• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.323-323
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• 2012

We present ferroelectricity of Bi-doped ZnO film probed by piezoresponse force microscopy (PFM), which is one of the Scanning Probe Microscopy techniques. Perovskite ferroelectrics are limited to integration of devices into semiconductor microcircuitry due to hard adjusting their lattice structure to the semiconductor materials. Transition metal doped ZnO film is one of the candidate materials for replacing the perovskite ferroelectrics. In this study, ferroelectric characteristics of the Bi-doped ZnO grown by pulsed laser deposition were probed by PFM. The polarization switching and patterning of the ZnO films were performed by applying DC bias voltage between the AFM tips and the films with varying voltages and polarity. The PFM contrast before and after patterning showed clearly polarization switching for a specific concentration of Bi atoms. In addition, the patterned regions with nanoscale show clearly the local piezoresponse hysteresis loop. The spontaneous polarization of the ZnO film is estimated from the local piezoresponse based on the comparison with LiNbO3 single crystals.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.23-26
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• 1998

The domain formation phenomena of {{{{ { LiLbO}_{ 3} }}}} crystals was investigated and the method for the periodic domain formation in {{{{ { LiLbO}_{ 3} }}}} single crystals during growth was proposed in this study. The strees-induced domain formation mechanism was proposed and explained. The strong piezoelectric effect of{{{{ { LiLbO}_{ 3} }}}} at elevated temperature would be the direct driving force for the inversion of the tensile component of the internal stresses can inverse the original direction of the spontaneous polarization.

• Journal of the Korean Ceramic Society
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• v.22 no.4
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• pp.15-20
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• 1985

$(Ba_{0.5} Pb_{0.5})_{1-x} Nd_x TiO_3$ 중의 $_x(Nd$의 양)를 변화시키면서 격자상수와 전기전도도를 측정하였다 c축과 a축의 비(c/a) 의 극대값은 실온에 있어서 전기전도도의 극대값과 일치하였다. 이것은 Nd원자의 치환위치와 강유 전성의 변화에 의한 것으로 고찰되었다 Curie 온도이하에서는 Nd 첨가량의 증가에 따라 전기전도도의 활성화에너지가 증가하는 경향을 나타내었다 이것은 입경의 감소에 따른 Spontaneous polarization의 저하가 원인으로 고찰되었다 첨가량의 역학을 입계의 potential barrier의 높이와 관련지어 논하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.868-871
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• 2006

In-plane switching characteristics of PI rubbed ITO sandwich cell with low molecule FLC (ferroelectric liquid crystal) surface was investigated. FLC on the surface is governed by the applying frequency and surface condition. By controlling the Ps (spontaneous polarization) direction of dual FLC surfaces, switching characteristics are improved without change of cell structure.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.504-508
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• 2003

New banana-shaped achiral compounds, 4-chloro-1,3-phenylene bis [4-4(3-fluoro-9-alkenyloxy) phenyl-iminomethylbenzoate]s and 4-chloro-1,3-phenylene bis [4-4-(3-fluoro-10-alkanyloxy) phenyliminomethyl benzoate]s were synthesized by varying the substituent (X=H, F, or Cl); their electrooptical properties are described. The smectic phases, including a switchable chiral smectic C ($SmC^{\ast}$) phase, were characterized by differential scanning calorimetry, polarizing optical microscopy, and triangular method. The presence of vinyl end group at the terminals of linear side wings in the banana-shaped molecules induced a decrease in melting temperature. The smectic phase having the undecenyloxy group such $as-(CH_2)_9CH=CH_2$ showed ferroelectric switching, and its value of spontaneous polarization on reversal of an applied electric field was 2250 $nC/cm^2$, while the value of spontaneous polarization of the smectic phase having the decanyloxy group such as $-(CH2)_9CH_3$ was 3700 $nC/cm^2$. We could obtain the ferroelectric phase with low isotropic temperature by varying the end group at the terminals of linear side wings in the banana-shaped achiral molecules.

• Bulletin of the Korean Chemical Society
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• v.25 no.8
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• pp.1171-1176
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• 2004

Three banana-shaped achiral compounds, 4-chloro-1,3-phenylene bis [4-{4-(undecenyloxy)phenyl imino-methyl} benzoate] derivatives, were synthesized with variation of a substituent (x=H, F, Cl); their antiferro-electric properties are described. The smectic mesophases, including a switchable chiral smectic C(Sm $C^{\ast}$) phase, were characterized by differential scanning calorimetry, polarizing optical microscopy, triangular wave method, and X-ray diffractometry. The presence of vinyl groups at the terminals of linear side wings in the banana-shaped achiral molecules induced a decrease in melting temperature and formation of the switchable Sm $C^{\ast}$ phase in the melt. The smectic phase having a lateral fluorine-substituent at 3-position of the Schiff's base moiety showed antiferroelctric switching, and the value of spontaneous polarization on reversal of an applied electric field was 250 nC/$cm^2$ .

• Korean Journal of Optics and Photonics
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• v.23 no.2
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• pp.71-76
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• 2012

A Sagnac-type Mach-Zehnder interferometer(SMZI) is a very stable instrument with respect to phase drift because all optical paths can share common optical components. We have observed very stable interference fringes in single photon interference experiments with an extremely attenuated laser beam, and with heralded single photons prepared from polarization correlated photon pairs in type-II spontaneous parametric down-conversion. The phase stability is measured to be about ${\pm}0.18$ rad for the SMZI, in contrast, conventional MZI showed the phase fluctuation of around ${\pm}1.02$ rad.

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.96-97
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• 2000

Incoherent broadband optical sources have been applied in various areas such as a light source for optical device characterization, fiber-optic gyroscopes$^{(1)}$ , and spectrum sliced light source in wavelength division multiplexing (WDM) system$^{(2)}$ . To utilize the inherent low loss in silica optical fibers, various types of incoherent light sources are being developed. Among the light sources, the amplified spontaneous emission (ASE) from a rare earth doped fiber has benefits in temperature stability, high output power, low polarization dependence over semiconductor diodes$^{(3)}$ . Recently erbium doped fibers (EDF) have been intensively researched for ASE sources as well as optical amplifiers$^{(4)}$ . The spectrum of ASE from an EDF, however, is limited in the 1520~1560 nm range in conventional configurations. In this letter we described a new broadband ASE source which included both the conventional ASE band of Er$^{3+}$ ion, 1520nm~1560nm and ASE band from Tm$^{3+}$ ions that extends the bandwidth further. For the first time, to the best knowledge of authors, a fiber ASE source based on the energy transfer between Er$^{3+}$ and Tm$^{3+}$ ions in the range of 1460~1550 nm, has been demonstrated using a single 980nm pump laser diode. (omitted)omitted)

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1843-1845
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• 1999

We have investigated the dielectric characteristics of palmitic acid(PA), stearic acid (SA) and arachidic acid(AA) Langmuir-Blodgett(LB) films because these fatty acid systems have a same hydrophilic group and a different hydrophobic one (alkyl chain length). In this work. fatty acid systems were used as LB films and the status of the deposited films was confirmed by evaluating the transfer ratio. the UV absorption and the capacitance. Also, the dielectric characteristics such as the frequency-capacitance characteristics and the dielectric dispersion and absorption characteristics of PA, SA and AA through-plane were measured. The relative dielectric constants of PA, SA and AA LB films were about $2.6\sim4.6$, $2.4\sim4.1$ and $2.2\sim3.8$, respectively. That is, the relative dielectric constants were decreased in proportion to the chain length of methylene group. And, the dielectric dispersion and absorption of each fatty acid LB films have arisen from spontaneous polarization of dipole polarization in the range of $10^4\sim10^5[Hz]$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.2
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• pp.138-145
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• 1998

The $(Pb_{0.9}Ca_{0.1})TiO_3$[PCT] thin films have been deposited by sol-gel processing on Si-wafer and ITO glass substrates. The creak-free films have been obtained by rapid thermal annealing at $700^{\circ}C$ for 10 minute and characterized by XRD, SEM and electrical measurements. Their tetragonality c/a was 1.041 and grain size was $0.15{\sim}0.2{\mu}m$. When the electrode system of sample was Au/PCT/ITO(MFM) and film thickness was $0.8{\mu}m$, dielectric constant, dielectric loss and Curie temperature were about 149, 0.085 and $449^{\circ}C$ at 10kHz, respectively. Spontaneous polarization $P_s$, remnant polarization $P_r$ and coercive field $E_c$ were about $5.29{\mu}C/cm^2$, $4.15{\mu}C/cm^2$ and 82kV/cm calculated by hysteresis loop.