• Journal of the Korean Vacuum Society
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• v.5 no.2
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• pp.139-146
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• 1996

Transparent and conducting Sb-doped $SnO_2$ thin films were prepared by rf magnetron sputtering technology. But it showed a serious damage phenomenon on the surface of as-deposited films. In order to avoid a damage caused in the substrate center and location facing to target erosion, a ring plate of masking glass was installed at 1.5 cm above target surface. The uniformity and electrical characteristic of $SnO_2$ thin films were evaluated by the control of optimal conditions in the magnetron sputtering operation such as rf power, sputtering gas pressure, and substrate temperature. In the experimental results using the operating conditions, the optimum temperature, which produced uniform and damageless films, shifted with the change of gas pressure. The rate was about $100^{\circ}C$/5 mTorr at rf power of 50 W Similarly, the optimum temperature in compensation for an increase of rf power shifted down to a proper rate.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.2
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• pp.51-61
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• 1999

$SrBi_2Ta_2O_9$ thin films were prepared on $Pt/SiO_2$/Si p-tyPp (100) substrate by r.f. magnetron sputtering method. The films were annealed at $800^{\circ}C$ and characterized in terms of micro-structures and electrical properties depending on film deposition conditions. XRD patterns of SBT films annealed at $800^{\circ}C$ indicated the typical SBT phase of (006), (111), and (200) with BiPt additional peaks. SEM images show that crystal gram become to grow with increasing the substrate temperature and decreasing the gas pressure. The remanant polarization(2Pr) and the coercive field(Ec) of 200nm thickness SBT film which was deposited at 10$0^{\circ}C$ under 50mtorr gas pressure and annealed at $800^{\circ}C$ were 20.07$\mu$C/$\textrm {cm}^2$ and 79kV/cm, respectively.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1518-1520
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• 2001

Bi-layer Mo films were deposited on sodalime glass substrates using DC magnetron sputtering. As the gas pressure and power density, the resistivity varied from $1.5{\times}10^{-5}$ to $4.97{\times}10^{-4}{\Omega}{\cdot}cm$. Furthermore, stress direction yielded compressive-to-tensile transition stress curves. The microstructure of the compressive stress films which had poor adhesion consists of tightly packed columns, but of the tensile-stressed films had less dense structure. Under all gas pressure conditions, Mo films exhibited distinctly increasing optical reflection with decreasing gas pressure. The expansion of (110) peak width with the gas pressure meant the worse crystalline growth. Also, The highest efficiency was 15.2% on 0.2 $cm^2$. The fill factor, open circuit voltage and short circuit current were 63 %, 570 mV and 42.6 mA/$cm^2$ respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.63-66
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• 2002

Bi-layer Mo films were deposited on sodalime glass substrates using DC magnetron sputtering. As the gas pressure and power density, the resistivity varied from $1.5{\times}10^{-5}$ to $4.97{\times}10^{-4}{\Omega}{\cdot}cm$. Furthermore, stress direction yielded compressive-to-tensile transition stress curves. The microstructure of the compressive stress films which had poor adhesion consists of tightly packed columns, but of the tensile-stressed films had less dense structure. Under all gas pressure conditions, Mo films exhibited distinctly increasing optical reflection with decreasing gas pressure. The expansion of (110) peak width with the gas pressure meant the worse crystalline growth. Also, The highest efficiency was 15.2% on 0.2 $cm^2$. The fill factor, open circuit voltage and short circuit current were 63 %, 570 m V and 42.6 $mA/cm^2$ respectively.

• Journal of the Semiconductor & Display Technology
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• v.6 no.4
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• pp.11-15
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• 2007

As preparing electrode for the OLED with the sputtering process, in order to be lower damage of the bottom organic layer and increase the life-time of the OLED, we prepared Al electrode for that by using Facing Targets Sputtering (FTS) system. Al electrode directly deposited on the cell (LiF/EML/HTL/Bottom electrode). Deposition condition was the working gas (Ar, Kr and Ar+Kr) and working gas pressure (1 and 6 mTorr). The film thickness and I-V curve of Al/cell were evaluated by a $\acute{a}$-step profiler and a semiconductor parameter (HP4156A) measurement. The thin film surface image was observed by a Atomic Force Microscope (AFM). In result, in comparison with about 11 [V] of the turn-on voltage of Al/cell with using the pure Ar gas, when Al thin film was deposited using the Ar-Kr mixture gas, the surface morphology was improved in some region and the turn-on voltage of Al/cell could be decreased to about 7 [V].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.125-125
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• 2009

In this paper, we have investigated about MgO thin films on Si(100) substrate by RF magnetron Sputtering. MgO thin films were affected by RF input power, gas pressure, gas composition, and substrate temperatures. So, we focused on most effective RF input power in deposition condition. Thickness of MgO thin films was measured by surface profiler. And structural analysis carried out by X-ray Diffraction(XRD). physical characteristic and thickness of thin films changed with RF input power.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.314-319
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• 1998

TiN thin films were deposited on SKD 61 steel substrates by reactive sputtering under various deposition conditions, and subsequently their growth characteristics and properties were studied. Deposition rate was proportionally increased with total gas pressure as well as RF input power, while the increase of nitrogen in the reaction gas induced a significant suppression of deposition rate. The resulted films exhibited hillocks on the surface. The TiN film prepared using a typical deposition condition showed a (111) preferred orientation and maintained the stoichiometry of pure TiN.

• Journal of the Korean Ceramic Society
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• v.32 no.8
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• pp.950-956
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• 1995

Y2O3 thin films were deposited by reactive sputtering of Y target in Ar and O2 gas mixture. Residual stress was measrued by sin2$\psi$ method of x-ray diffraction (XRD) and growth orientation was examined by measuring the relative intensity of (400) plane and (222) plane of Y2O3 films. In the case that Y2O3 films were deposited at 40$0^{\circ}C$ and at low working pressure below 0.05 torr the film had large compressive stress and (111) plane orientation. At working pressure of about 0.10 torr the film had small compressive stress and (100) orientation. Above working pressure of 0.20 torr, the films had nearly zero stress and random orientation. In the case that the (111) oriented film deposited at low working pressure below 0.05 torr, as substrate temperature decreased, (111) orientation increased. In the case the film, with (100) orientation, deposited at working pressure of about 0.10 torr, (100) orientation increased with decresing substrate temperature. These relationship of residual stress and growth orientation can be explained by the relationship of surface energy and strain energy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.634-637
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• 1999

The amorphous vanadium oxide as a cathode material is very preferable for fabricating high performance micro-battery. The amorphous vanadium oxide cathode is preferred over the crystalline form because three times more lithium ions can be inserted into the amorphous cathode, thus making a battery that has a higher capacity. The electrochemical properties of sputtered films are strongly dependent on the oxygen partial pressure in the sputtering gas. The effect of different oxygen partial pressure on the electrochemical properties of vanadium oxide thin films formed by r.f. reactive sputtering deposition were investigated. The stoichiometry of the as-deposited films were investigated by Auger electro spectroscopy. X-ray diffraction and atomic force microscopy measurements were carried out to investigate structural properties and surface morphology, respectively. For high oxygen partial pressure(>30% ), the films were polycrystalline V$_2$O$_{5}$ while an amorphous vanadium oxide was obtained at the lower oxygen partial pressure(< 15%). Half-cell tests were conducted to investigate the electrochemical properties of the vanadium oxide film cathode. The cell capacity was about 60 $\mu$ Ah/$\textrm{cm}^2$ m after 200 cycle when oxygen partial pressure was 20%. These results suggested that the capacity of the thin film battery based on vanadium oxide cathode was strongly depends on crystallinity.y.

• Journal of Powder Materials
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• v.9 no.6
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• pp.409-415
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• 2002

In this review the methods for production and processing of isolated or agglomerated nanoscale metal particles embedded in organic liquids (nanosuspensions) and polymer matrix composites are elucidated. Emphasis is laid on the techniques of inert gas condensation (IGC) and high pressure sputtering for obtaining highly porous metal powders ("nanopowder") as well as on vacuum evaporation on running liquids for obtaining nanosuspensions. Functional properties and post-processing are outlined in view of applications in the fields of electrically conductive adhesives and anti-microbially active materials for medical articles and consumer goods.mer goods.