• 한국재료학회지
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• 제16권9호
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• pp.543-549
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• 2006

Polyimides (PI) are treated with $He/O_2$ and $He/O_2/NF_3$ atmospheric pressure rf dielectric barrier discharge in order to investigate the roles of $NF_3$ that is one of the PI etching gases. Surface changes are analyzed by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and contact angle measurement. The surface roughness of PI and the ratio of C=O, which is hydrophilic functional group, is more increased by $He/O_2/NF_3$ discharge than by $He/O_2$ discharge. The C=O species on the PI surface is increased up to 30 percent with rf power. The surface roughness of PI is increased from 0.4 to 11 nm with rf power. The water drop contact angles on PI, however, are reduced from $65^{\circ}\;to\;9^{\circ}$ by plasma treatment independently of $NF_3$.

• Korean Journal of Chemical Engineering
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• 제35권12호
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• pp.2452-2463
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• 2018

Surface treatment of sol-gel bioglass is required to increase its biomedical applications. In this study, a dielectric barrier discharge (DBD) plasma treatment in atmospheric pressure was performed on the surface of [$SiO_2-CaO-P_2O_5-B_2O_3$] sol-gel derived glass. The obtained bioglass was treated by plasma using discharge current 12 mA with an exposure period for 30 min. The type of discharge can be characterized by measuring the discharge current and applied potential waveform and the power dissipation. Apatite formation on the surface of the DBD-treated and untreated samples after soaking in simulated body fluid (SBF) at $37^{\circ}C$ is characterized by Fourier transform infrared spectroscopy (FTIR), X-Ray diffraction (XRD), inductively coupled plasma (ICP-OES) and scanning electron microscopy coupled with energy dispersive spectroscopy (SEM/EDS). We observed a marked increase in the amount of apatite deposited on the surface of the treated plasma samples than those of the untreated ones, indicating that DBD plasma treatment is an efficient method and capable of modifying the surface of glass beside effectively transforming it into highly bioactive materials.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.210-210
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• 2012

Gas barrier coating from dense thin film deposition has been one of the important applications such as food-packaging and organic display. Especially for food-packaging, plastic container has been widely used due to its low price and high through-put in mass production. However, the plastic container with low surface energy like polypropylene (PP) has been limited to apply gas barrier coating. That is because a gas barrier coating could not adhere to PP due to its too low surface energy and high porosity of PP. In this research, we applied carbon coating consisting of Si and O as an interlayer between silicon oxide (SiOx) and PP. A carbon layer was found to provide better adhesion, which was experimentally proved by oxygen transmission rate (OTR) and SEM images. However, we also found that there is a limitation in the maximum thickness of a carbon layer and SiOx film due to their high stress level. For this conflict, we obtain the optimal thickness of a carbon layer and SiOx film showing optimal gas barrier property.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.279-282
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• 2001

The IBE(ion beam etching)-induced Schottky barrier variation which depends on various etching history related with ion energy, incident angle and etching time has been investigated using voltage-current, capacitance-voltage characteristics of metal-etched silicon contact and morphology of etched surface were studied using AFM(atomic force microscope). For ion beam etched n-type silicons, Schottky barrier is reduced according to ion beam energy. It can be seen that amount of donor-like positive charge created in the damaged layer is proportional to the ion energy. By contrary, for ion beam etched p-type silicons, the Schottky barrier and specific contact resistance are both increased. Not only etching time but also incident angle of ion beam has an effect on barrier height. Taping-mode AFM analysis shows increased roughness RMS(Root-Mean-Square) and depth distribution due to ion bombardment. Annealing in an N$_2$ ambient for 30 min was found to be effective in improving the diode characteristics of the etched samples and minimum annealing temperatures to recover IBE-induced barrier variation were related to ion beam energy.

• 한국진공학회지
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• 제18권3호
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• pp.203-207
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• 2009

반도체 공정에서 기존 금속배선으로 사용되던 Al을 대체하여 사용되는 금속배선으로는 Cu가 그 대안으로 인식되고 있다. 이는 비저항값이 Al ($2.66{\mu}{\Omega}$-cm)보다 Cu ($1.67{\mu}{\Omega}$-cm)가 더 작아 RC 지연 시간 (RC delay time)을 극복하기 때문이다. 그러나 Cu의 녹는점은 $1085^{\circ}C$로 높지만 저온에서 쉽게 Si기판과 반응하는 특성을 가지고 있고, 또한 Si과의 접착력이 좋이 않는 것으로 알려져 있다. 이러한 이유로 Cu와 Si과의 반응을 방지하고 접착력을 높이기 위하여 확산방지막의 연구가 꾸준히 진행되고 있다. 본 연구그룹에서는 Cu의 확산을 방지하기 위하여 W-C-N의 확산방지막에 대하여 연구하여 왔다. 지금까지 보고된 연구 결과에 의하면 W-C-N (tungsten-carbon-nitrogen) 확산방지막은 고온에서도 Cu와 Si과의 확산을 효과적으로 방지하는 것으로 보고되었다. 이 논문에서는 W-C-N 확산방지막에 질소(N) 비율을 다르게 증착하여 지금까지 진행한 연구 결과를 기반으로 새로이 Cu의 전자거동현상(Electromigration)에 대하여 연구하였고, 고온 열처리 과정에서 박막의 표면강도 (Surface hardness)를 Nano-Indenter system을 이용하여 연구하였다. 이러한 연구를 통하여 박막내 질소가 포함된 W-C-N 확산방지막이 Cu의 전자거동에 더 안정적이며, 고온 열처리 과정에서도 표면 강도가 더 안정한 연구 결과를 획득하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1225-1228
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• 2005

Barrier ribs in the plasma display panel(PDP) function to maintain the discharge space between the glass plates as well as to prevent optical crosstalk. Patterning of barrier ribs is one of unique processes for making PDP. In this work photosensitive barrier rib pastes were prepared by incorporating binder polymer, solvent, functional monomers photoinitiator, and barrier rib powder of which surface was treated with fumed silica particles. Study on the function of materials for the barrier rib paste were undertaken. After optimization of paste formulation and photolithographic process, it was found that photolithographic patterning of barrier ribs with photosensitive barrier rib green sheet could be used in the fabrication of high resolution PDP.

• 공학논문집
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• 제6권2호
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• pp.33-38
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• 2004

To investigate the reliability of the MTJs on the roughness of insulating tunnel barrier, we prepared two MTJs with the different uniformity of barrier thickness. Namely, the one has uniform insulating barrier thickness; the other has non-uniform insulating barrier thickness as compared to different thing. As to depositing amorphous layer CoZrNb under the pinning layer IrMn, we achieved MTJ with uniform barrier thickness. Toinvestigate the reliability of the MTJs dependent on the bottom electrode, time-dependent dielectric breakdown (TDDB) measurements were carried out under constant voltage stress. The Weibull fit of out data shows clearly that $t_{BD}$ scales with the thickness uniformity of MTJs tunnel barrier. Assuming a linear dependence of log($t_{BD}$) on stress voltages, we obtained the lifetime of $10^4$years at a operating voltage of 0.4 V at MTJs comprising CoNbZr layers. This study shows that the reliabilityof new MTJs structure was improved due to the ultra smooth barrier, because the surface roughness of the bottom electrode influenced the uniformity of tunnel barrier.

• 한국전기전자재료학회논문지
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• 제17권1호
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• pp.70-74
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• 2004

We investigated transmittance, surface characteristics, and resistivity according to bending of ITO(indium tin oxide) film with four other multi -harrier film). Transmission data of ITO film with four ITO films showed there was about large 90％ transmission above 550nm wavelength at three multi-barrier structures. But, both-side hard coated structure showed relatively low 75％ transmission above 550nm wavelength. And, surface images measured from SEM (scanning electron microscope) showed both-side hard coated structure have a tendency of more roughness. Also, resistivity change of four other multi-barrier film showed there was the lowest change at one-side hardcoated structure. Subsequently, with result of resistivity change according to position, we knew the resistivity change of the center increased rapidly than that of the edge.

• 한국표면공학회지
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• 제37권3호
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• pp.185-190
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• 2004

Plasma Display Panel is a display device emitting fluorescent light from gas discharge between a front and a rear panel sealed together. Front and rear panel have multitude of film layers and barrier ribs in the rear panel has the largest area so releasing various gases and affecting light emitting characteristics and lifetime. The remaining gases in a barrier rib were studied by thermal desorption analysis up to $400^{\circ}C$ and main gases were $H_2$ $H_2$O, CO. During sustaining at $300^{\circ}C$, the outgassing rates from other gases were decreased but$ H_2$ kept constantly increasing until 1 hour, which can be originated from the dissociation of organics remained in the inside of barrier rib material. In $H_2$O, two distinct peaks were observed: desorption from physically adsorbed one at $l00^{\circ}C$ and from chemically adsorbed one $400^{\circ}C$. The result can be utilized in interpretation of electronic and optical characteristics and evacuation process control of PDP

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2011년도 춘계학술대회 및 Fine pattern PCB 표면 처리 기술 워크샵
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• pp.135-136
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• 2011

본 연구에서는 실리콘 기판위의 형성된 AAO (Anodic Aluminum Oxide)의 barrier layer를 $Cl_2/BCl_3$ gas mixture에서 Neutral Beam Etching (NBE)과 Ion Beam Etching (IBE)로 각각 식각한 후 그 결과를 비교하였다. 이온빔의 경우 나노사이즈의 AAO pore의 charging에 의해 pore 아래쪽의 위치한 barrier layer를 어떤 식각조건에서도 제거하지 못하였다. 하지만, charging effect가 없고, 높은 중성화율을 나타내는 low angle forward reflected 방식의 neutral beam etching (NBE)에서는 $BCl_3$-rich $Cl_2/BCl_3$ gas mixture인 식각조건에서 AAO pore에 휘발성 $BO_xCl_y$를 형성하면서 barrier layer를 제거할 수 있었다.