• Journal of the Korean Society for Nondestructive Testing
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• v.26 no.2
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• pp.99-107
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• 2006

Magnetic nondestructive testing is very useful far detecting a crack on the surface or near of the surface of the ferromagnetic materials. The distribution of the magnetic flux leakage (DMFL) on a specimen has to be obtained quantitatively to evaluate the crack. The magnetic camera is proposed to obtain the DMFL at the large lift-off. The magnetic camera consists of a magnetic source, magnetic lens, analog to digital converters (ADCs), interface, and computer. The magnetic leakage fields or the distorted magnetic fields from the object, which are concentrated on the magnetic lens, are converted to analog electrical signals tv arrayed small magnetic sensors. These analog signals are converted to digital signals by the ADCs, and are stored, imaged, and processed by the interface and computer. However the magnetic camera has limitations with respect to converting and switching speed, full range and resolution, direct memory access (DMA), temporary storage speed and volume because common ADCs were used. Improved techniques, such as those that introduce the operational amplifier (OP-Amp), amplify the signal, reduce the connection line, and use the low pass filter (LPF) to increase the signal to noise ratio are necessary. This paper proposes the exclusive embedded ADC including OP-Amp, LPF, microprocessor and DMA circuit for the magnetic camera to satisfy the conditions mentioned above.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.27-27
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• 2011

For the design of real applicable molecular devices, current-voltage properties through molecular nanostructures such as metal-molecule-metal junctions (molecular junctions) have been studied extensively. In thiolate monolayers on the gold electrode, the chemical bonding of sulfur to gold and the van der Waals interactions between the alkyl chains of neighboring molecules are important factors in the formation of well-defined monolayers and in the control of the electron transport rate. Charge transport through the molecular junctions depends significantly on the energy levels of molecules relative to the Fermi levels of the contacts and the electronic structure of the molecule. It is important to understand the interfacial electron transport in accordance with the increased film thickness of alkyl chains that are known as an insulating layer, but are required for molecular device fabrication. Thiol-tethered RuII terpyridine complexes were synthesized for a voltage-driven molecular switch and used to understand the switch-on mechanism of the molecular switches of single metal complexes in the solid-state molecular junction in a vacuum. Electrochemical voltammetry and current-voltage (I-V) characteristics are measured to elucidate electron transport processes in the bistable conducting states of single molecular junctions of a molecular switch, Ru(II) terpyridine complexes. (1) On the basis of the Ru-centered electrochemical reaction data, the electron transport rate increases in the mixed self-assembled monolayer (SAM) of Ru(II) terpyridine complexes, indicating strong electronic coupling between the redox center and the substrate, along the molecules. (2) In a low-conducting state before switch-on, I-V characteristics are fitted to a direct tunneling model, and the estimated tunneling decay constant across the Ru(II) terpyridine complex is found to be smaller than that of alkanethiol. (3) The threshold voltages for the switch-on from low- to high-conducting states are identical, corresponding to the electron affinity of the molecules. (4) A high-conducting state after switch-on remains in the reverse voltage sweep, and a linear relationship of the current to the voltage is obtained. These results reveal electron transport paths via the redox centers of the Ru(II) terpyridine complexes, a molecular switch.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.8
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• pp.5541-5549
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• 2015

This paper introduces a safer and more power efficient heater by using induction heating, to apply to the semiconductor wafer fabrication exhaust gas cleaning system. The exhaust gas cleaning system is currently made with filament heater that generates an endothermic reaction of N2 gas for the removal of moisture. Induction theory, through the bases of theoretical optimization and electronic implementation, is applied in the design of the induction heater specifically for the semiconductor wafer exhaust system. The new induction heating design provides a solution to the issues with the current energy inefficient, unreliable, and unsafe design. A robust and calibrated design of the induction heater is used to optimize the energy consumption. Optimization is based on the calibrated ZVS induction circuit design specified by the resonant frequency of the exhaust pipe. The fail-safe energy limiter embedded in the system uses a voltage regulator through the feedback of the MOSFET control, which allows the system performance to operate within the specification of the N2 Heater unit. A specification and performance comparison from current conventional filament heater is made with the calibrated induction heater design for numerical analysis and the proof of a better design.

• Journal of the Korean Electrochemical Society
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• v.2 no.1
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• pp.17-22
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• 1999

Since the use of porous silicon for microsensors and microactuators is in the euly stage of study, only several application devices, such as light-emitting diodes and chemical sensors have so far been demonstrated. In this paper we present an overview of the present status of porous silicon sensors and actuators research with special emphasis on the applications of chemical sensors and optical devices. The capacitive type porous silicon humidity sensors had a nonlinear capacitance-humidity characteristic and a good sensitivity at higher humidity above $40\%RH$. The porous silicon $n^+-p-n^+$ device showed a sharp increase in current when exposed to an ethanol vapor. The $p^+-PSi-n^+$ diode fabricated on porous silicon diaphragm exhibited an optical switching characteristic, opening up its utility as an optical sensor or switch. The photoluminescence (PL) spectrum, taken from porous silicon under 365 nm excitation, had a broad emission, peaked at -610 nm. The electroluminescence(EL) from ITO/PSi/In LED had a broader spectrum with a blue shifted peak at around 535nm than that of the PL.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.6
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• pp.613-624
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• 2011

An MMIC multi-function chip for an X-band active phased array radar system has been designed and fabricated using a 0.5 ${\mu}m$ GaAs p-HEMT commercial process. A digital serial-to-parallel converter is included in this chip in order to reduce the number of the control interface. The multi-function chip provides several functions: 6-bit phase shifting, 6-bit attenuation, transmit/receive switching, and signal amplification. The fabricated multi-function chip with a relative compact size of 24 $mm^2$(6 mm${\times}$4 mm) exhibits a transmit/receive gain of 24/15 dB and a P1dB of 21 dBm from 8.5 GHz to 10.5 GHz. The RMS errors for the 64 states of the 6-bit phase shift and attenuation were measured to $7^{\circ}$ and 0.3 dB, respectively over the frequency.

• Journal of the Korean Society of Marine Environment & Safety
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• v.21 no.6
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• pp.759-769
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• 2015

Diode rectifiers are very popular in industry. However, they include large low-order harmonics in the input current and do not satisfy harmonic current content restrictions. To reduce the harmonics to the power system, several methods have been introduced. It is heavy and expensive solution to use passive filters as the solution for high power application. Another solution for the harmonic filter is utilization of active filter, but it is too expensive solution. Diode rectifiers with configurations using switching device have been introduced, but they are very complicated. The combined 12-pulse diode rectifier with the square auxiliary voltage supply has been introduced. It has the advantages that auxiliary circuit is simple and inexpensive compared to other strategies. The advanced auxiliary voltage supply in this thesis is presented as a new solution. When the square auxiliary voltage supply applied, the improvement of THD is 6~60[%] in whole load range. But when the advanced auxiliary voltage supply applied, it shows stable and excellent reduction effect of THD as 57~71[%]. Especially, for the case with 10[%] load factor, reduction effect of THD has little effect as 6[%] in the case of inserting a square auxiliary voltage supply. But when the proposed new solution applied, reduction effect has excellent effect as 71[%]. Theoretical analysis of the combined 12-pulse diode rectifier with the advanced auxiliary voltage supply is presented and control methods of the auxiliary supply is proposed. The reduction in the input current harmonics is verified by simulation using software PSIM.

• Korean Journal of Optics and Photonics
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• v.16 no.3
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• pp.287-294
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• 2005

In this paper, an optical true time-delay (TTD) for two-dimensional (2-D) phased array antennas (PAAs), composed of a multi-wavelength optical source and a fiber optic delay line matrix consisting of $2\times2$ optical switches with optical fiber connected between cross ports, has been proposed. A 2-bit $\times4-bit$ optical TTD for 10-GHz 2-D PAAs has been implemented by cascading a wavelength dependent TTD (WD-TTD) and a wavelength independent TTD (WI-TTD). The unit time delay for WD-TTD and WI-TTD have been chosen as ${\Delta}T=12ps$ and $\Delta\tau=6ps$, respectively. Time delay have been measured at all radiation angles. The maximum delay error for WD-TTD was measured to be 3 ps due to jitter incurred from gain switching. For the case of WI-TTD, error was within ${\pm}\;1\;ps$. The proposed optical TTD for a 2-D PAA has the following advantages: 1) higher gain compared to one-dimensional linear PAAs, 2) stabilization of optical power and wavelength by using a multi-wavelength optical source, and 3) fast beam scan and simple operation due to electronic control of the $2\times2$ optical switches matrix on a column-by-column basis.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.49 no.7
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• pp.39-47
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• 2012

The combination of the broadband property and the wide area coverage of satellite communications enables high speed transmission. Every user in the region under the satellite beam coverage can tranceiver and one can simultaneously communicate with multiple users. For these reasons, it is one of commendable telecommunication networks for information transfer. Since the satellite communications use open channels, it is likely to cause jamming with unwanted interference signals. In the thesis, APSK (Amplitude Phase Shift Keying) is employed, which is recommended for DVB-S2 due to high-speed transmission and excellent bandwidth efficiency. For obtaining reliable communication under the jamming environments, the communication satellite transponder rests on the polyphase filter bank structure, which enables switching among the subchannels and gain control on each subchannel, resulting in effectively eliminating jamming. Furthermore, the nulling scheme, one of the various anti-jamming approaches, is investigated, in which unwanted jamming signals are eliminated in the frequency domain after passing through the analysis part of the polyphase filter bank. The performance of the nulling scheme is evaluated for tone jamming and partial band jamming in terms of BER and EVM. The simulation results indicate that the nulling scheme improve the BER and EVM performance over the case without any anti-jamming approach.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.9
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• pp.73-80
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• 2004

In this paper, we present the cell resequencing buffer to solve the cell sequence integrity problem of the Cyclic banyan network that is a high-performance fault-tolerant cell switch. By offering multiple paths between input ports and output ports, using the deflection self-routing, the Cyclic banyan switch offer high reliability, and it also solves congestion problem for the internal links of the switch. By the way, these multiple paths can be different lengths for each other. Therefore, the cells departing from an identical source port and arriving at an identical destination port can reach to the output port as the order that is different from the order arriving at input port. The proposed cell resequencing buffer is a hardware sliding window mechanism. to solve such cell sequence integrity problem. To calculate the size of sliding window that cause the prime cost of the presented device, we analyzed the distribution of the cell delay through the simulation analyses under traffic load that have a nonuniform address distribution that express tile Property of traffic of the Internet. Through these analyses, we found out that we can make a cell resequencing buffer by which the cell sequence integrity is to be secured, by using a, few of ordinary memory and control logic. The cell resequencing buffer presented in this paper can be used for other multiple paths switching networks.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.16 no.6
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• pp.66-73
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• 2002

This paper presents ZVZCS(Zero-Voltage and Zero-Current Switching) Three Level DC/DC Converter without primary freewheeling diodes. The new converter presented in this paper used a phase shirt control with a flying capacitor in the primary side to achieve ZVS for the outer switches. A secondary anxiliary circuit which consists of one small capacitor, two small diodes and one coupled inductor, is added in the secondary to provide ZVZCS conditions to primary switches, ZVS for outer switches and ZCS for inner switches. Many advantages include simple secondary auxiliary circuit topology, high efficiency, and low cost make the new converter attractive for high power applications. Also the circulating current flows through the circuit so that it causes the needless coduction loss to be occurred in the devices and the transformer of the circuit The new converter has no primary auxiliary diodes for freewheeling current. The principle of operation, feature and design considerations are illustrated and verified through the experiment with a 1[㎾］ 50[KHz］IGBT based experimental circuit.