• 한국정밀공학회지
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• 제9권3호
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• pp.140-148
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• 1992

The effect of mechanical, properties in the plastic zone near the crack-tip was investigated, under various controlled loading conditions, i.e., ${\Delta}K$ increasing, ${\Delta}K$ decreasing, and single overload test. For both ${\Delta}K$ decreasing test and ${\Delta}K$ increasing test with constant stress ratio, it is found that the ratio of material constant m'( ${\Delta}K$ decreasing test) to material constant m( ${\Delta}K$ increasing test) is larger than 1 for n<0.1, and it is equal to 1 for 0.10.2. A modified crack growth rate equation based on Forman's equation which applied stable region of fatigue crack propagation in ${\Delta}K$ decreasing test is proposed. Within the limit of this single overload test, an empirical relation between among the retardation ratio (Nd/ $N^{*}$), the strain hardening exponent (n) and the percent peak load (%PL) has been established.established.

• 대한기계학회논문집
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• 제13권1호
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• pp.87-95
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• 1989

본 연구에서는 국내산 비규칙성 짧은 섬유로 강회된 SMC 복합재료의 피로파괴 특성에 대한 기초자료로서 피로균열의 진전특성을 나타내는데 기존파괴 역학의 적용여부를 살펴보며, 서로 다른 피로모드 상태 하에서 하중크기의 상태에 따른 피로균열진전의 특성을 나타내었으며, 또한 주사형 전자현미경(scanning electron microscope)을 사용한 파단면 관찰을 통해 파괴 메카니즘을 살펴보았다.

• 한국주조공학회지
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• 제31권4호
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• pp.198-204
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• 2011

The present study was aimed to investigate the dependence of fatigue property on microporosity variation of low-pressure die-cast (LPDC) A356 alloy. The fatigue property of A356 alloy was evaluated through high cycle fatigue test, and the microporosity-terms used were the fractographic porosity measured from SEM observation on fractured surface and the volumetric porosity obtained through the density measurement using Archimedes's principle. The number of cycles to failure of A356 alloys depends obviously upon the variation of fractographic porosity, and can describe in terms of the defect susceptibility which depends on the microporosity variation at a given value of stress amplitude. The modified Basquin's equation was suggested through the combination of microporosity variation and static maximum tensile stress to fatigue strength coefficient. Using modified Basquin's equation, it could suggest that the maximum values of fatigue strength coefficient and exponent achievable in defect-free condition of A356 alloy are 265 MPa, -0.07, respectively.

• 마이크로전자및패키징학회지
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• 제8권4호
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• pp.25-33
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• 2001

Bi(0, 2.5, 4.8, 7.5, 10 wt%)가 첨가된 Sn-3.5Ag-xBi 합금을 주조 및 압연을 거쳐 준비하였다. 그 후, dog-bone형상의 시편의 안정한 미세 조직을 위해 열처리를 거친 후, 일정하중에 크리프 실험을 수행하였다. 2.5%Bi 첨가 합금의 경우, 크리프 저항성이 가장 우수하였으며, Bi가 더 첨가됨에 따라 크리프 저항성은 감소하였다. 합금의 응력 지수는 전형전인 전위 크리프에 의한 4를 나타내었으며, 10%Bi 시편의 경우, 입계 미끄러짐에 의한 2를 나타내었다. 0%Bi 합금의 경우, 연성 파괴 양상을 보인 반면, Bi 첨가 합금의 경우, 약간의 단면적 감소를 보이는 취성 파괴 양상을 보여주었다. 파단 시편의 미세 조직 관찰 결과, 응력축에 수직한 방향으로 기공이 관찰되었으며, 상당량의 입계 미끄러짐이 관찰되었다.

• 대한기계학회논문집A
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• 제37권10호
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• pp.1229-1237
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• 2013

본 연구에서는 증분소성이론에 기초한 구형압입이론을 크리프 물성을 평가하기 위한 압입이론으로 확장했다. 먼저 크리프변형률 기울기가 일정한 지점을 유효 응력-변형률속도 최적 관측지점으로 선정했다. 구형압입시험 전산모사를 이용해 크리프 지수와 계수를 변화시켜 가면서 이에 따른 재료의 거동을 무차원 변수들 (${\xi}$, ${\psi}$)의 회귀식으로 표현해 크리프 물성평가를 위한 새로운 수치 접근법을 구축했다. 이를 토대로 구형압입시험으로부터 재료의 크리프지수 및 계수를 예측하는 물성평가 프로그램을 개발했다. 압입 하중-변위 곡선으로부터 크리프지수는 평균 1.5%, 크리프계수는 평균 1.0% 이내의 오차범위에서 물성치들을 얻을 수 있다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1673-1675
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• 2000

The nonlinearity and degradation characteristics of $Pr_{6}O_{11}$-based ZnO varistors doped with, $Er_{2}O_3$ were investigated. The varistors were sintered at 1335$^{\circ}C$ in the addition range of 0.0 to 2.0 mol% $Er_{2}O_3$, respectively The varistor doped with $Er_{2}O_3$ exhibited more higher nonlinearity than that without $Er_{2}O_3$. Most of the varistors containing 0.5 mol% $Er_{2}O_3$ showed nonlinear exponent more than 70 and a excellent stability, which the variation rate of the varistor voltage and the nonlinear exponent is -0.85% and -1.43%. respectively, even under 3rd d.c stress, such as (0.80 $V_{1mA}/90^{\circ}C$/12h)+(0.85$V_{1mA}/115^{\circ}C$/12h)+(0.90$V_{1mA}/120^{\circ}C$/12h). Consequently, since $Pr_{6}O_{11}$-based 2nO varistors doped with 0.5 mol% $Er_{2}O_3$ have an excellent stability as well as good nonlinearity, it is expected to be usefully used to develop the advanced varistors in future.

• 한국전기전자재료학회논문지
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• 제13권5호
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• pp.402-410
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• 2000

The electrical properties and stability of Pr$_{6}$/O$_{11}$-based ZnO wvaristors consisting of ZnO-Pr$_{6}$/O$_{11}$-CoO-Dy$_{2}$/O$_{3}$ based ceramics were investigated in the Dy$_{2}$/O$_{3}$ additive content range o 0.0 to 2.0 mol%. The density was nearly constant 5.62 g/cm$^3$corresponding to 97% of theoretical density as Dy$_{2}$/O$_{3}$ additive content increases up to 0.5 mol%. However the density decreased as Dy$_{2}$/O sub 3/ additive content is further additive content. Pr$_{6}$/O$_{11}$-based ZnO varistors doped with 0.5mol% Dy$_{2}$/O$_{3}$ exhibited a good nonlinearity, which is 37.76 in the nonlinear exponent and 5.36 $mutextrm{A}$ in the leakage current. And they exhibited very stress (0.80 V$_{1mA}$/9$0^{\circ}C$/12h)+(0.85 V$_{1mA}$/115$^{\circ}C$/12h)+(0.95 V$_{1mA}$/1$25^{\circ}C$/12h). Consequently it was estimated that ZnO-0.5 mol% Pr$_{6}$/O$_{11}$-1.0 mol% CoO-0.5 mol% Dy$_{2}$/O$_{3}$ based ceramics will be sufficiently used as a basic composition to develop the advanced Pr$_{6}$/O$_{11}$-based ZnO varistors in the future.he future.uture.he future.

• Advances in nano research
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• 제16권5호
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• pp.509-519
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• 2024

In this study, the static analysis of carbon nanotube-reinforced composites (CNTRC) beams resting on a Winkler-Pasternak elastic foundation is presented. The developed theories account for higher-order variation of transverse shear strain through the depth of the beam and satisfy the stress-free boundary conditions on the top and bottom surfaces of the beam. To study the effect of carbon nanotubes distribution in functionally graded (FG-CNT), we introduce in the equation of CNT volume fraction a new exponent equation. The SWCNTs are assumed to be aligned and distributed in the polymeric matrix with different patterns of reinforcement. The rule of mixture is used to describe the material properties of the CNTRC beams. The governing equations were derived by employing Hamilton's principle. The models presented in this work are numerically provided to verify the accuracy of the present theory. The analytical solutions are presented, and the obtained results are compared with the existing solutions to verify the validity of the developed theories. Many parameters are investigated, such as the Pasternak shear modulus parameter, the Winkler modulus parameter, the volume fraction, and the order of the exponent in the volume fraction equation. New results obtained from bending and stresses are presented and discussed in detail. From the obtained results, it became clear the influence of the exponential CNTs distribution and Winkler-Pasternak model improved the mechanical properties of the CNTRC beams.

• 한국지반공학회지:지반
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• 제10권4호
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• pp.83-102
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• 1994

건조모래의 응력이력에 따른 Ko 값을 관찰하기 위하여 압밀링 형태의 Ko시험기를 새로이 고안하였으며, 이 시험기를 사용하여 수평응력을 측정하였다. 본 실험을 위하여 총 2형태의 단주기 Ko 재하/제하시험이 4종류의 상대밀도에 대하여 수행하였다. 실험결과, 처녀재하 시의 정지토압계수 K.은 모래의 내부마촹각 U'의 함수로서 K.. : 1-0.914sin0'와 같은 관계식을 얻을 수 있었다. 처녀제하 시의 정지토압계수 Kou는 Ko.과 과압밀비(OCR)의 함수로서 Ko.=Ko. (OCR)a으로 표시할 수 있으며, 지수 a는 대체로 상대밀도가 클수록 증가하는 경향을 보인다. 처녀재재하 시의 정지토압계수 Kor은 연직응력 Qv'가 증가함에 따라 쌍곡선 형태로 감소한다. 그리고 처녀재재하 시의 응력경로는 최소제하응력의 크기에 무관하게 최대선행점으로 복귀하며, 이곡선의 기울기 mr은 OCR이 클수로 증가한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.533-533
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• 2007

The stress effect of SiGe p-type metal oxide semiconductors field effect transistors(MOSFETs) has been investigated to compare device properties using Si bulk and partially depleted silicon on insulator(PD SOI). The electrical properties in SiGe PD SOI presented enhancements in subthreshold slope and drain induced barrier lowering in comparison to SiGe bulk. The reliability of gate oxides on bulk Si and PD SOI has been evaluated using constant voltage stressing to investigate their breakdown (~ 8.5 V) characteristics. Gate leakage was monitored as a function of voltage stressing time to understand the breakdown phenomena for both structures. Stress induced leakage currents are obtained from I-V measurements at specified stress intervals. The 1/f noise was observed to follow the typical $1/f^{\gamma}$ (${\gamma}\;=\;1$) in SiGe bulk devices, but the abnormal behavior ${\gamma}\;=\;2$ in SiGe PD SOI. The difference of noise frequency exponent is mainly attributed to traps at silicon oxide interfaces. We will discuss stress induced instability in conjunction with the 1/f noise characteristics in detail.