• Journal of the Korean Society of Manufacturing Process Engineers
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• v.7 no.3
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• pp.75-80
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• 2008

The progressive die performs a work of sheet metal processes with a piercing, notching, embossing, bending, drawing, cut-off etc. in many kinds of pressing. Now a days, these processes have been evaluated as a advanced tooling method to increase the productivity and high quality assurance. The first step analyzing of die design is production part review, then the arrangement drawing of product design and strip process layout design should be done as a next steps with a FEM simulation for its problem solution. After upper procedure were peformed, it was started to make the die, then tryout and its revision of the die and product quality, safety, productivity etc. were done continually. For the all of these process, we mobilized the theory and practice of sheet metal forming, die structure, the function and activity of die components, and the others of die machining, die material, heat treatment and know‐how so on. In this study the features of representative are production part analyzing through the FEM simulation of bending area with a considering spring back problem by DEFORM.

• Journal of Powder Materials
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• v.22 no.1
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• pp.10-14
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• 2015

In recent years, industrial demands for superior mechanical properties of powder metallurgy steel components with low cost are rapidly growing. Sinter hardening that combines sintering and heat treatment in continuous one step is cost-effective. The cooling rate during the sinter hardening process dominates material microstructures, which finally determine the mechanical properties of the parts. This research establishes a numerical model of the relation between various cooling rates and microstructures in a sinter hardenable material. The evolution of a martensitic phase in the treated microstructure during end quench tests using various cooling media of water, oil, and air is predicted from the cooling rate, which is influenced by cooling conditions, using the finite element method simulations. The effects of the cooling condition on the microstructure of the sinter hardening material are found. The obtained limiting size of the sinter hardening part is helpful to design complicate shaped components.

• Journal of Applied Biological Chemistry
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• v.51 no.3
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• pp.95-101
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• 2008

The gene encoding a putative esterase of Xanthomonas oryzae pv. oryzae was cloned using PCR technique. The gene was expressed with His6 tag in E. coli. One-step purification of the recombinant esterase with Ni-NTA resin resulted in one band by SDS-PAGE analysis. The purified enzyme showed a molecular weight of 30 kDa, as expected, therefore the enzyme was a mononer. The enzyme was the most active toward p-nitrophenyl (p-NP) acetate and p-NP-butyrate to a lesser extent. However, the enzyme could not hydrolyze p-NP-myristate, palmitate, and stearate. Therefore, the enzyme is considered as an esterase, very different from lipase. The purified esterase had optimal pH at around 8.0 and was stable in a broad range of pH values. The optimal temperature ranged from 30 to $40^{\circ}C$, and the residual activity observed after heat treatment at $55^{\circ}C$ for 20 min was 72 % of the initial activity. The activity was inhibited by the presence of copper and cobalt ions.

• Progress in Superconductivity and Cryogenics
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• v.5 no.1
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• pp.31-34
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• 2003

Bi-2223 superconducting wires with 55 filaments were fabricated by stacking, drawing process with different heat-treatment histories. Two kinds of powders were prepared. One was pre-annealed at 760-820 $^{\circ}C$ and low oxygen partial pressure, and the other was only calcined state. Before rolling process, round wires were pre-annealed at 760 -820 $^{\circ}C$ and in a low oxygen partial pressure. We confirmed that pre-annealing step was to transform Bi-2212 orthorhombic structure from Bi-2212 tetragonal structure and to reduce the formation of second phases at superconducting wire. However Bi-2223 phases were formed at higher pre-annealing temperature. Bi-2223 conductor was needed frequently annealing at low temperature because pre-annealing at precursor powder brought about decrease in workability. We could achieve highest Je of 6500 A/$\textrm{cm}^2$ at the tape using Bi-2212 orthorhombic phase by introduced slightly overheating at the 1st sintering process.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.53-53
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• 2003

There has been increasing interest in the fabrication of nano-sized structures because of their various advantages and applications. Anodic Aluminum Oxide (AAO) is one of the most successful methods to obtain highly ordered nano pores and channels. Also It can be obtained diverse pore diameter, density and depth through the control of anodization condition. The three types of substrates were used for anodization; sheets of Aluminum on Si wafer and Aluminum on Mo-coated Si wafer. In Aluminum sheet, a highly ordered array of nanoholes was formed by the two step anodization in 0.3M oxalic acid solutions at 10$^{\circ}C$ After the anodization, the remained aluminum was removed in a saturated HgCl$_2$ solution. Subsequently, the barrier layer at the pore bottom was opened by chemical etching in phosphoric acid. Finally, we can obtain the through-channel membrane. In these processes, the effect of various parameters such as anodizing voltage, anodizing time, pore widening time and pre-heat treatment are characterized by FE-SEM (HITACH-4700). The pore size. density and growth rate of membrane are depended on the anodizing voltage and temperature respectively. The pore size is proportional to applied voltage and pore widening time The pore density can be controlled by anodizing temperature and voltage.

• Progress in Superconductivity
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• v.4 no.2
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• pp.176-179
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• 2003

A lot of efforts have been focused on the optimization of PIT parameters for Bi-2223/Ag wire. Bi-2223 superconducting wires with 55 filaments were fabricated by stacking, drawing process. Before rolling process, round wires were pre -annealed at 760 - 820 $^{\circ}C$ and low oxygen partial pressure. We confirmed that pre-annealing step was to transform Bi-2212 orthorhombic structure from Bi-2212 tetragonal structure and to reduce the formation of second phases. However Bi-2223 phases also were formed at higher than 76$0^{\circ}C$ of pre-annealing temperature. The engineering critical current densities (Je) of Bi-22231Ag tapes were sintered at low oxygen partial pressure were higher than t hat of the wires sintered at air. We could achieve 6500 A/${cm}^2$ of Je for the tape that was initially kept at slightly higher temperature than that of normal heat treatment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.6
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• pp.544-551
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• 2008

We have studied the dielectric characteristics of low-k interlayer dielectric materials fabricated by PECVD for various precursor's flow rates. BTMSM precursor was introduced with the flow rates from 42 sccm to 60 sccm by 2 sccm step in the constant flow rate of 60 sccm $O_2$. The absorption intensities of Si-O-$CH_x$ bonding group and Si-$CH_x$ bonding group changed synchronously for the variation of precursor flow rate, but the intensity of Si-O-Si(C) responded asynchronously with the $CH_x$ combined bonds. The heat treatment reduced the FTIR absorption intensity of Si-O-$CH_x$ bonding group and Si-$CH_x$ bonding group but increased the intensity of Si-O-Si(C). The nanopore and free space formed by the increasement of caged link mode and cross link mode of Si-O-Si(C) group implied the origin of low-k SiOCH films.

• Applied Chemistry for Engineering
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• v.9 no.2
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• pp.214-219
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• 1998

The transparent conducting tin oxide films were deposited on g1ass substrates by the ultrasonic spray pyrolysis. Examined were effects of deposition parameters on the electrical resistance, optical transmittance, crystal structure, and thickness of tin oxide films. As both the deposition time and concentration of tin(IV) chloride increase, the deposited tin oxide films exhibited the decrease of electrical resistance and optical transmittance in the visible and near infrared region. With increasing heat-treatment temperature in air, the deposited tin oxide films showed the enhanced electrical resistance and optical transmittance. This study suggests that the ultrasonic spray pyrolysis may be a promising deposition technique effectively to prepare transparent conducting films of good quality in a single step.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.340-342
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• 1995

We prepared $LiCo_{1-x}Ni_{x}O_2$ by reacting stoichiometric mixture of LiOH.$H_2O$, $CoCO_3$.$xH_2O$ and $Ni(OH)_2$(mole ratio respectively) and heating at $850^{\circ}C$ for 5n. In the result of X-ray diffraction analysis, along fluctuation of the function of x in $LiCo_{1-x}Ni_{x}O_2$(003) peak and (104) peak indensities and ratio were varied. We awared through XRD that from 0 to 0.5 at x in $LiCo_{1-x}Ni_{x}O_2$ is well formed for hexagonal structure at one step heat treatment($850^{\circ}C$), but if Ni involve at $LiCo_{1-x}Ni_{x}O_2$ hexagonal structure is not well formed. In the result of charge/discharge tests charge/discharge capacity and effiency is different about various cathode. Therefore, the appropriate charge/discharge method must be selected for good characteristics.

• Journal of the Korean Ceramic Society
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• v.33 no.8
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• pp.855-862
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• 1996

The nucleation and the crystal growth rates of Ge-Se-Te chalcogenide glass by two step heat-treatment and its effect on the mechanical optical properties and water-resistance were determined. The maximum nuclea-tion and crystal growth rate were 2.1$\times$103/mm3 .min at 28$0^{\circ}C$ and 0.4${\mu}{\textrm}{m}$/min at 33$0^{\circ}C$ respectively. When the crystal volume fraction with crystal size $1.5mutextrm{m}$ was about 4% the (hardness and fracture toughness were about 117kg/mm2 and 6.0 MPa.mm1/2)respectively. The weight loss of crystallized glass in water was lower than parent glass($25^{\circ}C$ for 32 hrs : 0.03% 8$0^{\circ}C$ for 16 hrs : 0.1%) as 0.01% at $25^{\circ}C$, 0.03% at 8$0^{\circ}C$ for 16 hrs : 0.1%) at $25^{\circ}C$ 0.03% at 8$0^{\circ}C$ respectively. The IR-transmittance decreased with increasing crystal size and crystal volume fraction. The IR-transmittance of crystallized glass with the crystal size of $1.5mutextrm{m}$ (crystal volume fraction : 4%) presented 56% which was about 4% lower than that of parent glass.