• 제목/요약/키워드: strong thin layer

검색결과 162건 처리시간 0.031초

얇은 면재를 갖는 샌드위치 평판의 진동해석 (Vibration Analysis of the Sandwich Plates with very thin faces)

  • 박인규;김익태;손충열
    • 대한조선학회논문집
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    • 제30권1호
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    • pp.134-144
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    • 1993
  • 샌드위치 구조는 두층의 얇고 밀도가 크며 높은 강도와 강성을 갖고 있는 면재와 이에 비해 상대적으로 두껍고 밀도, 강도, 강성이 낮은 심재로 구성되어 서로의 단점을 보완하는 경량의 특수한 형태이다. 본 연구에서는 등방성의 심재에 2장의 면재가 대칭으로 적층된 샌드위치 평판 모델에 대해 Rayleigh-Ritz 방법으로 해석한 후, 고유진동수를 구하였다. 면재는 G.R.P.의 일종인 E-glass Woven Roving 외에 2종류를 사용하였고 심재는 foam core로서 P.V.C. 외에 3종류를 사용하여 면재와 심재의 종류, 두께, 지지조건 등의 변화에 따른 각 모우드의 고유진동수와 모우드 형상들을 구하고 각 조건들이 고유진동수에 미치는 영향을 비교 분석하였다. 본 연구의 해석결과를 유한요소 program인 ADINA의 결과와 비교하였다.

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Shape anisotropy and magnetic properties of Co/Ni anti-dot arrays

  • Deshpande, N.G.;Seo, M.S.;Kim, J.M.;Lee, S.J.;Lee, Y.P.;Rhee, J.Y.;Kim, K.W.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.444-444
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    • 2011
  • Recently, patterned magnetic films and elements attract a wide interest due to their technological potentials in ultrahigh-density magnetic recording and spintronic devices. Among those patterned magnetic structures, magnetic anti-dot patterning induces a strong shape anisotropy in the film, which can control the magnetic properties such as coercivity, permeability, magnetization reversal process, and magneto-resistance. While majority of the previous works have been concentrated on anti-dot arrays with a single magnetic layer, there has been little work on multilayered anti-dot arrays. In this work, we report on study of the magnetic properties of bilayered anti-dot system consisting of upper perforated Co layer of 40 nm and lower continuous Ni layer of 5 nm thick, fabricated by photolithography and wet-etching processes. The magnetic hysteresis (M-H) loops were measured with a superconducting-quantum-interference-device (SQUID) magnetometer (Quantum Design: MPMS). For comparison, investigations on continuous Co thin film and single-layer Co anti-dot arrays were also performed. The magnetic-domain configuration has been measured by using a magnetic force microscope (PSIA: XE-100) equipped with magnetic tips (Nanosensors). An external electromagnet was employed while obtaining the MFM images. The MFM images revealed well-defined periodic domain networks which arise owing to the anisotropies such as magnetic uniaxial anisotropy, configurational anisotropy, etc. The inclusion of holes in a uniform magnetic film and the insertion of a uniform thin Ni layer, drastically affected the coercivity as compared with single Co anti-dot array, without severely affecting the saturation magnetization ($M_s$). The observed changes in the magnetic properties are closely related to the patterning that hinders the domain-wall motion as well as to the magneto-anisotropic bilayer structure.

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Al 박막이 증착 된 Si(111) 기판 위에 HVPE 방법으로 성장한 GaN의 특성 (The Properties of GaN Grown by BVPE Method on the Si(111) Substrate with Pre-deposited Al Layer)

  • 신대현;백신영;이창민;이삼녕;강남룡;박승환
    • 한국진공학회지
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    • 제14권4호
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    • pp.201-206
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    • 2005
  • 본 연구에서는 HVPE (Hydride Vapor Phase Epitaxy) 방법으로 Si 위에 GaN/AIN/Al/Si 구조를 제작하고, AlN 버퍼층의 두께에 따른 광학적 특성을 조사함으로써 효과적인 eaN 성장을 위한HVPE에서의 공정 방법을 개선하고자 하였다. 이를 위해 Al을 증착한 Si 기판과 그렇지 않은 경우를 PL측정을 통해 그 효과를 관찰하였고, $5{\AA}$ 두께의 Al 대해 AlN 버퍼층의 두께를 변화시켜가면서 GaN를 성장시켜 그 특성을 조사하였다. Al을 증착한 경우가 증착하지 않은 경우에 비해 광학적 특성이 우수한 것으로 나타났으며, AlN의 두께 변화에 대해서는 양질의 GaN를 얻기 위한 최적의 두께는 약 $260{\AA}$ 인 것으로 나타났다. 이 경우 SEM을 이용한 표면사진에서 GaN의 초기성장이 hexagonal형태로 성장되고 있음을 관찰할 수 있었다. 또한 XRD의 회절 패턴은 GaN가 {0001} 방향으로 우선 배향성을 가지고 성장되고 있음을 보여주고 있었다.

Characteristics of MOCVD Cobalt on ALD Tantalum Nitride Layer Using $H_2/NH_3$ Gas as a Reactant

  • 박재형;한동석;문대용;윤돈규;박종완
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.377-377
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    • 2012
  • Microprocessor technology now relies on copper for most of its electrical interconnections. Because of the high diffusivity of copper, Atomic layer deposition (ALD) $TaN_x$ is used as a diffusion barrier to prevent copper diffusion into the Si or $SiO_2$. Another problem with copper is that it has weak adhesion to most materials. Strong adhesion to copper is an essential characteristic for the new barrier layer because copper films prepared by electroplating peel off easily in the damascene process. Thus adhesion-enhancing layer of cobalt is placed between the $TaN_x$ and the copper. Because, cobalt has strong adhesion to the copper layer and possible seedless electro-plating of copper. Until now, metal film has generally been deposited by physical vapor deposition. However, one draw-back of this method is poor step coverage in applications of ultralarge-scale integration metallization technology. Metal organic chemical vapor deposition (MOCVD) is a good approach to address this problem. In addition, the MOCVD method has several advantages, such as conformal coverage, uniform deposition over large substrate areas and less substrate damage. For this reasons, cobalt films have been studied using MOCVD and various metal-organic precursors. In this study, we used $C_{12}H_{10}O_6(Co)_2$ (dicobalt hexacarbonyl tert-butylacetylene, CCTBA) as a cobalt precursor because of its high vapor pressure and volatility, a liquid state and its excellent thermal stability under normal conditions. Furthermore, the cobalt film was also deposited at various $H_2/NH_3$ gas ratio(1, 1:1,2,6,8) producing pure cobalt thin films with excellent conformality. Compared to MOCVD cobalt using $H_2$ gas as a reactant, the cobalt thin film deposited by MOCVD using $H_2$ with $NH_3$ showed a low roughness, a low resistivity, and a low carbon impurity. It was found that Co/$TaN_x$ film can achieve a low resistivity of $90{\mu}{\Omega}-cm$, a low root-mean-square roughness of 0.97 nm at a growth temperature of $150^{\circ}C$ and a low carbon impurity of 4~6% carbon concentration.

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Mo:Na 두께에 따른 Cu(In,Ga)Se2 박막의 물성과 효율변화 (The Physical Properties and Efficiencies of Cu(In,Ga)Se2 Thin Films Depending on the Mo:Na Thickness)

  • 신윤학;김명한
    • 한국재료학회지
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    • 제24권3호
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    • pp.123-128
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    • 2014
  • To realize high-performance thin film solar cells, we prepared CIGS by the co-evaporation technique on both sodalime and Corning glass substrates. The structural and efficient properties were investigated by varying the thickness of the Mo:Na layer, where the total thickness of the back contact was fixed at 1${\mu}m$. As a result, when the Mo:Na thickness was 300 nm on soda-lime glass, the measured Na content was 0.28 %, the surface morphology was a plate-like compact structure, and the crystallinity by XRD showed a strong peak of (112) preferential orientation together with relatively intense (220) and (204) peaks as the secondary phases influenced crystal formation. In addition, the substrates on soda-lime glass effected the lowest surface roughness of 2.76 nm and the highest carrier density and short circuit current. Through the optimization of the Mo:Na layer, a solar conversion efficiency of 11.34% was achieved. When using the Corning glass, a rather low conversion efficiency of 9.59% was obtained. To determine the effects of the concentration of sodium and in order to develop a highefficiency solar cells, a very small amount of sodium was added to the soda lime glass substrate.

THIN FILM ADHESION IN Cu/Cr/POLYIMIDE AND Cu/Cu-Cr/POLYIMIDE SYSTEMS

  • Joh, Cheol-Ho;Kim, Young-Ho;Oh, Tae-Sung;Park, Ik-Sung;Yu, Jin
    • 한국표면공학회지
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    • 제29권5호
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    • pp.379-385
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    • 1996
  • Adhesion of Cu/Cr and Cu/$Cu_xCr_{1-x}$ thin films onto polyimide substrates has been studied. For an adhesion layer, Cr or Cu-Cr alloy films were deposited onto polyimide using DC magnetron sputtering machine. Then Cu was sputter-deposited and finally, Cu was electroplated. Adhesion was evaluated using $90^{\circ}C$ peel test or T-peel test. Plastic deformation of the peeled metal layer was qualitatively measured using XRD technique. It is confirmed that high interfacial fracture energy and large plastic deformation are important to enhance the peel adhesion strength. High peel strength is obtained when the interface is strongly bonded. More ductile film has higher peel strength. In Cu-Cr alloy films, opposite effects of the Cr addition in the alloy film on the peel strength are operative: a beneficial effect of strong interfacial bonding and a negative effect of smaller plastic deformation.

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Wind loading of a finite prism: aspect ratio, incidence and boundary layer thickness effects

  • Heng, Herman;Sumner, David
    • Wind and Structures
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    • 제31권3호
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    • pp.255-267
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    • 2020
  • A systematic set of low-speed wind tunnel experiments was performed at Re = 6.5×104 and 1.1×105 to study the mean wind loading experienced by surface-mounted finite-height square prisms for different aspect ratios, incidence angles, and boundary layer thicknesses. The aspect ratio of the prism was varied from AR = 1 to 11 in small increments and the incidence angle was changed from α = 0° to 45° in increments of 1°. Two different boundary layer thicknesses were used: a thin boundary layer with δ/D = 0.8 and a thick boundary layer with δ/D = 2.0-2.2. The mean drag and lift coefficients were strong functions of AR, α, and δ/D, while the Strouhal number was mostly influenced by α. The critical incidence angle, at which the prism experiences minimum drag, maximum lift, and highest vortex shedding frequency, increased with AR, converged to a value of αc = 18° ± 2° once AR was sufficiently high, and was relatively insensitive to changes in δ/D. A local maximum value of mean drag coefficient was identified for higher-AR prisms at low α. The overall behaviour of the force coefficients and Strouhal number with AR suggests the possibility of three flow regimes.

극저온에서 증착된 비정질실리콘 산화막 기반의 고성능 박막태양전지 (High Performance Amorphous Silicon Oxide Thin Film Solar Cells Fabricated at Very Low Temperature)

  • 강동원
    • 전기학회논문지
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    • 제65권10호
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    • pp.1694-1696
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    • 2016
  • Present thin film solar cells with hydrogenated amorphous silicon oxide (a-SiO:H) as an absorber suffer from low fill factor(FF) of 61~64 [%] in spite of its benefits related to high open circuit voltage ($V_{oc}$). Since degraded quality of a-SiO:H absorber by alloying with oxygen can affect the FF, we aimed to achieve high photosensitivity by minimizing $CO_2$ gas addition. Improving optical gap($E_{opt}$) has been attained by strong hydrogen dilution combined with lowering substrate temperature down to 100 [$^{\circ}C$]. Small amount of the $CO_2$ was added in order to disturb microcrystalline formation by high hydrogen dilution. The developed a-SiO:H has high photosensitivity (${\sim}2{\times}10^5$) and high $E_{opt}$ of 1.85 [eV], which contributed to attain remarkable FF of 74 [%] and high $V_{oc}$ (>1 [V]). As a result, high power conversion efficiency of 7.18 [%] was demonstrated by using very thin absorber layer of only 100 [nm], even though we processed all experiment at extremely low temperature of 100 [$^{\circ}C$].

유연성 기판위에 스퍼터링 방법으로 증착한 CdS 박막의 전기적 특성 및 신뢰성 평가 (Electrical Properties and Reliability of CdS Thin Film Deposited by R.F. Sputtering)

  • 허성기;황미나;안준구;윤순길
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.26-26
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    • 2010
  • Cadmium sulfide (CdS) thin film for flexible optical device applications were prepared at $H_2(Ar+H_2)$ flow ratios on polyethersulfon(PES) flexible polymer substrates at room temperature by radio frequency magnetron sputtering technique. The CdS thin films deposited at room temperature showed a (002) preferred orientation and the smooth surface morphologies. Films deposited at a hydrogen flow ratio of 25% exhibited a photo- and dark-sheet resistance of about 50 and $2.7{\times}10^5{\Omega}$/square, respectively. From the result of the bending test, CdS films exhibit a strong adhesion with the PES polymer substrates and the $Al_2O_3$ passivation layer deposited on the CdS films only shows an increase of the resistance of 8.4% after exposure for 120 h in air atmosphere.

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NiFe/Cu 계면에 삽입된 Co 층이 NiFe/Cu/Co 스핀밸브 박막의 거대자기저항 특성과 자기이방성에 미치는 영향 (Effects of Ultrathin Co Insertion Layer on Magnetic Anisotropy and GMR Properties of NiFe/Cu/Co Spin Valve Thin Films)

  • 김형준;조권구;주승기
    • 한국자기학회지
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    • 제9권5호
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    • pp.251-255
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    • 1999
  • 4$^{\circ}$기울어진 Si(111) 웨이퍼를 기판으로 사용하여 Cu(50$\AA$) 바닥층 위에 외부 자장의 인가없이 iFe(60$\AA$)/Co(0$\AA$$\leq$x$\AA$$\leq$15$\AA$)/Cu(60$\AA$)/Co(30$\AA$) 스핀밸브 박막을 형성하여, NiFe/Cu 계면에 삽입된 Co 층에 따른 스핀밸브 박막의 거대자기저항 특성의 변화와 NiFe 층의 자기이방성의 변화를 관찰하였다. NiFe/Cu 계면에 극히 얇은 Co층이 삽입됨에 따라, 스핀밸브 박막의 자기저항비는 약 1.5%에서 3.5%로 약 2배이상 증가하였고, NiFe층의 자화용이축이 90$^{\circ}$전이하여 Co(30$\AA$)층의 자화용이축과 같은 방향으로 정렬됨이 관찰되었다. 따라서, 극히 얇은 Co 층이 NiFe/Cu 계면에 삽입된 스핀밸브 박막에서 향상된 각형성(squareness)을 나타내는 자기저항곡선을 관찰할 수 있었으며, 이는 MRAM을 비롯한 디지털 자기저항소자 응용에 적합한 것으로 판단되었다. 또한, NiFe 박막을 동일한 기판과 바닥층에 형성하여, NiFe 박막과 Cu 바닥층이 이루는 계면에 Co 층의 삽입 유무에 따른 XRD 측정을 한 결과, NiFe/Cu 계면에 존재하는 Co층에 상관없이 NiFe 박막은(220) 배향을 타나냈었으며, 이로부터 극히 얇은 Co층의 삽입에 따른 NiFe층의 자기이방성의 변화는 NiFe/Cu 계면에서 NiFe/Co 계면으로 바뀜에 따른 계면 효과에 의한 것으로 사료되었다.

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