• 대한화학회지
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• 제42권1호
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• pp.42-50
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• 1998

산화티탄을 전극 재료로 사용하기 위해서는 투명하고 수용액에 안정한 재료가 필요하다.아세틸 아세톤 티탄(IV)으로부터 분사방법을 이용하여 산화티탄의 안정한 박막을 얻었다. 결정 모양은 구형을 나타내었으며, 결정의 크기는 온도가 증가함에 따라 증가하였고 두께는 감소하는 경향을 나타내었다. XRD 데이타로부터 아나타제 결정이 400$^{\circ}C$ 에서부터 얻어지기 시작함을 관찰하였다. 440$^{\circ}C$ 에서 만들어진 산화티탄이 고유 광전류가 최대값을 나타냈으며 가시광 영역에서 광전류가 증가하는 결과를 나타냈다. 가시광 영역에서의 광전류는 프탈로시아닌의 흡수 스펙트럼과 같은 ${\lambda}$max 위치에서 얻어졌고 이와 같은 결과는 프탈로시아닌의 결정 특성에 따른 광전류 특성으로 나타났다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.35.1-35.1
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• 2011

New photovoltaic (PV) materials and manufacturing approaches are needed for meeting the demand for lower-cost solar cells. The prototypal thin-film photovoltaic absorbers (CdTe and $Cu(In,Ga)Se_2$) can achieve solar conversion efficiencies of up to 20% and are now commercially available, but the presence of toxic (Cd,Se) and expensive elemental components (In, Te) is a real issue as the demand for photovoltaics rapidly increases. To overcome these limitations, there has been substantial interest in developing viable alternative materials, such as $Cu_2ZnSnS_4$ (CZTS) is an emerging solar absorber that is structurally similar to CIGS, but contains only earth abundant, non-toxic elements and has a near optimal direct band gap energy of 1.4~1.6 ev and a large absorption coefficient of ${\sim}10^4\;cm^{-1}$. The CZTS absorber layers are grown and investigated by various fabrication methods, such as thermal evaporation, e-beam evaporation with a post sulfurization, sputtering, non-vacuum sol-gel, pulsed laser, spray-pyrolysis method and electrodeposition technique. In the present work, we report an alternative method for large area deposition of CZTS thin films that is potentially high throughput and inexpensive when used to produce monolithically integrated solar panel modules. Specifically, we have developed an aqueous chemical approach based on chemical bath deposition (CBD) with a subsequent sulfurization heat treatment. Samples produced by our method were analyzed by scanning electron microscopy, X-ray diffraction, transmission electron microscopy, absorbance and photoluminescence. The results show that this inexpensive and relatively benign process produces thin films of CZTS exhibiting uniform composition, kesterite crystal structure, and good optical properties. A preliminary solar cell device was fabricated to demonstrate rectifying and photovoltaic behavior.

• 한국미생물·생명공학회지
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• 제41권2호
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• pp.176-182
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• 2013

바이오매스 유래 항암물질 paclitaxel 정제를 위하여, 물리적 특성이 다른 메조기공 알루미나 흡착제를 제조하여 흡착제 처리 효과를 조사하였다. 알루미나의 물리적 특성 중 표면적과 기공부피 보다는 기공크기(기공지름)이 흡착제 처리효과에 많은 영향을 미쳤다. 특히 적절한 기공크기(기공지름: 10.8 nm)에서 식물유래 타르 및 왁스 성분을 포함한 불순물을 제거하는데 가장 효과적이었다. 일정한 기공크기에서 흡착제의 표면적은 paclitaxel 순도뿐만 아니라 수율에 많은 영향을 미치며 흡착제의 표면적이 증가할수록 paclitaxel과 불순물(바이오매스 유래 타르 및 왁스 성분 포함)의 흡착 정도는 증가하였다. 이러한 불순물 제거 효과는 흡착제 처리 후 흡착제를 메탄올로 세척하여 HPLC로 분석한 결과와 흡착제에 붙은 유기물의 TGA 정량 분석 결과로도 확인할 수 있었다.

• 한국세라믹학회지
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• 제45권3호
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• pp.167-171
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• 2008

Zirconium-doped $Li_{1.1}Co_{1-x}Zr_xO_2(0{\leq}x{\leq}0.05)$ powders as cathode materials for lithium ion batteries were synthesized using an ultrasonic spray pyrolysis method. Cyclic voltammetry and cyclic stability tests were performed, and the changes of microstructure were observed. The solubility limit of zirconium into $Li_{1.1}CoO_2$ was less than 5 mol%, and monoclinic $Li_2ZrO_3$ phase was formed above the limit. The Zr-doping suppressed the grain growth and increased the lattice parameters of the hexagonal $LiCoO_2$ phase. The Zr-dopiong of 1mol% resulted in the best cyclic performance in the range of $3.0{\sim}4.3V$ at 1C rate (140 mA/g); the initial discharge capacity decreased from 158 mAh/g to 60 mAh/g in the undoped powder, while from 154 mAh/g to 135 mAh/g in the Zr-doped powder of 1 mol% after 30 cycles. The excellent cycle stability of Zr-doped powder was due to the low polarization during chargedischarge processes which resulted from the delayed collapse of the crystal structure of the active materials with Zr-doping.

• 한국표면공학회지
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• 제29권6호
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• pp.862-868
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• 1996

Cadmium sulfide is commonly used as the window material for thin film solar cells, and can be prepared by several techniques such as sputtering, spray pyrolysis, close spaced sublimation (CSS), thermal evaporation, solution growth methods, etc. In this study, CdS films were deposited by thermal evaporation, close spaced sublimation, and solution growth methods, respectively, and the effects of the methods on physical properties of polycrystalline CdS deposited on ITO/glass were investigated. Also, the effects of variously prepared CdS thin films on the physical properties of CdTe deposited on the CdS were investigated. The thickness of polycrystalline CdS films was maintained at $0.3\mu\textrm{m}$ except for the solution grown CdS when $0.2\mu\textrm{m}$ thick CdS was deposited. After the deposition, all the samples were annealed at $400^{\circ}C$ or $500^{\circ}C$ in H2 atmosphere. To investigate physical properties of the deposited and annealed CdS thin films, UV-VIS spectro-photometry, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES), and cross sectional transmission electron microscopy(XTEM) were used to analyze grain size, crystal structure, preferred orientation, optical properties, etc. The annealed CdS showed the bandedge transition at 510nm and the optical transmittance high than 80% for all of the variously deposited films. XRD results showed that CdS thin films variously deposited and annealed had the same hexagonal structures, however, showed different preferred orientations. CSS grown CdS had [103] preferred orientation, thermally evaporated CdS had [002], and CdS grown by the solution growth had no preferred orientation. The largest grain size was obtained for the CSS grown CdS while the least grain size was obtained for the solution grown CdS. Some of the physical properties of CdTe deposited on the CdS thin film such as grain size at the junction and grain orientation were affected by the physical properties of CdS thin films.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.423-423
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• 2011

Zinc oxide is metal oxide semiconductor with the 3.37 eV bandgap energy. Zinc oxide is very attractive materials for many application fields. Zinc Oxide has many advantages such as high conductivity and good transmittance in visible region. Also it is cheaper than other semiconductor materials such as indium tin oxide (ITO). Therefore, ZnO is alternative material for ITO. ZnO is attracting attention for its application to transparent conductive oxide (TCO) films, surface acoustic wave (SAW), films bulk acoustic resonator (FBAR), piezoelectric materials, gas-sensing, solar cells and photocatalyst. In this study, we synthesized ZnO nanoparticles and defined their physical and chemical properties. Also we studied about the application of ZnO nanoparticles as a photocatalyst and try to find a enhancement photocatalytic activity of ZnO nanorticles.. We synthesized ZnO nanoparticles using spray-pyrolysis method and defined the physical and optical properties of ZnO nanoparticles in experiment I. When the ZnO are exposed to UV light, reduction and oxidation (REDOX) reaction will occur on the ZnO surface and generate O2- and OH radicals. These powerful oxidizing agents are proven to be effective in decomposition of the harmful organic materials and convert them into CO2 and H2O. Therefore, we investigated that the photocatalytic activity was increased through the surface modification of synthesized ZnO nanoparticles. In experiment II, we studied on the stability of ZnO nanoparticles in water. It is well known that ZnO is unstable in water in comparison with TiO2. Zn(OH)2 was formed at the ZnO surface and ZnO become inactive as a photocatalyst when ZnO is present in the solution. Therefore, we prepared synthesized ZnO nanoparticles that were immersed in the water and dried in the oven. After that, we measured photocatalytic activities of prepared samples and find the cause of their photocatalytic activity changes.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.382-382
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• 2012

CIGS thin films have received great attention as a promising material for solar cells due to their high absorption coefficient, appropriate bandgap, long-term stability, and low cost production. CIGS thin films are deposited by various methods such as co-evaporation, sputtering, spray pyrolysis and electro-deposition. The deposition technique is one of the most important processes in preparing CIGS thin film solar cells. Among these methods, co-evaporation is one of the best technique for obtaining high quality and stoichiometric CIGS films. However, co-evaporation method is known to be unsuitable for commercialization. The sputtering is known to be very effective and feasible process for mass production. In this study, CIGS thin films have prepared by rf magnetron sputtering using a $Cu(In_{1-x}Ga_x)Se_2$ single quaternary target without post deposition selenization. This process has been examined by the effects of deposition parameters on the structural and compositional properties of the films. In addition, we will explore the influences of substrate temperature and additional annealing treatment after deposition on the characteristics of CIGS thin films. The thickness of CIGS films will be measured by Tencor-P1 profiler. The crystalline properties and surface morphology of the films will be analyzed using X-ray diffraction and scanning electron microscopy, respectively. The optical properties of the films will be determined by UV-Visible spectroscopy. Electrical properties of the films will be measured using van der Pauw geometry and Hall effect measurement at room temperature using indium ohmic contacts.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.159-159
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• 2011

Among the semiconductor ternary compounds in the I-III-$VI_2$ series, $CulnS_2$ ($CulnSe_2$) are one of the promising materials for photovoltaic applications because of the suitability of their electrical and optical properties. The $CuInS_2$ thin film is one of I-III-$VI_2$ type semiconductors, which crystallizes in the chalcopyrite structure. Its direct band gap of 1.5 eV, high absorption coefficient and environmental viewpoint that $CuInS_2$ does not contain any toxic constituents make it suitable for terrestrial photovoltaic applications. A variety of techniques have been applied to deposit $CuInS_2$ thin films, such as single/double source evaporation, coevaporation, rf sputtering, chemical vapor deposition and chemical spray pyrolysis. This is the first report that $CuInS_2$ thin films have been prepared by Aerosol Jet Deposition (AJD) technique which is a novel and attractive method because thin films with high deposition rate can be grown at very low cost. In this study, $CuInS_2$ thin films have been prepared by Aerosol Jet Deposition (AJD) method which employs a nozzle expansion. The mixed fluid is expanded through the nozzle into the chamber evacuated in a lower pressure to deposit $CuInS_2$ films on Mo coated glass substrate. In this AJD system, the characteristics of $CuInS_2$ films are dependent on various deposition parameters, such as compositional ratio of precursor solution, flow rate of carrier gas, stagnation pressure, substrate temperature, nozzle shape, nozzle size and chamber pressure, etc. In this report, $CuInS_2$ thin films are deposited using the deposition parameters such as the compositional ratio of the precursor solution and the substrate temperature. The deposited $CuInS_2$ thin films will be analyzed in terms of deposition rate, crystal structure, and optical properties.

• 센서학회지
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• 제24권3호
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• pp.151-154
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• 2015

The gas sensing characteristic of $MoS_2-MoO_2$ composite yolk-shell spheres were investigated. $MoO_3$-carbon composite spheres were prepared by ultrasonic spray pyrolysis of aqueous droplets containing Mo-source and sucrose in nitrogen, which were converted into $MoO_3$ yolk-shell spheres by heat treatment at $400^{\circ}C$ in air. Subsequently, $MoS_2-MoO_2$ composite yolk-shell spheres were prepared by the partial sulfidation of $MoO_3$. The $MoS_2-MoO_2$ composite yolk-shell spheres showed relatively low and irreversible gas sensing characteristics at < $200^{\circ}C$. In contrast, the sensor showed high and reversible response (S=resistance ratio) to 5 ppm $NO_2$ (S=14.8) at $250^{\circ}C$ with low cross-responses (S=1.17-2.13) to other interference gases such as ethanol, CO, xylene, toluene, trimethylamine, $NH_3$, $H_2$, and HCHO. The $MoS_2-MoO_2$ composite yolk-shell spheres can be used as reliable sensors to detect $NO_2$ in a selective manner.

• 한국세라믹학회지
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• 제30권4호
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• pp.325-331
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• 1993

Aqueous solutions of metallic salts, ZrO(NO3)2.2H2O and Y(NO3)3.5H2O were used as raw materials to synthesize crystalline submicron spherical powders of Zr0.94Y0.06O1.97 with tetragonal crystal phase. Each aqueous solution was mixed on the magnetic stirrer to homogenize for 12 hours. The concentration of the mixed solutionwas changed from 0.01mol/$\ell$ to 0.1mol/$\ell$ calculated as the concentration of Zr0.94Y0.06O1.97. Ultrafine droplets of starting mixed solution were sprayed by the ultrasonic vibrator and carried into the furnace kept at 55$0^{\circ}C$, $650^{\circ}C$, 75$0^{\circ}C$ and 85$0^{\circ}C$ using carrier gas of air (10$\ell$/min) and pyrolysed to form Y-TZP fine powders. The results of this exeriment were as follows. 1) Synthesized powders were nonagglomerated and spherical type. 2) Particle size distribution was narrow between 0.1${\mu}{\textrm}{m}$ and 1${\mu}{\textrm}{m}$. 3) Forming reaction Y-TZP was finished above synthetic temperature 75$0^{\circ}C$. 4) As the synthetic temperature rised from 55$0^{\circ}C$ to 85$0^{\circ}C$, the mean particle size decreased from 0.35${\mu}{\textrm}{m}$ to 0.22${\mu}{\textrm}{m}$ in the concentration of starting solution with 0.02mol/$\ell$. 5) At 75$0^{\circ}C$ of synthetic temperature, the concentration changes of starting solution from 0.01mol/$\ell$ to 0.1mol/$\ell$ increased the mean particle size from 0.24${\mu}{\textrm}{m}$ to 0.38${\mu}{\textrm}{m}$. 6) Chemical compositions of each synthesized particle were homogeneous nearly.