• Title/Summary/Keyword: switching states

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FSM State Assignment for Low Power Dissipation Based on Markov Chain Model (Markov 확률모델을 이용한 저전력 상태할당 알고리즘)

  • Kim, Jong-Su
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.38 no.2
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    • pp.137-144
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    • 2001
  • In this paper, a state assignment algorithm was proposed to reduce power consumption in control-flow oriented finite state machines. The Markov chain model is used to reduce the switching activities, which closely relate with dynamic power dissipation in VLSI circuits. Based on the Markov probabilistic description model of finite state machines, the hamming distance between the codes of neighbor states was minimized. To express the switching activities, the cost function, which also accounts for the structure of a machine, is used. The proposed state assignment algorithm is tested with Logic Synthesis Benchmarks, and reduced the cost up to 57.42% compared to the Lakshmikant's algorithm.

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Traffic Engineering Based on Local States in Internet Protocol-Based Radio Access Networks

  • Barlow David A.;Vassiliou Vasos;Krasser Sven;Owen Henry L.;Grimminger Jochen;Huth Hans-Peter;Sokol Joachim
    • Journal of Communications and Networks
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    • v.7 no.3
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    • pp.377-384
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    • 2005
  • The purpose of this research is to develop and evaluate a traffic engineering architecture that uses local state information. This architecture is applied to an Internet protocol radio access network (RAN) that uses multi-protocol label switching (MPLS) and differentiated services to support mobile hosts. We assume mobility support is provided by a protocol such as the hierarchical mobile Internet protocol. The traffic engineering architecture is router based-meaning that routers on the edges of the network make the decisions onto which paths to place admitted traffic. We propose an algorithm that supports the architecture and uses local network state in order to function. The goal of the architecture is to provide an inexpensive and fast method to reduce network congestion while increasing the quality of service (QoS) level when compared to traditional routing and traffic engineering techniques. We use a number of different mobility scenarios and a mix of different types of traffic to evaluate our architecture and algorithm. We use the network simulator ns-2 as the core of our simulation environment. Around this core we built a system of pre-simulation, during simulation, and post-processing software that enabled us to simulate our traffic engineering architecture with only very minimal changes to the core ns-2 software. Our simulation environment supports a number of different mobility scenarios and a mix of different types of traffic to evaluate our architecture and algorithm.

A New State Assignment Technique for Testing and Low Power (테스팅 및 저진력을 고려한 상태할당 기술 개발)

  • Cho, Sang-Wook;Park, Sung-Ju
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.10
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    • pp.9-16
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    • 2004
  • The state assignment for a finite state machine greatly affects the delay, area, power dissipation, and testabilities of the sequential circuits. In order to improve the testabilities and power consumption, a new state assignment technique based on m-block partition is introduced in this paper. The algorithm minimizes the dependencies between groups of state variables are minimized and reduces switching activity by grouping the states depending on the state transition probability. In the sequel the length and number of feedback cycles are reduced with minimal switching activity on the state variables. Experiment shows significant improvement in testabilities and Power dissipation for benchmark circuits.

Simple Technique Reducing Leakage Current for H-Bridge Converter in Transformerless Photovoltaic Generation

  • Kot, Radoslaw;Stynski, Sebastian;Stepien, Krzysztof;Zaleski, Jaroslaw;Malinowski, Mariusz
    • Journal of Power Electronics
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    • v.16 no.1
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    • pp.153-162
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    • 2016
  • Given their structural arrangement, photovoltaic (PV) modules exhibit parasitic capacitance, which creates a path for high-frequency current during zero-state switching of the converter in transformerless systems. This current has to be limited to ensure safety and electromagnetic compatibility. Many solutions that can minimize or completely avoid this phenomenon, are available. However, most of these solutions are patented because they rely on specific and often complex converter topologies. This study aims to solve this problem by introducing a solution based on a classic converter topology with an appropriate modulation technique and passive filtering. A 5.5 kW single-phase residential PV system that consists of DC-DC boost stage and DC-AC H-bridge converter is considered. Control schemes for both converter stages are presented. An overview of existing modulation techniques for H-bridge converter is provided, and a modification of hybrid modulation is proposed. A system prototype is built for the experimental verification. As shown in the study, with simple filtering and proper selection of switching states, achieving low leakage current level is possible while maintaining high converter efficiency and required energy quality.

Phase Change Characteristics of Sb-Based Phase Change Materials

  • Park, Sung-Jin;Kim, In-Soo;Kim, Sang-Kyun;Choi, Se-Young
    • Korean Journal of Materials Research
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    • v.18 no.2
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    • pp.61-64
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    • 2008
  • Electrical optical switching and structural transformation of $Ge_{15}Sb_{85}$, $Sb_{65}Se_{35}$ and N2.0 sccm doped $Sb_{83}Si_{17}$ were studied to investigate the phase change characteristics for PRAM application. Sb-based materials were deposited by a RF magnetron co-sputtering system and the phase change characteristics were analyzed using an X-ray diffractometer (XRD), a static tester and a four-point probe. Doping Ge, Se or Si atoms reinforced the amorphous stability of the Sb-based materials, which affected the switching characteristics. The crystallization temperature of the Sb-based materials increased as the concentration of the Ge, Se or Si increased. The minimum time of $Ge_{15}Sb_{85}$, $Sb_{65}Se_{35}$ and N2.0 sccm doped $Sb_{83}Si_{17}$ for crystallization was 120, 50 and 90 ns at 12 mW, respectively. $Sb_{65}Se_{35}$ was crystallized at $170^{\circ}C$. In addition, the difference in the sheet resistances between amorphous and crystalline states was higher than $10^4{\Omega}/{\gamma}$.

Comparative Study of Flux Regulation Methods for Hybrid Permanent Magnet Axial Field Flux-switching Memory Machines

  • Yang, Gongde;Fu, Xinghe;Lin, Mingyao;Li, Nian;Li, Hao
    • Journal of Power Electronics
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    • v.19 no.1
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    • pp.158-167
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    • 2019
  • This research comparatively studies three kinds of flux regulation methods, namely, stored capacitor discharge pulse (SCDP), constant current source pulse (CCSP), and quantitative flux regulation pulse (QFRP), which are used for hybrid permanent magnet (PM) axial field flux-switching memory machines (HPM-AFFSMMs). Through an analysis of the operation principle and the series hybrid PM flux regulation mechanism of the objective machine, the circuit topologies and flux regulation process of these flux regulation methods are addressed in detail. On the basis of a simulation, the flux regulation characteristics of the researched machine during the magnetization and demagnetization processes are comparatively evaluated. Then, machine performance, including back EMF, direct and quadrature axis inductances, and magnetization and demagnetization characteristics, is quantitatively investigated. Results show that the QFRP enables the HPM-AFFSMM to achieve a less harmonic component of back EMF by approximately 7.28% and 7.97% at the magnetization and demagnetization states, respectively, and a more complete magnetization process than the SCDP and CCSP.

Memristors based on Al2O3/HfOx for Switching Layer Using Single-Walled Carbon Nanotubes (단일 벽 탄소 나노 튜브를 이용한 스위칭 레이어 Al2O3/HfOx 기반의 멤리스터)

  • DongJun, Jang;Min-Woo, Kwon
    • Journal of IKEEE
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    • v.26 no.4
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    • pp.633-638
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    • 2022
  • Rencently, neuromorphic systems of spiking neural networks (SNNs) that imitate the human brain have attracted attention. Neuromorphic technology has the advantage of high speed and low power consumption in cognitive applications and processing. Resistive random-access memory (RRAM) for SNNs are the most efficient structure for parallel calculation and perform the gradual switching operation of spike-timing-dependent plasticity (STDP). RRAM as synaptic device operation has low-power processing and expresses various memory states. However, the integration of RRAM device causes high switching voltage and current, resulting in high power consumption. To reduce the operation voltage of the RRAM, it is important to develop new materials of the switching layer and metal electrode. This study suggested a optimized new structure that is the Metal/Al2O3/HfOx/SWCNTs/N+silicon (MOCS) with single-walled carbon nanotubes (SWCNTs), which have excellent electrical and mechanical properties in order to lower the switching voltage. Therefore, we show an improvement in the gradual switching behavior and low-power I/V curve of SWCNTs-based memristors.

Mixed-mode simulation of transient characteristics of 4H-SiC DMOSFETs - Impact off the interface changes (Mixde-mode simulation을 이용한 4H-SiC DMOSFETs의 계면상태에서 포획된 전하에 따른 transient 특성 분석)

  • Kang, Min-Seok;Choe, Chang-Yong;Bang, Wook;Kim, Sang-Chul;Kim, Nam-Kyun;Koo, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.55-55
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    • 2009
  • Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility (${\sim}900cm^2/Vs$). These electronic properties allow high breakdown voltage, high frequency, and high temperature operation compared to Silicon devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances. the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. In this paper, we report the effect of the interface states ($Q_s$) on the transient characteristics of SiC DMOSFETs. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. The result is a low-loss transient characteristic at low $Q_s$. Based on the simulation results, the DMOSFETs exhibit the turn-on time of 10ns at short channel and 9ns at without the interface charges. By reducing $SiO_2/SiC$ interface charge, power losses and switching time also decreases, primarily due to the lowered channel mobilities. As high density interface states can result in increased carrier trapping, or recombination centers or scattering sites. Therefore, the quality of $SiO_2/SiC$ interfaces is important for both static and transient properties of SiC MOSFET devices.

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Development of Outbound Tourism Forecasting Models in Korea

  • Yoon, Ji-Hwan;Lee, Jung Seung;Yoon, Kyung Seon
    • Journal of Information Technology Applications and Management
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    • v.21 no.1
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    • pp.177-184
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    • 2014
  • This research analyzes the effects of factors on the demands for outbound to the countries such as Japan, China, the United States of America, Thailand, Philippines, Hong Kong, Singapore and Australia, the countries preferred by many Koreans. The factors for this research are (1) economic variables such as Korea Composite Stock Price Index (KOSPI), which could have influences on outbound tourism and exchange rate and (2) unpredictable events such as diseases, financial crisis and terrors. Regression analysis was used to identify relationship based on the monthly data from January 2001 to December 2010. The results of the analysis show that both exchange rate and KOSPI have impacts on the demands for outbound travel. In the case of travels to the United States of America and Philippines, Korean tourists usually have particular purposes such as studying, visiting relatives, playing golf or honeymoon, thus they are less influenced by the exchange rate. Moreover, Korean tourists tend not to visit particular locations for some time when shock reaction happens. As the demands for outbound travels are different from country to country accompanied by economic variables and shock variables, differentiated measure to should be considered to come close to the target numbers of tourists by switching as well as creating the demands. For further study we plan to build outbound tourism forecasting models using Artificial Neural Networks.

Continuous Viewing Angle Distribution Control of Liquid Crystal Displays Using Polarization-Dependent Prism Array Film Stacked on Directional Backlight Unit

  • Park, Min-Kyu;Park, Heewon;Joo, Kyung-Il;Jeong, Hee-Dong;Choi, Jun-Chan;Kim, Hak-Rin
    • Journal of the Optical Society of Korea
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    • v.20 no.6
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    • pp.799-806
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    • 2016
  • We present a polarization-dependent prism array film for controlling the viewing angle distribution of liquid crystal (LC) display panels without loss of light efficiency. On a directional backlight unit, our polarization-dependent prism array film, made into a stacked bilayer with a well-aligned liquid crystalline reactive mesogen (RM) layer on the UV-imprinted prism structure, can continuously control the light refraction function of the prism array by electrically switching incident polarization states of a polarization-controlling layer prepared by a twisted nematic LC mode. The viewing angle control properties of the polarization-dependent prism array film are analyzed under different prism angle and refractive index conditions of the RM layer. A simple analytic model is also presented to describe the intermediate viewing angle distributions with continuously varying applied voltages and incident polarization states.