• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2006년도 추계학술대회 발표 논문집
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• pp.138-144
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• 2006

Non-contact transportation of a large-sized glass plate using air cushion for the sputtering system of liquid crystal display panel was considered. The gas is injected through multiple small holes to maintain the force for levitating glass plate. Complex flow field and resulting pressure distribution on the glass surface was numerically studied to design the air injection pad. The exhaust hole size was varied to obtain evenly distributed pressure distribution at fixed diameter of the injection hole. Considering the force for levitating glass plate, the diameter of the exhaust hole of 30 to 40 times of the gas injection hole was recommended.

• 반도체디스플레이기술학회지
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• 제6권1호
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• pp.59-64
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• 2007

Non-contact transportation of a large-sized glass plate using air cushion for the vertical sputtering system of liquid crystal display (LCD) panel was considered. The objective of the study was to design an air pad unit which was composed of multiple injection and exhaust holes and mass flow supplying pipe. The gas was injected through multiple small holes to maintain the force for levitating glass plate. After hitting the plate, the air was vented through exhaust holes. Complex flow field and resulting pressure distribution on the glass surface were numerically studied to design the air injection pad. The exhaust hole size was varied to obtain evenly distributed pressure distribution at fixed diameter of the injection hole. Considering the force for levitating glass plate, the diameter of the exhaust hole of 30 to 40 times of the gas injection hole was recommended.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.131-135
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• 2003

Zinc Oxide(ZnO) thin films on Si (100) substrate were deposited by RF magnetron sputter with changing sputtering conditions such as argon/oxygen gas ratios, RF power, and substrate temperature, chamber pressure and target-substrate distance. To analyze a crystallographic properties of the films, $\theta/2\theta$ mode X-ray diffraction, SEM, and AFM analyses. C-axis preferred orientation, resistivity, and surface roughness highly depended on $Ar/O_2$ gas ratios. The resistivity of ZnO thin films rapidly increased with increasing oxygen ratio and the resistivity value of $9{\times}10^7{\Omega}cm$ was obtained at a working pressure of 10 mTorr with $Ar/O_2$=50/50. The surface roughness was also improved with increasing oxygen ratio and the ZnO films deposited with $Ar/O_2$=50/50 showed the excellent roughness value of $28.7{\AA}$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1430-1432
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• 2003

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure and deposition time on the electrical, optical and morphological properties were investigated experimentally. ZnO:Al films with the optimum growth conditions of working gas pressure and substrate temperature showed resistivity of $9.64{\times}10^{-4}\;{\Omega}$-cm and transmittance of 90.02% for a film 860nm thick in the wavelength range of the visible spectrum.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.612-614
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• 1993

Sputtering requires a way to bombard the target with sufficient momentum. Positive ions are the most convenient source since their energy and momentum can be controlled by applying a potential to the target. Although many types of discharges have been used for sputtering, magnetrons are now the most widely used because of the high ion current densities. Namely, plasma near the target electrode is confined by magnetic field using permanent magnet, so that the collision probability is increased. It is important to develop RF magnetron sputtering system which has many excellent merits compared with conventional methods. Our study aims to develop 1 kW RF source(13.56 MHz, TR type) and to accumulate the design and construction technology of RF magnetron sputter-deposition system. We developed 1 kW RF sputtering system to deposit thin film. These films are deposited by this RF source matched by auto-matching system using primarily argon gas. Target of Au, Ni, Al, and $SiO_2$ was well deposited on the argon pressure of 5-10 mTorr.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1230-1233
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• 2004

Ozone is useful oxidizing gas for the fabrication of oxide thin films. Accordingly researching on oxidizing gas is required. In order to obtain high quality oxide thin films, higher ozone concentration is necessary. In this paper oxidation property was evaluated relation between oxide gas pressure and inverse temperature(CuO reaction). The obtained condition was formulated by the fabrication of Cu metal thin film by co-deposition using the ion Beam Sputtering method. Because the CuO phase peak appeared at the XRD evaluation of the CuO thin film using ozone gas, this study has succeeded in the fabrication of the CuO phase at $825^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집
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• pp.110-113
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• 2005

Ozone is useful oxidizing gas for the fabrication of BSCCO thin films. In order to obtain high quality oxide BSCCO thin films, higher ozone concentration is necessary. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In this paper oxidation property was evaluated relation between oxide gas pressure and inverse temperature(CuO reaction). The obtained condition was formulated by the fabrication of Cu metal thin film by co-deposition using the Ion Beam Sputtering method. Because the CuO phase peak appeared at the XRD evaluation of the CuO thin film using ozone gas, this study has succeeded in the fabrication of the CuO phase at $825^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 제6회 학술대회 논문집 일렉트렛트 및 응용기술연구회
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• pp.35-38
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• 2004

Ozone is useful oxidizing gas for the fabrication of oxide thin films. Accordingly researching on oxidizing gas is required. In order to obtain high quality oxide thin films, higher ozone concentration is necessary. In this paper oxidation property was evaluated relation between oxide gas pressure and inverse temperature(CuO reaction). The obtained condition was formulated by the fabrication of Cu metal thin film by co-deposition using the Ion Beam Sputtering method. Because the CuO phase peak appeared at the XRD evaluation of the CuO thin film using ozone gas, this study has succeeded in the fabrication of the CuO phase at $825^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.587-588
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• 2005

Ozone is useful oxidizing gas for the fabrication of BSCCO thin films. In order to obtain high quality oxide BSCCO thin films, higher ozone concentration is necessary. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In this paper oxidation property was evaluated relation between oxide gas pressure and inverse temperature(CuO reaction). The obtained condition was formulated by the fabrication of Cu metal thin film by co-deposition using the Ion Beam Sputtering method. Because the CuO phase peak appeared at the XRD evaluation of the CuO thin film using ozone gas, this study has succeeded in the fabrication of the CuO phase at $825^{\circ}C$.

• 한국결정성장학회지
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• 제22권3호
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• pp.122-126
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• 2012

$Al_2O_3$ 2 wt%가 도핑 된 ZnO(AZO) 타겟으로RF 스퍼터링 장비를 사용하여 $H_2/(Ar+H_2)$ 가스 비율에 따른 AZO 박막을 증착 후, 이들 박막의 특성을 조사하였다. AZO 박막은 $200^{\circ}C$, $2{\times}10^{-2}$ 공정조건에서 $H_2/(Ar+H_2)$ 가스 비율을 변화시키면서 증착하였다. AZO박막증착 중 수소가스의 첨가는 박막의 특성에 영향을 미쳤다. $H_2/(Ar+H_2)$ 가스 비율이 2.5 %일 때 비 저항(${\sim}9.21{\times}10^{-4}\;{\Omega}cm$)과 전자 이동도(${\sim}17.8\;cm^2/Vs$)는 각각 최소값과 최대값을 나타내었다. $H_2/(Ar+H_2)$ 가스 비율이 2.5 % 이상일 때는 $H_2/(Ar+H_2)$ 가스 비율이 증가할수록 비저항은 점차로 증가하였고 전자 이동도는 점차적으로 감소하였다. 전자 운반자 농도는 $H_2/(Ar+H_2)$ 가스 비율이 증가함에 따라 0 %에서 7.5 %까지 점차로 증가하였다. $H_2/(Ar+H_2)$ 가스 비율에 따라 증착된 박막의 가시광선 파장 범위에서 평균 광 투과도는 90 % 이상이었고 성장방향은 [002]이었다.