• 해양환경안전학회지
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• 제27권4호
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• pp.521-528
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• 2021

본 연구는 손상된 선박용 절탄기 핀튜브에 대하여 보수를 목적으로 Inconel 625 아크 열용사 코팅기술 적용 후 실링처리를 실시하였다. 모재(Substrate), 열용사 코팅(Thermal Srpay Coating; TSC) 그리고 열용사 코팅+실링처리(TSC+Sealing) 시편에 대하여 내구성을 평가하기 위해 ASTM G76-05에 의거하여 고상입자 침식(Solid Particle Erosion; SPE) 실험을 실시하였다. 표면 손상 형상은 주사전자현미경과 3D 레이져 현미경을 통해 관찰했으며, 무게 감소량과 표면 거칠기 분석을 실시하여 내구성을 평가하였다. 그 결과 내구성은 TSC와 TSC+Sealing에 비해 Substrate가 우수하게 나타났으며, 이는 TSC 층 내에 존재하는 다수의 기공 결함에 기인한 것으로 판단된다. 또한 고상입자 침식 손상 메카니즘은 Substrate의 경우 연성 재질 특성인 소성변형과 피로에 의한 균열 생성이 동반되었으며, TSC와 TSC+Sealing의 경우 취성파괴 경향이 확인되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.146-147
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• 2009

$CuGaSe_2$ (CGS) layers were grown by the hot wall epitaxy method. The optimum temperatures of the substrate and source for growth turned out to be 450 and $610^{\circ}C$, respectively. Based on the absorption measurement, the band-gap variation of CGS was well interpreted by the Varshni's equation. By analyzing these emissions, a band diagram of the observed optical transitions was obtained. From the solar cell measurement, an 11.17 % efficiency on the n-CdS/p-CGS junction was achieved.

• Journal of Welding and Joining
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• 제22권5호
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• pp.46-52
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• 2004

AlSi-Al$_2$O$_3$ composite layer was prepared by plasma spray on steel substrate. The composite powder for plasma spray was prepared by simple mechanical blending. The wear resistance of the composite layers and matrix aluminum alloy were performed in terms of size distribution of ceramic particles. Friction coefficients of AlSi were decreased with incorporation of $Al_2$O$_3$. The tribological properties of coated layers were affected by the size of incorporated $Al_2$O$_3$ particle. The reinforcement of $Al_2$O$_3$ particle into aluminum alloy matrix decreased the friction coefficient as well as wear loss.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.224-227
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• 2001

ZnO buffer layers were used to grow ZnO films on c-plane sapphire substrates. The role of ZnO buffer layers in the growth of ZnO thin films on sapphire substrates was investigated by scanning electron microscopy, X-ray diffraction, and Photolumminescence(PL) measurements. At the optimized ZnO buffer layer thickness of 100 $\AA$, FWHM of $\theta$ -rocking curve of ZnO thin films was minimized to 0.73 degrees and room temperature PL spectra showed that deep level emission was not hardly seen. The optimization of the ZnO buffer layer thickness resulted in improvements of the surface morphology and crystalline quality of ZnO thin films.

• 한국전기전자재료학회논문지
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• 제21권1호
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• pp.63-67
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• 2008

The charged particle type display is a kind of electronic paper showing information images using positive and negative charged particles ($<10{\mu}m$). In this work we used yellow(-) and black(+) particles which are respectively addressed to the cells of a upper and a rear substrate by using electric field. Our independent addressing method has strong points compared to the mixed particle putting method. The packaging with two orthogonal substrates and the aging process is followed by addressing process. The panel is sequentially driven by matrix method for each 4-unit cells. Layers of particles are controlled by barrier ribs and must be addressed to minimum 2 layers.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2006년도 추계학술대회 발표 논문집
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• pp.51-55
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• 2006

ITO/Ag/AZO and AZ0/Ag/ITO multi-layer films deposited on glass substrate by RF magnetron sputtering have a much better electrical properties than ITO and AZO single-layer films. The multi-layer structure was consisted of three layers of ITO, Ag and AZO. The optimum working pressure of AZO layers deposition was determined to be $1.0{\times}10^{-2}$ torr for high optical transmittance and good electrical conductivity. The electrical and optical properties of sub/IT0/Ag/AZO were higher than those of sub/AZ0/Ag/ITO multi-layer films.

• 한국세라믹학회지
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• 제29권1호
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• pp.48-52
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• 1992

Indium tin oxide (ITO) layers are of considerable interest on account of the combination of properties they provide high electrical conductivity, high infrared reflection with high solar energy transmission, high transmission in the visible range. We are concerned about the variation of the spectral transmittances and sheet resistances as the thickness of SiO2-ZrO2 barrier layer and ITO layers and heat treating conditions are changed. Transmittances and reflectivities were studied by measuring UV-VIS-NIR-, FT-IR spectroscopy. ITO films are crack free, homogeneous and of polycrystalline cubic structure. The microstructure of good ITO films shows a narrow grain size distribution and mean value of 100 nm. The selectivity of absorbing properties is improved by increasing the thickness of ITO films. The increase of sheet resistance of ITO films are due to the increase in the reaction between films and glass substrate.

• Transactions on Electrical and Electronic Materials
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• 제11권5호
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• pp.212-215
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• 2010

$BiFeO_3/Pb(Zr_{0.95}Ti_{0.05})O_3$ (BFO/PZT) heterolayered thin films were fabricated by the spin coating method on a Pt/Ti/$SiO_2$/Si substrate using metal alkoxide solutions. The coating and heating procedure was repeated 6 times to form the heterolayered films. The thickness of the BFO/PZT films after one cycle of drying/sintering is about 30-40 nm. All BFO/PZT films show a void free uniform grain structure without the presence of rosette structures. It can be assumed that the crystal growth of the upper BFO layers can be influenced by the lower PZT layers. As the number of coatings increased, the dielectric constant increased, so that the value for the 6-layer film was 1360 at 1 KHz.

• 한국전기전자재료학회논문지
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• 제16권10호
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• pp.865-870
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• 2003

The MFIS (Metal-Ferroelectric-Insulator-Semiconductor) capacitors were fabricated using a metalorganic decomposition method. Thin layers of CeO$_2$ were deposited as a buffer layer on Si substrate and BLT thin films were used as a ferroelectric layer. The electrical and structural properties of the MFIS structure were investigated. X -ray diffraction was used to determine the phase of the BLT thin films and the quality of the CeO$_2$ layer. The morphology of films and the interface structures of the BLT and the CeO$_2$ layers were investigated by scanning electron microscopy. The width of the memory window in the C-V curves for the MFIS structure is 2.82 V. The experimental results show that the BLT-based MFIS structure is suitable for non-volatile memory FETs with large memory window.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 추계학술대회 논문집 학회본부
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• pp.688-691
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• 1997

Good quality superconducting $YBa_2Cu_30_{7-{\delta}}$(YBCO) thin films were grown on Hastelloy (Ni-Cr-Mo alloys) with yttria-stabilized zirconia(YSZ) buffer layers by in situ pulsed laser deposition in a multi-target processing chamber. Generally, Hastelloy exhibits excellent resistance to corrosion, fatigue, thermal shock, impact, and erosion. However, it is difficult to make films on flexible metallic substrates due to interdiffusion problems between metallic substrates and superconducting overlayers. To overcome this difficulty, it is necessary to use YSZ buffer layer since it will not only limit the interdiffusion process but also minimize the surface microcrack formation due to smaller mismatch between the film and the substrate. In order to enhance the crystallinity of YBCO films on metallic substrates, YSZ buffer layers were grown at various temperatures different from the deposition temperature of YBCO films. On YSZ buffer layer grown at higher temperature than that for depositing YBCO film, the YBCO thin film was found to be textured with c-axis orientation by x-ray diffraction and had a zero-resistance critical temperature of about 85K.