• 한국분말재료학회지
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• 제29권4호
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• pp.283-290
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• 2022

A Cu-15Ag-5P filler metal (BCuP-5) is fabricated on a Ag substrate using a high-velocity oxygen fuel (HVOF) thermal spray process, followed by post-heat treatment (300℃ for 1 h and 400℃ for 1 h) of the HVOF coating layers to control its microstructure and mechanical properties. Additionally, the microstructure and mechanical properties are evaluated according to the post-heat treatment conditions. The porosity of the heat-treated coating layers are significantly reduced to less than half those of the as-sprayed coating layer, and the pore shape changes to a spherical shape. The constituent phases of the coating layers are Cu, Ag, and Cu-Ag-Cu3P eutectic, which is identical to the initial powder feedstock. A more uniform microstructure is obtained as the heat-treatment temperature increases. The hardness of the coating layer is 154.6 Hv (as-sprayed), 161.2 Hv (300℃ for 1 h), and 167.0 Hv (400℃ for 1 h), which increases with increasing heat-treatment temperature, and is 2.35 times higher than that of the conventional cast alloy. As a result of the pull-out test, loss or separation of the coating layer rarely occurs in the heat-treated coating layer.

• 센서학회지
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• 제15권2호
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• pp.148-152
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• 2006

This paper describes the fabrication of SiCN microstructures for super-high temperature MEMS using photopolymerization of pre-ceramic polymer. In this work, polysilazane liquide as a precursor was deposited on Si wafers by spin coating, microstructured and solidificated by UV lithography, and removed from the substrate. The resulting solid polymer microstructures were cross-linked under HIP process and pyrolyzed to form a ceramic of withstanding over $1400^{\circ}C$. Finally, the fabricated SiCN microstructures were annealed at $1400^{\circ}C$ in a nitrogen atmosphere. Mechanical characteristics of the SiCN microstructure with different fabrication process conditions were evaluated. The elastic modules, hardness and tensile strength of the SiC microstructure implemented under optimum process condtions are 94.5 GPa, 10.5 GPa and 11.7 N/min, respectively. Consequently, the SiCN microstructure proposed in this work is very suitable for super-high temperature MEMS application due to very simple fabrication process and the potential possiblity of sophisticated mulitlayer or 3D microstructures as well as its good mechanical properties.

• 한국세라믹학회지
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• 제48권1호
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• pp.106-109
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• 2011

In order to fabricate 8YSZ thick film by silk screen printing, YSZ(yttria-stabilized zirconia) commercial powder was used as starting materials. Paste for screen printing was made by mixing 8YSZ powder and organic vehicles. 8YSZ thick film was formed on $Al_2O_3$ substrate. The crystal structure, and microstructure were investigated. Grain size of 8YSZ was increased with increasing calcination temperature and rapid grain growth was shown after calcination at $1300^{\circ}C$. Microstructure showed the mixture of large and small grain size after $1400^{\circ}C$ sintering. Shrinkage rate of 8YSZ thick film sintered at $1400^{\circ}C$ was more than 40%.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.392-393
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• 2006

This paper describes the fabrication of SiCN microstructures for super-high temperature MEMS using photopolymerization of pre-ceramic polymer. In this work. polysilazane liquide as a precursor was deposited on Si wafers by spin coating. microstructured and solidificated by UV lithography. and removed from the substrate. The resulting solid polymer microstructures were cross-linked under HIP process and pyrolyzed to form a ceramic of withstanding over $1400^{\circ}C$. Finally, the fabricated SiCN microstructures were annealed at $1400^{\circ}C$ in a nitrogen atmosphere. Mechanical characteristics of the SiCN microstructure with different fabrication process conditions were evaluated. The elastic modules. hardness and tensile strength of the SiC microstructure implemented under optimum process conditions are 94.5 GPa, 10.5 GPa and 11.7 N/min, respectively. Consequently, the SiCN microstructure proposed in this work is very suitable for super-high temperature MEMS application due to very simple fabrication process and the potential possiblity of sophisticated multlayer or 3D microstructures as well as its good mechanical properties.

• 한국전기전자재료학회논문지
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• 제13권10호
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• pp.828-833
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• 2000

Growth characteristics and microstructure of AIN thin films grown by plasma assisted molecular beam epitaxy on Si substrates have been investigated. Growing temperature and substrate orientation were chosen as major variables of the experiment. Reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy/diffraction (TEM/TED) techniques were employed to characterize the micorstructure of the films. On Si(100) substrates, AlN thin films were grown along the hexagonal c-axis preferred orientation at temperature range 850-90$0^{\circ}C$. However on Si(111), the AlN films were epitaxially grown with directional coherency in AlN(0001)/Si(111), AlN(1100)/Si(110), and AlN(1120)/Si(112) at 85$0^{\circ}C$ and the epitaxial coherencry seemed to be slightly distorted with increasing temperature. The microstructure of AlN thin films on Si(111) substrates showed that the films include a lot of crystal defects and there exist micro-gaps among the columns.

• Transactions on Electrical and Electronic Materials
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• 제11권1호
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• pp.33-36
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• 2010

$MgF_2$ is a current material used for optical applications in the ultraviolet and deep ultraviolet range. Process variables for manufacturing $MgF_2$ thin film were established in order to clarify the optimum conditions for the growth of the thin film, dependant upon the process conditions, and then by changing a number of the vapor deposition conditions, substrate temperatures, and heat treatment conditions, the structural and optical characteristics were measured. Then, optimum process variables were thus derived. Nevertheless, modern applications still require improvement in the optical and structural quality of the deposited layers. In the present work, in order to understand the composition and microstructure of $MgF_2$, single layers grown on a slide glass substrate using an Electron beam Evaporator (KV-660), were analyzed and compared. The surface substrate temperature, having an effect on the quality of the thin film, was changed from $200^{\circ}C$ to $350^{\circ}C$ at intervals of $50^{\circ}C$. The heat treatment temperature, which also has an effect on the thin film, was changed from $200^{\circ}C$ to $400^{\circ}C$ at intervals of $50^{\circ}C$. The physical properties of the thin film were investigated at various fabrication conditions, such as the substrate temperature, the heat treatment temperature, and the heat treatment time, by X-ray diffraction, and field emission-scanning electron microscopy.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 추계학술대회 논문집
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• pp.106-108
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• 2003

We fabricated Ni and Ni-W alloys for use as a substrate in YBCO coated conductor applications and evaluated the effect of W in Ni on texture, microstructure and surface morphology, and hardness of substrate. Pure Ni, Ni-2 at.％W, and Ni-5at.％W alloy substrates were prepared by plasma arc melting, cold rolling, and the recrystallization heat treatment at various temperature (700- 130$0^{\circ}C$). It was observed that Ni-W alloy substrates had stronger cube texture and maintained it at higher annealing temperature, compared to pure Ni substrate : The full-width at half- maximums of in-plane texture was 13.40$^{\circ}$ for Ni substrate and 4.42$^{\circ}$-5.57$^{\circ}$ for Ni-W substrate annealed at 100$0^{\circ}C$. In addition, it was observed that the Ni-W substrate had smaller grain size, shallower boundary depth, and higher hardness, compared to those of pure Ni substrate.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.95.1-95.1
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• 2010

Transparent conducting ZnO films were deposited to apply DSSC Substrate on glass substrates at $500^{\circ}C$ by ionbeam-assisted deposition. Crystallinity, microstructure, surface roughness, chemical composition, electrical and optical properties of the films were investigated as a function of deposition parameters such as ion energy, and substrate temperature. The microstructure of the polycrystalline ZnO films on the glass substrate were closely related to the oxygen ion energy, arrival ratio of oxygen to Zinc Ion bombarded on the growing surface. The main effect of energetic ion bombardment on the growing surface of the film may be divided into two categories; 1) the enhancement of adatom mobility at low energetic ion bombardment and 2) the surface damage by radiation damage at high energetic ion bombardment. The domain structure was obtained in the films deposited at 300 eV. With increasing the ion energy to 600 eV, the domain structure was changed into the grain structure. In case of the low energy ion bombardment of 300 eV, the microstructure of the film was changed from the grain structure to the domain structure with increasing arrival ratio. At the high energy ion bombardment of 600 eV, however, the only grain structure was observed. The electrical properties of the deposited films were significantly related to the change of microstructure. The films with the domain structure had larger carrier concentration and mobility than those with the grain structure, because the grain boundary scattering was reduced in the large size domains compared with the small size grains. The optical transmittance of ZnO films was dependent on a surface roughness. The ZnO films with small surface roughness, represented high transmittance in the visible range because of a decreased light surface scattering. By varying the ion energy and arrival ratio, the resistivity and optical transmittance of the films were varied from $1.1{\times}10^{-4}$ to $2.3{\times}10^{-2}{\Omega}cm$ and from 80 to 87%, respectively. The ZnO film deposited at 300 eV, and substrate temperature of $500^{\circ}C$ had the resistivity of $1.1{\times}10^{-4}{\Omega}cm$ and optical transmittance of 85% in visible range. As a result of experiments, we provides a suggestition that ZnO thin Films can be effectively used as the DSSC substrate Materials.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.86-86
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• 2003

Copper has attracted much attention in the deep submicron ULSI metallization process as a replacement for aluminum due to its lower resistivity and higher electromigration resistance. Electroless copper deposition method is appealing because it yields conformal, high quality copper at relatively low cost and a low processing temperature. In this work, it was investigated that effect of the microstructure of the substrate on the electroless deposition. The mechanism of the nucleation and growth of the palladium nuclei during palladium activation was proposed. Electroless copper deposition on TiN barriers using glyoxylic acid as a reducing agent was also investigated to replace toxic formaldehyde. Furthermore, electroless copper deposition on TaN$\sub$x/ barriers was examined at various nitrogen flow rate during TaN$\sub$x/ deposition. Finally, it was investigated that the effect of plasma treatment of as-deposited TaN$\sub$x/ harriers on the electroless copper deposition.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2005년도 동계학술연구발표회 및 2차 아시안포럼
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• pp.188-189
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• 2005