• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.1
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• pp.21-27
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• 2000

We used the surface photovoltage spectroscopy(SPVS) for characterization of GaAs/Al\ulcornerGa\ulcornerAs multi-quantum well(MQW) structures grown by molecular beam epitaxy(MBE) method. Energy gap related transitions in GaAs and AlGaAs were observed. The Al composition(x=0.3) was determined by Sek's composition formula. Transition energies in MQW were determined using the differential surface photo-volatage spectroscopy)DSPVS) of the measured resonanced. In order to indentify the transitions, the experimentally observed energies were compared with results of the envelope function approximation for a rectangular quantum well. We have observed and interesting behavior of the temperature dependence(80K~300K) of the 11Hand 11L transition for sample.

• Journal of the Korean Vacuum Society
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• v.19 no.5
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• pp.353-359
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• 2010

We report the surface photovoltage (SPV) properties of $In_{0.49}Ga_{0.51}P$/GaAs heterostructure grown by metal-organic chemical vapour deposition (MOCVD). The SPV measurements were studied as a function of modulation beam intensity, modulation frequency and temperature. From a line shape analysis of room temperature derivative surface photovoltage (DSPV) spectrum, the band gap energies for GaAs and $In_{0.49}Ga_{0.51}P$ transitions were 1.400 and 1.893 eV respectively. The surface photovoltage (SPV) increases with increasing the light intensity and temperature, whereas the SPV decreases with increasing the modulation frequency. From the temperature variation of the energy gaps, we have analysis by both Varshni and Bose-Einstein type expressions.

• Korean Journal of Materials Research
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• v.11 no.8
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• pp.655-660
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• 2001

Surface photovoltage spectroscopy was used to study $In_{0.5}(Ga_{1-x}Al_x)_{0.5}P/GaAs$ grown by metalorganic chemical vapor deposition(MOCVD). Energy gap related transition in GaAs and $In_{0.5}(Ga_{1-x}Al_x)_{0.5}P$ were observed. By measuring the frequency dependence of $In_{0.5}(Ga_{1-x}Al_x)_{0.5}P/GaAs$, we observed that SPV line shape does not chance, whereas the amplitude change. This results is due to the difference in the lifetimes of the photocarriers in GaAs and in $In_{0.5}(Ga_{1-x}Al_x)_{0.5}P$. We also have evaluated the parameters that describe the temperature dependences of the band gap.

• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.350-355
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• 2001

We have investigated characteristics of ZnSe epilayer grown by molecular beam epitaxy(MBE) on semi-insulating(SI) GaAs by using surface photovoltage(SPV). The measurements of SPV were performed with illumination intensity and modulation frequency. The bandgap energy of ZnSe epilayer was determined from derivative surface photovoltage (DSPV). The five states were observed at room temperature(RT), and those states relate to the impurity and defect formed hetero-interface of ZnSe and GaAs during the sample growth. The observed states represented as a tendency of typical extrinsic transition on the increasing illumination intensity. The 1s and 2s signals related to the excitonic absorption were not observed at RT, but those were presented with the splitted of two peaks in the SPV at 80 K. From the modulation frequency dependence, we obtained the junction conductance and capacitance of the sample.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.81-86
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• 2001

We have investigated surface photovoltage characteristics of InGaAs grown by metalorganic chemical vapor deposition (MOCVD) method on semi-insulating GaAs. The splitted SPV signals from the substrate and epilayer were observed. The band gap energy of InGaAs was about 1.376 eV, The In composition(x) was determined by Pan's composition formula. The photovoltage gradually decreases with increasing frequency. This is because the transfer of charge from the surface states reduces. From the temperature dependent SPV measurement, we obtained Varshni and temperature coefficients. In spectrum of etched sample at 300 K, the 'A' peak below $E_o(GaAs)$ is related with residual impurity during sample growth.

• Journal of Electrical Engineering and Technology
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• v.1 no.4
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• pp.543-545
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• 2006

Surface photovoltage (SPV) measurements were performed to investigate the optic-electrical properties in the electron beam irradiation semi-insulating GaAs (e-beam irradiation SI-GaAs) and semi-insulating GaAs (SI-GaAs). The signal intensity showed stronge. dependency on the frequency in the SI-GaAs than it did in the e-beam irradiation SI-GaAs. This result indicates that the number of the generated photo-carriers depends on the surface state. Also, the B region of the e-beam irradiation SI-GaAs found a weak signal. This result was explained by the surface and internal damage with e-beam irradiation.

• Journal of Microbiology and Biotechnology
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• v.14 no.5
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• pp.1038-1042
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• 2004

The photoelectric responses of a biodevice consisting of chlorophyll $\alpha$ Langmuir-Blodgett film were investigated. Chlorophyll $\alpha$ Langmuir-Blodgett films were deposited onto ITO and Au coated glass. To confirm film formation, surface analysis of chlorophyll $\alpha$ Langmuir-Blodgett film was carried out by measurement using atomic force microscopy. The metal/insulator/metal structured biodevice was constructed by depositing aluminum onto the chlorophyll $\alpha$ Langmuir-Blodgett film surface. To investigate the photoelectric response, the current-voltage characteristic was measured by the conducting metal tip. The photoswitching function and transient photovoltage characteristics of the proposed device were measured by irradiation with Ar ion laser and $N_2$ pulse laser, respectively. This research suggested that the proposed biodevice consisting of chlorophyll $\alpha$ could be applied to the molecular scale biosensor and/or bioelectronic device.

• Journal of the Korean Chemical Society
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• v.28 no.4
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• pp.251-258
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• 1984

The mechanism of photosensitization and the affect of binder on dye-sensitized ZnO have been studied by surface photovoltage spectroscopy. It has been found that the value of energy trapping level $E_{t1}$ on ZnO is 1.12eV (${\lambda$ = 1,100nm) and that of energy trapping level $E_{t2}$ on dye-sensitized ZnO is 0.99eV (${\lambda$ = 1,250nm) which is shifted towards a longer wavelength. The effect of binder on ZnO has been increased the efficiency of surface photovoltage, but it does not effect the values of energy trapping level. The acid-type dyes agree well with the prediction based on an electron transfer mechanism. The desensitization of the Na salt-type dyes for the intrinsic photoresponse of zinc oxide can be explained by energy transfer mechanism. It has been obtained that the dye-sensitized ZnO indicates the possibility of electrophotographic photosensitizer for the infrared range of light.

• Korean Journal of Materials Research
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• v.10 no.10
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• pp.698-702
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• 2000

The characteristics of optical absorption in $Al_{0.24}Ga_{0.76}As/GaAs$ multi-quantum wells(MQWs) structure were investigated by using the surface photovoltage(SPV). The Spy features near 1.42 eV showed two overlapping signals. By chemical etching, we found associated with the GaAs substrate and the GaAs cap layer. The Al composition(x=24 %) was determined by Kuech's composition formula. In order to identify the transition energies. the experimentally observed energies were compared with results of the envelope function approximation for a rectangular quantum wells An amplitude variation of the relative Spy intensity from the GaAs substrate, llH, and llL was observed at different light intensities. A variation in the SPY line shape of the transition energies were observed with decreasing tempera­t ture.

• Bulletin of the Korean Chemical Society
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• v.21 no.10
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• pp.1047-1048
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• 2000

Dye-sensitized nanocrystalline rutile $TiO_2$ solar cells were prepared, and the influence of Li+ and 1,2-dimethyl-3-hexyl imidazolium ions in the electrolyte on the photovoltaic properties was compared. The electrolyte con-taining Li+ ions produced a lower open-circuit photovoltage than the electrolyte with 1,2-dimethyl-3-hexyl im-idazolium ions, suggesting that the adsorption of Li+ ions to the rutile $TiO_2$ surface causes a shift in the band edges toward more positive potentials. At the same time, both the short-circuit photocurrent and the maximum value of the incident-photon-current conversion efficiency (IPCE) of the electrolyte containing Li+ ions were relatively higher. Data analysis suggests that presence of adsorbed Li+ ions improves via the phenomenon of band-edge movement the charge-injection efficiency by altering both the energy and number of excited state levels of the dye that participate in electron injection.