• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.407-414
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• 1996

We have investigated the effects of H atoms on thin film growth processes and surface reactions. In the oxidation of Si, Si surfaces are passivated against the $O_2$ adsorption by terminating dangling bonds with H atoms. Moreover, the existence of Si-H bonds on Si(100) surfaces enhances the structural relaxation of Si-O-Si bonds due to a charge transfer from Si-Si back bonds. In the heteroepitaxial growth of a Si/Ge/Si(100) system, H atoms suppress the segregation of Ge atoms into Si overlayers since the exchange of Ge atoms with Si atoms bound with H must be accompanied with breaking of Si-H bonds. However, 3-dimensional island growth is also promoted by atomic H irradiation, which is considered to result from the suppression of surface migration of adsorbed reaction species and from the lowering of step energies by the H termination of dangling bonds.

• Polymer(Korea)
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• v.24 no.2
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• pp.211-219
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• 2000

Fluorene-based light emitting polymer blends with liquid crystalline characteristics were studied on effective energy transfer and dichroic characteristics. Incorporating 0.5 wt% of the non-liquid crystalline into the liquid crystalline polymer suppressed the PL emission at 420 nm on photoexcitation at 360 nm, but generated a new PL emission of the non-liquid crystalline polymer at 480 nm. The highest PL intensity at 480 nm, which was 13 times stronger than those of the two polymers before blending, was observed for a blend with 2.0 wt% of the non-liquid crystalline polymer. When the molecules of the blends were aligned on a rubbed polyimide surface by a heating-cooling process, the dichroic ratio and the order parameter were 2.0 and 0.25, respectively. Time-correlated single photon counting (TCSPC) study revealed that the time required for energy transfer between the two chromophores was shortened by 93 ps when the blends were aligned on the rubbed polyimide surface by the heating-cooling process. The thermal treatment also enhanced the energy transfer efficiency by 9%.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.05a
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• pp.87-87
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• 2003

• Journal of the Korean Ceramic Society
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• v.14 no.4
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• pp.230-235
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• 1977

In this paper the conditions of surface crystallization of glass were studied. The basic glass which is apt to crystallize, with $SiO_2$ 72.50, $Al_2O_3$ 5, 00, $Na_2O$ 8.00 $K_2O$ 3.50, CaO 5.00, MgO 3.00, $B_2O_3$ 3.00 Wt% is chosen. The strain point and softening point of this glass is 4$25^{\circ}C$ and 778$^{\circ}C$ each, and between the two temperatures we could get grystal on its surface by immersion in salt baths during some controlled hours. The kind of crystal on the surface of glass was confirmed by X-ray diffraction analysis and the change of the thickness of crystalline layers depending on temperature and time, was surveyed by using optical microscope. The results are as follows; 1. The chloride group is more suitable than sulfate group for the treating salt. 2. In the condition with 50 LiCl.50NaCl at 62$0^{\circ}C$ for 2 hrs and with 50 LiCL.20-30 NaCl.30-20 $CaCl_2$ at 72$0^{\circ}C$ for 15-20 min. we could get the best crystalline layers. 3. The crystal was silica-O and petalite with a little tridymite and nepheline. 4. The thickness of crystalline layers increased with increasement of temperature and time.

• Korean Chemical Engineering Research
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• v.49 no.2
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• pp.218-223
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• 2011

General purpose PAN-based carbon fibers were heat treated up to $1500^{\circ}C$, and analyzed their carbon contents, crstallinity, and crystalline size(Lc). Exothermic characteristics of carbon fiber were investigated in relation to crystallinity, and crystalline size(Lc). Carbon contents, crystallinities, and crystalline size(Lc) of PAN-based carbon fibers increased from 37.08 to 53.69%, and 1.62 to 1.82 nm, respectively as the increase of heat treatment temperature from $1000^{\circ}C$ to $1500^{\circ}C$. Initial surface temperature of fiber tow also linearly increased as the increase of crystallinity, and crystalline size(Lc). Therefore, the crystallinity and crystal size(Lc) of carbon fibers can indirectly and rapidly be estimated by measuring the surface temperature increase.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.87-89
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• 1998

The Y2O3 films on Si(111) was grown by ionized cluster beam depposition (ICBD) in ultrahigh-vacuum (UHV). The acceleration voltage and oxygen ppartial ppressure were fixed at 5 kV and 2$\times$10-5 Torr resppectively. The substrate tempperature was varied from 10$0^{\circ}C$ to $600^{\circ}C$ in order to find the deppendence of crystallinity of Y2O3 films on the substrate tempperature. The crystallinity of the films with the substrate tempperature studied using x-ray diffraction (XRD) and Rutherford backscattering sppectroscoppy (RES). Surface crystallinity and surface morpphology of the films were also investigated using the reflection high-energy electron diffraction (RHEED) and atomic force microscoppe (AFM) resppectively. The films grown at the substrate tempperature below 50$0^{\circ}C$showed the ppoly-crystalline structure of oxygen deficiency. On the contrary the single-crystalline structure was obtained at the substrate tempperature over 50$0^{\circ}C$ and the stochimetry was gradually matched as increasing the substrate tempperature. The surface morpphology showed the increase of the surface roughness as the substrate tempperature was increased upp to 50$0^{\circ}C$ The crystallinity of the film was not good and the minimum channeling yield $\chi$min was measured at 0.91 The stochiometric and high crystallinine film (surface $\chi$min=0.25) was obtained as the substrate tempperature increased upp to 60 $0^{\circ}C$ which indicate the tempperature was sufficient to migrate the depposited atom.

• Carbon letters
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• v.1 no.3_4
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• pp.138-142
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• 2001

The effect of electrochemical surface treatments in KOH chemical solution on microstructures of carbon blacks was investigated in terms of surface functional values and XRD measurements. And their mechanical interfacial properties of the carbon blacks/rubber composites were studied by the composite tearing energy ($G_{IIIC}$). It was found that the development of basic-surface functional groups lead to the significant physical changes of carbon blacks, such as, decrease of the interlayer spacing ($d_{002}$), increase of the crystalline size along c-axis ($L_c$), and increase of degree of crystalline (${\chi}_c$). This treatment is possibly suitable for carbon blacks to be incorporated in a hydrocarbon rubber matrix, resulting in improving the hardness and tearing energy of the resulting composites.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.82-85
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• 2003

The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by Micro-lapping process. The sapphire crystalline wafers were characterized by DCXD(Double Crystal X-ray Diffraction). The sample quality of crystalline sapphire wafer at surface has a FWHM(Full Width at Half Maximum) of 250 arcsec. This value at the sapphire wafer surfaces indicated 0.12${\mu}{\textrm}{m}$ sizes. Surfaces of sapphire wafers were mechanically affected by residual stress and surface default. Also Surfaces roughness of sapphire wafers were measured 2.1 by AFM(Atom Force Microscope).

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.05a
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• pp.42-45
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• 2002

General wheel mark in mono-crystalline silicon wafer finding is able to be expected because it depends on radius ratio and angular velocity ratio of wafer and wheel. The pattern is predominantly determined by the contour of abrasive grits resulting from a relative motion. Although such a wheel mark is made uniform pattern if the process parameters are fixed, sub-surface defect is expected to be distributed non-uniformly because of characteristic of mono-crystalline silicon wafer that has diamond cubic crystal. Consequently it is considered that this phenomenon affects the following process. This paper focused on kinematic analysis of wafer grinding process and simulation program was developed to verify the effect of process variables on wheel mark. And finally, we were able to predict sub-surface defect distribution that considered characteristic of mono-crystalline silicon wafer

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.178-178
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• 1999

Low temperature Si epitaxy can provide flexibility for a device designer to tailor or optimize the device performance. It is better method for controlling the doping thickness, concentration and profile than ion implantation and diffusion. But there is a limited growth thickness in this method. At a given temperature, the film grows epitaxially for a certain limiting thickness(hepi) and becomes amorphous. The transition from crystalline Si to amorphous Si is abrupt. In this study, Si film was deposited by ion beam sputter deposition on Si (0001) above a limiting thickness and measure the strain in the interface between crystalline Si and amorphous Si. The strain was compressive and the maximum value was about 2%.