• 반도체디스플레이기술학회지
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• 제18권1호
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• pp.1-4
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• 2019

Reactive sputtering is widely used because of its high deposition rate and high step coverage. The deposition layer is often affected by target poisoning because the target conditions are changed, as well, by reactive gases during the initial stage of sputtering process. The reactive gas affects the deposition rate and process stability (target poisoning), and it also leads unintended oxide interlayer formation. Although the target poisoning mechanism has been well known, little attention has been paid on understanding the interlayer formation during the reactive sputtering. In this research, we studied the interlayer formation during the reactive sputtering. A DC magnetron sputtering process is carried out to deposit an aluminum oxide film on a silicon wafer. From the real-time process monitoring and material analysis, the target poisoning phenomena changes the reactive gas balance at the initial stage, and affects the interlayer formation during the reactive sputtering process.

• 열처리공학회지
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• 제29권2호
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• pp.62-65
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• 2016

TIO thin films were deposited on the poly-carbonate substrates with RF magnetron sputtering under different sputtering power condition to investigate the influence of deposition rate on the electrical and optical properties of the films. Although, all films have the similar carrier concentration, the films prepared at a lower deposition rate of 4 nm/min show a higher mobility of $5.96cm^2\;V^{-1}S^{-1}$ due to the low surface roughness. In addition, optical transmittance is also influenced by a deposition rate. Based on the figure of merit, it can be concluded that the lower deposition rate effectively enhances the opto-electrical performance of IGZO films for use as transparent conducting oxides in flexible display applications.

• 한국표면공학회지
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• 제35권2호
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• pp.113-121
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• 2002

We have investigated insulating properties of $SiO_2$ interlayer for the thin film strain gauge, which were prepared by RF magnetron sputtering method in various deposition conditions, such as Ar pressure, gas flow rates and sputtering gases. SEM, AFM and FT-IR techniques were used to analyze its structures and composition. As the Ar pressure and the flow rate increased, the insulating interlayer showed low insulating resistance due to its porous structure and defects. Oxygen deficiency in $SiO_2$ was decreased as fabricated by hydrogen reactive sputtering. We could enhance the surface mobility of sputtered adatoms by using Ar/$H_2$ sputtering gas and obtain a good surface roughness and insulating property. The optimum insulating resistance of 9.22 G$\Omega$ was obtained in Ar/30% $H_2$ mixed gas, flow rate 10sccm, and 1mTorr.

• 한국재료학회지
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• 제9권5호
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• pp.533-537
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• 1999

ATO(Sb doped $SnO_2$) thin films whose thicknesses were 600, 1100 and $2100\AA$ were prepared by DC magnetron sputtering method. They showed the lowest resistivity at DC sputtering power 0.24kW and had lower resistivity with increasing thickness. The power dependence of resistivity among ATO thin films was also different with thickness. The increase of carrier concentration in ATO thin films was responsible for the decrease of resistivity with thickness increase. ATO thin films which were prepared at 30sccm oxygen flow rate showed a great change of sheet resistance under 1M HCl solution. The investigation of SAM(Scanning Auger Microprobe) revealed that oxygen atomic percentage on the surface of ATO thin films was changed. The decrease of sheet resistance also occurred when ATO thin films, prepared at 30sccm oxygen flow rate, were exposed to air for a long period of time. For this reason, it was considered that the desorption of oxygen on ATO surface was accelerated by HCl.

• E2M - 전기 전자와 첨단 소재
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• 제8권2호
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• pp.196-203
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• 1995

We presented Tungsten and Tungsten Nitride thin films deposited by RF and DC sputtering. It deposited at various conditions that determining the resistivity and sheet resistivity by stabilizing the basic theory. We investigated properties of the resistivity and sheet resistivity of these films under various conditions, temperature of substrate, flow rate of the argon gas and content of nitrogen from nitrogen-argon mixtures. As the temperature of substrate increased and the flow rate of the argon gas decreased, the resistivities of these films reduced by structural transformation. We found that these resistivities were depend on the temperature of substrate, flow rate and electric power. Very highly resistive tungsten films obtained at 10W RF power. On the contrary, we found that films deposited by DC sputtering, from which very lowly resistive tungsten films were obtained. Tungsten nitride thin films deposited by reactive DC sputtering and the resistivities of these films increased as the content of nitrogen gas increased from nitrogen-argon mixture. And also we found the results show very good agreement, compared with experimental data.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1874-1875
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• 2004

A high rate deposition sputtering process of magnesium oxide thin film in oxide mode has been developed using a 20 kW unipolar pulsed power supply. The powersupply was operated at a maximum constant voltage of 500 V and a constant current of 40 A. The pulse repetition rate and the duty were changed in the ranges of 10 ${\sim}$ 50 kHz and 10 ${\sim}$ 60 %, respectively. The deposition rate increased with increasing incident power to the target. Maximum incident power to the magnesium target was obtained by the control of frequency, duty and current. The deposition rate of a moving state was 9 nm m/min at the average power of 1.5 kW. This technique is proposed to apply high through-put sputtering system for plasma display panel.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.1043-1046
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• 2001

In this study, characteristics of LPB having gold anode fabricated by sputtering methode were analyzed. As results, The 1st efficiency and the impedance characteristics of LPB decreased with increased gold coated on anode and current collector. But the rate characteristics and charge-discharge cycling characteristics increased with increased gold coated on anode and current collector. During 2C discharge of the rate characteristics test, the rate characteristics of LPB without gold coated and the rate characteristics of LPB with gold coated in twice were 159mAh/g and 189mAh/g, respectively. The discharge capacity was gradually degreased with the discharge cycling to about 20th cycles. But LPB with gold coated in twice was stabilized than LPB without gold coated.

• 한국수소및신에너지학회논문집
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• 제14권1호
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• pp.8-16
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• 2003

$TiO_2$ thin films were deposited by DC reactive magnetron sputtering with variations in sputtering parameter such as Ar and $O_2$ flow rate, DC power, substrate temperature and magnetic field. Deposition rate, crystal structure, chemical bond of $TiO_2$ films on the deposition conditions were investigated by Alpha-step, X-ray Diffractometer(XRD), X-ray Photoelectron Spectroscopy(XPS). When the DC power was applied at 500watt, deposition rate of $TiO_2$ film was about 480A/min. $TiO_2$ films coated under the deposition condition of 15sccm Ar and 7~10sccm $O_2$ flow rate was only observed anatase phase. With increasing substrate temperature from RT to $300^{\circ}C$, crystal orientation of $TiO_2$ films variously became.

• 한국전기전자재료학회논문지
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• 제22권7호
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• pp.595-601
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• 2009

For the silicon oxide $(SiO_x)$ films prepared by using the facing target sputtering (FTS) apparatus that was manufactured to enhance the preciseness of the fabricated thin-film and sputtering yield rate by forming a higher-density plasma in the electrical discharge space for using it as a thin-film passivation system for flexible organic light emitting devices (FOLEDs). The deposition characteristics were investigated under various process conditions, such as array of the cathode magnets, oxygen concentration$(O_2/Ar+O_2)$ introduced during deposition, and variations of distance between two targets and working pressure. We report that the optimum conditions for our FTS apparatus for the deposition of the $SiO_x$ films are as follows: $d_{TS}\;and\;d_{TT}$ are 90mm and 120mm, respectively and the maximum deposition rate is obtained under a gas pressure of 2 mTorr with an oxygen concentration of 3.3%. Under this optimum conditions, it was found that the $SiO_x$ film was grown with a very high deposition rate of $250{\AA}$/min by rf-power of $4.4W/cm^2$, which was significantly enhanced as compared with a deposition rate (${\sim}55{\AA})$/min) of the conventional sputtering system. We also reported that the FTS system is a suitable method for the high speed and the low temperature deposition, the plasma free deposition, and the mass-production.

• 한국초전도ㆍ저온공학회논문지
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• 제17권3호
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• pp.9-12
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• 2015

NbN thin films were deposited on thermally oxidized Si substrate at room temperature by using reactive magnetron sputtering in an $Ar-N_2$ gas mixture. Total sputtering gas pressure was fixed while varying $N_2$ flow rate from 1.4 sccm to 2.9 sccm. X-ray diffraction pattern analysis revealed dominant NbN(200) orientation in the low $N_2$ flow rate but emerging of (111) orientation with diminishing (200) orientation at higher flow rate. The dependences of the superconducting properties on the $N_2$ gas flow rate were investigated. All the NbN thin films showed a small negative temperature coefficient of resistance with resistivity ratio between 300 K and 20 K in the range from 0.98 to 0.89 as the $N_2$ flow rate is increased. Transition temperature showed non-monotonic dependence on $N_2$ flow rate reaching as high as 11.12 K determined by the mid-point temperature of the transition with transition width of 0.3 K. On the other hand, the upper critical field showed roughly linear increase with $N_2$ flow rate up to 2.7 sccm. The highest upper critical field extrapolated to 0 K was 17.4 T with corresponding coherence length of 4.3 nm. Our results are discussed with the granular nature of NbN thin films.