• Title/Summary/Keyword: structure of crystal grains

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Synthesis of YSZ Thin Films by PECVD (PECVD에 의한 YSZ(Yttria Stabilized Zirconia)박막 제조)

  • Kim, Gi-Dong;Sin, Dong-Geun;Jo, Yeong-A;Jeon, Jin-Seok;Choe, Dong-Su;Park, Jong-Jin
    • Korean Journal of Materials Research
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    • v.9 no.3
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    • pp.234-239
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    • 1999
  • A Abstract Yttria-stabilized zirconia(YSZ) thin films were synthesized by plasma enhanced chemical vapor deposition process. $Zr[TMHD]_4$ $Y[TMHD]_3$ precursors and oxygen were used with the deposition temperature of $425^{\circ}C$ and rf power ranging 0-100 watt. Effects of the deposition parameters were studied by X-ray diffraction and thickness anal­ysis. YSZ thin films have cubic crystal structure with (200) orientation. From the results of EDX analysis, the converte ed content of TEX>$Y_2O_3$ was determined to be 0-36%, and the film thickness was increased with bubbling temperature which is considered to be due to increasing TEX>$Y_2O_3$ flux. The depth profiles of Zr, Y and 0 appeared relatively $\infty$nstant through film thickness. Columnar grains of $1000~2000\AA$ grew vertical to the substrate surface for the case of Ar carri­er gas. In case of He carrier gas, the grain size was observed to be about $1000~2000\AA$. X-ray diffraction data showed the increase of lattice constant with TEX>$Y_2O_3$ content. It was that the presence of the cracks formed during film deposition, partially released the stress generated by the increase of lattice constant.

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Manufacturing technique and provenance Analysis of Bronze Artefacts excavated from Pungnap earthen fortress (풍납토성 출토 청동유물의 제작기술 및 납 원료의 산지추정)

  • Han, Woo Rim;Kim, So Jin;Han, Min-su;Hwang, Jin-ju;Lee, Eun-woo
    • Korean Journal of Heritage: History & Science
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    • v.48 no.2
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    • pp.110-119
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    • 2015
  • Bronzes, Earthenwares and various artifacts were excavated from Pungnap earthen fortress in the early Baekje age in Korea. This study was performed in order to identify the manufacture technology of bronze artefacts and provenance of lead in bronzes. Microstructure and chemical composition results show that 3 of them are Cu-Sn-Pb alloys in which an intentional lead addition was carried out and one is tin bronze showing straight twin structure within crystal grains. Also $CuFeS_2$ or $Cu_5FeS_4$ was used as raw materials through the detection of S and Fe as trace elements. The lead isotope results could be matched with one of the zones of southern Korea and China on the East Asian map. This results shows that data were plotted either in zone 2 or zone 3 of the South Korean galena map. However, one of bronze artifacts was matched with the zone of Northern China.

Metalorganic Chemical Vapor Deposition of Copper Films on TiN Substrates Using Direct Liquid Injection of (hfac)Cu(vtmos) Precursor ((hfac)Cu(vtmos)의 액체분사법에 의한 TiN 기판상 구리박막의 유기금속 화학증착 특성)

  • Jun, Chi-Hoon;Kim, Youn-Tae;Kim, Dai-Ryong
    • Korean Journal of Materials Research
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    • v.9 no.12
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    • pp.1196-1204
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    • 1999
  • We have carried out copper MOCVD(metalorganic chemical vapor deposition) onto the reactive sputtered PVD-TiN and rapid thermal converted RTP-TiN substrates using direct liquid injection for effective delivery of the (hfac)Cu(vtmos) [$C_{10}H_{13}O_{5}CuF_{6}$Si: 1,1,1,5,5,5-hexafluoro-2,4- pentadionato (vinyltrimethoxysilane) copper (I)] precursor. Especially, the influences of deposition conditions and the substrate type on growth rate, crystal structure, microstructure, and electrical resistivity of copper deposits have been discussed. It is found that the film growth with 0.2ccm precursor flow rate become mass-transfer controlled up to Ar flow rate of 200sccm and pick-up rate controlled at a vaporizer above 1.0Torr reactor pressure. The surface-reaction controlled region from 155 to 225$^{\circ}C$ at 0.6Torr reactor pressure results in the apparent activation energies of 12.7~14.1kcal/mol, and above 224$^{\circ}C$ the growth rate with $H_2$ addition could be improved compared to the pure Ar carrier. The Cu/RTP-TiN structures which have high copper nucleation density in initial stage of growth show more pronounced (111) preferred orientations and lower electrical resistivities than those on PVD-TiN. The variation of electrical resistivity with substrate temperature reflects the three types of film microstructure changes, showing the lowest value for the deposit at 165$^{\circ}C$ with small grains of good contacts.

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Authigenic Phillipsite in Deep-sea Manganese Nodules from the Clarion-Clipperton Fracture Zones, NE Equatorial Pacific (적도 북동 태평양, 클라리온-클리퍼톤 균열대에서 산출되는 망간단괴내의 자생 필립사이트)

  • Lee, Chan Hee;Lee, Sung-Rock
    • Economic and Environmental Geology
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    • v.29 no.4
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    • pp.421-428
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    • 1996
  • The occurrence, optical property, chemical composition, crystal structure and formation environments of the phillipsite within deep-sea manganese nodules were systematically investigated in this study. Phillipsite in manganese nodules occurs in nucleus of nodules along with consolidated bottom sediments, weathered volcanic debris, and interstitial grains in the each layer of manganese encrusts. Phillipsite is predominantly pseudomorphs of volcanic shards, and occurs as white to pale yellow in color lath-shaped and equant crystals. These show aggregations of prismatic, blocky, and bladed of 2 to $20{\mu}m$ long, and 2 to $5{\mu}m$ thick. The simplified average chemical formula of phillipsite is $({Ca_{0.1}Mg_{0.3}Na_{1.1}K_{1.5}})_3{(Fe_{0.3}Al_{4.2}Si_{11.8})O_{32}{\cdot}10H_2O}$ with a very siliceous and alkalic. The $Si/(Al+Fe^{+3})$ ratio is 2.37 to 2.78 and alkalis greatly exceed the divalent exchangeable cations, and Na/K ratio is 0.59 to 0.81. The phillipsite is monoclinic ($P2_l/m$) with the unit-cell parameters, $a=10.005{\AA}$, $b=14.129{\AA}$, $c=8.686{\AA}$, ${\beta}=124.35^{\circ}$, and $V=1013.6{\AA}^3$. Phillipsites in manganese nodules formed apparently authigenically at a temperature less than $10^{\circ}C$, and they crystallized at a pressure of less than 0.7 kb, and pH of about 8 in deep-sea environments.

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