• The Transactions of The Korean Institute of Electrical Engineers
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• 제56권12호
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• pp.2078-2083
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• 2007

We have analyzed operating characteristics of transformer-type superconducting fault current limiter (SFCL) according to the serial or parallel connections of secondary coils with $YBa_2Cu_3O_7$ (YBCO) thin films. The turn ratio between the primary and secondary coils was 63:21. Transformer-type SFCL using a transformer with secondary winding of serial or parallel coils could reduce the unbalanced quench caused by differences of the critical current density between YBCO thin films. We found that transformer-type SFCL having serial or parallel connections induced simultaneous quench between the superconducting units. The limiting current in the transformer-type SFCL with a parallel connection was lowered to 30 % compared to the SFCL with a serial connection. In the meantime, when the currents generated in the superconducting units were similar, the voltage value in the parallel connection was 60 % as low as that in the serial connection. However, the voltage generated in the primary winding was some higher. In conclusion, we found that transformer-type SFCL with parallel connection of secondary coils was more effective in fault current limiting characteristics and in the reduction of the consumption power for superconducting units compared to those of the transformer-type SFCL with serial connection of secondary coils.

• Progress in Superconductivity and Cryogenics
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• 제16권4호
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• pp.36-39
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• 2014

We report on the superconducting and structural characteristics of Pb-based alloy ($Pb_{0.9}In_{0.1}$, $Pb_{0.8}In_{0.2}$ and $Pb_{0.85}Bi_{0.15}$) thin films, depending on the film deposition rate. The maximum critical magnetic field strength of $Pb_{0.85}Bi_{0.15}$ is almost six times larger than that of $Pb_{0.9}In_{0.1}$, and more rapid growth of the film enhances the critical magnetic field strength even for the same alloy material. Scanning electron microscopy inspection indicates that lower deposition rate condition is vulnerable to the formation of void structure in the film. Topographic images using atomic force microscopy are useful to optimize the deposition condition for the growth of smooth superconducting film. Our work can be utilized for future studies on hybrid superconducting devices using low-dimensional nanostructures.

• Journal of the Korean Ceramic Society
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• 제27권2호
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• pp.249-255
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• 1990

High Tc Supperconducting thin films were fabricated by rf magnetron sputtering method. We have successfully controlled the compositions of films by adding sintered CuO pellets on YBa2Cu3O7-x single target. High Tc thin films with large grian size and good crystal habit were obtained by rapid thermal annealing process. The films deposited on SrTiO3(100) single crystal substrate indicated the existence of c-axis prefered orientation confirmed by XRD and SEM analysis. The Tc, zero's of sharp resistive transition for rapid annealed films deposited on polycrystalline YSZ substrate and on SrTiO3(100) single crystal substrate were 79K and 88K, respectively.

• Progress in Superconductivity and Cryogenics
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• 제18권1호
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• pp.33-36
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• 2016

Suppression of the superconducting transition temperature ($T_c$) of NbN thin films in superconductor/ferromagnet multilayers has been investigated. Both superconducting NbN and ferromagnetic FeN layers were deposited on thermally oxidized Si substrate at room temperature by using reactive magnetron sputtering in an $Ar-N_2$ gas mixture. The thickness of FeN films was fixed at 20 nm, while the thickness of NbN films was varied from 3 nm to 90 nm. $T_c$ suppression was clearly observed in NbN layers up to 70 nm thickness when NbN layer was in proximity with FeN layer. For a given thickness of NbN layer, the magnitude of $T_c$ suppression was increased in the order of Si/FeN/NbN, Si/NbN/FeN, and Si/FeN/NbN/FeN structure. This result can be used to design a spin switch whose operation is based on the proximity effect between superconducting and ferromagnetic layers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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• pp.26-30
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• 1995

We describe the preparation and characterization of epitaxial thin films made with high temperature superconductor, $YBa_2Cu_3O_{7-\delta}$. The influence of processing parameters for YBCO thin films on MgO substrates in-situ grown by the pulsed laser deposition, including parameters of a laser beam energy, oxygen pressure, substrate temperature, target-substrate dis-tance is discussed. The characteristics of YBCO thin films were analyzed by using XRD, R-T measurement, AFM, crosssectional TEM, and RBS. For examples of microwave device applications, The fabrication and characterization of the microstrip lowpass filter and bandpass filter are also presented.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.222-225
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• 2000

BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $Po_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$ (onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a smd amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in d of the obtained films.

• The Transactions of the Korean Institute of Electrical Engineers B
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• 제49권9호
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• pp.584-589
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• 2000

We fabricated resistive superconducting fault current limiters (SFCL) based on YBCO thin films grown on a 2-inch diameter Al2O3 substrate. The current limiting element was 1 mm wide and 260mm long meander line prepared by standard photolithography. The minimum quench current of the current limiting element was about 8 Apeak. This SFCL sucessfully controlled the fault current below 14.3 Apeak at the voltage of 100 Apeak which is otherwise to increase up to 141 Apeak. The quench completion time was less than 3 msec. The temperature of the current limiting element rose to about 200 K in 3 cycles after fault. The SFCL showed reproducible quench during hundreds times of repeated experiments.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.226-229
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• 2000

We fabricated thin film superconducting fault current limiters based on YBa$_2$Cu$_3$O$_{7}$ thin films and investigated the distribution of quench progress in the limiters. The limiters were tested with simulated fault currents. Quench progress depended significantly on the position in the limiter with respect to electrodes as well as the fault current magnitude. The heat transfer from limiter meander lines to electrodes explains these results.s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.244-247
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• 2002

NdBaCuO thin films were prepared on $SrTiO_{3}$ substrates by RF magnetron sputtering. These as-grown films were classified into 3type. The resistivity of the deposited films are usually lower than of the YBCO film. The Tc (onset) and Tc (R=0) in the optimized thin films are as high as 90 and 80K, respectively. These as-grown films are highly uniform and semi-trans parent and have a room temperature resistivity of $0.3m{\Omega}cm$.

• Proceedings of the Materials Research Society of Korea Conference
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.121-121
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• 2003

NiO thin films are very attractive for use as an antiferromagnetic layer, p-type transparent conducting films, in electrochromic devices and functional sensor layer for chemical sensors, due to their excellent chemical stability, as well as optical, electrical and magnetic properties. In addition, (100)- and (111)-oriented NiO films can be used as buffer layers on which to deposit other oriented oxide films, such as c-axis-oriented perovskite-type ferromagnetic films and superconducting films, because of the similarity in symmetry of oxygen ion lattice and lattice constants between the NiO films and the oriented oxide films. Thus, controlling the crystallographic orientation and surface roughness of the NiO films for a buffer layer are very important.