• 한국세라믹학회지
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• 제33권3호
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• pp.313-320
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• 1996

We have fabricated an in-plane aligned a-axis oriented YBa2Cu3O7-x (a-YBCO) thin film on a LaSrGaO4(100) substrate with a PrBa2Cu3O7-x(PBCO) template layer by two step plused laser deposition using 308 nm XeCl excimer laser. A YBCO layer and PBCO layer grown at low temperatures were used as template layers. We have investigated the effect of the deposition temperature of template layers on the superconducting and struc-tural properties of in-plane aligned a-YBCO thin films. An optimal deposition temperature of the PBCO template layers was 630. In-plane aligned a-YBCO thin films showed an anisotropy ratio in resistivity of 11.5 and a zero resistance temperature of 88 K.

• 한국초전도ㆍ저온공학회논문지
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• 제18권1호
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• pp.33-36
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• 2016

Suppression of the superconducting transition temperature ($T_c$) of NbN thin films in superconductor/ferromagnet multilayers has been investigated. Both superconducting NbN and ferromagnetic FeN layers were deposited on thermally oxidized Si substrate at room temperature by using reactive magnetron sputtering in an $Ar-N_2$ gas mixture. The thickness of FeN films was fixed at 20 nm, while the thickness of NbN films was varied from 3 nm to 90 nm. $T_c$ suppression was clearly observed in NbN layers up to 70 nm thickness when NbN layer was in proximity with FeN layer. For a given thickness of NbN layer, the magnitude of $T_c$ suppression was increased in the order of Si/FeN/NbN, Si/NbN/FeN, and Si/FeN/NbN/FeN structure. This result can be used to design a spin switch whose operation is based on the proximity effect between superconducting and ferromagnetic layers.

• Current Photovoltaic Research
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• 제2권2호
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• pp.73-77
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• 2014

To investigate the effect of metal back-reflective layers (MBLs) on the performance of GaAs solar cells, we fabricated GaAs solar cells on Al and Ag metal layers using the transfer printing technique. We also investigated the effect of MBL texturing on the performance of transfer printed GaAs solar cells. Transfer printed solar cells with MBLs exhibited improved photovoltaic performance compared to solar cells without MBLs due to light trapping. We demonstrated GaAs solar cells with MBLs on a flexible substrate and performed systematic bending tests. All the measured characteristics of solar cells showed little change in performance.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 1988년도 제8회 학술강연회초록집
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• pp.35-48
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• 1988

상대 접촉하고 있는 물체에 미끄럼 운동이 가해질 경우 마찰에 의해 발생되는 거의 모든 에너지는 열로써 나타나게 된다. 이러한 마찰열은 주로 adhered junctions의 파괴 및 표면돌기(surface asperities)들의 소성 변형에 의한 열역할적 비가역 반응의 결과로 발생된다. 접촉부위의 발생열은 양 접촉제의 접촉면에 전달되어 접촉표면 온도의 급격한 증가를 초래하며 그 결과로 여러가지 surface phenomena, 즉 마찰, 마모, 산화(oxidation), 부식 및 구조적 열화(structural degradation) 금속학적 상변화등에 큰 영향을 미치게 된다. 딸서 볼 및 로울링 엘레먼트 베어링, 기어, 캠과 태핏, 브레이크 등 기계요소의 설계를 위한 주인자로서 근래에 들어 접촉표면의 온도가 주목받고 있다. 표면에 존재하는 layer로서는 금속표면에 응착시킨 coating layers, contaminant films, physisorbed 또는 chemisorbed films, oxide layers 또는 마찰열에 의해 형성되는 경도가 아주 높은 내마모층(hard wear-resistant layers) 등이 고려될수 있다. 낮은 열전도성을 가진 oxide film이 접촉 표면이 온도를 증가시킨다는 것이 Jaeger에 의해 지적되었으며 Ling과 Lai는 moving heat sjource가 가해지는 layered surface의 표면온도분포를 구하면서 substrate와 thermal property가 다른 layer가 존재하게 되면 그 두께가 아주 얇더라도 (1 마이크론 정도) 표면온도는 크게 변화됨을 보였다.

• 한국레이저가공학회지
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• 제2권2호
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• pp.27-33
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• 1999

Electron beam was applied on the low carbon steel in order to fabricate Metal/Metal GBM(Graded Boundary Material). Ni sheet was placed on the steel substrate. The electron beam was irradiated on the surface and produced a homogeous alloyed layer. Sequential repetition of electron beam treatments for 4 times resulted in 8mm thick graded layer. To determine each layers property, optical microscopy, XRD, microhardness tester and EDS were used. The residual stress was measured by the low angle x-ray diffraction method. The graded boundary layer was stepwise profile, but Ni content incresed up to 80 wt% and Fe content decreased 20 wt% near surface. Each layers microstructure and hardness varied by different Fe/Ni composition. The compressive residual stress was induced by martensite transformation in the 1st and End layers and the shrinkage cracks were formed in graded layer by rapid cooling.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.127-127
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• 2012

We carried out the high-resolution dielectric mapping of graphenes on $SiO_2$/Si substrate, using the scattering Apertureless Near-Field Scanning Optical Microscopy (s-ANSOM) in both visible (633 nm) and infrared (3.6 um) wavelengths. In the visible wavelength, the dielectric contrasts are almost proportional to the number of the graphene layers, which indicates that the near-field interaction between the tip and individual graphene layers leads to an image charge oscillation in two-dimension. In the infrared region, on the other hand, we observe unique layer-specific contrasts that do not linearly increase with number of layers. It is attributed to the layer-dependent band- structure of graphenes.

• 한국자동차공학회논문집
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• 제16권5호
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• pp.113-118
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• 2008

We have developed an integrated giant magneto resistance using not only circuit but also integrating technique with semiconductor for automobile application. It has four elements used for giant magneto resistance sensor. Ni-Fe/Cu multi layers were prepared on a glass substrate by magnetron sputtering. The dependence of magneto resistance on the thickness of the Ni-Fe and Cu layers was investigated. The MR ratio showed a saturated a peak at Cu layer $10{\AA}$, Ni-Fe layer $50{\AA}$, where the MR ratio is about 8.7% at room temperature. By means of Ni-Fe multi film and specific integrating technique, these new giant magneto resistance sensor showed excellent resistance characteristics.

• 반도체디스플레이기술학회지
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• 제10권4호
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• pp.107-112
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• 2011

This paper is for improving the RF frequency performance of a fabricated 100nm ${\Gamma}$-gate MHEMT, scaling down vertically for the epitaxy-structure layers of the device. Hydrodynamic simulation parameters are calibrated for the fabricated MHEMT with the modulation-doped $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}$As heterostructure grown on the GaAs substrate. With these calibrated parameters, simulations for the vertically-scaled epitaxial layers of the device are performed and analyzed for DC/RF characteristics, including the quantization effect due to the thickness reduction of InGaAs channel layer. A newly designed epitaxy-structure device shows higher extrinsic transconductance, $g_m$ of 1.556 S/mm, and higher frequency performance, $f_T$ of 222.5 GHz and $f_{max}$ of 849.6 GHz.

• 한국광학회지
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• 제26권5호
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• pp.275-282
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• 2015

단축이방성 박막들과 등방성 박막들이 코팅되어 있는 시료에 비스듬히 입사한 빛의 유효반사계수 표현들을 유도하였다. 단축 이방성 박막 내에서의 다중반사 효과를 반영하여 여러 층의 등방성 박막들과 이방성 박막들이 섞여 있는 시료의 유효반사계수 표현들과 타원상수 표현들을 제시함으로써 시료면에 수직한 방향으로 균일하지 않은 단축이방성 분포를 가진 시료의 광학이방성을 여러 개의 단축이방성 박막으로 나누어 분석할 수 있도록 하였다.

• 한국진공학회지
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• 제4권4호
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• pp.394-401
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• 1995