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Study on the Limitation of AVO Responses Shown in the Seismic Data from East-sea Gas Reservoir (동해 가스전 탄성파 자료에서 나타나는 AVO 반응의 한계점에 대한 고찰)

  • Shin, Seung-Il;Byun, Joong-Moo;Choi, Hyung-Wook;Kim, Kun-Deuk;Ko, Seung-Won;Seo, Young-Tak;Cha, Young-Ho
    • Geophysics and Geophysical Exploration
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    • v.11 no.3
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    • pp.242-249
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    • 2008
  • Recently, AVO analysis has been widely used in oil exploration with seismic subsurface section as a direct indicator of the existence of the gas. In the case of the deep reservoirs like the gas reservoirs in the East-sea, it is often difficult to observe AVO responses in CMP gathers even though the bright spots are shown in the stacked section. Because the reservoir becomes more consolidated as its depth deepens, P-wave velocity does not decrease significantly when the pore fluid is replaced by the gas. Thus the difference in Poisson's ratio, which is a key factor for AVO response, between the reservoir and the layer above it does not increase significantly. In this study, we analyzed the effects of Poisson's ratio difference on AVO response with a variety of Poisson's ratios for the upper and lower layers. The results show that, as the difference in Poisson's ratio between the upper and lower layers decreases, the change in the reflection amplitude with incidence angle decreases and AVO responses become insignificant. To consider the limitation of AVO responses shown in the gas reservoir in East-sea, the velocity model was made by simulation Gorae V structure with seismic data and well logs. The results of comparing AVO responses observed from the synthetic data with theoretical AVO responses calculated by using material properties show that the amount of the change in reflection amplitude with increasing incident angle is very small when the difference in Poisson's ratio between the upper and lower layers is small. In addition, the characteristics of AVO responses were concealed by noise or amplitude distortion arisen during preprocessing. To overcome such limitations of AVO analysis of the data from deep reservoirs, we need to acquire precisely reflection amplltudes In data acquisition stage and use processing tools which preserve reflection amplitude in data processing stage.

Sedimentary History and Tectonics in the Southeastern Continental Shelf of Korea based on High Resolution Shallow Seismic Data. (고해상탄성파탐사자료에 의한 한국남동대륙붕의 퇴적사 및 조구조운동)

  • Min Geon Hong;Park Yong Ahn
    • The Korean Journal of Petroleum Geology
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    • v.5 no.1_2 s.6
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    • pp.1-8
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    • 1997
  • Seismic stratigraphic analysis of the high resolution profiles obtained from the southeastern shelf of Korea divided the deposits into 4 sequences; 1) sequence D, 2) sequence C, 3) sequence B and 4) sequence A (Holocene sediments). Sequence D was deposited in shallow-water environment at west of the Yangsan Fault as the basin subsided. On the other hand, the eastern part was formed at the slope front. Landward part of the slope-front fill sediments were eroded and redeposited nearby slope due to the syndepositional tilting of the basin. This tilting probably resulted from the continuous closing of the Ulleung Basin. Sequence C is made of stacked successions of the lowstand fluvial sediments, transgressive sediments and marine highstand sediments derived from the paleo-river in the western part of the Yangsan Fault. Sequence C in the eastern part of the Yanshan Fault was formed at the shelf break. Progradation of the lowstand sediments resulted in broadening of the shelf. Sequence C in the eastern part was also tilted but the tilting was weaker than in Sequence D. During the formation of sequence B the tilting stopped and the point source instead of the line source started in both sides of the Yangsan Fault. Sequence B was composed of the highstand systems tract partially preserved around the Yokji island, lowstand systems tract mainly preserved in the Korea Trough and transgressive systems tract. After the stop of the tilting, the force of compression due to the closing of the Ulleung Basin may be released by the strike-slip faults instead of tilting.

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Economics and Ground Cover Growth Characteristics of a New Method of Shallow Soil Artificial Foundation Planting (저토심 인공지반 녹화공법의 경제성 및 도입 가능한 지피식물의 생육특성)

  • Choi, Jin-Woo;Kim, Hag-Kee;Lee, Kyong-Jae;Kang, Hyun-Kyung
    • Journal of the Korean Institute of Landscape Architecture
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    • v.37 no.5
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    • pp.98-108
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    • 2009
  • The purpose of this study is to analyze the characteristics of limited methods, economics and breeding appropriateness of native and imported ground cover plants in the methodology of a shallow soil rooftop garden. The new shallow soil rooftop gardening method uses a total of 13cm in soil thickness, including 4.5cm of top soil on a 7.5cm rock-wool-mat stacked onto a 1cm roll-type-draining plate. The total construction cost for each method of soil level within the design price standard for SEDUM BLOCK is 89,433won/$m^2$, and for DAKU is 92,550won/$m^2$. By comparing those two methods, the construction cost of the shallow soil artificial foundation methodology is 45,000won/$m^2$; this shows the new method is 50% less expensive than the existing method of shallow soil rooftop gardening. The experiment was executed on the rooftop of the Korean National Housing Corporation to ensure validity of the shallow soil artificial foundation planting, and the sample plants which were imported and grown now in native covering. A list investigating the growing plants was made of the cover rate in each plant class, both while alive and the dry plant weight. The native ground cover plants, Sedum kamtschaticum, Sedum middendorffianum, Allium senescens, Sedum sarmentosum, Aquilegia buergariana, and Caryopteris incana increased the cover rate, live weight and dry weight in the shallow soil artificial foundation method. Among the imported cover plants, Sedum sprium and Sedum reflexum, the cover rate increased and growth conditions improved. However, some species needed weed maintenance. After examination with the less expensive shallow soil artificial foundation method and growth analysis, it was found that rooftop gardens are a low-cost option and the growth of plants is great. This result shows the new method can contribute to the proliferation of rooftop gardens in urban settings.

A Study on the Design & Construction Method of Traditional Landscape Space through the 『Imwongyeongjeji』 「Seomyongji」 and the 'Standard Specification for Repairing Cultural Heritages' (『임원경제지』 「섬용지」와 문화재수리 표준시방서를 통해 본 전통조경공간 설계 시공방법)

  • Lee, Jung-Han
    • Journal of the Korean Institute of Traditional Landscape Architecture
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    • v.37 no.4
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    • pp.1-10
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    • 2019
  • The purpose of this study is to examine the design & construction methods of the traditional landscape space of the past and the repair and maintenance of cultural heritages to maintain it today. To this end, the method of narrative description, process extraction and construction related to traditional landscaping were compared to each other based on the 『Imwongyeongjeji』 「Seomyongji」 and 'Standard Specification for Repairing Cultural Heritages'. The results are as follows; First, to analyze at the description methods of the 『Imwongyeongjeji』 「Seomyongji」 and 'Standard Specification for Repairing Cultural Heritages' and related processes in the field of traditional landscaping. 『Imwongyeongjeji』 「Seomyongji」 was an encyclopedia of the overall construction method of the living space, describing the location, effect, and advantages and disadvantages of each component and presenting quantitative figures to institutionalize the construction of traditional landscaping spaces. 'Standard Specification for Repairing Cultural Heritages' presented the entire process of repairing cultural heritages, and it is becoming a kind of guide for reference at the site. Among them, foundation construction, roof construction, landscape construction, and fence construction were drawn as items that could be applied to traditional landscaping areas. Second, the traditional landscape space construction method was divided into the processes of foundation construction, roof construction, landscaping construction, and fence construction. Foundation construction is a way of repeating the process of land-tramping. During the construction of the roof, the tile-roofed building was built on top of the rafters and roofed with tiles. And thatched roof was made to a number of rice straws bundles to cover the roof one after the other. Instead of tiles, the stone roof was made of thin and wide stones, and the wooden boards were used for the single roof and the bark roof were constructed with many layers of dried corrugations. Landscape construction mainly consists of the Paving technique through tramping rubble and the construction of terraced flower by planting stone, plants, and shrubs on the top. According to the building materials, the wall construction was derived from the earth-stacked earthen wall, stone walls using stone and clay, marble walls made of tile patterns, and the construction of a board wall using a wood board as a wall. Third, comparing the construction methods of the 『Imwongyeongjeji』 「Seomyongji」 and 'Standard Specification for Repairing Cultural Heritages', 『Imwongyeongjeji』 「Seomyongji」 focuses on standardizing the construction methods to create a new traditional space. There is a difference in the setting of the scope of the 『Imwongyeongjeji』 「Seomyongji」 and the construction because 'Standard Specification for Repairing Cultural Heritages' provides the overall construction procedure considering the diversity of the cultural heritages. In addition, the traditional landscape space used to be a residential space in the past, but today, the maintenance process of the already established facilities as designated cultural heritages has been carried out, and construction methods have been added to create viewing conditions. In terms of the succession of traditional knowledge, some similar methods were found in the repair of cultural assets today, and some cases were also confirmed in the reconstruction of traditional technologies such as application of some materials or mix, separation of added facilities and introduction of efficient construction methods.

Acoustic Characteristics of Gas-related Structures in the Upper Sedimentary Layer of the Ulleung Basin, East Sea (동해 울릉분지 퇴적층 상부에 존재하는 가스관련 퇴적구조의 음향 특성연구)

  • Park, Hyun-Tak;Yoo, Dong-Geun;Han, Hyuk-Soo;Lee, Jeong-Min;Park, Soo-Chul
    • Economic and Environmental Geology
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    • v.45 no.5
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    • pp.513-523
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    • 2012
  • The upper sedimentary layer of the Ulleung Basin in the East Sea shows stacked mass-flow deposits such as slide/slump deposits in the upper slope, debris-flow deposits in the middle and lower slope, and turbidites in the basin plain. Shallow gases or gas hydrates are also reported in many area of the Ulleung Basin, which are very important in terms of marine resources, environmental changes, and geohazard. This paper aims at studying acoustic characteristics and distribution pattern of gas-related structures such as acoustic column, enhanced reflector, dome structure, pockmark, and gas seepage in the upper sedimentary layer, by analysing high-resolution chirp profiles. Acoustic column shows a transparent pillar shape in the sedimentary layer and mainly occurs in the basin plain. Enhanced reflector is characterized by an increased amplitude and laterally extended to several tens up kilometers. Dome structure is characterized by an upward convex feature at the seabed, and mainly occurs in the lower slope. The pockmark shows a small crater-like feature and usually occurs in the middle and lower slope. Gas seepage is commonly found in the middle slope of the southern Ulleung Basin. These gas-related structures seem to be mainly caused by gas migration and escape in the sedimentary layer. The distribution pattern of the gas-related structures indicates that formation of these structures in the Ulleung Basin is controlled not only by sedimentary facies in upper sedimentary layer but also by gas-solubility changes depending on water depth. Especially, it is interpreted that the chaotic and discontinuous sedimentary structures of debris-flow deposits cause the facilitation of gas migration, whereas the continuous sedimentary layers of turbidites restrict the vertical migration of gases.

About Short-stacking Effect of Illite-smectite Mixed Layers (일라이트-스멕타이트 혼합층광물의 단범위적층효과에 대한 고찰)

  • Kang, Il-Mo
    • Economic and Environmental Geology
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    • v.45 no.2
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    • pp.71-78
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    • 2012
  • Illite-smectite mixed layers (I-S) occurring authigenically in diagenetic and hydrothermal environments reacts toward more illite-rich phases as temperature and potassium ion concentration increase. For that reason, I-S is often used as geothermometry and/or geochronometry at the field of hydrocarbons or ore minerals exploration. Generally, I-S shows X-ray powder diffraction (XRD) patterns of ultra-thin lamellar structures, which consist of restricted numbers of sillicate layers (normally, 5 ~ 15 layers) stacked in parallel to a-b planes. This ultra-thinness is known to decrease I-S expandability (%S) rather than theoretically expected one (short-stacking effect). We attempt here to quantify the short stacking effect of I-S using the difference of two types of expandability: one type is a maximum expandability ($%S_{Max}$) of infinite stacks of fundamental particles (physically inseparable smallest units), and the other type is an expandability of finite particle stacks normally measured using X-ray powder diffraction (XRD) ($%S_{XRD}$). Eleven I-S samples from the Geumseongsan volcanic complex, Uiseong, Gyeongbuk, have been analyzed for measuring $%S_{XRD}$ and average coherent scattering thickness (CST) after size separation under 1 ${\mu}m$. Average fundamental particle thickness ($N_f$) and $%S_{Max}$ have been determined from $%S_{XRD}$ and CST using inter-parameter relationships of I-S layer structures. The discrepancy between $%S_{Max}$ and $%S_{XRD}$ (${\Delta}%S$) suggests that the maximum short-stacking effect happens approximately at 20 $%S_{XRD}$, of which point represents I-S layer structures consisting of ca. average 3-layered fundamental particles ($N_f{\approx}3$). As a result of inferring the $%S_{XRD}$ range of each Reichweite using the $%S_{XRD}$ vs. $N_f$ diagram of Kang et al. (2002), we can confirms that the fundamental particle thickness is a determinant factor for I-S Reichweite, and also that the short-stacking effect shifts the $%S_{XRD}$ range of each Reichweite toward smaller $%S_{XRD}$ values than those that can be theoretically prospected using junction probability.

A Basic Study for Sustainable Analysis and Evaluation of Energy Environment in Buildings : Focusing on Energy Environment Historical Data of Residential Buildings (빌딩의 지속가능 에너지환경 분석 및 평가를 위한 기초 연구 : 주거용 건물의 에너지환경 실적정보를 중심으로)

  • Lee, Goon-Jae
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.18 no.1
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    • pp.262-268
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    • 2017
  • The energy consumption of buildings is approximately 20.5% of the total energy consumption, and the interest in energy efficiency and low consumption of the building is increasing. Several studies have performed energy analysis and evaluation. Energy analysis and evaluation are effective when applied in the initial design phase. In the initial design phase, however, the energy performance is evaluated using general level information, such as glazing area and surface area. Therefore, the evaluation results of the detailed design stage, which is based on the drawings, including detailed information of the materials and facilities, will be different. Thus far, most studies have reported the analysis and evaluation at the detailed design stage, where detailed information about the materials installed in the building becomes clear. Therefore, it is possible to improve the accuracy of the energy environment analysis if the energy environment information generated during the life cycle of the building can be established and accurate information can be provided in the analysis at the initial design stage using a probability / statistical method. On the other hand, historical data on energy use has not been established in Korea. Therefore, this study performed energy environment analysis to construct the energy environment historical data. As a result of the research, information classification system, information model, and service model for acquiring and providing energy environment information that can be used for building lifecycle information of buildings are presented and used as the basic data. The results can be utilized in the historical data management system so that the reliability of analysis can be improved by supplementing the input information at the initial design stage. If the historical data is stacked, it can be used as learning data in methods, such as probability / statistics or artificial intelligence for energy environment analysis in the initial design stage.

Excimer-Based White Phosphorescent OLEDs with High Efficiency

  • Yang, Xiaohui;Wang, Zixing;Madakuni, Sijesh;Li, Jian;Jabbour, Ghassan E.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.1520-1521
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    • 2008
  • There are several ways to demonstrate white organic light emitting diodes (OLEDs) for displays and solid state lighting applications. Among these approaches are the stacked three primary or two complementary colors light-emitting layers, multiple-doped emissive layer, and excimer and exciplex emission [1-10]. We report on white phosphorescent excimer devices by using two light emitting materials based on platinum complexes. These devices showed a peak EQE of 15.7%, with an EQE of 14.5% (17 lm/W) at $500\;cd/m^2$, and a noticeable improvement in both the CIE coordinates (0.381, 0.401) and CRI (81). Devices with the structure ITO/PEDOT:PSS/TCTA (30 nm)/26 mCPy: 12% FPt (10 nm) /26 mCPy: 2% Pt-4 (15 nm)/BCP (40 nm)/CsF/Al [device 1], ITO/PEDOT:PSS/TCTA (30 nm)/26 mCPy: 2% Pt-4 (15 nm)/26 mCPy: 12% FPt (10 nm)/BCP (40 nm)/CsF/Al [device 2], and ITO/PEDOT:PSS/TCTA (30 nm)/26 mCPy: 2% Pt-4: 12% FPt (25 nm)/BCP (40 nm)/CsF/Al [device 3] were fabricated. In these cases, the emissive layer was either the double-layer of 26 mCPy:12% FPt and 15 nm 26 mCPy: 2% Pt-4, or the single layer of 26mCPy with simultaneous doping of Pt-4 and FPt. Device characterization indicates that the CIE coordinates/CRI of device 2 were (0.341, 0.394)/75, (0.295, 0.365)/70 at 5 V and 7 V, respectively. Significant change in EL spectra with the drive voltage was observed for device 2 indicating a shift in the carrier recombination zone, while relatively stable EL spectra was observed for device 1. This indicates a better charge trapping in Pt-4 doped layers [10]. On the other hand, device 3 having a single light-emitting layer (doped simultaneously) emitted a board spectrum combining emission from the Pt-4 monomer and FPt excimer. Moreover, excellent color stability independent of the drive voltage was observed in this case. The CIE coordinates/CRI at 4 V ($40\;cd/m^2$) and 7 V ($7100\;cd/m^2$) were (0.441, 0.421)/83 and (0.440, 0.427)/81, respectively. A balance in the EL spectra can be further obtained by lowering the doping ratio of FPt. In this regard, devices with FPt concentration of 8% (denoted as device 4) were fabricated and characterized. A shift in the CIE coordinates of device 4 from (0.441, 0.421) to (0.382, 0.401) was observed due to an increase in the emission intensity ratio of Pt-4 monomer to FPt excimer. It is worth noting that the CRI values remained above 80 for such device structure. Moreover, a noticeable stability in the EL spectra with respect to changing bias voltage was measured indicating a uniform region for exciton formation. A summary of device characteristics for all cases discussed above is shown in table 1. The forward light output in each case is approximately $500\;cd/m^2$. Other parameters listed are driving voltage (Bias), current density (J), external quantum efficiency (EQE), power efficiency (P.E.), luminous efficiency (cd/A), and CIE coordinates. To conclude, a highly efficient white phosphorescent excimer-based OLEDs made with two light-emitting platinum complexes and having a simple structure showed improved EL characteristics and color properties. The EQE of these devices at $500\;cd/m^2$ is 14.5% with a corresponding power efficiency of 17 lm/W, CIE coordinates of (0.382, 0.401), and CRI of 81.

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Interface structure and anisotropic strain relaxation of nonpolar a-GaN on r-sapphire

  • Gong, Bo-Hyeon;Jo, Hyeong-Gyun;Song, Geun-Man;Yun, Dae-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.31-31
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    • 2010
  • The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).

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Superconducting Characteristics of Melt Spun $YBa_2Cu_3Ag_{15}$ and $YbBa_2Cu_3Ag_x$ (x=5, 16 and 53) Microcomposites (융체방사법으로 제작한 $YBa_2Cu_3Ag_{15}$$YbBa_2Cu_3Ag_x$ (x=5, 16 and 53)미세복합재의 초전도 특성)

  • Song, Myeong-Yeop
    • Korean Journal of Materials Research
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    • v.5 no.7
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    • pp.880-887
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    • 1995
  • Melt spun YB $a_2$C $u_3$A $g_{15}$ and YbB $a_2$C $u_3$A $g_{x}$(x=5, 16 and 53) precursor alloy ribbons were oxidized at 263~322$^{\circ}C$, and heat-treated at 872~89$0^{\circ}C$ under 1.0atm oxygen pressure. In addition, about ten ribbons were stacked and coupled by pressing, and then followed the same heat treatment. YB $a_2$C $u_3$ $O_{7-{\delta}}$(1-2-3) or YbB $a_2$C $u_3$ $O_{7-{\delta}}$(1-2-3) phase was formed in both the ribbons and the multilayered specimens. The formed 1-2-3 phases were not texturized in all the ribbons, but slightly texturized in the multilayered specimens. $J_{c}$ was not achieved in all the ribbons at 77K and zero magnetic field. Among the multilayered specimens, YB $a_2$C $u_3$A $g_{15}$ and YbB $a_2$C $u_3$A $g_{16}$ showed $J_{c}$ of 260 and 180A/$\textrm{cm}^2$, respectively. YB $a_2$C $u_3$A $g_{15}$ and YbB $a_2$C $u_3$A $g_{16}$ are considered to be the appropriate compositions in producing textured superconducting oxides with improved $J_{c}$ by pressing. Onset critical temperature ( $T_{on}$ ) of the multilayered YB $a_2$C $u_3$A $g_{15}$ was 92K while those of YbB $a_2$C $u_3$A $g_{x}$(x=5 , 16 and 53) were 88~90K. , 16 and 53) were 88~90K.

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