• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.644-647
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• 2007

We have fabricated vertical type organic thin film transistor using tris-8-hydroxyquinoline aluminum $(Alq_3)$. The effects of the growth control of $Alq_3$ thin layer on the grain structure and the flatness of film surface have been investigated. In addition, we have fabricated light emitting transistor and then investigated electroluminescent properties.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.22-23
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• 2006

High velocity compaction (HVC) is a production technique with capacity to significantly improve the mechanical properties of powder metallurgy (PM) parts. Investigated here are green body data such as density, tensile strength, radial springback, ejection force and surface flatness. Comparisons are performed with conventional compaction using the same pressing conditions. Cylindrical samples of a pre-alloyed water atomized iron powder are used in this experimental investigation. The HVC process in this study resulted in a better compressibility curve and lower ejection force compared to conventional quasi static pressing. Vertical scanning interferometry measurements show that the HVC process gives flatter sample surfaces.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.252.1-252.1
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• 2013

Hexagonal boron nitride (h-BN) is a two dimensional material which has high band-gap, flatness and inert properties. This properties are used various applications such as dielectric for electronic device, protective coating and ultra violet emitter so on. 1) In this report, we were growing h-BN sheet directly on sapphire 2"wafer. Ammonia borane (H3BNH3) and nickel were deposited on sapphire wafer by evaporate method. We used nickel film as a sub catalyst to make h-BN sheet growth. 2) During annealing process, ammonia borane moved to sapphire surface through the nickel grain boundary. 3) Synthesized h-BN sheet was confirmed by raman spectroscopy (FWHM: ~30cm-1) and layered structure was defined by cross TEM (~10 layer). Also we controlled number of layer by using of different nickel and ammonia borane thickness. This nickel film supported h-BN growth method may propose fully and directly growing on sapphire. And using deposited ammonia borane and nickel films is scalable and controllable the thickness for h-BN layer number controlling.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1033-1036
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• 2003

In this paper, Si anisotropic etching characteristics of tetramethylammonium hydroxide (TMAH)/ ammonium persulfate (AP) solutions were investigated to realize the optimum structure of a diaphragm for the piezoresistive pressure sensor application. Due to its low toxicity and its high compatibility with the CMOS processing, TMAH was used as Si anisotropic etchants. The variations of Si etch rate on the etching temperature, TMAH concentration, and etching time were obtained. With increasing the etching temperature and decreasing TMAH concentrations, the Si etch rate is increased while a significant non-uniformity exists on the etched surface because of formation of hillocks on the <100> surface. With the addition of AP to TMAH solution, the Si etch rate is increased and an improvement in flatness on the etching front is observed. The Si etch rate is also maximized with increasing the number of addition of AP to TMAH solution per one hour. The Si square diaphragms of 20${\mu}{\textrm}{m}$ thickness and 100~400${\mu}{\textrm}{m}$ one-side length were fabricated successfully by applying optimum Si etching conditions of TMAH/AP solutions.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.22 no.2
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• pp.310-317
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• 2013

In this paper, the contact pressure of the wafer and polishing pad for final polishing process for 300 mm-wafer were investigated through numerical analysis using FEM tool, ANSYS. The distribution of the contact pressure is one of main parameters which affects on the flatness and surface roughness of polished wafers. Two types of polishing head, a hard type head with ceramic disk and a soft type head with air bag were considered. The effects of the deformation and initial shape of table on the contact pressure were also examined. Both heads and tables were modeled as 3D finite element model from solid model, and the material properties of polishing pads and rubber plate for the air-bag head were obtained from tensile tests. The contact pressure deviation on wafer surface was smaller with air bag head than hard type head even when the table had form errors such as convex or concave. From this 3D analysis, it could be concluded that the air-bag head has better uniformity of the contact pressure on wafer. Also, the effects of inner diameter of air bag and radial clearance between wafer and retainer were investigated as view point of contact pressure concentration on the edge of wafer.

• Radiation Oncology Journal
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• v.11 no.2
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• pp.455-461
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• 1993

Experimental measurements of dose characteristics with pentagonal applicator at nominal energy of 4, 6, 9, 12 and 15 MeV electron beam were performed for intraoperative radiotherapy (IORT) in ML-15MDX linear accelerator. This paper presents the percent depth dose, surface dose, beam flatness and output factors of using the IORT applicator in different electron beam energy. The output factor showed as a 24 percent higher in IORT applicator than that of reference $10{\times}10cm^2$ applicator. The surface dose of using the IORT applicator showed 7.7 and 2.7 percent higher than that of reference field in 4 and 15 MeV electron beam, respectively. In our experiments, the variation of percent depth dose was very small but the output factor and flatnees at 0.5 cm depth have showed a large value in IORT applicator.

• Journal of the Semiconductor & Display Technology
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• v.2 no.4
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• pp.19-22
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• 2003

In this paper, Si anisotropic etching characteristics of tetramethylammonium hydroxide (TMAH)/ammonium persulfate (AP) solutions were investigated to realize the optimum structure of a diaphragm for the piezoresistive pressure sensor application. Due to its low toxicity and its high compatibility with the CMOS processing, TMAH was used as Si anisotropic etchants. The variations of Si etch rate on the etching temperature, TMAH concentration, and etching time were obtained. With increasing the etching temperature and decreasing TMAH concentrations, the Si etch rate is increased while a significant non-uniformity exists on the etched surface because of formation of hillocks on the <100> surface. With the addition of AP to TMAH solution, the Si etch rate is increased and an improvement in flatness on the etching front is observed. The Si etch rate is also maximized with increasing the number of addition of AP to TMAH solution per one hour. The Si square diaphragms of 20$\mu\textrm{m}$ thickness and 100-400 $\mu\textrm{m}$ one-side length were fabricated successfully by adding AP of (5/6)g to 800 ml TMAH solution every 10 minutes.

• Journal of the Korean institute of surface engineering
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• v.43 no.1
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• pp.1-6
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• 2010

The effect of organic additives, 1-(3-sulfoproyl)-2-vinylpyridineium hydroxide (SVH) and thiourea (TU), on the precision copper electrodeposition was investigated with optical, electrochemical and x-ray diffraction techniques. It was found that SVH played a r ole as a n accelerator and TU as an i nhibitor during the electroreduction of cupric ions in acidic Cu electroplating solution. Through electrochemical measurements, TU showed more strong interaction with cupric ions than SVH and dominated overall Cu electroplating process when both additives were present in the solution. In the case of three dimensional Cu electrodeposition on the 20 ${\mu}m$-patterned Ni substrates, SVH controlled the upright growth of Cu electrodeposits and so determined its flatness, while TU prohibited the lateral spreading of Cu in the course of pulse-reverse pulse current adaptation. With microscopic observation, we obtained the optimum organic additives composition, that is, 100 ppm SVH and 200 ppm TU during the current pulsation.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.15 no.2
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• pp.22-30
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• 2016

It is very important to obtain the net shape of the product to maximize the shear cutting surface of fine blanking. In this paper, the fine blanking die was manufactured to achieve part characteristics, such as flatness and a fully sheared surface. The V-ring in the fine blanking die was designed to prevent lateral movement of the material. The fine blanking experiment was conducted with the fine blanking die. The material usage rate was increased by over 5.7% and that of the water-soluble lubricant was decreased by over 33% when the 2-cavity die technology was applied to fine blanking. The capacity of the existing press could lead to productivity improvement and cost reduction. Thus, 2-cavity die technology for fine blanking with a minute module of an accurate gear for producing seat recliner parts was developed.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.17 no.2
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• pp.1-6
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• 2008

In recent years, developments in the semiconductor and electronic industries have brought a rapid increase in the use of large size silicon wafer. For further improvement of the ultra precision surface and flatness of Si wafer necessary to high density ULSI, it is known that polishing is very important. However, most of these investigation was experiment less than 300mm diameter. Polishing is one of the important methods in manufacturing of Si wafers and in thinning of completed device wafers. This study reports the machining variables that has major influence on the characteristic of wafer polishing. It was adapted to polishing pressure, machining speed, and the slurry mix ratio, the optimum condition is selected by ultra precision wafer polishing using load cell and infrared temperature sensor. The optimum machining condition is selected a result data that use a pressure and table speed data. By using optimum condition, it achieves a ultra precision mirror like surface.