• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.152-156
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• 2000

Bi-thin films are fabricated by an ion beam sputtering, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below $730^{\circ}C$ and decreases linearly with temperature over $730^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_2O_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• Proceedings of the KIEE Conference
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• 2003.10a
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• pp.9-11
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• 2003

Image sticking, the phenomenon that the previously displayed pattern still remains after the image is changed into different image, is one of the most serious problem in realizing high picture quality. There are various methods decreasing the image sticking phenomenon. In this paper, we have tried to decrease boundary image sticking by reducing the discharge concentration phenomenon in the boundary of pattern using the new driving method that is applied to bias in the address electrode.

• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.190-195
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• 1995

The feature scale model for selective chemical vapor deopsition process was proposed and the simulation was performed to study the selectivity and uniformity of deposited thin film using Monte Carlo method and string algorithm. The effect of model parameters such as sticking coefficient, aspect ratio, and surface diffusion coefficient on the deposited thin film pattern was improved for lower sticking coefficient and higher aspect ratio. It was revealed that the selectivity loss ascrives to the surface diffusion. Different values of sticking coefficients on Si and on SiO2 surface greatly influenced the deopsited thin film profile. In addition, as the lateral wall angle decreased, the selectively deposited film had improved uniformity except the vicinity of trench wall. The optimum eondition for the most flat selective film deposition pattern is the case with low sticking coefficient and slightly increased surface diffusion coefficient.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.381-383
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• 2008

One of important factors responsible for image sticking in AC PDP is a sputtering of MgO layer under ionic bombardment. Sputtered Mg particles can migrate to the neighbor cells, where the migration makes a change of discharge condition. It leads to the local non-uniformity of a luminescence in the panel, resulting in the image sticking.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.10a
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• pp.59-63
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• 2000

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below $730^{\circ}C$ and decreases linearly with temperature over $730^{\circ}C$ This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_2O_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.204-206
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• 2005

Although intensive experiments have been performed to investigate the origin of boundary image sticking, one of major factors to determine display quality in AC PDP, it has not being reported clearly why it is occurred. The relationships between boundary image sticking and its possible origins such as phosphor degradation, temporal change of MgO layer, wall charge have been discussed. In this paper, we have analyzed characteristics of the boundary image sticking more clearly by the influence of local panel temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.300-303
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• 2001

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below $730^{\circ}C$ and decreases linearly with temperature over $730^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_{2}O_{3}$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi 2212 phase formation in the co-deposition process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.1
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• pp.80-84
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• 2000

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coeffi-cient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below 73$0^{\circ}C$ and decreases linearly with temperature over 73$0^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi\ulcornerO\ulcorner, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1640-1643
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• 2002

Image sticking, the phenomenon that the previously displayed pattern still remains after the image is changed into different image, is one of the most serious problem in realizing high picture quality. In this paper, we tried characterizing this undesirable feature in terms of the luminance and the intial firing voltage at ramp up time in reset period. It was found that the cell located at the boundary of previous image pattern show low firing voltage and high background luminance. And the results show that the degree of the image sticking is severely affected by discharge duration and the length of the sustain period.

• Journal of Electrochemical Science and Technology
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• v.7 no.3
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• pp.185-189
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• 2016

The coupled channel method via the Local Reflection (LORE) matrix is employed to investigate the quantum mechanical behavior of the sticking or adsorption and desorption of hydrogen (H) atom on bilayer graphene via the armchair edge. The sticking and desorption probabilities of H are calculated and are plotted against the initial translational energy of H. The sticking probability plot shows a barrierless reaction indicating that hydrogen is easily adsorbed on the armchair edge of graphene. The desorption probability plot, however, shows that desorption of H from the graphene sheets is an activated process with a barrier height of 4.19 eV suggesting that a strong bond exists between the adsorbed H atom and the edge carbon atom. Thus, temperatures higher than the operating temperatures (300 - 1500 K) of conventional fuel cells are necessary to release the adsorbed H atom from the armchair edge of graphene.