• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.636-636
• /
• 2013

Since first discovery of strong Raman spectrum of molecules adsorbed on rough noble metal, surface enhanced Raman scattering (SERS) has been widely used for detection of molecules with low concentration. Surface plasmons at noble metal can enhance Raman spectrum and using Au nanostructures as substrates of SERS has advantages due to it has chemical stability and biocompatibility. However, the photoluminescence (PL) background from Au remains a problem because of obtaining molecular vibration information. Recently, graphene, two-dimensional atomic layer of carbon atoms, is also well known as PL quenchers for electronic and vibrational excitation. In this study, we observed SERS of single layer graphene on or under monolayer of Au nanoparticles (NPs). Single layer graphene is grown by chemical vapor deposition and transferred onto or under the monolayer of Au NPs by using PMMA transfer method. Monolayer of Au NPs prepared using Langmuir-Blodgett method on or under graphene surface provides closed and well-packed monolayer of Au NPs. Scanning electron microscopy (SEM) and Raman spectroscopy (WItec, 532 nm) were performed in order to confirm effects of Au NPs on enhanced Raman spectrum. Highly enhanced Raman signal of graphene by Au NPs were observed due to many hot-spots at gap of closed well-packed Au NPs. The results showed that single layer graphene provides larger SERS effects compared to multilayer graphene and the enhancement of the G band was larger than that of 2D band. Moreover, we confirm the appearance of D band in this study that is not clear in normal Raman spectrum. In our study, D band appearance is ascribed to the SERS effect resulted from defects induced graphene on Au NPs. Monolayer film of Au NPs under the graphene provided more highly enhanced graphene Raman signal compared to that on the graphene. The Au NPs-graphene SERS substrate can be possibly applied to biochemical sensing applications requiring highly sensitive and selective assays.

• Korean Journal of Optics and Photonics
• /
• v.14 no.3
• /
• pp.266-271
• /
• 2003

The reflectance spectrum of optical films thicker than a few microns shows an intensity oscillation due to interference. Since the spectral period of the oscillation is inversely related to film thickness, the thickness of an optical film can be determined from the spectral frequency of the oscillation. For rapid data processing, the spectral frequency is obtained by use of a Fast Fourier Transformation technique. The conventional method of applying a Fast Fourier Transformation to the reflectance spectrum versus photon energy is modified so as to clear the ambiguity in choosing the proper effective refractive index value and to prevent the broadening of the Fourier transformed peak due to the refractive index dispersion. This technique of modified Fast Fourier Transformation is suggested by the authors for the first time to their knowledge. From the analysis of the calculated reflectance spectrum of a 30-${\mu}{\textrm}{m}$-thick dielectric film. it is shown to improve the accuracy in determining film thickness by a great amount. The improved accuracy of the modified Fast Fourier Transformation is also confirmed from the analysis of the reflectance spectra of a sample with 80-${\mu}{\textrm}{m}$-thick cover layer and 13-${\mu}{\textrm}{m}$-thick spacer layer on a PC substrate.

• Journal of Sensor Science and Technology
• /
• v.6 no.2
• /
• pp.163-171
• /
• 1997

CdS thin films for window material of solar cell were prepared by close spaced vapor transport deposition system and annealed at different temperatures. The structural, electrical, and optical properties of as-deposited and annealed CdS films were investigated as functions of substrate and annealing temperatures. The CdS thin films were grown perpendicularly to the substrate along the (002)plane with hexagonal structure regardless of the preparation conditions The resistivity of the CdS film deposited was increased gradually from $60{\Omega}cm$ for $25^{\circ}C$ to $2{\times}10^{4}{\Omega}cm$ for $300^{\circ}C$. The optical transmittance at the substrate temperature of $25^{\circ}C$ was about 80% in the the visible spectrum. The resistivity increased monotonically, and the optical transmittance was decreased substantially with annealing temperature due to the increased defect density in the CdS film.

• Korean Journal of Materials Research
• /
• v.8 no.6
• /
• pp.526-531
• /
• 1998

A hydride vapor phase epitaxy (HVPE) method was performed to grow the $10~240\mu{m}$ thick GaN films on (111) spinel $MgAl_2O_4$ substrate. The GaN films on $MgAl_2O_4$ substrate revealed a photoluminescence (PL) characteristics of the impurity doped GaN by the out-diffusion and auto-doping of Mg from $MgAl_2O_4$ substrate during GaN growth. The PL spectrum measured at 10K consists of free and bound excitons related recombination transitions and impurity-related donor-acceptor pair recombination and its phonon replicas. However, the deep-level related yellow band emission was not observed. The peak energy of neutral donor bound excitonic emission and the frequency of Raman $E_2$ mode were exponentially decreased with increasing the GaN thicknesses. and the frequency of E, Raman mode was shifted with the relation of $\Delta$$\omega$=3.93$\sigma$($cm^{-1}$/GPa), where l1 (GPa) is the residual strain in the GaN epilayers.

• Korean Journal of Materials Research
• /
• v.23 no.1
• /
• pp.47-52
• /
• 2013

Graphene has been synthesized on 100- and 300-nm-thick Ni/$SiO_2$/Si substrates with $CH_4$ gas (1 SCCM) diluted in mixed gases of 10% $H_2$ and 90% Ar (99 SCCM) at $900^{\circ}C$ by using inductively-coupled plasma chemical vapor deposition (ICP-CVD). The film morphology of 100-nm-thick Ni changed to islands on $SiO_2$/Si substrate after heat treatment at $900^{\circ}C$ for 2 min because of grain growth, whereas 300-nm-thick Ni still maintained a film morphology. Interestingly, suspended graphene was formed among Ni islands on 100-nm-thick Ni/$SiO_2$/Si substrate for the very short growth of 1 sec. In addition, the size of the graphene domains was much larger than that of Ni grains of 300-nm-thick Ni/$SiO_2$/Si substrate. These results suggest that graphene growth is strongly governed by the direct formation of graphene on the Ni surface due to reactive carbon radicals highly activated by ICP, rather than to well-known carbon precipitation from carbon-containing Ni. The D peak intensity of the Raman spectrum of graphene on 300-nm-thick Ni/$SiO_2$/Si was negligible, suggesting that high-quality graphene was formed. The 2D to G peak intensity ratio and the full-width at half maximum of the 2D peak were approximately 2.6 and $47cm^{-1}$, respectively. The several-layer graphene showed a low sheet resistance value of $718{\Omega}/sq$ and a high light transmittance of 87% at 550 nm.

• YAKHAK HOEJI
• /
• v.40 no.2
• /
• pp.193-201
• /
• 1996

In order to study the role of C-terminal aromatic region of T4 endonuclease V in the interaction with substrate DNA, NMR and Fluorescence spectrum were recorded. Analysis of flu orescence emission spectra showed that C-terminal region of T4 endonuclease V is in or very near the binding site. In the HSQC spectrum of $^{15}N$-Tyr-labeled T4 endonuclease V*DNA complex, the broadening of a peak was observed. It is presumed that this peak corresponds to one among three tyrosine residues which belong to the WYKYY segment of C-terminal region of T4 endonuclease V. Interactions of peptide fragments consisting of C-terminal residues of T4 endonuclease V with DNAs(TT-, T^T-DNA) were investigated by NMR and Fluorescence experiment. The results suggest that two peptide fragments themselves bind to DNAs and their binding pattern is not an intercalation mode.

• Proceedings of the Korea Contents Association Conference
• /
• 2004.11a
• /
• pp.554-557
• /
• 2004

Monolayers of lipids on a water surface have attracted much interest as models of thin films, also as precursors of multilayer systems promising many technical applications. Photoisomerization in monolayers of a novel azobenzene compound, azobenzene dendrimer, was investigated for the first time by means of the absorption spectrum and Maxwell displacement current (MDC) technique. Dendrimers are well-defined macromolecules exhibiting a tree-like structure, first derived by the cascade molecule approach. According to the absorption spectrum, trans-to-cis conversion ratio was estimated to azobenzene dendrimer deposited onto a glass substrate. As a result, It's photoisomerization progressed by dendrimer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.853-856
• /
• 2004

Monolayers of lipids on a water surface have attracted much interest as models of biological membranes but also as precursors of multilayer systems promising many technical applications. Until now, many methodologies have been developed in order to gain a better understand. Photoisomerization in monolayers of a novel azobenzene compound, azobenzene dendrimer, was investigated for the first time by means of the absorption spectrum and Maxwell displacement current (MDC) technique. Dendrimers are well-defined macromolecules exhibiting a tree-like structure, first derived by the cascade molecule approach. According to the absorption spectrum, trans-to-cis conversion ratio was estimated to the third generation of azobenzene dendrimer deposited onto a glass substrate. Temperature-dependent induced charge with trans-cis isomerization was also measured by means of MDC technique.

• Journal of the Korean institute of surface engineering
• /
• v.35 no.5
• /
• pp.305-311
• /
• 2002

Optical measurements have been used to study the biaxial tensile strain in heteroeptaxial ZnTe epilayers on the (100) GaAs substrate by hot wall epitaxy (HWE) with Zn reservoir. It is effect on the low-temperature photoluminescence spectrum of the material. Optimum growth condition has been determined by a four-crystal rocking curve (FCRC) and a low temperature photoluminescence measurement (PL). It was found that Zn partial pressure from Zn reservoir has a strong influence on the quality of grown films. Under the determined optimum growth condition, ZnTe epitaxial films with thickness of 0.72~24.8$\mu\textrm{m}$ were grown for studying the effect of the thickness on crystalline quality. The PL and FCRC results indicated that the quality of ZnTe films becomes higher rapidly with increase of thickness up to 6$\mu\textrm{m}$. The best value of the FWHM of the four crystal rocking curve, 66 arcsec, was obtained on the film with 12$\mu\textrm{m}$ in thickness. The PL spectrum shows the splitted strong free exciton emissions and very weak deep band emissions. These results show the high quality of films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11b
• /
• pp.23-26
• /
• 2004

Monolayers of lipids on a water surface have attracted much interest as models of biological membranes, but also as precursors of multilayer systems promising many technical applications. Until now, many methodologies have been developed in order to gain a better understand. Photoisomerization in monolayers of a novel azobenzene compound, azobenzene dendrimer, was investigated for the first time by means of the absorption spectrum and Maxwell displacement current(MDC) technique. Dendrimers are well-defined macromolecules exhibiting a tree-like structure, first derived by the cascade molecule approach According to the absorption spectrum, trans-to-cis conversion ratio was estimated to the third generation of azobenzene dendrimer deposited onto a glass substrate. Temperature-dependent induced charge with trans-cis isomerization was also measured by means of MDC technique.