• 제목/요약/키워드: supersonic jet

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3차원 PIV 기법을 사용한 벤트혼합기가 초음속 연료-공기 혼합에 미치는 특성 연구 (Characteristic Study on Effect of the Vent Mixer to Supersonic Fuel-Air Mixing with Stereoscopic-PIV Method)

  • 김채형;정인석;최병일
    • 한국추진공학회지
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    • 제16권4호
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    • pp.50-56
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    • 2012
  • 벤트 혼합기는 혼합기 후류에 존재하는 재순환 영역으로 공기를 유입시켜 연료-공기 혼합을 증대시키는 혼합기이다. Stereoscopic PIV기법을 통해 얻은 3차원 속도, 와류, 난류운동에너지를 토대로 계단형 혼합기를 기본 모델로 하여 벤트 혼합기의 성능을 분석하였다. 벤트 혼합기는 두터운 전단층으로 인해 높은 침투거리를 보였으며, 난류운동에너지는 주로 주유동과 제트유동의 경계면을 따라 분포하였다. 이 난류 영역은 혼합영역 내에서 활발히 물질전달을 일으키며, 혼합 증대를 가져온다.

보간법을 이용한 옥타브 밴드폭 음향 하중 SPL의 시계열 데이터 생성 (Generation of Time Series Data from Octave Bandwidth SPL of Acoustic Loading Using Interpolation Method)

  • 고은수;김인걸;전민혁;조현준;박재상;김민성
    • 한국군사과학기술학회지
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    • 제24권1호
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    • pp.1-11
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    • 2021
  • Thermal protection system structures such as double-panel structures are used on the skin of the fuselage and wings to prevent the transfer of high heat into the interior of an high supersonic/hypersonic aircraft. The thin-walled double-panel skin can be exposed to acoustic loads by high power engine noise and jet flow noise, which can cause sonic fatigue damage. In order to predict the fatigue life of the skin, the octave bandwidth SPL should be calculated as narrow bandwidth PSD or acoustic load history using interpolation method. In this paper, a method of converting the octave bandwidth SPL acoustic load into a narrow bandwidth PSD and reconstructed acoustic load history was investigated. The octave bandwidth SPL was converted to the narrow bandwidth PSD using various interpolation methods such as flat, log and linear scale, and the probabilistic characteristics and fatigue damage results were compared. It was found that average error of fatigue damage index by the log scale interpolation method was relatively small among three methods.

$MoSi_2$ 금속간화합물 복합재료의 미세구조와 방전가공특성 (Microstructure and EDM Processing of $MoSi_2$ Intermetallic Composite)

  • 윤한기;이상필;윤경욱;김동현
    • 한국해양공학회:학술대회논문집
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    • 한국해양공학회 2002년도 춘계학술대회 논문집
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    • pp.23-28
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    • 2002
  • This paper describes the machining characteristics of the $MoSi_2$ based composites by electric discharge drilling with various tubular electrodes, besides, Hardness characteristics and microstructures of $Nb/MoSi_2$ laminate composites were evaluated from the variation of fabricating conditions such as preparation temperature, applied pressure and pressure holding time. $MoSi_2$ -based composites has been developed in new materials for jet engine of supersonic-speed airplanes and gas turbine for high- temperature generator. Achieving this objective may require new hard materials with high strength and high temperature-resistance. However, With the exception of grinding, traditional machining methods are not applicable to these new materials. Electric discharge machining (EDM) is a thermal process that utilizes a spark discharge to melt a conductive material, the tool electrode being almost non-unloaded, because there is no direct contact between the tool electrode and the workpiece. By combining a nonconducting ceramics with more conducting ceramic it was possible to raise the electrical conductivity. From experimental results, it was found that the lamination from Nb sheet and $MoSi_2$ powder was an excellent strategy to improve hardness characteristics of monolithic $MoSi_2$. However, interfacial reaction products like (Nb, Mo)$SiO_2$ and $Nb_2Si_3$ formed at the interface of $Nb/MoSi_2$ and increased with fabricating temperature. $MoSi_2$ composites which a hole drilling was not possible by the conventional machining process, enhanced the capacity of ED-drilling by adding $NbSi_2$ relative to that of SiC or $ZrO_2$ reinforcements.

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Growth of Hexagonal Boron Nitride Thin Films on Silicon Using a Single Source Precursors

  • Boo, Jin-Hyo;Lee, Soon-Bo;Casten Rohr;Wilson Ho
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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    • pp.120-120
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    • 1998
  • Boron nitride (BN) films have attracted a growing interest for a variety of t technological applications due to their excellent characteristics, namely hardness, c chemical inertness, and dielectrical behavior, etc. There are two crystalline phases 1551; of BN that are analogous to phases of carbon. Hexagonal boron nitride (h-BN) has a a layered s$\sigma$ucture which is spz-bonded structure similar to that of graphite, and is t the stable ordered phase at ambient conditions. Cubic boron nitride (c-BN) has a z zinc blende structure with sp3-bonding like as diamond, 따ld is the metastable phase a at ambient conditions. Among of their prototypes, especially 삼Ie c-BN is an i interesting material because it has almost the same hardness and thermal c conductivity as di없nond. C Conventionally, significant progress has been made in the experimental t techniques for synthesizing BN films using various of the physical vapor deposition 밍ld chemical vapor deposition. But, the major disadvantage of c-BN films is that t they are much more difficult to synthesize than h-BN films due to its narrow s stability phase region, high compression stress, and problem of nitrogen source c control. Recent studies of the metalorganic chemical vapor deposition (MOCVD) of I III - V compound have established that a molecular level understanding of the d deposition process is mandatory in controlling the selectivity parameters. This led t to the concept of using a single source organometallic precursor, having the c constituent elements in stoichiometric ratio, for MOCVD growth of 삼Ie required b binary compound. I In this study, therefore, we have been carried out the growth of h-BN thin f films on silicon substrates using a single source precursors. Polycrystalline h-BN t thin films were deposited on silicon in the temperature range of $\alpha$)() - 900 $^{\circ}$C from t the organometallic precursors of Boron-Triethylamine complex, (CZHs)3N:BRJ, and T Tris(dimethylamino)Borane, [CH3}zNhB, by supersonic molecular jet and remote p plasma assisted MOCVD. Hydrogen was used as carrier gas, and additional nitrogen w was supplied by either aDlIDonia through a nozzle, or nitrogen via a remote plasma. T The as-grown films were characterized by Fourier transform infrared spectroscopy, x x-ray pthotoelectron spectroscopy, Auger electron spectroscopy, x-ray diffraction, t transmission electron diffraction, optical transmission, and atomic force microscopy.roscopy.

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