• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.96.2-96.2
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• 2010

The surface morphology and structural properties of polycrystalline silicon (poly-Si) films made in-situ aluminum induced crystallization at various substrate temperature (300~600) was investigated. Silicon films were deposited by hot-wire chemical vapor deposition (HWCVD), as the catalytic or pyrolytic decomposition of precursor gases SiH4 occurs only on the surface of the heated wire. Aluminum films were deposited by DC magnetron sputtering at room temperature. continuous poly-Si films were achieved at low temperature. from cross-section TEM analyses, It was confirmed that poly-Si above $450^{\circ}C$ was successfully grown on and poly-Si films had (111) preferred orientation. As substrate temperature increases, Si(111)/Si(220) ratio was decreased. The electrical properties of poly-Si film were investigated by Hall effect measurement. Poly-Si film was p-type by Al and resistivity and hall effect mobility was affected by substrate temperature.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.40-44
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• 2008

The interfacial adhesion energy between resist and a substrate is very important due to resist pull-off problems during separation of mold from a substrate in nanoimprint process. And effect of substrate surface roughness on interfacial adhesion energy is very important. In this paper, we have treated glass wafer surface using $CF_4$ gas for increase surface roughness and it has tested interfacial adhesion properties of UV resin/glass substrate interfaces by 4 point bending test. The interfacial adhesion energies by bare, 30, 60 and 90 sec surface treatments are 0.62, 1.4, 1.36 and 2 $J/m^2$, respectively. The test results showed quantitative comparisons of interfacial fracture energy (G) effect of glass wafer surface roughness.

• Transactions on Electrical and Electronic Materials
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• v.8 no.4
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• pp.170-173
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• 2007

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated the organic field-effect transistor based a copper phthalocyanine (CuPc) as an active layer on the silicon substrate. The CuPc FET device was made a topcontact type and the substrate temperature was room temperature and $150^{\circ}C$. The CuPc thickness was 40 nm, and the channel length was $50{\mu}m$, channel width was 3 mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in CuPc FET and we calculated the effective mobility with each device. Also, we observed the AFM images with different substrate temperature.

• Transactions on Electrical and Electronic Materials
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• v.12 no.1
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• pp.40-42
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• 2011

An organic field-effect transistor (OFET) was fabricated using a copper phthalocyanine (CuPc) as the active layer on the silicon substrate. The CuPc FET device was configured as a top-contact type. The substrate temperature was room temperature. The CuPc thickness was 40 nm, and the channel length and channel width were 100 ${\mu}m$ 3 mm, respectively. Typical current-voltage (I-V) characteristics of the CuPc FET were observed and subsequently compared to the UV/ozone treatment on substrate surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.164-168
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• 2005

We report high performance poly (3-hexylthiophene) organic field-effect transistors fabricated on a plastic substrate. The polymer active channel layer was directly printed by the rubber stamp printing method with a pre-patterned elastomer stamp. As a result. organic transistors having average field-effect mobility of 0.079 $cm^2/Vs$ and on/off ratio of $10^4{\sim}10^5$ were realized on a plastic substrate. Also, through the investigation of the molecular ordering of rubber-stamp-printed poly (3-hexylthiophene) films using synchrotron grazing-incidence X-ray diffraction measurements, the films were found to have edge-on structure which is favorable in realizing high performance organic transistors.

• Mycobiology
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• v.33 no.1
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• pp.19-22
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• 2005

We investigated the effect of nitrogen fixing Azotobacter bioinoculant on the mycelial growth and the rate of substrate utilization by Pleurotus eous. The synergistic or antagonistic role of the microorganism during dual culturing with the mushroom or the competitor molds Trichoderma viride, and Trichoderma reesi was studied. Azotobacter was inhibitory to the molds, which are competitive to the mushroom in the seed spawn substrate, but was synergistic towards the mushroom. The growth, substrate utilization potential as total nitrogen content and cellulase enzyme activities of the mushroom in the seed spawn substrate were also enhanced in the presence of the bioinoculant at lower inoculum concentrations, upto 5 ml broth culture per spawn bottle.

• Solar Energy
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• v.19 no.1
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• pp.77-86
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• 1999

The optimal thermal design of a single heat source on one wall of a vertical open top cavity was studied experimentally. The temperature and flow fields in the cavity were visualized. The objectives of this study is to obtain the best location of the single heat source and to examine the effects of heat source protrusion, substrate thermal conductivity and cavity aspect ratio on the natural convection cooling due to a single heat source. As the results, the cooling effect for the copper substrate is superior to that of the epoxy-resin substrate and is improved with increasing cavity width. For the epoxy-resin substrate of lower conductivity, the protrusion of the heaters plays a role in decreasing the cooling effect. The best location was the mid-height of the substrate.

• Microbiology and Biotechnology Letters
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• v.21 no.2
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• pp.163-170
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• 1993

The effect of substrate micellization on the hydrolysis rate in the production of lysopho-sphatidylcholine (LPC) from phosphatidylcholine (PC) using hog pancreas phospholipase A2(PLA2) was studied. The optimal temperature and pH for the reactions in aqueous phase was found 42C and 7.2, respectively. For a given PC concentration, initial reaction rate was progressively increased with the addition of sodium deoxycholate (DOC), which could transform the bilayer of phospholipids into micellar structure.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.59-59
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• 2010

Graphene is a 2-D sheet of $sp^2$-bonded carbon arranged in a honeycomb lattice. This material has attracted major interest, and there are many ongoing efforts in developing graphene devices because of its high charge mobility and crystal quality. Therefore clear understanding of the substrate effect and mechanism of synthesis of graphene is important for potential applications and device fabrication of graphene. In a published paper in J. Phys. Chem. C (2008), the effect of substrate on the atomic/electronic structures of graphene is negligible for graphene made by mechanical cleavage. However, nobody shows the interaction between Ni substrate and graphene. Therefore, we have studied this interaction. In order to studying these effect between graphene and Ni substrate, We have observed graphene synthesized on Ni substrate and graphene transferred on $SiO_2$/Si substrate through Raman spectroscopy. Because Raman spectroscopy has historically been used to probe structural and electronic characteristics of graphite materials, providing useful information on the defects (D-band), in-plane vibration of sp2 carbon atoms (G-band), as well as the stacking orders (2D-band), we selected this as analysis tool. In our study, we could not observe the doping effect between graphene and Ni substrate or between graphene and $SiO_2$/Si substrate because the shift of G band in Raman spectrum was not occurred by charge transfer. We could noticed that the bonding force between graphene and Ni substrate is more strong than Van de Waals force which is the interaction between graphene and $SiO_2$/Si. Furthermore, the synthesized graphene on Ni substrate was in compressive strain. This phenomenon was observed by 2D band blue-shift in Raman spectrum. And, we consider that the graphene is incommensurate growth with Ni polycrystalline substrate.

• Journal of the Korean Ceramic Society
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• v.53 no.1
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• pp.81-86
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• 2016

The effect of substrate rotation speed on the phase forming behavior and microstructural variation of 8 wt% yttria ($Y_2O_3$) stabilized $ZrO_2$ (8YSZ) coatings as a thermal barrier coating has been investigated. 8YSZ coatings with $100{\sim}200{\mu}m$ thickness were deposited by electron beam-physical vapor deposition onto a super alloy (Ni-Cr-Co-Al) substrate with a bond coating (NiCo-CrAlY). The width of the columnar grains of the 8YSZ coatings increased with increasing substrate rotation speed from 1 to 30 rpm at a substrate temperature range of $900{\sim}950^{\circ}C$. In spite of the different growth behaviors of coatings with different substrate rotation speeds, the phases of each coating were not changed remarkably. Even after post heat treatments with various conditions of the coated specimens fabricated at 20 rpm, only a change of color was noticeable, without any remarkable change in the phase or microstructure.