• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2006년도 춘계학술대회 논문집
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• pp.361-362
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• 2006

This paper presents the robust design of gripper part for a high-speed LCD (Liquid Crystal Display) transfer system. In this paper, the 1st DOE (Design of Experiment) is conducted to find out main-effect factors fur the design of gripper part. Thirty-six experiments are performed using $ANSYS^{(R)}$ and their results are statistically analyzed using $MINITAB^{(R)}$, which shows that the factors, i.e., First-width, Second-width, Rec-width, and thickness of gripper part, are more important than other factors. The main effect plots shows that the maximum deflection and mass of gripper part are minimized by increasing First-width, Second-width, Rec-width and thickness. The 2nd DOE is conducted to obtain RSM (Response Surface Method) equation. The CCD (Central Composite Design) technique with four factors is used. Optimum design is conducted using the RSM equation. Genetic algorithm is used for optimal design. Six sigma robust design is conducted to find out a guideline for control range of design parameter. To obtain six sigma level reliability, the standard deviations of design parameters are shown to be controlled within 5% of average design value.

• 대한기계학회논문집A
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• 제36권12호
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• pp.1563-1568
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• 2012

인쇄전자는 RFID 나 유연 디스플레이 등의 전자회로나 소자를 인쇄방식으로 제작하는 공정이다. 특히 롤투롤과 같은 웹 이송방식 프린팅은 얇은 필름형태의 웹(Web)에 그라비아 인쇄나 고속 잉크젯과 같은 방법으로 이송중인 웹 상에 회로를 형성하는 공법이다. 이 공정은 생산단가가 저렴하고 고속생산이 가능하다는 이점이 있다. 다층구조를 가지는 회로나 디바이스를 생산할 때, 층과 층을 얼마나 정확하게 중첩시켜 인쇄하는가 하는 것은 인쇄된 전자회로의 집적도와 성능을 결정짓는 중요한 요소이다. 인쇄전자공법을 상용화하기 위해서 높은 중첩정밀도 구현이 선행되어야 한다. 본 연구에서는 롤투롤 인쇄방식에서 중첩정밀도의 향상을 위한 위치측정 시스템을 제안하고 신뢰성을 확인하였다. 또한 웹이 변형되었을 때의 측정 강인성도 실험적으로 확인하였다.

• 대한미생물학회지
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• 제21권2호
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• pp.171-179
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• 1986

The HLA class II region encodes a series of polymorphic glycoproteins that form cell surface heterodimers each consisting of one $\alpha$ and one $\beta$ chain. Thess class II molecules are encoded by genes clustered within three loci. DP, DQ, and DR are functfonally implicated as regulatory signals in intercellular communication during the immune resposes. The phenotypic hallmark of the HLA complex is a high degree of structural and functional polymorphism. Detailed analysis. of such polymorphisms should aid in understanding the molecular basis for associations between HLA and diseases. We have used techniques of restriction enzyme fragment analysis by Southern blotting to investigate polymorphisms associated with DQ $\beta$ class II genes on haplotypes expressing the HLA-DR4 and -DQw3 specificities. The endonucleases Hind III and Bam HI were used to identify a specific DQ $\beta$ genomic polymorphism that precisely corrresponds with the reactivity of a monoclonal antibody A-10-83, previously shown to define a serologic split of DQw3. This study identifies two allelic DQ va. riants. DQw3.1 and DQw3.2. We used these specific genotypic markers to investigate the genomic basis of the association of DR4 with insulin-dependent diabetes mellitus(IDDM) and seropositive juvenile rheumatoid arthritis(JRA). The DR4 positive IDDM demonstrate the predominant expression of DQw3.2 and the very rare expression of DQw3.l. However, in haplotype matched siblings from two IDDM families, all of the DR4 positive siblings display a IDDM-associated DQw3.2 allele. Thus, both affected and healthy individuals can carry the same haplotypes and genomic markers, demonstrating that thess specific allelic variants are genetic elements that indicate a increased risk of IDDM but are not in fact disease specific. We contrasted this result with a similar analysis of patients with another DR4-associated disease, JRA. In contrast to the preponderance of the DQw3.2 allele in IDDM, the JRA patients expressed either the DQw3.1 or the DQw3.2 allele and sometimes both, without apparent association with disease expession. The different genomic markers reported here within HLA-DQ region potentially an analysis of HLA-associated function and disease susceptibility.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.125-125
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• 2011

In this study, we investigated the electrical, optical, structural, and surface properties of indium zinc oxide (IZO)/Ag/IZO multilayer electrode grown by specially designed roll-to-roll sputtering system using the flexible substrate. By the continuous roll-to-roll sputtering of the bottom IZO, Ag, and top IZO layers at room temperature, they were able to fabricate a high quality IZO/Ag/IZO multilayer electrode. At optimized conditions, the bottom IZO layer (40 nm) was deposited on a flexible substrate. After deposition of the Bottom IZO layer, Ag layer was deposited onto the bottom IZO film as a function of DC power (200~500 W). Subsequently, the top IZO layer was deposited onto the Ag layer at identical deposition conditions to the bottom IZO layer (40 nm). We investigated the characteristics of IZO/Ag/IZO multilayer electrode as a function of Ag thickness. It was found that the electrical and optical properties of IZO/Ag/IZO multilayer electrode was mainly affected thickness of the Ag layer at optimized condition. In case of IZO/Ag/IZO multilayer electrode with the Ag power (350W), it exhibited a low sheet resistance of 7.1 ohm/square and a high transparency of 86.4%. Furthermore, we fabricated the touch screen panel using the IZO/Ag/IZO multilayer electrode, which demonstrate the possibility of the IZO/Ag/IZO multilayer electrode grown by roll-to-roll sputtering system as a transparent conducting layer in the touch screen panel.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.254-254
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• 2011

현재 AMLCD(Active Matrix Liquid Crystal Display)는 노트북, 컴퓨터, TV등 여러 영상매체에 있어 가장 많이 활용되고 있는 디스플레이로 손꼽힌다. AMLCD에 구동소자로 사용되는 a-Si:H TFT는 낮은 제조비용과 축적된 기술을 바탕으로 가장 많이 쓰이고 있다. 특히 a-Si이 가지는 소형화나 대형화의 편의성은 모바일 기기, projection TV, 광고용 패널 등 적용분야가 점점 넓어지고 있는 추세이다. 하지만 a-Si라는 물질 자체가 가지는 낮은 이동도는 더 많은 application을 위해 해결되어야 할 과제이다. 낮은 이동도는 a-Si 실리콘 원자간 결합의 불규칙성 및 무질서와 dangling bond에 의한 localize state(deep trap, band tail)의 존재 때문에 발생하며 결과적으로 TFT 소자의 특성의 저하를 가져온다. 앞선 연구에서는 carrier이동도의 개선을 위해서 첫 번째로 insulator층과 active층 사이의 계면 상태를 향상시키기 위해 insulator로 쓰이는 a-SiN층 표면에 0~18 sccm의 유량으로 phosphorus를 주입하였다. AFM분석을 해본 결과 phosphorus를 주입함으로써 계면의 roughness가 줄어드는 것을 확인 할 수 있었다. 이러한 계면의 roughness 감소는 표면 산란(surface scattering)및 전자 포획(trap)의 영향을 줄임으로써 이동도의 향상을 가져왔다. 두 번째로 active층으로 쓰이는 a-Si:H 층의 표면에 phosphorus를 0?9sccm의 유량으로 doping하였다. 이로 인해 channel이 형성되는 active 영역에 직접적으로 불순물을 doping됨으로써 전도도를 증가되어 이동도를 향상시켰다. 하지만 지나친 doping은 불순물 산란(impurity scattering)의 증가로 인해 이동도를 저하시키는 결과를 보여 주었다. 본 연구에서는 TFT의 이동도 향상을 위해 두 가지의 technology를 함께 적용시켜 a-SiN/a-Si:H 계면 각각에 phosphorus를 주입 및 doping을 하였다. 모든 박막은 PECVD로 제작하였으며 각 박막의 두께는 a-SiN/a-SiN(phosphorus)/a-Si:H(doped)/a-Si:H/n+ a-Si($2350{\AA}/150{\AA}/150{\AA}/1850{\AA}/150{\AA}$)으로 고정하고 유량을 변화시키면서 특성을 관찰하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.388-388
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• 2011

Graphene, with its unique physical and structural properties, has recently become a proving ground for various physical phenomena, and is a promising candidate for a variety of electronic device and flexible display applications. The physical properties of graphene depend directly on the thickness. These properties lead to the possibility of its application in high-performance transparent conducting films (TCFs). Compared to indium tin oxide (ITO) electrodes, which have a typical sheet resistance of ~60 ${\Omega}/sq$ and ~85% transmittance in the visible range, the chemical vapor deposition (CVD) synthesized graphene electrodes have a higher transmittance in the visible to IR region and are more robust under bending. Nevertheless, the lowest sheet resistance of the currently available CVD graphene electrodes is higher than that of ITO. Here, we report an ingenious strategy, irradiation of MeV electron beam (e-beam) at room temperature under ambient condition,for obtaining size-homogeneous gold nanoparticle decorated on graphene. The nano-particlization promoted by MeV e-beam irradiation was investigated by transmission electron microscopy, electron energy loss spectroscopy elemental mapping, and energy dispersive X-ray spectroscopy. These results clearly revealed that gold nanoparticle with 10~15 nm in mean size were decorated along the surface of the graphene after 1.0 MeV-e-beam irradiation. The fabrication high-performance TCF with optimized doping condition showed a sheet resistance of ~150 ${\Omega}/sq$ at 94% transmittance. A chemical transformation and charge transfer for the metal gold nanoparticle were systematically explored by X-ray photoelectron spectroscopy and Raman spectroscopy. This approach advances the numerous applications of graphene films as transparent conducting electrodes.

• 한국재료학회지
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• 제5권8호
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• pp.929-935
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• 1995

구동 IC를 유리기판 위의 Al패드 전극에 연결하는 LCD(Liquid Crystal Display) 모듈을 실장하는 Chip On Glass (COG) 기술을 개발하기 위하여 기존에 잘 알려진 기술 가운데 실제로 적용 가능성이 가장 유망한 이방성 도전 접착제 (ACA, Anisotropic Conductive Adhesives)를 사용한 공정에 대하여 조사하였다. ACA 공정은 본딩 부분에 ACA 수지를 균일하게 분포시키는 공정과 자외선을 조사하여 수지를 경화하여 칩을 실장하는 공정의 2단계로 진행하였다. 칩에 가해준 하중은 2-15kg이었고 칩의 예열 온도는 12$0^{\circ}C$이었다. 이방성 도전체는 Au 또는 Ni이 표면 피막 재료로 사용된 것을 사웅하였으며 전도성 입자의 갯수가 500, 1000, 2000, 4000개/$\textrm{mm}^2$이며 크기가 5, 7, 12$\mu\textrm{m}$이었다. ACA 처리의 결과 입자 크기가 5$\mu\textrm{m}$이고 입자 밀도는 4000개/$\textrm{mm}^2$일 경우가 대단히 낮은 접촉 저항 및 가장 안정된 본딩 특성을 나타냈었다.

• 한국재료학회지
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• 제10권8호
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• pp.558-563
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• 2000

$Y_2SiO_5:Ce$ 형광체를 $In_2O_3$, $Al_2O_3$ 및 $SiO_2$로 코팅한 후 전계 방출 디스플레이에 요구되는 음극선 발광 특성을 조사하였다. $Al_2O_3$ 코팅으로 $Y_2$SiO(sub)5:Ce 형광체의 발광 효율과 에이징 특성은 감소되었다. 한편 $Al_2$$O_3$코팅으로 형광체의 발광효율은 증가하였으나 발광스펙트럼과 색좌표는 일부 변화하였다. 그러나 $Y_2SiO_5:Ce$ 청색 형과체의 발광 효율은 $SiO_2$코팅으로 크게 증가하였으며, 또한 $SiO_2$ 코팅한 $Y_2SiO_5:Ce$ 형광체의 에이징 특성은 코팅 전에 비하여 크게 향상되었다.

• 한국수산과학회지
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• 제46권3호
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• pp.296-302
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• 2013

The effects of temperature on spore release, growth and photosynthetic efficiency of Lithophyllum yessoense and Hildenbrandia rubra were examined. L. yessoense was collected at Galnam and H. rubra was collected at Gyeokpo, Korea. The experimental temperatures were different for spore release (10, 15, $20^{\circ}C$), sporeling growth (10, 15, 20, 25, $30^{\circ}C$) and photosynthetic efficiency (10, 15, 20, $25^{\circ}C$). All other culture conditions were the same: 34 psu, 12:12 LD and $50{\mu}mol$ photon $m^{-2}s^{-1}$. Spore liberation was maximal at $10^{\circ}C$ for L. yessoense and at $20^{\circ}C$ for H. rubra. After 14 days, the surface area of L. yessoense was 0.031 $mm^2$ at $25^{\circ}C$ and for H. rubra was 0.032 $mm^2$ at $20^{\circ}C$. Sporelings of L. yessoense were a dark-red color and grew in a round shape. In contrast, H. rubra was bright pink and changed from a round shape in the early growth stage to later become flabelliform. Photosynthetic efficiency was highest between $20-25^{\circ}C$ in both species. In conclusion, L. yessoense and H. rubra display different physiological features based on the optimal temperatures for spore release and sporling growth.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.117-118
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• 2000

The secondary electron emission coefficient ${\gamma}$ of MgO single crystals according to the gas mixture ratio of Xe to Ne have been investigated by ${\gamma}-focused$ ion beam system. It is found that the MgO single crystals of (111) crystallinity has the highest ${\gamma}$ from 0.09(0.03) up to 0.16(0.04), while from 0.07(0.02) to 0.15(0.03) for (200) and from 0.06(0.01) to 0.13(0.02) for (220) crystallinity for operating Ne (Xe) ions ranging from 50eV to 200eV throughout this experiment. And it is found that the ${\gamma}$ ranged from 0.03 up to 0.06 for Ne-Xe mixtures are much smaller than those of 0.09 up to 0.16 for pure Ne ions under accelerating voltage ranged from 50V to 200V.