precursor is crystallized to the epitaxial $\alpha$-Fe$_2$O$_3$grains in three steps with annealing temperature; i ) the growth of the well aligned $\alpha$-Fe$_2$O$_3$interfacial crystallites, together with the transformation of the Fe$_3$O$_4$crystallites to the $\alpha$-Fe$_2$O$_3$ crystallites, ii ) the growth of the less aligned (3.08$^{\circ}$ FWHM)$\alpha$-Fe$_2$O$_3$grains on the well aligned grains (＞40$0^{\circ}C$), and iii) the nucleation of the other less aligned (1.39$^{\circ}$ FWHM) $\alpha$-Fe$_2$O$_3$grains directly on the $\alpha$-AI$_2$O$_3$substrate (＞$600^{\circ}C$). The effective thickness thinner than 230 may be very useful for enhancing the epitaxial quality of $\alpha$-Fe$_2$O$_3$/AI$_2$O$_3$(0001) thin films.
https://doi.org/10.4313/JKEM.2002.15.8.708 인용 PDF KSCI

조태식
- Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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- 2001.07a
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- pp.1036-1038
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- 2001
The sapphire orientation dependence of the crystallization of ZnO thin films has been studied using real-time synchrotron x-ray scattering. The amorphous ZnO thin films with a 2400-${\AA}$-thick were grown on sapphire(110) and sapphire(001) substrates by radio frequency magnetron sputtering at room temperature. The amorphous ZnO films were crystallization into epitaxial ZnO(002) grains both on the sapphire(110) and on the sapphire(001) substrates. The epitaxial quality, such as mosaic distribution and crystal domain size, of the ZnO grains on the sapphire(110) is high, similar to that of the ZnO grains on the sapphire(001). With increasing the annealing temperature to 600$^{\circ}C$, the mosaic distribution and the crystal domain size of ZnO(002) grains in the film normal direction was improved and decreased, respectively.
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Cho, Kilwon;Choi, Jaeseung;Yang, Jaeho;Kang, Byoung Il
- Journal of Adhesion and Interface
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- v.3 no.4
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- pp.19-26
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- 2002
In order to study the toughening mechanism of rubber modified polycarbonate, the sequence of development of micro-voids was investigated by real-time small angle X-ray scattering with Synchrotron radiation (SR-SAXS). The used test method was wedge test. The scattering intensity increases with increasing penetration depth of wedge, i.e. applied strain. The increase is due to the micro-void formation during deformation. This micro-void was uniformly developed in matrix and was different from large-void due to internal cavitation of rubber particle and/or debonding between rubber particle and polycarbonate matrix. The micro-void was developed at the critical strain and the radius of micro-void is around $600{\AA}$. Above the critical strain the size of micro-void remains almost constant with increasing applied strain. However, the population of micro-void increased with applied strain.
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