• 공업화학
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• 제10권1호
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• pp.67-72
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• 1999

Nylon-inorganic filler alloy의 도금에 있어 최적 전처리 공정에 관하여 연구하였다. Nylon-inorganic filler alloy는 etching 공정만으로도 무정형층을 제거하여 요구되는 충분한 밀착력을 얻을 수 있었다. SEM과 표면조도 측정으로부터 etching 공정이 수지표면을 매우 거칠고 접착력을 우수하게 만든다는 결과를 얻었으며, 도금물질의 표면상태와 접착력은 Nylon-inorganic filler alloy 수지의 성형조건에 의존한다는 것을 확인하였다. EDS 분석으로 전처리 후 수지표면의 잔류금속의 종류와 양을 측정한 결과 Cr은 Sn과 Pd의 흡착에 크게 영향을 미치지 않는 것으로 나타났다.

• 한국세라믹학회지
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• 제46권6호
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• pp.685-688
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• 2009

Surface Texturing is very important process for high cell efficiency in crystalline silicon solar cell. Anisotropic texturing with an alkali etchant was known not to be able to produce uniform surface morphology in multi-crystalline silicon (mc-Si), because of its different etching rate with random crystal orientation. In order to reduce surface reflectance of mc-Si wafer, the general etching tendency was studied with HF/HN$O_3$/De-ionized Water acidic solution. And the surface structures of textured mc-Si in various HF/HN$O_3$ ratios were compared. The surface morphology and reflectance of textured silicon wafers were measured by FE-SEM and UVvisible spectrophotometer, respectively. We obtained average reflectance of $16{\sim}19$% for wavelength between 400 nm and 900 nm depending on different etching conditions.

• 대한치과보철학회지
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• 제23권1호
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• pp.83-95
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• 1985

The purpose of this study was to evaluate microstructures on the etched surface of 11 base metal alloys for dental restorations and to observe the relationship between the etching pattern and beryllium. For this purpose, the following experiments were done; 11 base metal alloys were etched in (1) 10% $H_2SO_4$, (2) 10% $H_2SO_4$, 9 parts+methanol 1 part (3) Conc. $HNO_3$ 25%+glacial acetic acid 25%+$H_2O$ 50% (4) Conc. $HNO_3$ 5% (5) 2% glacial acetic acid added to Conc. $HNO_3$ 1% solution, with their etching conditions varied. Etched surface of alloys were examined under the scanning electron microscope. Results were as follows; 1. Almost all of Ni-Cr-Be alloys showed gooed etchd surface in $H_2SO_4$, solution, while some of those alloys which contains no beryllium showed good etched surface in $HNO_3$ solution. 2. Main components of etching solution can vary etching pattern of alloys. 3. Gamma prime phase relief, which can be found in all Ni-Cr-Be alloys, can't be found in any alloy that contains no beryllium.

• 대한금속재료학회지
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• 제46권12호
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• pp.835-840
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• 2008

Texturing for crystalline silicon solar cells is one of the important techniques to increase conversion efficiency by effective photon trapping. Generally, incoming wafers or alkali etched wafers are used for texturing. From this conventional etching process, $7{\sim}10{\mu}m$-sized random pyramids are formed. In this study, acid etching for removal of saw damages was practiced before texturing. This improved the resulting surface morphology, which consisted of $2{\sim}4{\mu}m$-sized pyramids. Because these pyramids covered the surface much more extensively, we obtained reduction of optical losses on the surface. In order to compare with conventional texturing, FE-SEM is used for observing surface morphology and reflectance data is analyzed by UV-VIS spectrophotometer.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권5호
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• pp.265-269
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• 2000

$(Ba, Sr)TiO_3$thin films were etched with a magnetically enhanced inductively coupled plasma (MEICP) at different CF4/Ar gas mixing ratios. Experimental was done by varying the etching parameters such as rf power, dc bias and chamber pressure. The maximum etch rate of the BST films was $1800{AA}/min$ under $CF_4/(CF_4+Ar)$ of 0.1, 600 W/350 V and 5 mTorr. The selectivity of BST to Pt and PR was 0.6, 0.7, respectively. X-ray photoelectron spectroscopy (XPS) results show that surface reaction between Ba, Sr, Ti and C, F radicals occurs during the (Ba, Sr)TiO3 etching. To analyze the composition of surface residue after the etching, films etched with different CF_4/Ar$ gas mixing ratio were investigated using XPS and secondary ion mass spectroscopy (SIMS).

• 한국표면공학회지
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• 제28권2호
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• pp.101-109
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• 1995

Electroetching rates of $FeCl_3$ solution were increased according to increasing solution temperature. Activation energy of electroetching at Be'36 and 5A/$dm^2$ condition was 28.3Kcal and also, at Be'46 and 5A/dm$^2$ condition was 33.2Kcal. At Be'36 concentration of $FeCl_3$ solution, electroetching rate were more higher than at Be'46 concentration. Surfaces of etched grooves obtained at 8A/$dm^2$ or higher current density in 46 Be' concentration of $FeCl_3$ solution were observed to be flat and smooth owing to suppressing chemical etching reaction. Distinctly etched boundaries became to be appeared at 2A/$dm^2$ in Be'41 electroetching condition by differential effects. In case of applying 8A/$dm^2$ current density to Be'46 of $FeCl_3$ solution, etching depth were 4 times and side etching were 6 times more than chemical etching case respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.52-55
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• 2000

In this study, (Ba,Sr)$TiO_3$(BST) thin films were etched with a magnetically enhanced inductively coupled plasma(MEICP) as a function Ar/$CF_4$ gas mixing ratio. Experiment was done by varying the etching parameters such as rf power, dc bias voltage and chamber pressure. The maximum etch rate of the BST films was 1700 ${\AA}/min$ under $CF_4/(CF_4+Ar)$ of 0.1, 600 W/350 V and 5 mTorr. The selectivity of BST to Pt and PR was 0.6, 0.7, respectively. X -ray photoelectron spectroscopy(XPS) studies shows that there are surface reaction between Ba, Sr, Ti and C, F radicals during the etching. To analyze the composition of surface residue remaining after the etching, films etched with different $CF_4$/Ar gas mixing ratio were investigated using XPS.

• 대한치과보철학회지
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• 제30권1호
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• pp.85-91
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• 1992

The purpose of this study was to evaluate the bonding strength between porcelain laminate and Ni-Cr alloy in the various surface treatments of the bonding faces. For this study the metal surface of specimens were treated : 1) etching only, 2) sandblasting only, and 3) sandblasting and etching. The porcelain laminate were made and bonded to the metal specimens with light curing composite resin cement. Instron testing machine was used to measure their bonding strength : and the result was obtained as follows : 1. The bonding strength of the double treatment of the sandblasting and etching group was higher than that of the single treatment of sandblasting or the etching group. 2. The bonding strength of the sand blasting group was higher than that of the etching group. 3. The debonding were mainly occurred between the Ni-Cr alloy and the composite resin cement.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 춘계학술대회
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• pp.1344-1348
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• 2003

It is generally known to be difficult to etch a surface of a transparent material such as fused silica by conventional laser ablation in which the surface is simply irradiated with a laser beam. A lot of studies have been done to provide a method capable of efficiently etching transparent materials without defects such as cracks. One of the promising methods or the micro-machining of optically transparent materials is laser induced etching. In this study, micro-drilling of fused silica by laser induced wet etching was conducted. KrF excimer and YAG laser were used as light sources. Acetone solution pyrene and ethanol solution of rhodamine were used as etchant.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2001년도 춘계학술대회 논문집
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• pp.1068-1071
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• 2001

Recently, the minimum line width shows a tendancy to decrease and the multi-level to increase in semiconductor. Therefore, a planarization technique is needed, which chemical polishing(CMP) is considered as one of the most important process. CMP accomplishes a high polishing performance and a global planarization of high quality. But there are several defects in CMP such as microscratches, abrasive contaminations, and non-uniformity of polished wafer edges. Spin Etching can improve the defects of CMP. It uses abrasive-free chemical solution instead of slurry. Wafer rotates and chemical solution is simultaneously dispensed on a whole surface of the wafer. Thereby chemical reaction is occurred on the surface of wafer, material is removed. On this study, TEOS film is removed by CMP and Spin Etching, the results are estimated at a viewpoint of material removal rate(MRR) and within wafer non-uniformity(WIWNU).