• International Journal of Air-Conditioning and Refrigeration
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• v.9 no.2
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• pp.28-35
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• 2001

This study deals with the thermal characteristics of finned-tube heat exchanger having two rows used in the air-conditioning application. Pressure drop and heat transfer coefficient were measured by using the three times models of plain fin and compared with the theory. Also the temperature distribution and heat conduction in the fin was measured by using the liquid crystal method. The surface temperature of rear row was nearly constant, and heat conduction in the fin was stronger near the front row than the rear row.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.290-290
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• 2011

In this study Diamond-like carbon (DLC) films were deposited on p-type Si substrates using a Radio-Frequency magnetron Sputtering system. The DLC film was deposited by bombarding graphite target with a N2/Ar plasma mixture with various conditions: substrate, pressure, deposition time, temperature of substrate, power and ratio of gas mixture. The effect on the conduction and hardness of DLC thin films were investigated. The conduction of DLC films were measured by I-V measurement. In addition, Raman analysis was performed to study the chemical bonding structure. The hardness was measured by Nano indentation. Atomic Force Microscopy was used for determined surface morphology of DLC film.

• Proceedings of the KIEE Conference
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• 1998.07g
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• pp.2553-2555
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• 1998

A single crystal Mn-Zn ferrite was directly etched by focused $Ar^+$ laser beam in $CCl_2F_2$ gas atmosphere. AES has been performed for locally investigating the surface composition of an etched layer. MnCl, ZnCl being created after the substrate and $CCl_2F_2$ chemically reacting was remained in the vicinity of laser irradiation area because of their low vapor pressure. Various patterns using computer were formed on the substrate. The etched grooves and patterned shapes were observed by SEM measurement.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.67-68
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• 2006

We prepared the AZO thin film with different $O_2$ gas flow rate. the AZO thin films were deposited on glass substrate at room temperature, working gas pressure of 1mTorr. the electrical, structural and optical properties of AZO thin films were investigated by using Hall Effect measurement system, X-ray Diffractometer (XRD) and UV-VIS spectrometer. From the results, we could obtain that AZO thin film with low resistivity of $8.5{\times}10^{-4}{\Omega}cm$ was exhibited in specific $O_2$ gas flow rate. Also, the transmittance of over 80% in visible range was observed in specific $O_2$ gas flow rate. In all of the AZO thin film with the transmittance of over 80%, diffraction peak of (002) direction was observed, while amorphous peak was observed in the AZO thin film with the low transmittance.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.69-70
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• 2006

The ITO thin films were prepared by Facing Targets Sputtering(FTS) method on polyethersulfon(PES) substrate. The ITO thin films were deposited with the film thickness of 100nm at room temperature and working gas pressure of 1 mTorr. As a function of sputtering conditions, electrical and optical properties of prepared ITO thin films were evaluated by Hall Effect Measurement(EGK) and UV-VIS spectrometer(HP), respectively. From the results, the ITO thin films was deposited was with a resistivity $8.3{\times}10^{-4}[{\Omega}-cm]$ and transmittance over 80% in the visible range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.434-435
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• 2005

In this work, the ITO thin films were prepared by FTS (Facing Targets Sputtering) system under different sputtering conditions which were varying $O_2$ gas flow, input current and working gas pressure. As a function of sputtering conditions, electrical and optical properties of prepared ITO thin films were measured. The electrical characteristics, surface roughness and transmittance of the ITO thin films were evaluated by Hall Effect Measurement, AFM, and UV-VIS spectrometer respectively. In addition, I-V properties of OLED cells were measured by 4156A(HP).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.7
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• pp.566-570
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• 2010

Electro-optic modulators based on 25 monolayer langmuir-blodgett films of vinylidene fluoride and trifluoroethylene, P(VDF-TrFE), were fabricated. The LB films were prepared by transferring the monolayers on to an ITO coated glass with a surface pressure of 5 dyne/cm by use of the langmuir-schaefer deposition method. Measurement of the electro-optic coefficient has been carried out using a simple reflection techique. The E/O coefficient was found to be 154.9 pm/V and that value remained stable for at least 50 days.

• Korean Journal of Materials Research
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• v.9 no.6
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• pp.595-598
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• 1999

Ultra-thin films of amphiphilic Squarylium dye were prepared on the hydrophilic glass substrate by Langumuir-Blodgett(LB) technique. From the measurement of the surface pressure-area($\pi$-A) isotherm at air-water interface, it was found that amphiphilic Squarylium dye can form the stable monolayers. Using the LB technique, the Z-type monolayer assembly can be obtained. The amphiphilic Squarylium dye LB films exhibit λ\ulcorner at 684nm. The absorption is significantly red-shifted from solution of amphiphilic Squarylium dye(637nm in chloroform), suggesting that the Squarylim chromophores form J-aggregate in the LB film.

• Bulletin of the Korean Chemical Society
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• v.13 no.1
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• pp.30-32
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• 1992

The apparent depth of space charge region on the ZnO $(10{\bar{1}}0)$ surface in chemisorption of oxygen has been estimated from the capacitance of two contacting faces. When the sample (donor concentration: $2.4{\times}10^{22}\;m^{-3}$) was evacuated at 773 K for 1 hr the depth reached to 40-100 ${\AA}$ depending on sample assembly. Admission of oxygen to the sample resulted in an increase of the depth to 3600 ${\AA}$ where the increment was greater at higher oxygen pressure between 6.6-1600 $N/m^2$. Admission of CO to the sample previously exposed to oxygen yields a decrease in the depth. The results of the measurement support that oxygen is adsorbed as an acceptor on ZnO $(10{\bar{1}}0)$.

• Bulletin of the Korean Chemical Society
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• v.18 no.11
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• pp.1175-1179
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• 1997

The adsorption of oxygen on ZnO was monitored by measuring the capacitance of two contacting crystals which have depletion layers originated from the interaction between oxygen and ZnO at 298 K-473 K. An admission of oxygen to the sample induced an irreversible increase in the depth and the amount of adsorbed oxygen was less than 0.001 monolayer in the experimental condition. The relation between pressure of oxygen and variation of the depth was tested from the view point of Langmuir or Freundlich isotherm. Using Hall effect measurement and kinetic experiment, a model equation on the adsorption process was proposed. From the results, it was suggested that oxygen adsorption depended on the rate of electron transfer from ZnO to oxygen while the amount of adsorbed oxygen was kinetically restricted by the height of surface potential barrier.