• 제목/요약/키워드: synchrotron X-ray scattering

검색결과 71건 처리시간 0.037초

PREFERRED ORIENTATION OF TIN FILM STUDIED BT A REAL TIME SYNCHROTRON X-RAY SCATTERING

  • Je, J.H.;Noh, D.Y.
    • 한국표면공학회지
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    • 제29권5호
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    • pp.399-406
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    • 1996

  • The orientational cross-over phenomena in an RF sputtering growth of TiN films were studied in an in-situ, real-time synchrotron x-ray scattering experiment. For the films grown with pure Ar sputtering gas, the cross-over from the more strained (002)-oriented grains to the less strained (111)-oriented grains occurred as the film thickness was increased. As the sputtering power was increased, the cross-over thickness, at which the growth orientation changes from the <002> to the <111> direction, was decreased. The addition of $N_2$ besides Ar as sputtering gas suppressed the cross-over, and consequently resulted in the (002) preferred orientation without exhibiting the cross-over. We attribute the observed cross-over phenomena to the competition between the surface and the strain energy. The x-ray powder diffraction, the x-ray reflectivity, and the ex-situ AFM surface topology study consistently suggest that the microscopic growth front was in fact always the (002) planes. In the initial stage of growth, the (002) planes were aligned to the substrate surface to minimize the surface energy. At later stages, however, the (002) growth front tilted away from the surface by about $60^{\circ}$ to relax the strain, which caused the cross-over of the preferred growth direction to the <111> direction.

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α-Fe2O3/AI2O3(0001) 박막 결정화의 방사광 X-선 산란 연구 (Crystallization of α-Fe2O3/AI2O3(0001) Thin films Studied by Synchrotron X-ray Scattering)

  • 조태식
    • 한국전기전자재료학회논문지
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    • 제15권8호
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    • pp.708-712
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    • 2002

  • The crystallization of amorphous $\alpha$-Fe$_2$O$_3$/$\alpha$-AI$_2$O$_3$(0001) thin films during thermal annealing in air has been studied using real-time synchrotron x-ray scattering. The well aligned (0.02$^{\circ}$/ FWHM) $\alpha$-Fe$_2$O$_3$and Fe$_3$O$_4$interfacial crystallites (50- -thick) coexist on the $\alpha$-AI$_2$O$_3$(0001) in the sputter-grown amorphous films at room temperature. The amorphous precursor is crystallized to the epitaxial $\alpha$-Fe$_2$O$_3$grains in three steps with annealing temperature; i ) the growth of the well aligned $\alpha$-Fe$_2$O$_3$interfacial crystallites, together with the transformation of the Fe$_3$O$_4$crystallites to the $\alpha$-Fe$_2$O$_3$ crystallites, ii ) the growth of the less aligned (3.08$^{\circ}$ FWHM)$\alpha$-Fe$_2$O$_3$grains on the well aligned grains (＞40$0^{\circ}C$), and iii) the nucleation of the other less aligned (1.39$^{\circ}$ FWHM) $\alpha$-Fe$_2$O$_3$grains directly on the $\alpha$-AI$_2$O$_3$substrate (＞$600^{\circ}C$). The effective thickness thinner than 230 may be very useful for enhancing the epitaxial quality of $\alpha$-Fe$_2$O$_3$/AI$_2$O$_3$(0001) thin films.

  • https://doi.org/10.4313/JKEM.2002.15.8.708 인용 PDF KSCI

사파이어 기판의 방향에 따른 ZnO 박막의 결정화 거동 (Sapphire orientation dependence of the crystallization of ZnO thin films)

  • 조태식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.1036-1038
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    • 2001

  • The sapphire orientation dependence of the crystallization of ZnO thin films has been studied using real-time synchrotron x-ray scattering. The amorphous ZnO thin films with a 2400-${\AA}$-thick were grown on sapphire(110) and sapphire(001) substrates by radio frequency magnetron sputtering at room temperature. The amorphous ZnO films were crystallization into epitaxial ZnO(002) grains both on the sapphire(110) and on the sapphire(001) substrates. The epitaxial quality, such as mosaic distribution and crystal domain size, of the ZnO grains on the sapphire(110) is high, similar to that of the ZnO grains on the sapphire(001). With increasing the annealing temperature to 600$^{\circ}C$, the mosaic distribution and the crystal domain size of ZnO(002) grains in the film normal direction was improved and decreased, respectively.

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소각 X-선 산란을 이용한 고무입자로 강인화된 폴리카보네이트의 변형에 관한 연구 (Small Angle X-ray Scattering Studies on Deformation Behavior of Rubber Toughened Polycarbonate)

  • 조길원;최재승;양재호;강병일
    • 접착 및 계면
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    • 제3권4호
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    • pp.19-26
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    • 2002

  • 고무입자로 강인화된 폴리카보네이트의 강인화 메커니즘을 연구하기 위하여 synchrotron X-선을 이용한 소각 X-선 산란법을 이용하여 실시간으로 변형 과정에서의 폴리카보네이트 내의 micro-void의 생성과 성장과정을 조사하였다. 시료는 직경 $0.3{\mu}m$의 가교화된 아크릴 고무입자로 강인화된 폴리카보네이트이며 wedge test 방식으로 시료에 변형을 가하면서 X-선을 조사하여 산란빔의 세기 변화를 살펴보았다. 변형이 증가함에 따라 산란빔의 세기가 증가하며 이는 폴리카보네이트 매트릭스 내의 micro-void의 생성에 의한 것으로 추정된다. 이러한 micro-void는 폴리카보네이트 매트릭스 내부에 생선된 것으로서 이는 고무입자와 매트릭스간의 계면분리 현상이나 고무입자 내부의 cavitation에 의한 void는 아닌 것으로 추정된다. 이 micro-void는 큰 void들과는 달리 특정한 변형 정도에 이르러 일정한 크기를 갖고 생성되기 시작하며 변형 정도가 증가하여도 그 크기는 증가하지 않고 단지 그 양만이 계속적으로 증가함을 알 수 있다.

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