• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.5
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• pp.1000-1006
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• 2007

This paper presents a power detector circuit which monitors the transmitting power for the application in CDMA cell phones. The proposed power detector are composed of coupler for coupling output power and detector fur monitoring output power. The designed coupler has low loss characteristic because it adopts the stripline structure which consists of two ground planes at both sides of signal plane. The design frequency is 824-849MHz which is the Tx band fur CDMA mobile terminal, and the coupling factor of the stripline coupler is -20dB. A schottky barrier diode is adopted for detector design because of its high speed operation with minimized loss. The required impedance matching is performed to improve the linearity and sensitivity of output voltage at relatively low detector input level where the nonlinear characteristic of diode exists. The package parasitics as well as intrinsic diode model are considered for simulation of the detector. The predicted performances agree well with the measured results.

• Journal of the Korean Institute of Telematics and Electronics
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• v.14 no.5
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• pp.7-14
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• 1977

Conventionally, a TIVT has been used for high power amplification in the microwave frequency range. However, an ultra-high-power amplifier in the 2GHz range has successfully been designed and fabricated employing high power transistors developed recently and available commercially. In the design of the amplifier, a balanced-pair configuration is adopted in order to obtain very high microwave power, and a good impedance matching is achieved by making use of microstripline techniques. For the RF power divider as well as combiner, an approach of stripline directional coupler isadopted because of its easiness in fabrication. The coupler so designed and fabricated indicates a satisfactory performance as a quadrature hybrie coupler. Measurements on the amplifier developed for an immediate commercial application also exhibit excellent overall performance characteristics RF power output, 14 watts, gain 14dB, frequency bandwidth, 160MHz, effciency 40%.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.3
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• pp.621-627
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• 2008

This paper presents a compact and miniaturized power detector utilizing low temperature co-fired ceramics(LTCC) technology for the application in wireless handset system to monitor the transmitting power at the frequency of 824-849MHz. The proposed power detector is composed of detector diode, lumped components for matching network, and LTCC stripline coupler based on LTCC substrate technology. A 20dB LTCC stripline direction coupler is designed and implemented with many bending section in order to reduce the practically occupied area for miniaturization. A zero bias schottky diode is adopted for detector design because of its high speed operation with minimized loss. The measured performances of fabricated detector agree well with the predicted results with a good linearity within the effective input RF power range.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.12
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• pp.1139-1147
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• 2011

In this paper, a design and fabrication of GaN power amplifier for the S-band frequency (400 MHz bandwidth) are presented. A combining path using ${\lambda}$/4 transmission line is implemented for GaN pallet amp. Both the combiner with suspended-type transmission structure for low-loss and the suspended stripline coupler with aperture coupling for auto gain control are realized for achieving high-power high-efficiency amplifier. Proposed power amplifier demonstrated a 5 kW peak output power, 27.8 % efficiency, 67 dB gain without ALC and a 4 kW peak output power, 25.5 % efficiency, 0.1 dB droop at 200 usec pulse width and 10 % duty with ALC.