• Korean Journal of Materials Research
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• v.20 no.4
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• pp.187-193
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• 2010

Chromium nitride (CrN) samples with two different layer structures (multilayer and single layer) were coated on bipolar plates of polymer electrolyte membrane fuel cells (PEMFC) using the reactive sputtering method. The effects with respect to layer structure on corrosion resistance and overall cell performance were investigated. A continuous and thin chromium nitride layer ($Cr_{0.48}\;N_{0.52}$) was formed on the surface of the SUS 316L when the nitrogen flow rate was 10 sccm. The electrochemical stability of the coated layers was examined using the potentiodynamic and potentiostatic methods in the simulated corrosive circumstances of the PEMFC under $80^{\circ}C$. Interfacial contact resistance (ICR) between the CrN coated sample and the gas diffusion layer was measured by using Wang's method. A single cell performance test was also conducted. The test results showed that CrN coated SUS316L with multilayer structure had excellent corrosion resistance compared to single layer structures and single cell performance results with $25\;cm^2$ in effective area also showed the same tendency. The difference of the electrochemical properties between the single and multilayer samples was attributed to the Cr interlayer layer, which improved the corrosion resistance. Because the coating layer was damaged by pinholes, the Cr layer prevented the penetration of corrosive media into the substrate. Therefore, the CrN with a multilayer structure is an effective coating method to increase the corrosion resistance and to decrease the ICR for metallic bipolar plates in PEMFC.

• Korean Journal of Materials Research
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• v.24 no.6
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• pp.305-309
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• 2014

When sunlight irradiates a boron-doped p-type solar cell, the formation of BsO2i decreases the power-conversion efficiency in a phenomenon named light-induced degradation (LID). In this study, we used boron-doped p-type Cz-Si solar cells to monitor this degradation process in relation to irradiation wavelength, intensity and duration of the light source, and investigated the reliability of the LID effects, as well. When halogen light irradiated a substrate, the LID rate increased more rapidly than for irradiation with xenon light. For different intensities of halogen light (e.g., 1 SUN and 0.1 SUN), a lower-limit value of LID showed a similar trend in each case; however, the rate reached at the intensity of 0.1 SUN was three times slower than that at 1 SUN. Open-circuit voltage increased with increasing duration of irradiation because the defect-formation rate of LID was slow. Therefore, we suppose that sufficient time is needed to increase LID defects. After a recovery process to restore the initial value, the lower-limit open-circuit voltage exhibited during the re-degradation process showed a trend similar to that in the first degradation process. We suggest that the proportion of the LID in boron-doped p-type Cz-Si solar cells has high correlation with the normalized defect concentrations (NDC) of BsO2i. This can be calculated using the extracted minority-carrier diffusion-length with internal quantum efficiency (IQE) analysis.

• Polymer(Korea)
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• v.29 no.3
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• pp.308-313
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• 2005

The effects of molecular environments on photoisomerization of an azobenzene group were investigated using In-situ UV/Vis spectroscopy and optical anisotropy measurement technique. The reversible and repeatable photoisomeritation reactions of azobenzene were observed by irradiating the film containing 4-hydroxyazobenzene and by measuring absorption intensities of the characteristic bands of trans and cis isomers simultaneously. When the self-assembled monolayer with azobenzene groups was used as an alignment layer for a liquid crystal cell, the homeotropic alignment was induced due to their compact packing structures of azobenfene groups along the vertical direction of the substrate. By irradiating UV light on this cell, the trans-azobenzene groups change to cis-isomers through the photoisonlerieation and then resulting in the planar alignment of liquid crystal molecules.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.6
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• pp.638-647
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• 2003

Triangular patches have been studied, both theoretically and experimentally. We feund that provided radiation characteristics similar to those of rectangular patches, but with smaller size. In this paper, we designed an equilateral triangular microstrip patch antenna using cavity model analysis. Then, in order to improve narrow bandwidth, we add capacitive gap and air gap. Capacitive gap is located with square shape beside feeding point on the patch, and air gap is inserted between substrate dielectric and ground plane to adjust probe inductance. The analysis of characteristics and effects of each component was performed by commercial simulation tool, Ensemble 5.0. Throughout the simulation and experiment, we found the possibility of bandwidth enhancement in triangular microstrip antenna.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.3
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• pp.203-212
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• 2010

In this paper, we present an analytical model for the first eigen energy level ($E_0$) of the carriers in the inversion layer in present generation MOSFETs, having ultrathin gate oxides and high substrate doping concentrations. Commonly used approaches to evaluate $E_0$ make either or both of the following two assumptions: one is that the barrier height at the oxide-semiconductor interface is infinite (with the consequence that the wave function at this interface is forced to zero), while the other is the triangular potential well approximation within the semiconductor (resulting in a constant electric field throughout the semiconductor, equal to the surface electric field). Obviously, both these assumptions are wrong, however, in order to correctly account for these two effects, one needs to solve Schrodinger and Poisson equations simultaneously, with the approach turning numerical and computationally intensive. In this work, we have derived a closed-form analytical expression for $E_0$, with due considerations for both the assumptions mentioned above. In order to account for the finite barrier height at the oxide-semiconductor interface, we have used the asymptotic approximations of the Airy function integrals to find the wave functions at the oxide and the semiconductor. Then, by applying the boundary condition at the oxide-semiconductor interface, we developed the model for $E_0$. With regard to the second assumption, we proposed the inclusion of a fitting parameter in the wellknown effective electric field model. The results matched very well with those obtained from Li's model. Another unique contribution of this work is to explicitly account for the finite oxide-semiconductor barrier height, which none of the reported works considered.

• BMB Reports
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• v.33 no.2
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• pp.112-119
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• 2000

Three kinds of serine protease inhibitors, members of the Bowman-Birk trypsin inhibitor, were purified from Dolichos lablab seeds and named Dolichos protease inhibitor 1, 2 and 3 (DI-1, DI-2 and DI-3), respectively. Each inhibitor showed a single band with gel mobility at around 15.9, 12.1 and 14.6 kDa on 20% SDS-PAGE under reducing conditions. To characterize inhibitory specificity, the inhibition constant (Ki) for these inhibitors was measured against several known serine proteases. All three Dolichos protease inhibitors (DI-1, DI-2 and DI-3) inhibited the activity of trypsin and plasmin, but had no effect on thrombin and kallikrein (either for human plasma kallikrein or for porcine pancreas kallikrein). DI-1 inhibited chymotrypsin most effectively (Ki = $3.6{\times}10^{-9}\;M$), while DI-2 displayed inhibitory activity for porcine pancreatic elastase (Ki = $6.2{\times}10^{-8}\;M$). Pre-treatment of the 33 mg/kg of DI-mixture (active fractions from $C_{18}$ open column chromatography that included DI-1, DI-2 and DI-3) inhibited the induction of pseudomonal elastase-induced septic hypotension and prevented an increase in bradykinin generation in pseudomonal elastase-treated guinea pig plasma. Also, the increase of kallikrein activity, by injection of pseudomonal elastase, was inhibited by the pretreatment of the DI-mixture in a guinea pig. Since the DI-mixture had no inhibitory effect on kallikrein activity when Z-Phe-Arg-MCA was used as a substrate in vitro, its inhibitory activity in the pseudomonal elastase-induced septic hypotension model might not be due to a direct inhibition of plasma kallikrein in the activation cascade of the Hageman factor and prekallikrein system. These results suggest that the Dolichos DI-mixture might be used as an inhibitor in pathogenic bacterial protease-induced septic shock.

• Progress in Superconductivity and Cryogenics
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• v.13 no.1
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• pp.6-11
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• 2011

The $BaHfO_3$ (BHO) buffer layer on the IBAD MgO template was turned to be effective for a successful fabrication of $GdBa_2Cu_3O_{7-{\delta}}$ (GdBCO) films with high critical current density ($J_c$). Both the BHO buffer layers and GdBCO films were prepared by pulsed laser deposition (PLD). The effects of the PLD conditions, including substrate temperature ($T_s$), oxygen partial pressure ($PO_2$), and deposition time on the in-plane texture, surface roughness, and microstructures of the BHO buffer layers on the IBAD MgO template were systematically studied for processing optimization. The c-axis oriented growth of BHO layers was insensitive to the deposition temperature and the film thickness, while the in-plane texture and surface roughness of those were improved with increasing $T_s$ from 700 to $800^{\circ}C$. On the optimally processed BHO buffer layer, the highest $J_c$ value (77 K, self-field) of 3.68 $MA/cm^2$ could be obtained from GdBCO film deposited at $780^{\circ}C$, representing that BHO is a strong candidate for the buffer layer on the IBAD MgO template.

• Microbiology and Biotechnology Letters
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• v.9 no.1
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• pp.7-19
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• 1981

The production of gluconic acid from glucose by the resting cell system of Aspergillus niger was studied. It was found that the conversion products from glucose by the resting cell system were markedly influenced by the pH, temperature, substrate concentration, aeration, metal ions, cultivation time and storage conditions of the resting cells. Conversion products were identified as gluconic acid by the thin layer chromatography and infrared spectrophotometry. These conversions were greatly stimulated by addition of $Mg^{++}$, and S $n^{++}$, but showed inhibitory effects by C $u^{++}$, H $g^{++}$, C $d^{++}$, A $g^{+}$ and cyanide. For the optimum cell storage, it was effective to be kept at -$25^{\circ}C$ in 0.05M phosphate buffer solution of pH 7.0. The gluconic acid production by the resting cell system was more effective than those of the fermentation with respect to cultivation time, yield, recovery and re-use of the cell.l.l.l.l.l.l.

• The Journal of Korean Academy of Prosthodontics
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• v.35 no.1
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• pp.103-117
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• 1997

The purpose of this experiment was to determind whether the gold electrodeposit on Pd-Ag and Ni-Cr alloys influences on the shear bond strength between veneering resin and silicoated metal surface. All the metal specimens were sandblasted with $250{\mu}m$ aluminum oxide and followed by silicoating and resin veneering. According to the metal surfaces to be veneered, experimental groups were divided into five. Group Prec : Gold alloy without gold coating Group Semi : Pd-Ag alloy without gold coating Group Base : Ni-Cr alloy without gold coating Group Semi-G : Pd-Ag alloy with gold coating Group Base-G : Ni-Cr alloy with gold coating All specimens were thermocycled 1,000 times at temperature of $5^{\circ}C$ to $55^{\circ}C$. The effects of gold electrodeposit on the shear bond strength between resin and metal interface were measured and fractured surface of the resin veneered metal was examined under the scaning electron microscope. The following results were obtained 1. The shear bond strength between resin and metal was $64.51{\pm}11.11Kg/cm^2$ in Prec group, $62.77{\pm}11.23Kg/cm^2$ in Base group and $58.97{\pm}9.20Kg/cm^2$ in Semi Group. There was no significant difference among the groups. 2. The bond strength in groups Semi-G and Base-G decreased about 17%, compared to the nongold-electrodeposit groups(Semi, Base). 3. In groups of non electrodeposit(Prec, Semi, Base), fracture occurred at the interface between alloy and resin, while fracture interface was observed between gold coating and resin in group Semi-G, and between metal substrate and gold coating in group Base-G respectively.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.131-131
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• 2003

The advent of photonic technologies in the field of communications and data transmission has been heavily increasing the demand in integrated optical (IO) circuits capable of accomplishing not only simple tasks like signal, but also more sophisticated functions like all-optical signal routing or active multiplexing/demultiplexing. In the last decade, sol-gel technology has been widely used to prepare optical materials. Sol-gel processes show many promises for the development of low-loss, high-performance glass integrated optical circuits. However, crack formation is likely to occur during heat treatment in thick gel films. In order to overcome the critical thickness limitation, the organic-modified silicate has been widely used. In this case coating matrices have been prepared from the organo-silanes of T structures, acidic catalyst and the as-prepared gel films have been heat-treated below 200$^{\circ}C$ to avoid the crack formation and the degradation of organic components. However, the films prepared in the acidic condition and the low heat temperature make the films contain high OH groups which is the major optical loss function. In this work, C$\sub$6/H$\sub$5/SiO$\sub$1.5/ films were prepared on silicon substrate by sol-gel method using base catalyst in a PTMS/NH$_4$OH/H$_2$O/C$_2$H$\sub$5/OH system. The sol showed spinable viscosity at 50 wt% of solid content, and neglectable viscosity change with time. The films were crack-free and transparent after curing at 450 $^{\circ}C$, and highly condensed to minimize OH content in C$\sub$6/H$\sub$5/SiO$\sub$1.5/ networks. The effects of heat treatment of the films are characterized on the critical thickness, the chemical composition and the refractive indices by means of SEM, FT-IR, TGA, prism coupler, respectively.