• Korean Journal of Materials Research
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• v.12 no.4
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• pp.254-258
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• 2002

To realize channel cross-connecting in optical communications systems, a high speed optical matrix switch was fabricated using z-cut $LiNbO_3$. For switch fabrication was design bending structure and coupling length and four $2{\times}2$ directional couplers were integrated on one substrate far construction of a $4{\times}4$ switch. Single-mode optical waveguides were formed by Ti-diffusion at a wet $O_2$ atmosphere. Ti-diffusion profile, refractive index variation and waveguide morphology were analyzed by Prism coupler and optical microscopy, respectively.

• Journal of Advanced Marine Engineering and Technology
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• v.38 no.1
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• pp.70-77
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• 2014

In this work, we studied basic characteristics of transmission lines employing various PSS (periodic strip structure) on silicon substrate for application to a miniaturization of RF components. According to the results, the transmission lines employing various PSS showed wavelength shorter than conventional coplanar waveguide due to their strong wave characteristics. Especially, with-contact structure was most effective for a miniaturization of RF component. Concretely, the size of the transmission line employing with-contact was only 4.39 % of the conventional coplanar waveguide, According to the bandwidth extraction result, the bandwidth of the transmission lines employing various PSS structures were wider than 384 GHz. Above results indicate that the transmission lines employing various PSS can be effectively used for application to a broadband and miniature RF component, and especially, with-contact is most effective for a miniaturization of RF components.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.583-586
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• 2005

In this paper, millimeter-wave monolithic integrated circuit (MIMIC) low noise amplifier (LNA) for V-band, which is applicable to 58 GHz, we designed and fabricated. We fabricated the module using the fabricated LNA chips. The V-band MIMIC LNA was fabricated using the high performance $0.1\;{\mu}\;m$ ${\Gamma}-gate$ pseudomorphic high electron mobility transistor (PHEMT). The MIMIC LNA was designed using active and passive device library, which is composed $0.1\;{\mu}\;m$ ${\Gamma}-gate$ PHEMT and coplanar waveguide (CPW) technology. The designed V-band MIMIC LNA was fabricated using integrated unit processes of active and passive device. Also we fabricated CPW-to-waveguide fin-line transition of WR-15 type for module. The Transmission Line was fabricated using RT Duroid 5880 substrate. The measured results of V-band MIMIC LNA and Module are shown $S_{21}$ gain of 13.1 dB and 8.3 dB at 58 GHz, respectively. The fabricated LNA chip and Module in this work show a good noise figure of 3.6 dB and 5.6 dB at 58 GHz, respectively.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.135-135
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• 2003

The fast evolution in the fold of optical communication systems demands powerful optical information treatment. These functions can be performed by integrated optical systems. A key component of such systems is erbium doped waveguide amplifier(EDWA). The intra 4f radiative transition of Er at 1.5 $\mu\textrm{m}$ is particularly interesting because this wavelength is standard in optical telecommunications. The fabrication of waveguide amplifier for integrated optics using sol-gel process has received an increasing attention. Potential advantage of lower cost by less capital equipment and easy processing makes this process an attractive alternatives to conventional technologies like flame hydrolysis deposition, ion exchange and chemical vapor deposition, etc. In addition, sol-gel process has been found to be extremely suitable for the control of composition and refractive index related directly with optical properties. The main drawback of such an amplifier with respect to the EDWA is the need for a much higher Er3+ concentration to compensate for the smaller interaction length. However, the high doping of Er might be resulted in the non-radiative relaxation by clustering of Er ions End co-operative upconversion. In order to solve this problem, we investigate the possibility of avoiding short Er-Er distances by encapsulation of Er3+ ions in hosts such as organic-inorganic hybrid materials. For inorganic-organic hybrid sols, methacryloxypropyltrimethoxysilane (MPTS), zirconyl chloride octahydrate and erbium(III) chloride hexahydrate were used as starting materials, followed by conventional sol-gel process. It was observed by TEM that nano sols having core/shell toplology were formed, depending on the mole ratio of Zr/Er. The surface roughness for the coatings on Si substrate was investigated by AFM as a function of Zr/Er ratio. The local environment and vibrational Properties of Er3+ ions were studied using Near-IR, FT-IR, and UV/Vis spectroscopy. Nano hybrid coatings derived from polymer and Er doped encapsulation Eave the good luminescence at 1.55$\mu\textrm{m}$.

• Journal of electromagnetic engineering and science
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• v.10 no.3
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• pp.171-174
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• 2010

In the paper, a printed dual-dipole array antenna is presented. A 4-way planar SIW power divider is adopted for feeding the array antenna. The dual-dipole is adopted as radiation elements which greatly improves the impedance band. The measured bandwidth larger than 31 % for VSWR$\leq$1.5 operating near 14 GHz is achieved and in agreement with the simulated results. The radiation E-plane and H-plane radiation pattern is presented in the paper. The radiation gain is also presented in the paper.

• Journal of electromagnetic engineering and science
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• v.10 no.3
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• pp.175-178
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• 2010

In this paper, a millimeter-wave multi-beam antenna is studied by rotating the antipodal linear tapered slot antenna(ALTSA) with respect to a center is successfully designed. In order to lowering the SLL and enhancing the isolation between the ALTSA elements, a row of metallic via is inserted between the ALTSAs. A 9 beams antenna is designed and experimented at Ka band. The measured and simulated results agree well with each other. The antenna can provide horizontal wide angle coverage up to ${\pm}62^{\circ}$. The gain of each beam can achieve about 12.5 dB. The mutual coupling between ports is all below 20 dB.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.6
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• pp.412-419
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• 2001

In accordance with the PON(passive optical network) could be setup, effective connections with light sources, optical detectors, and optical fibers are the best sensitive points to represent the efficiency of network. Therefore, in this paper we designed and fabricated optical transceiver connection chip that was consisted of channel waveguide, Y-branch, and CWDM on the 2" BK7 glass substrate. This chip can be used for 1.31/1.55${\mu}{\textrm}{m}$ CWDM network and 1.55${\mu}{\textrm}{m}$ region dense WDM network.work.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.5
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• pp.515-525
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• 2014

In this paper, we present a design and implementation of a Voltage-tuned Planar Composite Resonator Oscillator(Vt-PCRO) with a low phase noise. The designed Vt-PCRO is composed of a resonator, two phase shifters, and an amplifier. The resonator is designed using a dual mode SIW(Substrate Integrated Waveguide) resonator and has a group delay of about 40 nsec. Of the two phase shifters (PS1 and PS2), PS1 with a phase shift of $360^{\circ}$ is used for the open loop gain to satisfy oscillation condition without regard to the electrical lengths of the employed microstrip lines in the loop. PS2 with a phase shift of about $70^{\circ}$ is used to tune oscillation frequency. The amplifier is constructed using two stages to compensate for the loss of the open loop. Through the measurement of the open loop gain, the tune voltage of the PS1 can be set to satisfy the oscillation condition and the loop is then closed to form the oscillator. The oscillator with a oscillation frequency of 5.345 GHz shows a phase noise of -130.5 dBc/Hz at 100 kHz frequency offset. The oscillation power and the electrical frequency tuning range is about 3.5 dBm and about 4.2 MHz for a tuning voltage of 0~10 V, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.12
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• pp.2199-2205
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• 2016

In this paper, a design method for a coplanar waveguide (CPW)-fed 2-element quasi-Yagi antenna (QYA) is studied. A balun between CPW and coplanar strip (CPS) which feeds a planar dipole is implemented by connecting the one end of ground strips in a CPW to a signal strip. The antenna size is reduced by bent strip dipole and reflector, and an integrated balun. The proposed antenna was designed for the operation in a UHF radio frequency identification (RFID) band of 902-928 MHz, and the effects of various parameters such as dipole length, reflector length, distance between dipole and reflector, feed position were examined. The antenna with a size of $90mm{\times}80mm$ was fabricated on an FR4 substrate, and the experiment results reveal a frequency band of 885-942 MHz for a voltage standing wave ratio < 2, a gain > 4.3 dBi, and a front-to-back ratio > 7 dB over the frequency band for the UHF RFID.

• Korean Journal of Optics and Photonics
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• v.5 no.4
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• pp.499-504
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• 1994

Ti-doped BSG (borosilicate glass) soot films on the silicone substrate have been deposited in the mixture of $SiCl_{4}$, TMB, $TiCL_{4}$ by flame hydrolysis deposition technique. The soot films are melted to form integrated fine glass films. We can fabricate thick films of serveral $10{\mu}m$ with deposition rate,more than $0.5{\mu}m$/min. Refractive index difference of BSG films are increased to more than 0.3% as function of the amount of Ti dopant. As a result of the process an optical waveguide which is simmilar with dimmension and refractive difference of optical fiber is produced. $BCl_{3}$ is widely used for B dopant, but we abtained the good results by the use of TMB in place of $BCl_{3}$. The melting point of silica soot glass is reduced to $1200^{\circ}C$ increasing B dopant. From FTIR analysis $B_2O_3$ content up to about lOmol% in BSG films. films.