• Title/Summary/Keyword: subwavelength gratings

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Angle-sensitive Pixels Based on Subwavelength Compound Gratings

  • Meng, Yunlong;Hu, Xuemei;Yang, Cheng;Shen, Xinyu;Cao, Xueyun;Lin, Lankun;Yan, Feng;Yue, Tao
    • Current Optics and Photonics
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    • v.6 no.4
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    • pp.359-366
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    • 2022
  • In this paper, we present a new design for angle-sensitive pixels (ASPs). The proposed ASPs take advantage of subwavelength compound gratings to capture the light angle, which enables pixel size to reach the wavelength scale of 0.7 ㎛ × 0.7 ㎛. The subwavelength compound gratings are implemented by the wires of the readout circuit inherent to the standard complementary metal-oxide-semiconductor manufacturing process, thus avoiding additional off-chip optics or post-processing. This technique allows the use of two pixels for horizontal or vertical angle detection, and can determine the light's angle in the range from -45° to +45°. The proposed sensor enables surface-profile reconstruction of microscale samples using a lensless imaging system.

Beam focusing by a single subwavelength metal slit surrounded by chirped dielectric surface gratings (금속 슬릿 주변에 유전체 chirped grating을 배열함으로써 구현한 beam focusing)

  • Kim, Se-Yun;Park, Jeong-Hyeon;Im, Yong-Jun;Kim, Hwi;Lee, Byeong-Ho
    • Proceedings of the Optical Society of Korea Conference
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    • 2007.07a
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    • pp.255-256
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    • 2007
  • We propose a novel method for the beam focusing by a single subwavelength metal slit surrounded by chirped dielectric surface gratings. In the proposed method, the period of each grating is chirped to make a focused beam at the desired position. Design of the grating structures for optimal beam focusing and the analysis of the field distribution are conducted based on the rigorous coupled wave analysis (RCWA). It is shown that the focused beam is formed at 1.5${\mu}m$ from the metal substrate and its full width at half maximum (FWHM) is 411nm.

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효율적인 무반사 특성을 갖는 주기적인 실리콘 계층 나노구조 제작 연구

  • Lee, Su-Hyeon;Im, Jeong-U;Gwan, Sang-U;Kim, Jeong-Tae;Yu, Jae-Su
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.312.2-312.2
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    • 2014
  • 실리콘은 광센서, 태양전지, 발광다이오드 등 광소자 응용 분야에서 널리 사용되고 있는 물질이다. 그러나 실리콘의 높은 굴절율(n~3.5)은 표면에서 약 30% 이상의 Fresnel 반사를 발생시켜 소자의 효율을 감소시키는 원인이 된다. 따라서, 반사손실을 줄이기 위해서는 실리콘 표면에 효율적인 무반사 코팅을 필요로 한다. 기존의 단일 혹은 다중 박막을 이용한 무반사 코팅 기술은 물질간 열팽창계수의 불일치, 접착력 문제, 박막 두께 조절 및 적합한 굴절율을 갖는 물질 선택 어려움 등의 단점을 지니고 있다. 최근, 이러한 무반사 코팅 기술의 대안으로 곤충 눈 구조를 모방한 나노크기의 서브파장 격자구조 (subwavelength gratings, SWGs)에 대한 연구가 활발히 이루어지고 있다. 이러한 SWGs 구조는 공기와 반도체 표면 사이에 점진적, 선형적으로 변화하는 유효굴절율을 갖기 때문에, 광대역 파장영역뿐만 아니라 다양한 각도에서 입사하는 빛에 대해서도 효과적으로 Fresnel 표면 반사를 낮출 수 있다. 본 연구에서는 실리콘 기판 표면 위에 효율적인 무반사 특성을 갖는 계층적 SWGs 나노구조를 제작하기 위해, 레이저간섭리소그라피 및 열적응집금속 입자를 이용한 식각 마스크 패터닝 방법과 유도결합플라즈마 식각 공정을 이용하였다. 제작된 무반사 실리콘 SWGs 나노구조의 표면 및 식각 프로파일은 전자주사현미경으로 관찰하였고, 표면 접촉각 측정 장비를 이용하여 샘플 표면의 젖음성을 확인하였다. 제작된 샘플의 광학적 특성을 조사하기 위해 UV-vis-NIR 스펙트로미터와 엘립소미터 측정 시스템들을 이용하였다.

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Implementation of Highly Efficient GMR Color Filter using Asymmetric Si3N4 Gratings (비대칭 Si3N4 격자를 사용한 고효율 GMR 컬러 필터의 구현)

  • Ho, Kwang-Chun
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.17 no.1
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    • pp.225-230
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    • 2017
  • In this paper, a highly efficient GMR(guided-mode resonant) color filter is proposed and implemented. The GMR color filter consists of $Si_3N_4/air$ layers containing complementary fixed and mobile gratings. The device is designed using RETT(rigorous equivalent transmission-line theory) and a grating structure operating in subwavelength. The numerical result reveals that the color filter has a tuning capability of about 35 nm over the $0.45{\mu}m{\sim}0.55{\mu}m$ range for blue-green color and across $0.6{\mu}m{\sim}0.7{\mu}m$ range for red color. Furthermore, The color filters have a spectral bandwidth of about 8 nm with efficiencies of 99%, 98%, and 99% at the center wavelength of blue, green, and red color, respectively, and these are higher efficiencies than reported in the literature previously.

Color Filter Based on a Sub-Wavelength Patterned Poly-Silicon Grating Fabricated using Laser Interference Lithography (광파장 이하의 주기를 갖는 다결정 실리콘 격자 기반의 컬러필터)

  • Yoon, Yeo-Taek;Lee, Hong-Shik;Lee, Sang-Shin;Kim, Sang-Hoon;Park, Joo-Do;Lee, Ki-Dong
    • Korean Journal of Optics and Photonics
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    • v.19 no.1
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    • pp.20-24
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    • 2008
  • A color filter was proposed and demonstrated by incorporating a subwavelength patterned 1-dimensional grating in poly silicon. It was produced by employing the laser interference lithography method, providing much wider effective area compared to the conventional e-beam lithography. A $SiO_2$ layer was introduced on top of the silicon grating layer as a mask for the etching of the silicon, facilitating the etching of the silicon layer. It was theoretically found that the selectivity of the filter was also improved thanks to the oxide layer. The parameters for the designed device include the grating pitch of 450 nm, the grating height of 100 nm and the oxide-layer height of 200 nm. As for the fabricated filter, the spectral pass band corresponded to the blue color centered at 470 nm and the peak transmission was about 40%. Within the effective area of $3{\times}3mm^2$, the variation in the relative transmission efficiency and in the center wavelength was less than 10% and 2 nm respectively. Finally, the influence of the angle of the incident beam upon the transfer characteristics of the device was investigated in terms of the rate of the relative transmission efficiency, which was found to be equivalent to 1.5%/degree.