• Korean Journal of Materials Research
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• v.4 no.4
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• pp.385-392
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• 1994

The morphology variat~on of diamond thin films, grown by microwave plasma chem~cal vapor deposition, was investigated. With increasing substrate temperature from $550^{\circ}C$ to $750^{\circ}C$, the film morphology was changed from {111} to {100}, and then to cauliflower. The nondiamond components in the film increased with increasing temperature. Micro Raman spectrum suggested that the nondiamond components might exist along the boundaries of d~amond particles. The texture of diamond films, analyzed by X-ray diffraction, was varied from random orientation to <100> , and finally to <110> with increasing substrate temperature.

• Journal of Power System Engineering
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• v.6 no.3
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• pp.24-30
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• 2002

The deformation and fracture behaviors of both Al2O3 and Ni 4.5wt.%Al plasma thermal spray coating were investigated by an acoustic emission method. Plasma thermal spray coating is formed by a process in which melted particles flying with high speed towards substrate, then crash and spread on the substrate surface cooled and solidified in a very short time, stacking of the particles makes coating. A tensile test is conducted on notch specimens in a stress range below the elastic limit of substrate. A bendind test is done on smooth specimens. The waveforms of AE generated from the both test coating specimens can be classified by FFT analysis into two types which low frequency(type I) and high frequency(type II). The type I waveform is considered to corresponds exfoliation of coating layers and type II waveform corresponds the plastic deformation of notch tip. The fracture of the coating layers can estimate by AE event and amplitude, because AE features increase when the deformation generates.

• Korean Journal of Materials Research
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• v.27 no.11
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• pp.609-616
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• 2017

We investigated a Leidenfrost effect in the growth of ZnO nanostructures on silicon substrates by ultrasonic-assisted spray pyrolysis deposition(SPD). Structural and optical properties of the ZnO nanostructures grown by varying the growth parameters, such as substrate temperature, source concentration, and suction rate of the mist in the chambers, were investigated using field-emission scanning electron microscopy, X-ray diffraction, and photoluminescence spectrum analysis. Structural investigations of the ZnO nanostructures showed abnormal evolution of the morphologies with variation of the substrate temperatures. The shape of the ZnO nanostructures transformed from nanoplate, nanorod, nanopencil, and nanoprism shapes with increasing of the substrate temperature from 250 to $450^{\circ}C$; these shapes were significantly different from those seen for the conventional growth mechanisms in SPD. The observed growth behavior showed that a Leidenfrost effect dominantly affected the growth mechanism of the ZnO nanostructures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.871-877
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• 1998

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays, where they are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/Eu(TTA)$_3$(phen)/Al, glass substrate/ITO/Eu(TTA)$_3$(phen)/Al and glass substrate/ITO/Eu(TTA)$_3$(phen)/AlQ$_3$/Al structures were fabricated by vacuum evaporation method, where aromatic diamine(TPD) was used as a hole transporting material, Eu(TTA)$_3$(phen) as an emitting material, and Tris(8-hydroxyquinoline) aluminu-m(AlQ$_3$) as an electron transporting layer. Electrolumescent(EL) and I-V characteristics of Eu(TTA)$_3$-(-phen) were investigated. These structures show the red EL spectra, which are almost the same at the PL spectrum of Eu(TTA)$_3$(phen). I-V characteristics of this structure show that turn-on voltage was 9V and current density was 0.01A/㎤ at a operation voltage of 9V. Electrical transporting phenomena of these structures were explained using the trapped-charge-limited current model with I-V characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.291-294
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• 2003

The circuit substrate was made from the Low Temperature Cofired Ceramics(LTCC) that a $\varepsilon_\gamma$ was 7.8. Accumulated Varactor and the low noise transistor which were a Surface Mount Device-type element on LTCC substrate. Let passive element composed R, L, C with strip-line of three dimension in the multilayer substrate circuit inside, and one structure accumulate band-pass filter, resonator, a bias line, a matching circuit, and made it. Used Screen-Print process, and made Strip-line resonator. A design produced and multilayer-type VCO(Voltage Controlled Oscillator), and recognized a characteristic with the Spectrum Analyzer which was measurement equipment. Measured multilayer structure VCO is oscillation frequency 1292[MHz], oscillation output -28.38[dBm], hamonics characteristic -45[dBc] in control voltage 1.5[V], A phase noise is -68.22[dBc/Hz] in 100 KHz offset frequency. The oscillation frequency variable characteristic showed 30[MHz/V] characteristic, and consumption electric current is approximately 10[mA].

• Journal of Advanced Marine Engineering and Technology
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• v.24 no.6
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• pp.61-69
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• 2000

Indium-Tin Oxide (ITO) films were prepared on the commercial glass substrate by the Magnetron Sputtering method. The target was a 90wt.% $In_2O_3$-10wt.% $SnO_2$with 99.99% purity. The ITO films deposited by changing the partial pressure of oxygen gas ($O_2$/(Ar+$O_2$)) of 2, 3 and 5% as well as by changing the substrate temperature of $300^{\circ}C$ or $500^{\circ}C$. The influence of substrate pre-annealing and pre-cleaning on the quality of ITO film were examined, in which the substrate temperature was $500^{\circ}C$ and oxygen partial pressure was 3%. The characteristics of films were examined by the 4-point probe, Hall effect measurement system, SEM, AFM, Spectrophotometer, and X-ray diffraction. The optimum ITO films have been obtained when the substrate temperature is $500^{\circ}C$ and oxygen partial pressure is 3%. At optimum condition, the film showed transmittance of 81%, sheet resistivity of $226\Omegatextrm{cm}^2$, resistivity($\rho$) of $5.4\times10^{-3}\Omega$cm, carrier concentration of $1.0\times10^{19}cm^{-3}$, and carrier mobility of $150textrm{cm}^2$Vsec. From XRD spectrum, c(222) plane was dominant in the case of substrate temperature at $300^{\circ}C$, without regarding to oxygen partial pressure. However, in the case of substrate temperature at $500^{\circ}C$, c(400) plane was grown together with c(222) plane, only for oxygen partial pressure of 2 and 3%. In both case of chemical and ultrasonic cleaning without pre-annealing the substrate, it showed much almost same sheet resistivity, resistivity($\rho$), transmittance, carrier concentration, and carrier mobility. In case of $500^{\circ}C$/60min pre-annealing before ITO film deposited, both transimittance and carrier mobility are better than no pre-annealing, because pre-annealing is supposed to remove alkari ions diffusion from substrate. ITO film deposited on the Corning 0080 sybstrate showed a little bit better sheet resistivity, resistivity($\rho$), transimittance, carrier concentration than the film deposited on commercial glass. But no differences between Corning substrate and pre-annealed commercial glass substrate are found.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.2
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• pp.162-165
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• 2011

In this paper, $CuInSe_2$ thin film was prepared by use of the co-evaporation method with the variation of the substrate temperature in the range of $100^{\circ}C$ to $400^{\circ}C$. The film was annealed at $300^{\circ}C$ for an hour in a vacuum chamber at $3{\times}10-4$ Pa. After annealing, the thin film prepared at the substrate temperatures of $100^{\circ}C$ and $200^{\circ}C$ was observed. The XRD (x-ray diffraction) pattern of sample prepared at $100^{\circ}C$ showed the single phase formation of $CuInSe_2$. However, at $200^{\circ}C$, there was no apparent difference in the XRD pattern except a variation in the intensity of the peak. As the annealing treatment of substrate improved the crystal structure of the film, it affected to the increase of an electron mobility, resulted in an increase in conductivity and a decrease in resistance. As a results, when the substrate temperature was at $200^{\circ}C$ and $300^{\circ}C$, the sheet resistance was 1.534 $\Omega/\Box$ and 1.554 $\Omega/\Box$, respectively, and the resistivity was $1.76{\times}10-6\;{\Omega}{\cdot}cm$ and $1.7210-6\;{\Omega}{\cdot}cm$, respectively. From the absorption spectrum measurements, there was no variation between the before and after annealing conductions. And it means that the annealing step does not affect the thickness of the thin film.

• Korean Journal of Materials Research
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• v.8 no.7
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• pp.591-595
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• 1998

In this work, the freestanding GaN single crystalline substrates without cracks were grown by hydride vapor phase epitaxy (HVPE) and its some properties were investigated. The GaN substrate, having a current maximum size of 350 $\mu\textrm{m}$-thickness and 100$\textrm{mm}^2$ area, were obtained by HVPE growth of thick film GaN on sapphire substrate and subsequent mechanical removal of the sapphire substrate. A lattice constant of $C_o$= 5.18486 $\AA$ and a FWHM of DCXRD was 650 arcsec for the single crystalline GaN substrate. The low temperature PL spectrum consist of three excitonic emission and a deep D- A pair recombination at 1.8eV. The Raman E, (high) mode frequency was 567$cm^{-1}$ which was the same as that of strain free bulk single crystals. The Hall mobility and carrier concentration was 283$cm^3$<\ulcornerTEX>/ V.sand 1.1$\times$$10^{18}cm^{-3}$, respectively.

• Journal of IKEEE
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• v.23 no.3
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• pp.1077-1081
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• 2019

Lights that enter the surface of a solar cell cannot be absorbed inside all of the solar cells, and some of it is reflected off the surface of the substrate, resulting in loss. Because of this, many studies are underway to reduce reflective losses on the surface of substrates or to steam the generated charge inside the solar cell. In this paper, surface treatment for forming a rough surface by wet etching the surface of a glass substrate is advanced, and structural characteristics of the rough surface are analyzed. Then, spectral characteristics by changing the angle of the glass substrate to which light enters the company are analyzed. When the light entering the company is investigated on a etched surface, it is confirmed that the probability of re-absorbing the light inside the glass substrate by multiple reflection is increased. When entering the light while changing the angle of the glass substrate, the transmission and reflection performance of the light are not changed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.1
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• pp.50-59
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• 1995

Abstract 6 H - SiC single crystal was grown by sublimation growth system which was self - designed and manufactured. In order that the SiC source might be decomposited and sublimed and deposited on the 6H - seed substrate grown by Acheson method, the temperature gradient, the growth parameters of growth temperature and pressure were operately adjusted. So we could get the optimum temperature gradient inside of the crucible. The graphite crucible with SiC powder and thermal shield componants were purified at the elevated temperature by means of Ar purging process and the source baking, then it distributed to reduce the amount of the impurities come from those parts. It was recognized that the optimum growth temperature of the crucible was$2300~2400^{\circ}C$ at the Ar atmospheric pressure of 200~400 torr, and at that moment the growth rate was 500~1000 $\mu\textrm{m}$. And then, the as- grown crystal was cut with the wafer form, the evaluation about the crystal was carried out by XRD, the optical microscopic observation and FT IR spectrum measurement.